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Electronic Devices and Semiconductor Manufacturing Commons™
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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Synchrophasor-Based Fault Location Detection And Classification, In Power Systems, Using Artificial Intelligence, Hemal Falak
Synchrophasor-Based Fault Location Detection And Classification, In Power Systems, Using Artificial Intelligence, Hemal Falak
Graduate Theses and Dissertations
With the introduction of sophisticated electronic gadgets which cannot sustain interruption in the provision of electricity, the need to supply uninterrupted and reliable power supply, to the consumers, has become a crucial factor in the present-day world. Therefore, it is customary to correctly identify fault locations in an electrical power network, in order to rectify faults and restore power supply in the minimum possible time. Many automated fault location detection algorithms have been proposed, however, prior art requires topological and physical information of the electrical power network. This thesis presents a new method of detecting fault locations, in transmission as …
X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal
X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry
Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry
Krishna C. Mandal
No abstract provided.
X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal
X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal
Krishna C. Mandal
No abstract provided.