Electrical and Electronics Commons^™

An Investigation Of Electrical And Physical Properties Of Reactively, Diode Sputtered Silicon Nitride Thin Films, Divyang Manharlal Shah

Theses

Silicon nitride thin films were deposited by r.f. reactive sputtering of silicon in nitrogen and argon discharge. Biased and unbiased modes of diode mode sputtering were used. Typical parameters for a sputter deposition run were: base pressure, 1-2x10-6 torr; sputtering pressure, 5-7 mtorr; nitrogen partial pressure, 15-16%; cathode-anode gap, 4 inch; r.f. power, 200-250 watts; cathode voltage, 1.8-2.1 V r.f.; water vapor pressure, 20-30% of the base pressure. The film thickness and the refractive index were measured by ellipsometery. The films of thickness 300-2500A, refractive index 1.9-2.1 and resistivity 10101Ω — cm were obtained. The deposition rate was in the …

Sputtered Mercury Cadmium Telluride Heterojunction Devices : Electrical Characteristics And Fabrication Process, Ashish N. Mistry

Theses

The main objective of this thesis was to grow high quality epitaxial films of the compound semiconductor Mercury-Cadmium-Telluride (MCT) on Silicon and MCT substrates,using sputtering technology. The research was aimed at investigating the heterojunction behaviour at such interfaces. Detailed studies about the heterojunction theory were made. Devices were made using MCT substrates prepared at the Santa Barbara Research Center (S.B.R. C.),California.

Experiments were designed to grow MCT films with high electron mobility and low carrier concentration in as-grown MCT films and some results were obtained close to reported data for high grade bulk material. Since the parameters involved in sputter …

Design And Construction Of An Atomic Nitrogen Source For Ion Cluster Beam Deposition Of Thin Film Nitrides, Sahar Elgharib

Theses

The objective of this thesis research was to generate atomic nitrogen to react with Ga being deposited by an Ion Cluster Beam method to prepare GaN thin films. An experimental reactor was designed and constructed to generate atomic nitrogen by making use of a microwave induced discharge to dissociate molecular nitrogen into atomic nitrogen. The concentration and the flow rate of the atomic nitrogen arriving at the substrate were measured by titration with nitrous oxide. The experiments were done with 0.32 square cm quartz tubing at room temperature over the nitrogen pressure range from 0.14 torr to 0.56 torr. Results …

Further Development Of Preparation And Measurement Techniques For Triode-Sputtered Mercury Cadmium Telluride Thin Films, Tai-On Chan

Theses

The modified MRC 8800 R.F. triode sputtering system was used for mercury vapor sputtering (Hg^1-xCd^x)Te targets onto N-type (111) silicon substrates with a resistivity of 70 to 90 ohm-cm. Deposition rates were in the 2.6 to 3.6 A/sec range, A Hall mobility value, at 87°K, of 2550 Cm²/V•sec with a carrier concentration of 7(10¹⁵) cm^-3 was obtained for 9 μm thick films with an X-value of 0.25. Obtaining good sputtered films reliably was dependent on having targets that would not crack when bombarded with mercury ions. Improvements in the methods used …

Optimization Of The Sputtering Technology For Preparation Of Hg1-[Subscript X] Cd[Subscript X] Te Heterojunction Diodes, Kyriacos Kokkinos

Theses

The deposition of (Hg_1-xCd_x)Te onto Si and (Hg_1-yCd_y)Te (x>y) substrates by rf triode sputtering was studied. Ionized mercury vapor, in the 0.6 to 1.2 micron pressure range, was used to bombard pressed-powder targets, consisting of HgTe and CdTe particles, with effective target x value of 0.3, 0.35, and 0.4. The sputtering procedure, parameters, and system were modified to optimize film characteristics. Higher substrate temperature (270°C) was required to obtain metallic gray films with x>0.3. With substrate temperatures less than 270°C and deposition rates 0.5-1.0 micron per hour the films were …