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Articles 1 - 23 of 23
Full-Text Articles in Electrical and Electronics
Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu
Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu
Master's Theses
The processors and digital circuits designed today contain billions of transistors on a small piece of silicon. As devices are becoming smaller, slimmer, faster, and more efficient, the transistors also have to keep up with the demands and needs of the daily user. Unfortunately, the CMOS technology has reached its limit and cannot be used to scale down due to the transistor's breakdown caused by short channel effects. An alternative solution to this is the FinFET transistor technology, where the gate of the transistor is a three dimensional fin that surrounds the transistor and prevents the breakdown caused by scaling …
Epitaxial Growth Of Iii-Nitride Nanostructures And Their Optoelectronic Applications, Moab Rajan Philip
Epitaxial Growth Of Iii-Nitride Nanostructures And Their Optoelectronic Applications, Moab Rajan Philip
Dissertations
Light-emitting diodes (LEDs) using III-nitride nanowire heterostructures have been intensively studied as promising candidates for future phosphor-free solid-state lighting and full-color displays. Compared to conventional GaN-based planar LEDs, III-nitride nanowire LEDs exhibit numerous advantages including greatly reduced dislocation densities, polarization fields, and quantum-confined Stark effect due to the effective lateral stress relaxation, promising high efficiency full-color LEDs. Beside these advantages, however, several factors have been identified as the limiting factors for further enhancing the nanowire LED quantum efficiency and light output power. Some of the most probable causes have been identified as due to the lack of carrier confinement in …
Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras
Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras
Legacy Theses & Dissertations (2009 - 2024)
One and two dimensional materials are being extensively researched toward potential application as ultra-thin body channel materials. The difficulty of implementing physical doping methods in these materials has necessitated various alternative doping schemes, the most promising of which is the electrostatic gating technique due to its reconfigurability. This dissertation explores the different fundamental devices that can be fabricated and characterized by taking advantage of the electrostatic gating of individual single-walled carbon nanotubes (SWNTs), dense SWNT networks and exfoliated 2D tungsten diselenide (WSe2) flakes.
Molecular Dynamics Study On Defect Reduction Strategies Towards The Fabrication Of High Performance Cd1-Xznxte/Cds Solar Cells, Jose Juan Chavez
Molecular Dynamics Study On Defect Reduction Strategies Towards The Fabrication Of High Performance Cd1-Xznxte/Cds Solar Cells, Jose Juan Chavez
Open Access Theses & Dissertations
Cadmium Telluride is a material widely used in terrestrial thin film photovoltaic applications due to its nearly ideal band gap (~1.5 eV) and high absorption coefficient. Due to its low manufacturing cost, this technology has the potential to become a significant energy resource if higher energy conversion efficiencies are achieved. However, the module efficiencies (~14%) are still far from the theoretical maximum (~30%) for this material in a single junction configuration. The reason behind this low performance is attributed to the high number of defects that are present within the device materials. The physics behind the formation mechanisms of these …
Oxide Defect Engineering Methods For Valence Change (Vcm) Resistive Random Access Memories, Jihan Ocampo Capulong
Oxide Defect Engineering Methods For Valence Change (Vcm) Resistive Random Access Memories, Jihan Ocampo Capulong
Legacy Theses & Dissertations (2009 - 2024)
Electrical switching requirements for resistive random access memory (ReRAM) devices are multifaceted, based on device application. Thus, it is important to obtain an understanding of these switching properties and how they relate to the oxygen vacancy concentration and oxygen vacancy defects. Oxygen vacancy defects in the switching oxide of valence-change-based ReRAM (VCM ReRAM) play a significant role in device switching properties. Oxygen vacancies facilitate resistive switching as they form the conductive filament that changes the resistance state of the device. This dissertation will present two methods of modulating the defect concentration in VCM ReRAM composed of Pt/HfOx/Ti stack: …
Crystal Growth, Characterization And Fabrication Of Cdznte-Based Nuclear Detectors, Ramesh Madhu Krishna
Crystal Growth, Characterization And Fabrication Of Cdznte-Based Nuclear Detectors, Ramesh Madhu Krishna
Theses and Dissertations
In today's world, nuclear radiation is seeing more and more use by humanity as time goes on. Nuclear power plants are being built to supply humanity's energy needs, nuclear medical imaging is becoming more popular for diagnosing cancer and other diseases, and control of weapons-grade nuclear materials is becoming more and more important for national security. All of these needs require high-performance nuclear radiation detectors which can accurately measure the type and amount of radiation being used. However, most current radiation detection materials available commercially require extensive cooling, or simply do not function adequately for high-energy gamma-ray emitting nuclear materials …
Ultrafast Laser Material Processing For Photonic Applications, Mark Ramme
Ultrafast Laser Material Processing For Photonic Applications, Mark Ramme
Electronic Theses and Dissertations
Femtosecond Laser Direct Writing (FLDW) is a viable technique for producing photonic devices in bulk materials. This novel manufacturing technique is versatile due to its full 3D fabrication capability. Typically, the only requirement for this process is that the base material must be transparent to the laser wavelength. The modification process itself is based on non-linear energy absorption of laser light within the focal volume of the incident beam. This thesis addresses the feasibility of this technique for introducing photonic structures into novel dielectric materials. Additionally, this work provides a deeper understanding of the lightmatter interaction mechanism occurring at high …
Modeling Leakage Currents In Metal Insulator Metal Structures With High K Materials, Priyamvada Maleeswaran
Modeling Leakage Currents In Metal Insulator Metal Structures With High K Materials, Priyamvada Maleeswaran
Electrical & Computer Engineering Theses & Dissertations
Various products such as personal computers, cellular phones and mobile devices require high speed and low power consumption. Such improvements have been attained by minimizing physical dimensions of electronic devices, leading to high density integration of transistors and capacitors on integrated chips (]Cs). However, as a consequence of down-scaling device dimensions, tunneling of electrons through thin gate oxides (SiO2) increases, leading to increased static power leakage. This constitutes wastage in power, and for the case of memory applications necessitates faster refresh cycles. In order to overcome such issues, high-k materials (such as HfO2 and ZrO2) …
Effect Of Mechanical Vibrations On Light Emitting Diode Luminaires, Jayalakshmi Paladugu
Effect Of Mechanical Vibrations On Light Emitting Diode Luminaires, Jayalakshmi Paladugu
UNLV Theses, Dissertations, Professional Papers, and Capstones
In this work, a LED and two types of Compact fluorescent lamps were investigated for the intensity variation due to mechanical vibrations in the range of 0 to 30 HZ. In general, subjecting the lamps to 24-hour vibration affects the total intensity percentage variations of peak intensities after vibrations is in the range of -25 to +15% compared to those of no vibrations for the light emitting diode luminaires. For the case of compact fluorescent lamps (Nuvue) the variations are in range from +10 to +35%, whereas for the Compact fluorescent lamps (Ecosmart) the intensity peaks range from -10 to …
Study Of Design Tradeoffs Of Dram And Sram Memories, Using Hspice Computer Simulation, Bageshri Kale
Study Of Design Tradeoffs Of Dram And Sram Memories, Using Hspice Computer Simulation, Bageshri Kale
Theses
Semiconductor random access memories are complex systems that can be described by performance parameters such as memory cycle time, access delays, storage capacity, bit packing density, chip area and retention time. In this thesis, tradeoffs between cycle time, chip area, and storage size as reflected by bit line capacitance (Cbl) were studied as a function of particular design variables: memory cell capacitance (Cc); CMOS flip-flop sense amplifier (SA) transistor sizes; and size of precharge (PC), and word line (WL) switches. Performance was optimized using circuit simulation software, HSPICE, to observe DRAM and SRAM waveforms. With TSMC 0.18 micron technology, minimum …
Investigation Of Nanoporous Thin-Film Alumina Templates, Biswajit Das
Investigation Of Nanoporous Thin-Film Alumina Templates, Biswajit Das
Electrical & Computer Engineering Faculty Research
This paper presents the results of a systematic study of the fabrication of thin-film alumina templates on silicon and other substrates. Such templates are of significant interest for the low-cost implementation of semiconductor and metal nanostructure arrays. In addition, thin-film alumina templates on silicon have the potential for nanostructure integration with silicon electronics. Formation of thin-film alumina templates on silicon substrates was investigated under different fabrication conditions, and the dependence of pore morphology and pore formation rate on process parameters was evaluated. In addition, process conditions for improved pore size distribution and periodicity were determined. The template/silicon interface, important for …
Characterization And Mapping Of Crystal Defects In Silicon Carbide, Ejiro Emorhokpor
Characterization And Mapping Of Crystal Defects In Silicon Carbide, Ejiro Emorhokpor
Theses
Silicon carbide (SiC) is a semiconductor with attractive properties, such as a wide bandgap (3. 26 eV), high dielectric strength, and high thermal conductivity that make it suitable for high power, highspeed electronic devices. A major roadblock to its wider application is the presence of defects, particularly micropipes and dislocations, in SiC wafers produced today and decreasing density of these defects is the most important challenge of the industry. The goal of this thesis was to design, build and test a system for detection and analysis of the defects in SiC wafers. The system is based on the reflection optical …
Low Frequency Noise In Gan Metal Semiconductor And Metal Oxide Semiconductor Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang
Low Frequency Noise In Gan Metal Semiconductor And Metal Oxide Semiconductor Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang
Faculty Publications
The low frequency noise in GaNfield effect transistors has been studied as function of drain and gate biases. The noise dependence on the gate bias points out to the bulk origin of the low frequency noise. The Hooge parameter is found to be around 2×10−3 to 3×10−3.Temperature dependence of the noise reveals a weak contribution of generation–recombination noise at elevated temperatures.
Evaluation Of The Transport Properties Of Gasb For Bipolar Applications Through Monte Carlo Simulations, Damayanthi Palaniappan
Evaluation Of The Transport Properties Of Gasb For Bipolar Applications Through Monte Carlo Simulations, Damayanthi Palaniappan
Electrical & Computer Engineering Theses & Dissertations
GaAs is currently the semiconductor material of choice for high speed, low power applications. Its electronic transport properties are superior to almost all other semiconductors. It is also used in a variety of bipolar applications such as photodetectors and photo-mixers. However, as is well known, the hole mobility and related transport parameters of GaAs are not very good. This is a serious drawback, and poses a potential problem for all applications involving bipolar conductivity. In order to increase the high :frequency limits and high-speed capability of bipolar devices, the choice of an alternative material, therefore, becomes necessary. An important first …
Fdtd-Based Full Wave Co-Simulation Model For Hybrid Electromagnetic Systems, Tong Li
Fdtd-Based Full Wave Co-Simulation Model For Hybrid Electromagnetic Systems, Tong Li
Dissertations
In high-frequency ranges, the present electronic design automation software has limited capabilities to model electromagnetic (EM) systems where there are strong field effects influencing their characteristics. In this situation, a full-wave simulation tool is desired for the analysis and design of high-speed and non-linear EM systems. It is necessary to explore the interaction between the field and electronic components during a transient process when field effects are more significant. The finite-difference time-domain (FDTD) technique receives growing attention in the area of EM system analysis and simulation due to its simplicity, flexibility and robustness. It is a full-wave simulation method that …
Investigation Of Optical Properties Of Inp, Ain And Sapphire For Applications In Non-Contact Semiconductor Process Monitoring, Rajasekhar Velagapudi
Investigation Of Optical Properties Of Inp, Ain And Sapphire For Applications In Non-Contact Semiconductor Process Monitoring, Rajasekhar Velagapudi
Theses
The objective of this thesis was to develop a reliable multi-wavelength pyrometer for simultaneous measurement of the wafer temperature and its optical properties in the wavelength range of 1 to 20 microns and temperature range of 30 to 1500° C. The spectral emissometer has been utilized for measurement of the temperature dependent optical properties of InP, AlN and Sapphire. The experimental results presented in this thesis showed that the measurement of high temperature optical properties could be performed reliably with a novel approach using the spectral ernissometer. The temperature determination capability of the emissometer was tested and verified using a …
Electric Field Mapping System With Nanosecond Temporal Rosolution, F. E. Peterkin, R. Block, K. H. Schoenbach
Electric Field Mapping System With Nanosecond Temporal Rosolution, F. E. Peterkin, R. Block, K. H. Schoenbach
Bioelectrics Publications
The electric field dependence of the absorption coefficient in semi‐insulating GaAs at the absorption edge was measured in a high‐voltage pulsed experiment. Pulse duration was kept below 50 ns in order to avoid thermal effects. A GaAs laser diode was used as a probe light source with wavelength varied from 902 to 911 nm. For fields up to 40 kV/cm the absorption coefficient increased from 3 to 17 cm−1 at 902 nm, with smaller absolute increases evident at the longer wavelengths. Calculation from theory was consistent with this behavior. The spatial variation of the electric field was also recorded …
Supralinear Photoconductivity Of Copper Doped Semi-Insulating Gallium Arsenide, K. H. Schoenbach, R. P. Joshi, F. Peterkin, R. L. Druce
Supralinear Photoconductivity Of Copper Doped Semi-Insulating Gallium Arsenide, K. H. Schoenbach, R. P. Joshi, F. Peterkin, R. L. Druce
Bioelectrics Publications
We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. A threshold intensity level has been observed and can be related to the occupancy of the deep copper level. Numerical simulations have also been carried out to analyze the trapping dynamics. The intensity dependent lifetimes obtained from the simulations match the experimental data very well. Finally, based on the nonlinear intensity dependence of the effective lifetimes, a possible low‐energy phototransistor application for …
Impact Of Field-Dependent Electronic Trapping Across Coulomb Repulsive Potentials On Low Frequency Charge Oscillations, R. P. Joshi, K. H. Schoenbach, P. K. Raha
Impact Of Field-Dependent Electronic Trapping Across Coulomb Repulsive Potentials On Low Frequency Charge Oscillations, R. P. Joshi, K. H. Schoenbach, P. K. Raha
Bioelectrics Publications
We have performed Monte Carlo simulations to obtain the field dependence of electronic trapping across repulsive potentials in GaAs. Such repulsive centers are associated with deep level impurities having multiply charged states. Our results reveal a field‐dependent maxima in the electronic capture coefficient, and the overall shape is seen to depend on the background electron density due to the effects of screening. Based on the Monte Carlo calculations, we have examined the stability of compensated semiconductors containing such repulsive centers. Our analysis indicates a potential for low frequency charge oscillations which is in keeping with available experimental data.
Temporal Development Of Electric Field Structures In Photoconductive Gaas Switches, K. H. Schoenbach, J. S. Kenney, F.E. Peterkin, R. J. Allen
Temporal Development Of Electric Field Structures In Photoconductive Gaas Switches, K. H. Schoenbach, J. S. Kenney, F.E. Peterkin, R. J. Allen
Bioelectrics Publications
The temporal development of the electric field distribution in semi‐insulating GaAs photoconductive switches operated in the linear and lock‐on mode has been studied. The field structure was obtained by recording a change in the absorption pattern of the switch due to the Franz–Keldysh effect at a wavelength near the band edge of GaAs. In the linear mode, a high field layer develops at the cathode contact after laser activation. With increasing applied voltage, domainlike structures become visible in the anode region and the switch transits into the lock‐on state, a permanent filamentary electrical discharge. Calibration measurements show the field intensity …
Bistable Behavior Of The Dark Current In Copper-Doped Semi-Insulating Gallium Arsenide, R. A. Roush, K. H. Schoenbach, R. P. Brinkmann
Bistable Behavior Of The Dark Current In Copper-Doped Semi-Insulating Gallium Arsenide, R. A. Roush, K. H. Schoenbach, R. P. Brinkmann
Bioelectrics Publications
The dark current characteristics of gallium arsenide doped with silicon and compensated with diffused copper were found to have a pronounced region of current controlled negative differential conductivity (ndc) similar to the characteristics of a thyristor. The resistivity of the semi‐insulating semiconductor was measured to be 105 Ω cm for applied voltages up to 2.2 kV, which corresponds to an average electric field of 38 kV/cm. At higher voltages, a transition to a stable high current state was observed with a current rate of rise exceeding 1011 A/s. There is evidence of the formation of at least one …
Conditional Artificial Dielectric Waveguide, Hsien-Wen Ho
Conditional Artificial Dielectric Waveguide, Hsien-Wen Ho
Theses
A thin layer of semiconductor ( the guest material ) is sandwiched between two polymeric films ( the host material ) to form an artificial dielectric waveguide. An artificial dielectric is a composite material consisting of a dielectric with a large number of conducting particles arranged in a three-dimensional pattern. The particle dimensions are smaller than the optical wavelength of interest. A beam of light with a photon energy above the band-gap of the semiconductor ( pump light ) induces electric and magnetic dipoles which affect the propagation of light with a photon energy below the band-gap ( probe light …
Measurements Of Basic Semiconductor Properties, Abdolreza Ariantaj
Measurements Of Basic Semiconductor Properties, Abdolreza Ariantaj
Theses
Mobility, resistivity, and total impurity concentration of several purchased p-type silicon samples with known resistivities were measured by Hall effect, experiments utilizing the Van Der Pauw method. The silicon samples will serve as Hall effect standards for future measurements on other semiconductor materials, particularly gallium nitride ion cluster beam (ICB) deposited thin films. The samples which were Freshly etched with hydrofluoric acid had measurement values of 455 cm ² / V.sec, 45.9 Ω cm, and 2.6 X 1014 cm³ for mobility, resistivity, and total impurity concentration, respectively. The mobility values were within 9.9 per cent, of the published values …