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Articles 31 - 42 of 42
Full-Text Articles in Electrical and Electronics
Development Of Novel Technologies To Enhance Performance And Reliability Of Iii-Nitride Avalanche Photodiodes, Puneet Harischandra Suvarna
Development Of Novel Technologies To Enhance Performance And Reliability Of Iii-Nitride Avalanche Photodiodes, Puneet Harischandra Suvarna
Legacy Theses & Dissertations (2009 - 2024)
Solar-blind ultraviolet avalanche photodiodes are an enabling technology for applications in the fields of astronomy, communication, missile warning systems, biological agent detection and particle physics research. Avalanche photodiodes (APDs) are capable of detecting low-intensity light with high quantum efficiency and signal-to-noise ratio without the need for external amplification. The properties of III-N materials (GaN and AlGaN) are promising for UV photodetectors that are highly efficient, radiation-hard and capable of visible-blind or solar-blind operation without the need for external filters. However, the realization of reliable and high performance III-N APDs and imaging arrays has several technological challenges. The high price and …
Oxide Defect Engineering Methods For Valence Change (Vcm) Resistive Random Access Memories, Jihan Ocampo Capulong
Oxide Defect Engineering Methods For Valence Change (Vcm) Resistive Random Access Memories, Jihan Ocampo Capulong
Legacy Theses & Dissertations (2009 - 2024)
Electrical switching requirements for resistive random access memory (ReRAM) devices are multifaceted, based on device application. Thus, it is important to obtain an understanding of these switching properties and how they relate to the oxygen vacancy concentration and oxygen vacancy defects. Oxygen vacancy defects in the switching oxide of valence-change-based ReRAM (VCM ReRAM) play a significant role in device switching properties. Oxygen vacancies facilitate resistive switching as they form the conductive filament that changes the resistance state of the device. This dissertation will present two methods of modulating the defect concentration in VCM ReRAM composed of Pt/HfOx/Ti stack: …
Development Of A One-Dimensional Position Sensitive Detector For Tracking Applications, Leigh Kent Lydecker
Development Of A One-Dimensional Position Sensitive Detector For Tracking Applications, Leigh Kent Lydecker
Legacy Theses & Dissertations (2009 - 2024)
Optical Position Sensitive Detectors (PSDs) are a non-contact method of tracking the location of a light spot. Silicon-based versions of such sensors are fabricated with standard CMOS processing, are inexpensive and provide a real-time, analog signal output corresponding to the position of the light spot. Because they are non-contact, they do not degrade over time from surface friction due to repetitive sliding motion associated with standard full contact sliding potentiometers. This results in long, reliable device lifetimes. In this work, an innovative PSD was developed to replace the linear hard contact potentiometer currently being used in a human-computer interface architecture.
Properties Of Peg, Ppg And Their Copolymers Influence On The Gap-Fill Characteristics Of Damascene Interconnects, Kevin Ryan
Legacy Theses & Dissertations (2009 - 2024)
A laboratory scale plating cell was built that provided reproducible bottom-up fill results for the electrochemical deposition of copper in damascene features. Several techniques used in the full wafer plating tool were incorporated into the setup to accurately control the process conditions. These techniques included but were not limited to a voltage controlled `hot-entry' step, a custom coupon holder to allow sample rotation, a secondary thief electrode and an automatic entry system. The results of qualification experiments are presented to demonstrate that precise control was realized along with repeatable partial fill plating results. The qualified setup was then used to …
Development Of Iii-V P-Mosfets With High-Kappa Gate Stack For Future Cmos Applications, Padmaja Nagaiah
Development Of Iii-V P-Mosfets With High-Kappa Gate Stack For Future Cmos Applications, Padmaja Nagaiah
Legacy Theses & Dissertations (2009 - 2024)
As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport …
Graphene-Based Post-Cmos Architecture, Sansiri Tanachutiwat
Graphene-Based Post-Cmos Architecture, Sansiri Tanachutiwat
Legacy Theses & Dissertations (2009 - 2024)
The semiconductor industry relies on CMOS technology which is nearing its scaling limitations. In order to continue the historical growth rate of the device density of digital logic chips, novel nanomaterials and nanodevices will need to be developed.
Synthesis, Processing And Characterization Of Silicon-Based Templated Nanowires, Jae Ho Lee
Synthesis, Processing And Characterization Of Silicon-Based Templated Nanowires, Jae Ho Lee
Legacy Theses & Dissertations (2009 - 2024)
Semiconductor and metallic nanowires have attracted substantial attention due to their wide variety of applications, ranging from nanoelectronics to energy storage devices. In particular, self-assembled silicon nanowires (SiNWs) may be an attractive alternative to conventionally processed planar silicon since SiNWs can potentially function as both the switch (i.e. transistor) and local interconnect (e.g. metal silicide nanowire) to form an inherently integrated nanoelectronic system. Also, hierarchical (branched) nanowire systems hold potential for catalysts or porous electrode applications for energy applications
Energy Band Engineering Using Polarization Induced Interface Charges In Mocvd Grown Iii-Nitride Heterojunction Devices, Neeraj Tripathi
Energy Band Engineering Using Polarization Induced Interface Charges In Mocvd Grown Iii-Nitride Heterojunction Devices, Neeraj Tripathi
Legacy Theses & Dissertations (2009 - 2024)
Characteristics of III-nitride based heterojunction devices are greatly influenced by the presence of high density of polarization induced interface charges. Research undertaken in the current doctoral thesis demonstrates the effect of presence of one, three and six sheets of polarization induced charges in three different III-nitride based devices, namely in a photocathode, a high electron mobility transistor (HEMT) and a hyperspectral detector structure. Through a systematic set of experiments and theoretical modeling an in-depth study of the interaction between multiple sheets of polarization induced charges and their impact on energy band profile was undertaken. Various device designs were studied and …
Electron Beam Lithography Throughput And Resolution Enhancement With Innovative Blanker Design, Junru Ruan
Electron Beam Lithography Throughput And Resolution Enhancement With Innovative Blanker Design, Junru Ruan
Legacy Theses & Dissertations (2009 - 2024)
Electron Beam Lithography (EBL) is one of the most important and most widely used methods for nano-fabrication. The primary advantage of electron beam lithography is its high resolution, and its ability to expose nanometer features without a mask. On the other hand, one of the key limitations of electron beam lithography is throughput. Slow blanking speed is one of the major bottlenecks for the system speed. In this dissertation, I will first review the prior literature of high speed blanking. Thorough theoretical and experimental studies are done on the existing designs. Physical models are built and analytical ray tracing is …
A Study Of Reticle Non-Flatness Induced Image Placement Error In Extreme Ultraviolet Lithography, Sudharshanan Raghunathan
A Study Of Reticle Non-Flatness Induced Image Placement Error In Extreme Ultraviolet Lithography, Sudharshanan Raghunathan
Legacy Theses & Dissertations (2009 - 2024)
As the semiconductor industry continues scaling devices to smaller sizes, the need for next generation lithography technology for fabricating these small structures has always been at the forefront. Over the past few years, conventional optical lithography technology which has adopted a series of resolution enhancement techniques to support the scaling needs is expected to run out of steam in the near future. Extreme Ultra Violet lithography (EUVL) is being actively pursued by the semiconductor industry as one of the most promising next generation lithographic technologies. Most of the issues unique to EUVL arise from the use of 13.5 nm light …
A Study Of Cantilever-Free Instrumentation For Nanoscale Magnetic Measurements, Bruce Adair Altemus
A Study Of Cantilever-Free Instrumentation For Nanoscale Magnetic Measurements, Bruce Adair Altemus
Legacy Theses & Dissertations (2009 - 2024)
The evolution of the Atomic Force Microscope (AFM) into the Magnetic Force Microscope (MFM) and Magnetic Resonance Force Microscope (MRFM) has had a substantial impact on the characterization of nanoscale phenomena. Detection of 10-17 Newtons per root Hertz has occurred with use of an ultra-sensitive cantilever along with optical interferometry methods within these geometries. The sensitivity of these platforms is dependent on the characteristics of the cantilever, where increased length and a low Young's modulus increase the force sensitivity (meters/Newtons). Using IC fabrication techniques, the realization of generating cantilevers with this sensitivity is feasible, but stress compensation layers are required …
A Study Of Cantilever-Free Instrumentation For Nanoscale Magnetic Measurements, Bruce Adair Altemus
A Study Of Cantilever-Free Instrumentation For Nanoscale Magnetic Measurements, Bruce Adair Altemus
Legacy Theses & Dissertations (2009 - 2024)
The evolution of the Atomic Force Microscope (AFM) into the Magnetic Force Microscope (MFM) and Magnetic Resonance Force Microscope (MRFM) has had a substantial impact on the characterization of nanoscale phenomena. Detection of 10-17 Newtons per root Hertz has occurred with use of an ultra-sensitive cantilever along with optical interferometry methods within these geometries. The sensitivity of these platforms is dependent on the characteristics of the cantilever, where increased length and a low Young's modulus increase the force sensitivity (meters/Newtons). Using IC fabrication techniques, the realization of generating cantilevers with this sensitivity is feasible, but stress compensation layers are required …