Electrical and Electronics Commons^™

Volume Holographic Optical Elements, Ching-Cherng Sun, Partha P. Banerjee

Electrical and Computer Engineering Faculty Publications

The final two papers are concerned with the analysis of novel holograms. Banerjee et al. investigate holographic recording and reconstruction for edge-lit holograms recorded in a 90-degree geometry. Various cases of recording and readout that incorporate propagational diffraction have been modeled. It is shown that the 90-degree geometry can result in beam shaping, as evidenced through preliminary experimental results with photorefractive lithium niobate. Nguyen et al. propose a new approach for designing computer-generated holograms. An artificial neural network is used to initiate the genetic algorithm so that the high computation cost of genetic algorithms for synthesizing holograms is significantly reduced …

Simulation Of Hot Electron And Quantum Effects In Algan/Gan Heterostructure Field Effect Transistors, N. Braga, R. Mickevicius, R. Gaska, H. Xu, M. S. Shur, M. Asif Khan, Grigory Simin, J. Yang

Faculty Publications

We report on simulations of electrical characteristics of AlGaN/(InGaN)/GaN heterostructurefield effect transistors with quantum and hot electroneffects taken into account. Polarization charges lead to quantum confinement of electrons in the channel and to the formation of two-dimensional electron gas. The electron quantization leads to the spread of the electronwave function into the barrier and bulk but does not have significant impact on dc electrical characteristics.Hot electrons play an important part in the charge transport by spilling over into the bulk GaN where they are captured by traps. This leads to negative differential conductivity, which is also observed experimentally. The simulation …

Double-Scaled Potential Profile In A Group-Iii Nitride Alloy Revealed By Monte Carlo Simulation Of Exciton Hopping, K. Kazlauskas, G. Tamulaitis, A. Zukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska

Faculty Publications

The temperature dependences of the peak position and width of the photoluminescence band in Al_0.1In_0.01Ga_0.89N layers were explained by Monte Carlo simulation of exciton localization and hopping. The introduction of a doubled-scaled potential profile due to inhomogeneous distribution of indium allowed obtaining a good quantitative fit of the experimental data. Hopping of excitons was assumed to occur through localized states distributed on a 16 meV energy scale within the In-rich clusters with the average energy in these clusters dispersed on a larger (42 meV) scale.

Examination Of Focused Beam Propagation Through A Finite Non-Reciprocal Planar Chiral Slab Using Complex Fresnel Coefficients And Dual Transforms, Monish Ranjan Chatterjee, Sumit Nema, Partha P. Banerjee

Electrical and Computer Engineering Faculty Publications

Recently, uniform plane wave propagation across a nonchiral-chiral interface was examined via the development of appropriate Fresnel coefficients. In this extension, propagation of focused uniform and profiled beams through a finite, planar nonreciprocal chiral slab is investigated using complex Fresnel coefficients via angular plane wave decomposition and dual transforms.

Revisiting The Fresnel Coefficients For Uniform Plane Wave Propagation Across A Nonchiral, Reciprocal And Chiral, Nonreciprocal Interface, Monish Ranjan Chatterjee, Sumit Nema

Electrical and Computer Engineering Faculty Publications

The problem of EM wave propagation in non-reciprocal chiral media has been studied by several investigators. In a recent approach, a dual-transform technique has been developed to study the problem of such propagation under paraxial and slow-envelope variation conditions.

In this paper, we first outline some of the results obtained using the dual transform technique for arbitrary boundary conditions within the left boundary of a semi-infinite, non-reciprocal chiral medium for a uniform plane wave, and a fundamental Gaussian-profiled beam. Next, we explore the problem of a uniform EM wave incident at an oblique angle at an interface between a reciprocal, …

Implementation Of A Si/Sic Hybrid Optically Controlled High-Power Switching Device, Prashant Bhadri, Kuntao Ye, Elena A. Guliants, Fred R. Beyette Jr.

Electrical and Computer Engineering Faculty Publications

The ever-increasing performance and economy of operation requirements placed on commercial and military transport aircraft are resulting in very complex systems. As a result, the use of fiber optic component technology has lead to high data throughput, immunity to EMI, reduced certification and maintenance costs and reduced weight features. In particular, in avionic systems, data integrity and high data rates are necessary for stable flight control. Fly-by-Light systems that use optical signals to actuate the flight control surfaces of an aircraft have been suggested as a solution to the EMI problem in avionic systems. Current fly-by-light systems are limited by …

Translation Of 'Balika Badhu: A Selected Anthology Of Bengali Short Stories', Monish Ranjan Chatterjee

Electrical and Computer Engineering Faculty Publications

This project, which began with the desire to render into English a rather long tale by Bimal Kar about five years ago, eventually grew into a considerably more extended compilation of Bengali short stories by 10 of the most well-known practitioners of that art since the heyday of Rabindranath Tagore. The collection is limited in many ways, not the least of which being that no woman writer has been included, and that it contains only a baker's dozen stories (if we count Bonophool's micro-stories collectively as one ) — a number pitifully small considering the vast and prolific field of …

A 0.5 Μm Thick Polysilicon Schottky Diode With Rectification Ratio Of 10^6, Elena A. Guliants, Chunhai Ji, Young J. Song, Wayne A. Anderson

Electrical and Computer Engineering Faculty Publications

Polycrystalline Si films, 0.5-mm thick, were obtained as a result of metal-induced growth by sputtering from a Si target on 25 nm thick Ni prelayers at 525 °C. Silicon grew heteroepitaxially on the NiSi2 layer formed due to the reaction between the sputtered Si atoms and Ni. Schottky diodes were fabricated on the Si films by deposition of a Schottky metal on the front surface of the film while Ni disilicide provided an intimate ohmic contact at the back. A Pd/n-Si diode using an n-Si film annealed for 2 h at 700 °C in forming gas demonstrated a rectification ratio …

Self-Assembly Of Spatially Separated Silicon Structures By Si Heteroepitaxy On Ni Disilicide, Elena A. Guliants, Chunhai Ji, Wayne A. Anderson

Electrical and Computer Engineering Faculty Publications

A nonlithographic approach to produce self-assembled spatially separated Si structures for nanoelectronic applications was developed, employing the metal-induced silicon growth. Densely packed Si whiskers, 500–800 nm thick and up to 2500 nm long, were obtained by magnetron sputtering of Si on a 25 nm thick Ni prelayer at 575 °C. The nucleation of the NiSi2 compound at the Ni–Si interface followed by the Si heteroepitaxy on the lattice-matched NiSi2 is suggested to be the driving force for the whisker formation.

Induced Strain Mechanism Of Current Collapse In Algan/Gan Heterostructure Field-Effect Transistors, Grigory Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

Gated transmission line model pattern measurements of the transient current–voltage characteristics of AlGaN/GaN heterostructurefield-effect transistors(HFETs) and metal–oxide–semiconductor HFETs were made to develop a phenomenological model for current collapse. Our measurements show that, under pulsed gate bias, the current collapse results from increased source–gate and gate–drain resistances but not from the channel resistance under the gate. We propose a model linking this increase in series resistances (and, therefore, the current collapse) to a decrease in piezoelectriccharge resulting from the gate bias-induced nonuniform strain in the AlGaN barrier layer.

Feedback Correction Of Angular Error In Grating Readout, Monish Ranjan Chatterjee, Sundaram Ramachandran

Electrical and Computer Engineering Faculty Publications

Angular and wavelength READ beam errors in holographic interconnection systems are often a recurrent problem. Several strategies have been proposed to minimize or eliminate such READOUT misalignments.

Some years ago, Chatterjee and co-workers proposed a method involving READ beam wavelength tuning to correct output angular errors. In this paper, we investigate the possibility of using an acousto-optic (A-O) Bragg cell with optoelectronic feedback to dynamically correct the scattered beam for deviations in the incidence direction of the READ beam of a hologram. The concept here is based on an acoustic frequency feedback strategy used recently by Balakshy and Kazaryan for …

Low Frequency Noise In Gan Metal Semiconductor And Metal Oxide Semiconductor Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang

Faculty Publications

The low frequency noise in GaNfield effect transistors has been studied as function of drain and gate biases. The noise dependence on the gate bias points out to the bulk origin of the low frequency noise. The Hooge parameter is found to be around 2×10⁻³ to 3×10⁻³.Temperature dependence of the noise reveals a weak contribution of generation–recombination noise at elevated temperatures.

Overview Of Acousto-Optic Bistability, Chaos, And Logical Applications, Monish Ranjan Chatterjee, Erol Sonmez

Electrical and Computer Engineering Faculty Publications

An overview is presented of the key results in the field of acousto-optic bistability in the past two decades. It is shown that the basic acousto-optic bistable device may be described as a nonlinear dynamical system which satisfies a quadratic map. Thereafter, details are presented of several analytical methods, computer modeling approaches, including the SPICE circuit modeling technique, and experiments that have been used to understand the phenomenon.

Extensions to logical and digital applications are also discussed.

Study Of Dynamics And Mechanism Of Metal-Induced Silicon Growth, Elena A. Guliants, Wayne A. Anderson

Electrical and Computer Engineering Faculty Publications

The present study addresses the mechanism of metal-induced growth of device-quality silicon thin films. Si deposition was performed by magnetron sputtering on a 25-nm-thick Ni prelayer at 525–625 °C and yielded a continuous, highly crystalline film with a columnar structure. A Ni disilicide intermediate layer formed as a result of the Ni reaction with Si deposit provides a sufficient site for the Si epitaxial growth because lattice mismatch is small between the two materials. The reaction between Ni and Si was observed to progress in several stages. The NixSiy phase evolution in a Ni:Si layer was studied by x-ray photoelectron …

High Electron Mobility In Algan/Gan Heterostructures Grown On Bulk Gan Substrates, E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, Grigory Simin, X. Hu, M. Asif Khan, M. S. Shur, R. Gaska, D. Maude

Faculty Publications

Dislocation-free high-quality AlGaN/GaN heterostructures have been grown by molecular-beam epitaxy on semi-insulating bulk GaN substrates. Hall measurements performed in the 300 K–50 mK range show a low-temperature electron mobility exceeding 60 000 cm²/V s for an electron sheet density of 2.4×10¹²cm⁻². Magnetotransport experiments performed up to 15 T exhibit well-defined quantum Hall-effect features. The structures corresponding to the cyclotron and spin splitting were clearly resolved. From an analysis of the Shubnikov de Hass oscillations and the low-temperature mobility we found the quantum and transport scattering times to be 0.4 and 8.2 ps, respectively. The …

Gan-Algan Heterostructure Field-Effect Transistors Over Bulk Gan Substrates, M. Asif Khan, J. W. Yang, W. Knap, E. Frayssinet, X. Hu, Grigory Simin, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, R. Gaska, M. S. Shur, B. Beaumont, M. Teisseire, G. Neu

Faculty Publications

We report on AlGaN/GaN heterostructures and heterostructurefield-effect transistors(HFETs) fabricated on high-pressure-grown bulk GaN substrates. The 2delectron gas channel exhibits excellent electronic properties with room-temperature electron Hall mobility as high as μ=1650 cm²/V s combined with a very large electron sheet density n_s≈1.4×10¹³ cm⁻².The HFET devices demonstrated better linearity of transconductance and low gate leakage, especially at elevated temperatures. We also present the comparative study of high-current AlGaN/GaN HFETs(n_sμ>2×10¹⁶ V⁻¹ s⁻¹) grown on bulk GaN, sapphire, and SiC substrates under the same conditions. We demonstrate that in …

Accumulation Hole Layer In P-Gan/Algan Heterostructures, M. S. Shur, A. D. Bykhovski, R. Gaska, J. W. Yang, Grigory Simin, M. A. Khan

Faculty Publications

We present the results on piezoelectric and pyroelectricdoping in AlGaN-on-GaN and GaN-on-AlGaN heterostructures and demonstrate p-GaN/AlGaN structures with accumulation hole layer. Our results indicate that polarization charge can induce up to 5×10¹³ cm⁻² holes at the AlGaN/GaN heterointerfaces. We show that the transition from three-dimensional (3D) to two-dimensional (2D) hole gas can be only achieved for hole sheet densities on the order of 10¹³ cm⁻² or higher. At lower densities, only 3D-hole accumulation layer may exist. These results suggest that a piezoelectrically induced 2D-hole gas can be used for the reduction of the base spreading resistance …

Rotation-Invariant Synthetic Discriminant Function Filter For Pattern Recognition, Vahid R. Riasati, Partha P. Banerjee, Mustafa A. G. Abushagur, Kenneth B. Howell

Electrical and Computer Engineering Faculty Publications

The ring synthetic discriminant function (RSDF) filter for rotation-invariant response is discussed for pattern recognition. This method uses one half of a slice of the Fourier transform of the object to generate the transfer function of the filter. This is accomplished by rotating the one half of a slice in the Fourier domain through 2π rad about the zero-frequency point of the Fourier plane. This filter has the advantage of always matching at least one half of a slice of the Fourier transform of any rotation of the image. An analytical discussion of the filter construction and correlation results are …

Characterization Of Poly-Si Thin Films Deposited By Magnetron Sputtering Onto Ni Prelayers, Elena A. Guliants, Wayne A. Anderson

Electrical and Computer Engineering Faculty Publications

A method of producing a polycrystalline silicon thin film on a foreign substrate without subsequent annealing has been developed. Thermally evaporated 5–100 nm thick Nifilms served as prelayers for magnetron sputtered Si thin films. A continuous film was obtained as a result of metal induced growth of polysilicon during low temperature (below 600 °C) deposition. The film uniformity is promising for large area device applications. The influence of the Ni prelayer thickness on the grain size of thus obtained films was investigated. Atomic force microscopy and cross-sectional scanning electron microscopy studies revealed features in the 150–600 nm size range while …

Nonlinear Self-Organization In Photorefractive Materials, Partha P. Banerjee, Nickolai Kukhtarev, John O. Dimmock

Electrical and Computer Engineering Faculty Publications

This chapter discusses self-organization and its effects in optics. One of the most exciting and potentially useful areas of current research in optics involves the understanding and exploitation of self-organization in nonlinear optical systems. This self-organization may sometimes lead to the evolution of complex spatial patterns that can be regarded as the nonlinear eigenmodes of the system. Generation of these patterns is characteristically marked by the presence of intensity thresholds. In a nonlinear system with complicated temporal dynamics, it turns out that one cannot retain purity in spatial dimensionality. It is therefore equally important to investigate the dynamics of the …

Piezoelectric Doping In Alingan/Gan Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, A. D. Bykovski

Faculty Publications

We report on the piezoelectricdoping and two-dimensional (2D) electron mobility in AlInGaN/GaN heterostructures grown on 6H–SiC substrates. The contribution of piezoelectricdoping to the sheet electron density was determined using an In-controlled built-in strain-modulation technique. Our results demonstrate that in strained AlGaN/GaN heterostructures, the piezoelectric field generates at least 50% of the 2D electrons. The strain modulation changes the potential distribution at the heterointerface, which, in turn, strongly affects the 2D electron mobility, especially at cryogenic temperatures. The obtained results demonstrate the potential of strain engineering and piezoelectricdoping for GaN-based electronics.

Low-Frequency Noise In N-Gan With High Electron Mobility, M. E. Levinshtein, S. L. Rumyantsev, D. C. Look, R. J. Molnar, M. Asif Khan, Grigory Simin, V. Adivarahan, M. S. Shur

Faculty Publications

We report on the results of measurements of low frequency noise in n-type gallium nitride (GaN) grown on sapphire with 300 K electron mobility of 790 cm²/V s. The noise spectra have the form of 1/f noise with a Hooge parameter α of approximately 5×10⁻². This value of α is two orders of magnitude smaller than that observed before in n-GaN. The obtained results show that the level of flicker noise in GaN, just like that in GaAs and Si, strongly depends on the structural perfection of the material (the amplitude of the 1/f …

Guest Editorial: Special Section On Acousto-Optic Devices And Optical Information Processing: Research And Developments, Partha P. Banerjee, Ting-Chung Poon

Electrical and Computer Engineering Faculty Publications

This guest editorial provides an overview of the topical area and an introduction to the articles featured in the special section.

Laser Beam Profile Deformation Effect During Bragg Acousto-Optic Interaction: A Non-Paraxial Approximation, Ray S. Huang, Chen-Wen Tarn, Partha P. Banerjee, Doungchin Cao

Electrical and Computer Engineering Faculty Publications

It is commonly known that the spatial profiles of the diffracted light beams during Bragg acousto-optic interaction are distorted due to the Bragg angle selection mechanism. All the conventional studies on this effect use the paraxial approximation. But this approximation should be amended when the incident angle of the light is large enough that the diffracted light waves do not propagate closely along the optic axis of the acousto-optic diffraction system. By using a spatial Fourier transform approach, we rigorously study the light beam profile deformation effect of the diffracted light during the Bragg acousto-optic interaction beyond the paraxial approximation. …

Examination Of Beam Propagation In Misaligned Holographic Gratings And Comparison With The Acousto-Optic Transfer Function Model For Profiled Beams, Monish Ranjan Chatterjee, David D. Reagan

Electrical and Computer Engineering Faculty Publications

A transfer function formalism developed earlier for the propagation of profiled optical beams through acousto-optic Bragg cells is revisited and applied to a thick holographic grating. The results based on the holographic coupled wave model and the acousto-optic multiple scattering model are shown to be compatible, and equivalent parameters such as the Q and grating strength are defined for the two systems. Results for a Gaussian spatial profile are numerically computed and compared. For the holographic grating, a profiled beam may be interpreted as an angular misalignment or Bragg-angle mismatch problem. The case of Bragg-wavelength mismatch is also investigated for …

Self-Enhancement Of Dynamic Gratings In Photogalvanic Crystals, Nickolai Kukhtarev, Sergei F. Lyuksyutov, Preben Buchhave, Tatiana Kukhtareva, K. Sayano, Partha P. Banerjee

Electrical and Computer Engineering Faculty Publications

We have developed a compact closed-form solution of the band transport model for high-contrast gratings in photogalvanic crystals. Our solution predicts the effect of the photoconductivity and the electric field grating enhancement due to the photogalvanic effect. We predict a pronounced dependence of the steady-state photogalvanic current on the contrast of the interference pattern and an increase of holographic storage time due to the enhancement of the photoconductivity grating contrast. In the high contrast limit and a large photogalvanic effect the refractive index grating will be shifted from the position of the intensity modulation pattern, contrary to the usually adopted …

Experimental Investigations Of Wavelength And Angular Errors In Holographic Gratings With Non-Bragg-Matched Read Beams, Monish Ranjan Chatterjee, Vivek Ray

Electrical and Computer Engineering Faculty Publications

Perfect Bragg matching is generally desirable for accurate optical interconnections with holographic gratings. In reality, however, gratings may be illuminated by READ beams with non-Bragg-matched angles, or wavelengths, or both. In such cases, the scattered beams are generally misdirected, and may suffer loss of efficiency and possibly more serious errors such as crosstalk noise or missed connections. A conventional wave-vector triad method of analyzing the scattered beam errors leads readily to near-Bragg estimates of the output angular misalignment. However, the READ wave-vector triads appear to indicate a possible wavelength shift in the output beam even with a Bragg-matched READ wavelength, …

Fuel Cells, Frederick J. Munster Jr.

Maine Collection

Fuel Cells

by Frederick J. Munster Jr.

Edited by: Mr. Christopher Carroll

Maine Department of Economic Development, Augusta, Maine, 1998.

Contents: Hydrogen / Hydrogen Safety / Electrolysis / Electrolyzers / History of Fuel Cells / How Fuel Cells Operate / Fuel Cell Types / Fuel Cell Electrochemistry / Power Systems / Fuel Cells in Transportation / Hydrogen Powered Internal Combustion Engines / Home, Garden, Education and Industry / For More Information / Glossary / References

Attitude Measurement, Mark A. Stedham, Partha P. Banerjee, Seiji Nishifuji, Shogo Tanaka

Electrical and Computer Engineering Faculty Publications

In many practical situations, it is important to determine and measure the attitude of a particular vehicle, such as a ship, an airplane, a piece of mechanical equipment such as a, crane lifter, or a spacecraft. For this reason, many attitude sensors have been developed with advanced computer and semiconductor technologies. This section first introduces the various attitude sensors with an explanation of their operating principles and then presents several methodologies for attitude measurement and determination, including ships and crane lifters, aircraft, and spacecraft applications.

Extended Permutation Filters And Their Application To Edge Enhancement, Russell C. Hardie, Kenneth E. Barner

Electrical and Computer Engineering Faculty Publications

Extended permutation (EP) filters are defined and analyzed. In particular, we focus on extended permutation rank selection (EPRS) filters. These filters are constrained to output an order statistic from an extended observation vector. This extended vector includes N observation samples and K statistics that are functions of the observation samples. The rank permutations from selected samples in this extended observation vector are used as the basis for selecting an order statistic output. We show that by including the sample mean in the extended observation vector, the filters exhibit excellent edge enhancement properties. We also show that several previously defined classes …