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Electrical & Computer Engineering Faculty Publications

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Articles 391 - 401 of 401

Full-Text Articles in Electrical and Computer Engineering

Strains In Si-Onsio2 Structures Formed By Oxygen Implantation: Raman Scattering Characterization, D.J. Olego, H. Baumgart, G.K. Celler Jan 1988

Strains In Si-Onsio2 Structures Formed By Oxygen Implantation: Raman Scattering Characterization, D.J. Olego, H. Baumgart, G.K. Celler

Electrical & Computer Engineering Faculty Publications

Low-temperature Raman scattering measurements were carried out to characterize Si-on-SiO2 structures formed by oxygen implantation and subsequent furnace or lamp annealing. The experiments were conducted with 413.1 nm laser light to probe only the thin Si layers at the top of the structures. The Raman spectra of the furnace-annealed samples are red shifted and broadened when compared with a virgin Si surface. The shifts and broadenings decrease with increasing annealing temperatures but they are still present in samples annealed above 1250°C for 3 h. No shifts or broadenings affect the Raman peaks of the layers, which were lamp annealed …

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Raman Scattering Characterization Of The Microscopic Structure Of Semi-Insulating Polycrystalline Si Thin Films, D.J. Olego, H. Baumgart Jan 1988

Raman Scattering Characterization Of The Microscopic Structure Of Semi-Insulating Polycrystalline Si Thin Films, D.J. Olego, H. Baumgart

Electrical & Computer Engineering Faculty Publications

Raman scattering experiments were carried out to study the microscopic structure of semi-insulating polycrystalline Si (SIPOS) thin films prepared by low-pressure chemical vapor deposition. The samples contain 18, 25, and 30 at. % of oxygen and after growth they were annealed at 900 and 1000°C for 30 min. The Raman spectra show in the vibrational region of the optical frequencies of Si two bands, which arise from scattering in crystalline grains and disordered forms of Si. The behavior of these bands as a function of oxygen content and annealing temperatures was established in detail. The crystallinelike band peaks below the …

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An Optically Controlled Closing And Opening Semiconductor Switch, K. H. Schoenbach, V. K. Lakdawala, R. Germer, S. T. Ko Jan 1988

An Optically Controlled Closing And Opening Semiconductor Switch, K. H. Schoenbach, V. K. Lakdawala, R. Germer, S. T. Ko

Electrical & Computer Engineering Faculty Publications

A concept for a bulk semiconductor switch is presented, where the conductivity is increased and reduced, respectively, through illumination with light of different wavelengths. The increase in conductivity is accomplished by electron ionization from deep centers and generation of bound holes. The reduction of conductivity is obtained by hole ionization from the excited centers and subsequent recombination of free electrons and holes. The transient behavior of electron and hole density in a high power semiconductor (GaAs:Cu) switch is computed by means of a rate equation model. Changes in conductivity by five orders of magnitude can be obtained.

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Comment On "Orientation, Alignment, And Hyperfine Effects On Dissociation Of Diatomic Molecules To Open Shell Atoms", Mark D. Havey, Linda L. Vahala Jan 1987

Comment On "Orientation, Alignment, And Hyperfine Effects On Dissociation Of Diatomic Molecules To Open Shell Atoms", Mark D. Havey, Linda L. Vahala

Electrical & Computer Engineering Faculty Publications

A recent paper in this journal [Y. B. Band e t a l., J. Chem. Phys. 8 4, 3762 (1986)] reported parameters describing orientation and alignment produced, in an axial recoil limit, by one photondissociation of diatomic molecules. Reported also were values, applicable to the resonance transitions of the alkali atoms, for orientation and alignment depolarization coefficients. Most of the numerical values reported for the coefficients were incorrect, in some cases by as much as a factor of 2. We report a tabulation of correct depolarization coefficients applicable to the resonance transitions of common alkali isotopes. Further, the coefficients …

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Faceting At The Silicon (100) Crystal-Melt Interface: Theory And Experiment, Uzi Landman, W.D. Luedtke, R.N. Barnett, C.L. Cleveland, M.W. Ribarsky, Emil Arnold, S. Ramesh, H. Baumgart, A. Martinez, B. Khan Jan 1986

Faceting At The Silicon (100) Crystal-Melt Interface: Theory And Experiment, Uzi Landman, W.D. Luedtke, R.N. Barnett, C.L. Cleveland, M.W. Ribarsky, Emil Arnold, S. Ramesh, H. Baumgart, A. Martinez, B. Khan

Electrical & Computer Engineering Faculty Publications

Molecular-dynamics simulations and in situ experimental observations of the melting and equilibrium structure of the crystalline Si(100)-melt interface are described. The equilibrium interface is structured, exhibiting facets established on (111) planes.

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Silicon-On-Insulator Technology By Crystallization On Quartz Substrates, Helmut Baumgart Jan 1986

Silicon-On-Insulator Technology By Crystallization On Quartz Substrates, Helmut Baumgart

Electrical & Computer Engineering Faculty Publications

The purpose of the novel zone-melting recrystallization process (ZMR) is to produce single crystalline Si films on Si02 of high crystalline perfection, which are suitable for device fabrication and subsequent industrial applications. However, silicon films grown on amorphous insulating substrates without seeding contain regularly spaced subgrain boundaries as their predominant growth defect and to a lesser degree twin boundaries and some grain boundaries. Detailed materials studies have revealed the core structure of these extended defects and the fundamental mechanisms responsible for subgrain boundary formation. The nature and origin of subgrain boundaries is reviewed and a model for polygonization of the …

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Seeded Oscillatory Growth Of Si Over Sio² By Cw Laser Irradiation, G.K. Celler, L. E. Trimble, K.K. Ng, H.J. Leamy, H. Baumgart Jan 1982

Seeded Oscillatory Growth Of Si Over Sio² By Cw Laser Irradiation, G.K. Celler, L. E. Trimble, K.K. Ng, H.J. Leamy, H. Baumgart

Electrical & Computer Engineering Faculty Publications

Extensive seeded epitaxial growth of crystalline Si over SiO2 was achieved by an oscillatory regrowth method applied to rectangular Si pads recessed into a thick SiO2 film. Narrow (≃5 μm) via holes linked the pads with the bulk (100) Si substrate. Oriented single crystals propagated as far as 500 μm from the seeding area, following the long term advance of a scanned focused laser beam.

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Electrical And Structural Properties Of P-N Junctions In Cw Laser Annealed Silicon, M. Maier, D. Bimberg, G. Fernholz, H. Baumgart, F. Phillipp Jan 1982

Electrical And Structural Properties Of P-N Junctions In Cw Laser Annealed Silicon, M. Maier, D. Bimberg, G. Fernholz, H. Baumgart, F. Phillipp

Electrical & Computer Engineering Faculty Publications

Depth profiles of the electrical quality of ion implanted and cw laser annealed p-n junctions in silicon are obtained for the first time by secondary ion mass spectroscopy. A comparison with the crystallographic properties of the surface and the junction as observed by Nomarski optical microscopy as well as cross-sectional and plan view transmission electron microscopy is made. Samples containing slip dislocations show better insulation and a lower reverse bias current across the p-n junction as compared to samples with a perfect surface in agreement with current-voltage characteristics. Small dislocation loops located at the junction are found to degrade the …

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Slip Dislocation Formation During Continuous Wave Laser Annealing Of Silicon, Helmut Baumgart Jan 1981

Slip Dislocation Formation During Continuous Wave Laser Annealing Of Silicon, Helmut Baumgart

Electrical & Computer Engineering Faculty Publications

High-voltage electron microscopy (HVEM) has been used for the investigation of the defect structure in cw laser-annealed silicon. We report for the first time a (HVEM) analysis of the formation processes involved in the nucleation and glide of slip dislocations during epitaxial regrowth by cw laser annealing of ion-implantation damaged silicon layers. Based on the combined optical and HVEM observations a model of the dislocation generation and glide processes is presented.

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Luminescence In Slipped And Dislocation-Free Laser-Annealed Silicon, R.H. Uebbing, P. Wagner, H. Baumgart, H. J. Queisser Jan 1980

Luminescence In Slipped And Dislocation-Free Laser-Annealed Silicon, R.H. Uebbing, P. Wagner, H. Baumgart, H. J. Queisser

Electrical & Computer Engineering Faculty Publications

Photoluminescence of cw laser-annealed silicon shows a dramatic difference in electronic behavior of the reconstructed material depending upon either creation or suppression of dislocations. Beyond a critical exposure time slip appears, and the luminescence of these samples is dominated by dislocation-related defect levels.

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Stable Equilibrium Statistical States For Spheromaks, George Vahala, Linda L. Vahala Jan 1979

Stable Equilibrium Statistical States For Spheromaks, George Vahala, Linda L. Vahala

Electrical & Computer Engineering Faculty Publications

Incompressible nondissipative magnetohydrodynamic turbulence is treated for spherical systems. From the absolute equilibrium expectation values of the fields one can investigate those initially quiescent states for which no large mean square velocity will develop. This stable state is force-free and gives rise to the Hill vortex structure for the magnetic flux surfaces.

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