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Articles 181 - 210 of 364

Full-Text Articles in Electrical and Computer Engineering

Switching Dynamics Of A Magnetostrictive Single-Domain Nanomagnet Subjected To Stress, Kuntal Roy, Supriyo Bandyopadhyay, Jayasimha Atulasimha Jan 2011

Switching Dynamics Of A Magnetostrictive Single-Domain Nanomagnet Subjected To Stress, Kuntal Roy, Supriyo Bandyopadhyay, Jayasimha Atulasimha

Electrical and Computer Engineering Publications

The temporal evolution of the magnetization vector of a single-domain magnetostrictive nanomagnet, subjected to in-plane stress, is studied by solving the Landau-Lifshitz-Gilbert equation. The stress is ramped up linearly in time, and the switching delay, which is the time it takes for the magnetization to flip, is computed as a function of the ramp rate. For high levels of stress, the delay exhibits a nonmonotonic dependence on the ramp rate, indicating that there is an optimum ramp rate to achieve the shortest delay. For constant ramp rate, the delay initially decreases with increasing stress but then saturates, showing that the …

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Ultrafast Decay Of Hot Phonons In An Algan/Aln/Algan/Gan Camelback Channel, J. H. Leach, M. Wu, H. Morkoç, J. Liberis, E. Šermukšnis, M. Ramonas, A. Matulionis Jan 2011

Ultrafast Decay Of Hot Phonons In An Algan/Aln/Algan/Gan Camelback Channel, J. H. Leach, M. Wu, H. Morkoç, J. Liberis, E. Šermukšnis, M. Ramonas, A. Matulionis

Electrical and Computer Engineering Publications

A bottleneck for heat dissipation from the channel of a GaN-based heterostructure field-effect transistor is treated in terms of the lifetime of nonequilibrium (hot) longitudinal optical phonons, which are responsible for additional scattering of electrons in the voltage-biased quasi-two-dimensional channel. The hot-phonon lifetime is measured for an Al0.33Ga0.67N/AlN/Al0.1Ga0.9N/GaN heterostructure where the mobile electrons are spread in a composite Al0.1Ga0.9N/GaN channel and form a camelback electron density profile at high electric fields. In accordance with plasmon-assisted hot-phonon decay, the parameter of importance for the lifetime is not the total …

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Field-Assisted Emission In Algan/Gan Heterostructure Field-Effect Transistors Using Low-Frequency Noise Technique, Cemil Kayis, C. Y. Zhu, Mo Wu, X. Li, Ümit Özgür, Hadis Morkoç Jan 2011

Field-Assisted Emission In Algan/Gan Heterostructure Field-Effect Transistors Using Low-Frequency Noise Technique, Cemil Kayis, C. Y. Zhu, Mo Wu, X. Li, Ümit Özgür, Hadis Morkoç

Electrical and Computer Engineering Publications

We utilized low-frequency noise measurements to probe electron capture and emission from the traps in AlGaN/GaN heterostructurefield-effect transistors as a function of drain bias. The excess noise-spectra due to generation-recombination effect shifted higher in frequency with the elevated temperature from room temperature up to 446 K. These temperature dependent noise measurements were carried out for four different drain-bias values from 4 up to 16 V with 4 V increments. The shift of the excess-noise in frequency was also seen with increasing drain bias. The characteristic recharging times for the trapped electrons varied within the range of 26 μs − …

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Charge Storage Characteristics Of Ultra-Small Pt Nanoparticle Embedded Gaas Based Non-Volatile Memory, Reginald Jeff, M Yun, B Ramalingam, B Lee, V Misra, Gregory Edward Triplett, Shubhra Gangopadhyay Jan 2011

Charge Storage Characteristics Of Ultra-Small Pt Nanoparticle Embedded Gaas Based Non-Volatile Memory, Reginald Jeff, M Yun, B Ramalingam, B Lee, V Misra, Gregory Edward Triplett, Shubhra Gangopadhyay

Electrical and Computer Engineering Publications

Charge storage characteristics of ultra-small Pt nanoparticle embedded devices were characterized by capacitance-voltage measurements. A unique tilt target sputtering configuration was employed to produce highly homogenous nanoparticle arrays. Pt nanoparticle devices with sizes ranging from ∼0.7 to 1.34 nm and particle densities of ∼3.3–5.9 × 1012 cm−2 were embedded between atomic layer deposited and e-beam evaporated tunneling and blocking Al2O3 layers. These GaAs-based non-volatile memory devices demonstrate maximum memory windows equivalent to 6.5 V. Retention characteristics show that over 80% charged electrons were retained after 105 s, which is promising for device applications.

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Reduced Auger Recombination In Mid-Infrared Semiconductor Lasers, Robert Bedford, Gregory Edward Triplett, David H. Tomich, Stephan W. Koch, Jerome Moloney, Jorg Hader Jan 2011

Reduced Auger Recombination In Mid-Infrared Semiconductor Lasers, Robert Bedford, Gregory Edward Triplett, David H. Tomich, Stephan W. Koch, Jerome Moloney, Jorg Hader

Electrical and Computer Engineering Publications

A quantum-design approach to reduce the Auger losses in two micron InGaSb type-I quantum well edge-emitting lasers is reported. Experimentally realized structures show a 3X reduction in the threshold, which results in 4.6 lower Auger current loss at room temperature. This is equivalent to a carrier lifetime improvement of 5.7 and represents about a 19-fold reduction in the equivalent “Auger coefficient.”

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Growth And Characterization Of Non-Polar Gan Materials And Investigation Of Efficiency Droop In Ingan Light Emitting Diodes, Xianfeng Ni Aug 2010

Growth And Characterization Of Non-Polar Gan Materials And Investigation Of Efficiency Droop In Ingan Light Emitting Diodes, Xianfeng Ni

Theses and Dissertations

General lighting with InGaN light emitting diodes (LEDs) as light sources is of particular interest in terms of energy savings and related environmental benefits due to high lighting efficiency, long lifetime, and Hg-free nature. Incandescent and fluorescent light sources are used for general lighting almost everywhere. But their lighting efficiency is very limited: only 20-30 lm/W for incandescent lighting bulb, approximately 100 lm/W for fluorescent lighting. State-of-the-art InGaN LEDs with a luminous efficacy of over 200 lm/W at room temperature have been reported. However, the goal of replacing the incandescent and fluorescent lights with InGaN LEDs is still elusive since …

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An Efficient Implementation Of An Exponential Random Number Generator In A Field Programmable Gate Array (Fpga), Smitha Gautham Apr 2010

An Efficient Implementation Of An Exponential Random Number Generator In A Field Programmable Gate Array (Fpga), Smitha Gautham

Theses and Dissertations

Many physical, biological, ecological and behavioral events occur at times and rates that are exponentially distributed. Modeling these systems requires simulators that can accurately generate a large quantity of exponentially distributed random numbers, which is a computationally intensive task. To improve the performance of these simulators, one approach is to move portions of the computationally inefficient simulation tasks from software to custom hardware implemented in Field Programmable Gate Arrays (FPGAs). In this work, we study efficient FPGA implementations of exponentially distributed random number generators to improve simulator performance. Our approach is to generate uniformly distributed random numbers using standard techniques …

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Composite Kernel Feature Analysis For Cancer Classification, Sindhu Myla Apr 2010

Composite Kernel Feature Analysis For Cancer Classification, Sindhu Myla

Theses and Dissertations

Computed tomographic (CT) colonography, or virtual colonoscopy, is a promising technique for screening colorectal cancers by use of CT scans of the colon. Current CT technology allows a single image set of the colon to be acquired in 10-20 seconds, which translates into an easier, more comfortable examination than is available with other screening tests. Currently, however, interpretation of an entire CT colonography examination is time-consuming, and the reader performance for polyp detection varies substantially. To overcome these difficulties while providing a high detection performance of polyps, researchers are developing computer-aided detection (CAD) schemes that automatically detect suspicious lesions in …

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Tuning Of Electrical Properties In Inaln/Gan Hfets And Ba0.5sr0.5tio3/Yig Phase Shifters, Jacob H. Leach Mar 2010

Tuning Of Electrical Properties In Inaln/Gan Hfets And Ba0.5sr0.5tio3/Yig Phase Shifters, Jacob H. Leach

Theses and Dissertations

Engineers know well from an early point in their training the trials and tribulations of having to make design tradeoffs in order to optimize one performance parameter for another. Discovering tradeoff conditions that result in the elimination of a loss associated with the enhancement of some other parameter (an improvement over a typical tradeoff), therefore, ushers in a new paradigm of design in which the constraints which are typical of the task at hand are alleviated. We call such a design paradigm “tuning” as opposed to “trading off”, and this is the central theme of this work. We investigate two …

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Two-Subband Conduction In A Gated High Density Inaln/Aln/Gan Heterostructure, H. Cheng, C. Kurdak, J. H. Leach, M. Wu, Hadis Morkoç Jan 2010

Two-Subband Conduction In A Gated High Density Inaln/Aln/Gan Heterostructure, H. Cheng, C. Kurdak, J. H. Leach, M. Wu, Hadis Morkoç

Electrical and Computer Engineering Publications

Magnetotransport measurements on an In0.16Al0.84N/AlN/GaN gated Hall bar sample have been performed at 0.28 K. By the application of a gate voltage we were able to vary the total two-dimensional electron gas density from 1.83×1013 to 2.32×1013 cm−2. Two frequency Shubnikov–de Haas oscillations indicate occupation of two subbands by electrons. The density of electrons in the first and second sublevels are found to increase linearly with gate voltage with a slope of 2.01×1012 cm−2/V and 0.47×1012 cm−2/V, respectively. And the quantum lifetimes for the first and second subbands ranged from 0.55 to 0.95×10−13 s and from 1.2 to 2.1×10−13 s.

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Surface Plasmon Enhanced Uv Emission In Algan/Gan Quantum Well, J. Lin, A. Mohammadizia, A. Neogi, Hadis Morkoç, M. Ohtsu Jan 2010

Surface Plasmon Enhanced Uv Emission In Algan/Gan Quantum Well, J. Lin, A. Mohammadizia, A. Neogi, Hadis Morkoç, M. Ohtsu

Electrical and Computer Engineering Publications

The surface plasmon (SP) energy for resonant enhancement of light has shown to be modified by the epitaxial substrate and the overlying metalthin film. The modification of SP energy in AlGaN/GaN epitaxial layers is studied using spectroscopic ellipsometry for enhanced UV-light emission. Silver induced SP can be extended to the UV wavelength range by increasing the aluminum concentration in AlxGa1−xN epilayer. A threefold increase in the UV-light emission is observed from AlGaN/GaN quantum well due to silver induced SP. Photoluminescence lifetime measurements confirm the resonant plasmon induced increase in Purcell factor as observed from the PL intensity measurements.

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Ingan Staircase Electron Injector For Reduction Of Electron Overflow In Ingan Light Emitting Diodes, X. Ni, X. Li, J. Lee, S. Liu, Vitaliy Avrutin, Ü. Özgür, Hadis Morkoç, A. Matulionis, T. Paskova, G. Mulholland, K. R. Evans Jan 2010

Ingan Staircase Electron Injector For Reduction Of Electron Overflow In Ingan Light Emitting Diodes, X. Ni, X. Li, J. Lee, S. Liu, Vitaliy Avrutin, Ü. Özgür, Hadis Morkoç, A. Matulionis, T. Paskova, G. Mulholland, K. R. Evans

Electrical and Computer Engineering Publications

Ballistic and quasiballistic electron transport across the active InGaN layer are shown to be responsible for electron overflow and electroluminescence efficiency droop at high current levels in InGaN light emitting diodes both experimentally and by first-order calculations. An InGaN staircase electron injector with step-like increased In composition, an “electron cooler,” is proposed for an enhanced thermalization of the injected hot electrons to reduce the overflow and mitigate the efficiency droop. The experimental data show that the staircase electron injector results in essentially the same electroluminescence performance for the diodes with and without an electron blocking layer, confirming substantial …

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Effect Of Hot Phonon Lifetime On Electron Velocity In Inaln/Aln/Gan Heterostructure Field Effect Transistors On Bulk Gan Substrates, J. H. Leach, C. Y. Zhu, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, Hadis Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, T. Paskova, E. Preble, K. R. Evans Jan 2010

Effect Of Hot Phonon Lifetime On Electron Velocity In Inaln/Aln/Gan Heterostructure Field Effect Transistors On Bulk Gan Substrates, J. H. Leach, C. Y. Zhu, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, Hadis Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, T. Paskova, E. Preble, K. R. Evans

Electrical and Computer Engineering Publications

We report on electron velocities deduced from current gain cutoff frequency measurements on GaN heterostructurefield effect transistors(HFETs) with InAlN barriers on Fe-doped semi-insulating bulk GaN substrates. The intrinsic transit time is a strong function of the applied gate bias, and a minimum intrinsic transit time occurs for gate biases corresponding to two-dimensional electron gas densities near 9.3×1012 cm−2. This value correlates with the independently observed density giving the minimum longitudinal optical phonon lifetime. We expect the velocity, which is inversely proportional to the intrinsic transit time, to be limited by scattering with non equilibrium (hot) phonons at the high fields …

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Carrier Velocity In Inaln/Aln/Gan Heterostructure Field Effect Transistors On Fe-Doped Bulk Gan Substrates, J. H. Leach, M. Wu., X. Ni, X. Li, J. Xie, Ü. Özgür, Hadis Morkoç, T. Paskova, E. Preble, K. R. Evans, Chang-Zhi Lu Jan 2010

Carrier Velocity In Inaln/Aln/Gan Heterostructure Field Effect Transistors On Fe-Doped Bulk Gan Substrates, J. H. Leach, M. Wu., X. Ni, X. Li, J. Xie, Ü. Özgür, Hadis Morkoç, T. Paskova, E. Preble, K. R. Evans, Chang-Zhi Lu

Electrical and Computer Engineering Publications

We report microwave characteristics of field effect transistors employing InAlN/AlN/GaN heterostructures grown on low-defect-density bulk Fe-doped GaN substrates. We achieved unity current gain cutoff frequencies of 14.3 and 23.7 GHz for devices with gate lengths of 1 and 0.65 μm, respectively. Measurements as a function of applied bias allow us to estimate the average carrier velocity in the channel to be ∼1.0×107 cm/sec for a 1 μm device. Additionally, we found nearly no gate lag in the devices, which is considered a precondition for good performance under large signal operation.

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Dominant Spin Relaxation Mechanism In Compound Organic Semiconductors, Supriyo Bandyopadhyay Jan 2010

Dominant Spin Relaxation Mechanism In Compound Organic Semiconductors, Supriyo Bandyopadhyay

Electrical and Computer Engineering Publications

Despite the recent interest in “organic spintronics,” the dominant spin relaxation mechanism of electrons or holes in an organic compound semiconductor has not been conclusively identified. There have been sporadic suggestions that it might be hyperfine interaction caused by background nuclear spins, but no confirmatory evidence to support this has ever been presented. Here, we report the electric-field dependence of the spin-diffusion length in an organic spin-valve structure consisting of an Alq3 spacer layer, and argue that these data, as well as the available data on the temperature dependence of this length, contradict the notion that hyperfine interactions relax spin. …

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Electrically And Magnetically Tunable Phase Shifters Based On A Barium Strontium Titanate-Yttrium Iron Garnet Layered Structure, J. H. Leach, H. Liu, V. Avrutin, E. Rowe, Ü. Özgür, H. Morkoç, Y.-Y. Song, M. Wu Jan 2010

Electrically And Magnetically Tunable Phase Shifters Based On A Barium Strontium Titanate-Yttrium Iron Garnet Layered Structure, J. H. Leach, H. Liu, V. Avrutin, E. Rowe, Ü. Özgür, H. Morkoç, Y.-Y. Song, M. Wu

Electrical and Computer Engineering Publications

We report on the tuning of permittivity and permeability of a ferroelectric/ferromagnetic bilayer structure which can be used as a microwavephase shifter with two degrees of tuning freedom. The structure was prepared by the growth of a yttrium iron garnet (YIG) layer on a gadolinium gallium garnet substrate by liquid phase epitaxy, the growth of a barium strontium titanate (BST) layer on the YIG layer through pulsed laser deposition, and then the fabrication of a coplanar waveguide on the top of BST through e-beam evaporation and trilayer liftoff techniques. The phase shifters exhibit a differential phase shift of 38°/cm at …

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Large Dielectric Tuning And Microwave Phase Shift At Low Electric Field In Epitaxial Ba0.5sr0.5tio3 On Srtio3, J. H. Leach, H. Liu, V. Avrutin, B. Xiao, Ü. Özgür, H. Morkoç, J. Das, Y. Y. Song, C. E. Patton Jan 2010

Large Dielectric Tuning And Microwave Phase Shift At Low Electric Field In Epitaxial Ba0.5sr0.5tio3 On Srtio3, J. H. Leach, H. Liu, V. Avrutin, B. Xiao, Ü. Özgür, H. Morkoç, J. Das, Y. Y. Song, C. E. Patton

Electrical and Computer Engineering Publications

Dielectric properties of annealed and as-grown ferroelectricBa0.5Sr0.5TiO3 (BST) grown by pulsed laser deposition on sputtered BST seed layers on strontium titanate (STO) substrates were investigated at microwave frequencies in the realm of tunability of its dielectric constant as well as phase shifters based on this material. The as-grown layers were nearly fully relaxed with measured lattice parameters nearly identical to those of bulk BST. The tuning of the relative dielectric constant (∼1750 at zero bias at 10 GHz) of the annealed BST was found to be as high as 59% and 56% at 10 and 19 GHz, respectively. The analysis …

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Bias Dependent Two-Channel Conduction In Inaln/Aln/Gan Structures, J. H. Leach, X. Ni, X. Li, M. Wu, Ü. Özgür, H. Morkoç, L. Zhou, D. A. Cullen, D. J. Smith, H. Cheng, Ç. Kurdak, J. R. Meyer, I. Vurgaftman Jan 2010

Bias Dependent Two-Channel Conduction In Inaln/Aln/Gan Structures, J. H. Leach, X. Ni, X. Li, M. Wu, Ü. Özgür, H. Morkoç, L. Zhou, D. A. Cullen, D. J. Smith, H. Cheng, Ç. Kurdak, J. R. Meyer, I. Vurgaftman

Electrical and Computer Engineering Publications

Due to growth temperature differences during deposition of GaN heterostructures utilizing InAlN barriers, an inadvertent parasitic GaN layer can form in the InAlN barrier layer. In structures utilizing AlN spacer layers, this parasitic layer acts as a second conduction channel with a carrier density dependent upon polarization charges and lattice strain as well as the surface potential. The effect of an additional GaN spacer layer in InAlN/AlN/GaN structures is assessed using simulations, electron-microscopy observations, magnetoconductivity measurements with gated Hall bar samples, and with quantitative mobility spectrum analysis. We propose a possible formation mechanism for the parasitic layer, and note that …

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Ti/Al/Ni/Au Ohmic Contacts For Alinn/Aln/Gan-Based Heterojunction Field-Effect Transistors, Lin Zhou, Jacob H. Leach, Xianfeng Ni, Hadis Morkoç, David J. Smith Jan 2010

Ti/Al/Ni/Au Ohmic Contacts For Alinn/Aln/Gan-Based Heterojunction Field-Effect Transistors, Lin Zhou, Jacob H. Leach, Xianfeng Ni, Hadis Morkoç, David J. Smith

Electrical and Computer Engineering Publications

The microstructure of AuNiAlTi/Al0.84In0.16N/AlN/GaNOhmic contacts annealed from 700 to 900 °C has been determined using transmission electron microscopy and associated analytical techniques. Intermixing and phase separation of the metal contact layers was observed to degrade the surface roughness. An optimal contact performance was obtained for contacts annealed at 800 °C and was attributed to the formation of TiN contact inclusions that had penetrated through the AlInN layers into the GaN layers underneath. These TiN contact inclusions had an inverted mushroom shape with a density of ∼108 cm−2, and they were invariably located at the positions of mixed-type threading dislocations. These …

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Hot Electron Effects On Efficiency Degradation In Ingan Light Emitting Diodes And Designs To Mitigate Them, X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis Jan 2010

Hot Electron Effects On Efficiency Degradation In Ingan Light Emitting Diodes And Designs To Mitigate Them, X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis

Electrical and Computer Engineering Publications

Hot electrons and the associated ballistic and quasiballistic transport, heretofore neglected endemically, across the active regions of InGaN light emitting diodes (LEDs) have been incorporated into a first order simple model which explains the experimental observations of electron spillover and the efficiency degradation at high injection levels. The model is in good agreement with experiments wherein an adjustable barrier hot electron stopper, commonly called the electron blocking layer (EBL), is incorporated. The model is also in agreement with experiments wherein the electrons are cooled, eliminating hot electrons, inside a staircase electron injector (SEI) prior to their injection into the active …

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Efficient Implementation Of Raid-6 Encoding And Decoding On A Field Programmable Gate Array (Fpga), David Jacob Dec 2009

Efficient Implementation Of Raid-6 Encoding And Decoding On A Field Programmable Gate Array (Fpga), David Jacob

Theses and Dissertations

RAID-6 is a data encoding scheme used to provide single drive error detection and dual drive error correction for data redundancy on an array of disks. Here we present a thorough study of efficient implementations of RAID-6 on field programmable gate arrays (FPGAs). Since RAID-6 relies heavily on Galois Field Algebra (GFA), an efficient implementation of a GFA FPGA library is also presented. Through rigorous performance analysis, this work shows the most efficient ways to tradeoff FPGA resources and execution time when implementing GFA functions as well as RAID-6 encoding and decoding.

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Gan Heterojunction Fet Device Fabrication, Characterization And Modeling, Qian Fan Nov 2009

Gan Heterojunction Fet Device Fabrication, Characterization And Modeling, Qian Fan

Theses and Dissertations

This dissertation is focused on the research efforts to develop the growth, processing, and modeling technologies for GaN-based Heterojunction Field Effect Transistors (HFETs). The interest in investigating GaN HFETs is motivated by the advantageous material properties of nitride semiconductor such as large band gap, large breakdown voltage, and high saturation velocity, which make it very promising for the high power and microwave applications. Although enormous progress has been made on GaN transistors in the past decades, the technologies for nitride transistors are still not mature, especially concerning the reliability and stability of the device. In order to improve the device …

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Growth, Characterization And Applications Of Multifunctional Ferroelectric Thin Films, Bo Xiao Jun 2009

Growth, Characterization And Applications Of Multifunctional Ferroelectric Thin Films, Bo Xiao

Theses and Dissertations

Ferroelectric materials have been extensively studied theoretically and experimentally for many decades. Their ferroelectric, piezoelectric, pyroelectric, dielectric and electro-optical properties offer great promise in various applications such as non-volatile random access memory devices, non linear optics, motion and thermal sensors, and tunable microwave devices. Advanced applications for high dielectric constant insulators and nonvolatile memories in semiconductor industry have led to a meteoric rise of interest in the ferroelectrics recently. As most studied and technically important ferroelectric materials, lead zirconate titanate (PZT) and barium strontium titanate (BST) are widely investigated to understand their properties for potential device applications. Using radio frequency …

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Fabrication And Device Applications Of Self Assembled Nanostructures, Bhargava Ram Kanchibotla V May 2009

Fabrication And Device Applications Of Self Assembled Nanostructures, Bhargava Ram Kanchibotla V

Theses and Dissertations

The spin dynamics of electrons in inorganic and organic semiconducting nanostructures has become an area of interest in recent years. The controlled manipulation of an electron’s spin, and in particular its phase, is the primary requirement for applications in quantum information processing. The phase decoheres in a time known as the transverse relaxation time or T2 time. We have carried out a measurement of the ensemble-averaged transverse spin relaxation time (T2*) in bulk and few molecules of the organic semiconductor tris-(8-hydroxyquinolinolato aluminum) or Alq3. The Alq3 system exhibits two characteristic T2* times: the longer of which is temperature independent and …

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Optical And Electrical Properties Of Compound And Transition Metal Doped Compound Semiconductor Nanowires, Sivakumar Ramanathan Feb 2009

Optical And Electrical Properties Of Compound And Transition Metal Doped Compound Semiconductor Nanowires, Sivakumar Ramanathan

Theses and Dissertations

Nanotechnology is the science and engineering of creating functional materials by precise control of matter at nanometer (nm) length scale and exploring novel properties at that scale. It is vital to understand the quantum mechanical phenomena manifested at nanometer scale dimensions since that will enable us to precisely engineer quantum mechanical properties to realize novel device functionalities. This dissertation investigates optical and electronic properties of compound and transition metal doped compound semiconductor nanowires with a view to exploiting them for a wide range of applications in semiconductor electronic and optical devices. In this dissertation work, basic concepts of optical and …

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Degradation In Inaln/Gan-Based Heterostructure Field Effect Transistors: Role Of Hot Phonons, J. H. Leach, C. Y. Zhu, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, Hadis Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, H. Cheng, Ç. Kurdak Jan 2009

Degradation In Inaln/Gan-Based Heterostructure Field Effect Transistors: Role Of Hot Phonons, J. H. Leach, C. Y. Zhu, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, Hadis Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, H. Cheng, Ç. Kurdak

Electrical and Computer Engineering Publications

We report on high electric field stress measurements at room temperature on InAlN/AlN/GaN heterostructure field effect transistor structures. The degradation rate as a function of the average electron density in the GaN channel (as determined by gated Hall bar measurements for the particular gate biases used), has a minimum for electron densities around 1×1013 cm−2, and tends to follow the hot phonon lifetime dependence on electron density. The observations are consistent with the buildup of hot longitudinal optical phonons and their ultrafast decay at about the same electron density in the GaN channel. In part because they have negligible group …

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On Carrier Spillover In C- And M-Plane Ingan Light Emitting Diodes, J. Lee, X. Li, X. Ni, Ü. Özgür, Hadis Morkoç, T. Paskova, G. Mulholland, K. R. Evans Jan 2009

On Carrier Spillover In C- And M-Plane Ingan Light Emitting Diodes, J. Lee, X. Li, X. Ni, Ü. Özgür, Hadis Morkoç, T. Paskova, G. Mulholland, K. R. Evans

Electrical and Computer Engineering Publications

The internal quantum efficiency(IQE) and relative external quantum efficiency (EQE) in InGaNlight-emitting diodes(LEDs) emitting at 400 nm with and without electron blocking layers (EBLs) on c-plane GaN and m-plane GaN were investigated in order to shed some light on any effect of polarizationcharge induced field on efficiency killer carrier spillover. Without an EBL the EQE values suffered considerably (by 80%) for both orientations, which is clearly attributable to carrier spillover. Substantial carrier spillover in both polarities, therefore, suggests that the polarizationcharge is not the major factor in efficiency degradation observed, particularly at high injection levels. Furthermore, the m-plane variety with …

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Epitaxial Growth Of (001)-Oriented Ba0.5sr0.5tio3 Thin Films On A-Plane Sapphire With An Mgo/Zno Bridge Layer, Bo Xiao, Hongrui Liu, Vitaliy Avrutin, Jacob H. Leach, Emmanuel Rowe, Huiyong Liu, Ü. Özgür, Hadis Morkoç, W. Chang, L.M. B. Allredge, S. W. Kirchoefer, J. M. Pond Jan 2009

Epitaxial Growth Of (001)-Oriented Ba0.5sr0.5tio3 Thin Films On A-Plane Sapphire With An Mgo/Zno Bridge Layer, Bo Xiao, Hongrui Liu, Vitaliy Avrutin, Jacob H. Leach, Emmanuel Rowe, Huiyong Liu, Ü. Özgür, Hadis Morkoç, W. Chang, L.M. B. Allredge, S. W. Kirchoefer, J. M. Pond

Electrical and Computer Engineering Publications

High quality (001)-oriented Ba0.5Sr0.5TiO3 (BST) thin films have been grown on a-plane sapphire(112¯0) by rf magnetron sputtering using a double bridge layer consisting of (0001)-oriented ZnO (50 nm) and (001)-oriented MgO (10 nm) prepared by plasma-assisted molecular beam epitaxy. X-ray diffraction revealed the formation of three sets of in-plane BST domains, offset from one another by 30°, which is consistent with the in-plane symmetry of the MgO layer observed by in situ reflective high electron energy diffraction. The in-plane epitaxial relationship of BST, MgO, and ZnO has been determined to be BST [110]//MgO [110]//ZnO [112¯0] and BST [110]/MgO [110]//ZnO [11¯00]. …

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Plasmon-Enhanced Heat Dissipation In Gan-Based Two-Dimensional Channels, A. Matulionis, J. Liberis, I. Matulioniene, M. Ramonas, E. Šermukšnis, J. H. Leach, M. Wu, X. Ni, X. Li, Hadis Morkoç Jan 2009

Plasmon-Enhanced Heat Dissipation In Gan-Based Two-Dimensional Channels, A. Matulionis, J. Liberis, I. Matulioniene, M. Ramonas, E. Šermukšnis, J. H. Leach, M. Wu, X. Ni, X. Li, Hadis Morkoç

Electrical and Computer Engineering Publications

Decay of nonequilibrium longitudinal optical (LO) phonons is investigated at room temperature in two-dimensional electron gas channels confined in nearly lattice-matched InAlN/AlN/GaN structures. A nonmonotonous dependence of the LO-phonon lifetime on the supplied electric power is reported for the first time and explained in terms of plasmon–LO-phonon resonance tuned by applied bias at a fixed sheet density (8×1012 cm−2). The shortest lifetime of 30±15 fs is found at the power of 20±10 nW/electron.

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Nonpolar M-Plane Gan On Patterned Si(112) Substrates By Metalorganic Chemical Vapor Deposition, X. Ni, M. Wu, J. Lee, X. Li, A. A. Baski, Ü. Özgür, Hadis Morkoç Jan 2009

Nonpolar M-Plane Gan On Patterned Si(112) Substrates By Metalorganic Chemical Vapor Deposition, X. Ni, M. Wu, J. Lee, X. Li, A. A. Baski, Ü. Özgür, Hadis Morkoç

Electrical and Computer Engineering Publications

The concept of nonpolar (11¯00) m-plane GaN on Si substrates has been demonstrated by initiating growth on the vertical (1¯1¯1) sidewalls of patterned Si(112) substrates using metalorganic chemical vapor deposition. The Si(112) substrates were wet-etched to expose {111} planes using stripe-patterned SiNx masks oriented along the [1¯10] direction. Only the vertical Si(1¯1¯1) sidewalls were allowed to participate in GaNgrowth by masking other Si{111} planes using SiO2, which led to m-plane GaNfilms.Growth initiating on the Si(1¯1¯1) planes normal to the surface was allowed to advance laterally and also vertically toward full coalescence. InGaN double heterostructure active layers grown on these m-GaN …

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