Electrical and Computer Engineering Commons^™

Losses In Electric Power Systems, E. Benedict, T. Collins, D. Gotham, S. Hoffman, D. Karipides, S. Pekarek, R. Ramabhadran

Department of Electrical and Computer Engineering Technical Reports

This report concerns losses in power systems. The report was assembled by seven authors in EE 532 class at Purdue University in December, 1992. The work was part of a class project on losses . All aspects of losses are discussed from the transmission system through utilization stages. High efficiency motors and lighting are also considered . The students participating in this project also videotaped presentations on power system losses .

Implementation Of Back-Propagation Neural Networks With Matlab, Jamshid Nazari, Okan K. Ersoy

Department of Electrical and Computer Engineering Technical Reports

The artificial neural network back propagation algorithm is implemented in Matlab language. This implementation is compared with several other software packages. The effect of reducing the number of iterations in the performance of the algorithm iai studied. The speed of the back propagation program, mkckpmp, written in Matlab language is compared with the speed of several other back propagation programs which are written in the C language. The speed of the Matlab program mbackpmp is, also compared with the C program quickpmp which is a variant of the back propagation algorithm. It is shown that the Matlab program mbackpmp is …

A Study Of Numerical Integration Techniques For Use In The Companion Circult Method Of Transient Circuit Analysis, Charles A. Thompson

Department of Electrical and Computer Engineering Technical Reports

Circuit transient analysis packages such as SPICE and EMTP are very widely used, but detailed information on the internal structure and error characteristics for these software packages is lacking. Both SPICE and EMTP rely on numerical integration to approximate the transient response of circuit elements. The numerical integration methods used in the packages are not necessarily the most accurate approximations to the actual response of a circuit. The study of these numerical integration methods and their error characteristics is the focus of this thesis. Comparisons are made between several methods in terms of accuracy and stability as well as algorithm …

Three-Dimensional Insulated Gate Bipolar Transistor (Igbt) Development, P.V. Gilbert, G.W. Neudeck

Department of Electrical and Computer Engineering Technical Reports

A new insulated gate bipolar transistor structure, the 3D-IGBT, is presented. The 3D-IGBT utilizes selective epitaxial silicon to form a top contacted anode and still retain the cellular structure of vemcally oriented devices. The 3D-IGBT , unlike other fully integrable power devices, exploits the merits of cellular structure to increase its packing density and thus reduce its on-resistance per unit area. It also eliminates the parasitic JFET resistance found in vertical IGBT's. To integrate the 3D-IGBT with low power devices, the QDI method of device isolation is also presented. QDI uses a combination of JI and DI to electrically isolate …

Self‐Consistent Scattering Matrix Calculation Of The Distribution Function In Semiconductor Devices, Mark A. Stettler, Mark S. Lundstrom

Department of Electrical and Computer Engineering Faculty Publications

The scattering matrix approach is a new technique for solving the Boltzmann equation in devices. We report a self-consistent application of the technique to realistic silicon devices exhibiting strong nonlocal effects. Simulation of a hot-electron, n-i-n diode demonstrates that the new technique efficiently and accurately reproduces Monte Carlo results without the statistical noise, allowing much tighter convergence with Poisson’s equation.

Minority Hole Mobility In N+ Gaas, Michael L. Lovejoy, Michael R. Melloch, Mark S. Lundstrom, R. K. Ahrenkiel

Department of Electrical and Computer Engineering Faculty Publications

The minority hole diffusivity, or equivalently the hole mobility, was measured in n⁺GaAs with the zero‐field time‐of‐flight technique. The minority hole mobility was measured for the donor doping range of 1.3×10¹⁷ cm⁻³ to 1.8×1018 cm⁻³ and was found to vary from 235 to 295 cm²/V s. At the lower doping level, the minority hole mobility is comparable to the corresponding majority hole mobility, but at 1.8×10¹⁸ cm⁻³ the minority hole mobility was 30% higher than the majority carrier hole mobility. These results have important implications for the design of devices such …

Microsecond Lifetimes And Low Interface Recombination Velocities In Moderately Doped N-Gaas Thin Films, Gregory Benedict Lush, D. H. Levi, H. F. Macmillan, Michael R. Melloch, Mark S. Lundstrom, R. K. Ahrenkiel

Department of Electrical and Computer Engineering Faculty Publications

We have observed lifetimes greater than 1 ps in moderately doped, thin film, n-GaAs/A1a,Gae,As double heterostructure membranes formed by etching away the substrate. We attribute these ultralong lifetimes to enhanced photon recycling caused by the removal of the substrate. Nonradiative recombination in the bulk and at the interfaces is very low; the upper limit of the interface recombination velocity is 25 cm/S.-Such long lifetimes in GaAs doped at N,= 1.3 X 10” cme3 suggest that thin-film solar cells offer a potential option for achieving very high efficiencies.

Comparative Study Of Minority Electron Properties In P+-Gaas Doped With Beryllium And Carbon, Michael L. Lovejoy, Michael R. Melloch, Mark S. Lundstrom, R. K. Ahrenkiel, B. M. Keyes, T. J. De Lyon, J. M. Woodall

Department of Electrical and Computer Engineering Faculty Publications

Minority electron properties in p+‐GaAs doped with beryllium (Be) and with carbon (C) are reported. Measurements of essentially identical responses for structures differing only in dopant element demonstrate that the diffusivity (Dn) and the diffusion lengths (Ln) are the same in p+‐GaAs doped to ∼1019 cm−3 with Be‐ and C‐dopants. Zero‐field time‐of‐flight analysis yields Dn=35 cm2/s and internal quantum efficiency analysis yields Ln=2.4 μm, which implies a lifetime that is approximately at the estimated radiative limit. In addition, the majority Hall mobility was also found to be identical …

Minority Electron Transport In Inp/Ingaas Heterojunction Bipolar Transistors, Paul Dodd, Mark S. Lundstrom

Department of Electrical and Computer Engineering Faculty Publications

Electron transport across the base of InP/InGaAs heterojunction bipolar transistors is examined by Monte Carlo simulation. The base transit times and electron distribution functions are examined as a function of basewidth. Clear ballistic behavior is observed only for extremely thin bases (much less than 100 A). Over the range of basewidths of interest for devices, base transport appears diffusive, but the electrons are very far from thermal equilibrium. The diffusive behavior is shown to arise from the sensitivity of the steady-state carrier population to small amounts of large-angle scattering.

A Study Of Minority Carrier Lifetime Versus Doping Concentration In N‐Type Gaas Grown By Metalorganic Chemical Vapor Deposition, Gregory Benedict Lush, H. F. Macmillan, B. M. Keyes, D. H. Levi, Michael R. Melloch, R. K. Ahrenkiel, Mark S. Lundstrom

Department of Electrical and Computer Engineering Faculty Publications

Time‐resolved photoluminescence decay measurements are used to explore minority carrier recombination in n‐type GaAs grown by metalorganic chemical vapor deposition, and doped with selenium to produce electron concentrations from 1.3×10¹⁷ cm⁻³ to 3.8×10¹⁸ cm⁻³. For electron densities n₀<10¹⁸ cm⁻³, the lifetime is found to be controlled by radiative recombination and photon recycling with no evidence of Shockley–Read–Hall recombination. For higher electron densities, samples show evidence of Shockley–Read–Hall recombination as reflected in the intensity dependence of the photoluminescence decay. Still, we find that radiative recombination and photon recycling are important for …

Experimental Determination Of The Effects Of Degenerate Fermi Statistics On Heavily P‐Doped Gaas, E. S. Harmon, Michael R. Melloch, Mark S. Lundstrom, Michael L. Lovejoy

Department of Electrical and Computer Engineering Faculty Publications

The effects of degenerate Fermi statistics on electron injection currents for p+‐GaAs grown by molecular beam epitaxy are presented. To achieve Be dopant concentrations of greater than 8×10¹⁹ cm⁻³, the substrate temperature during growth was reduced to approximately 450 °C from the usual 600 °C. In this heavily doped material, we measure unexpectedly large electron injectioncurrents which are interpreted in terms of an effective narrowing of the band gap. At extremely heavy doping densities, the Fermi level pushes into the valence band and degenerate Fermi statistics must be taken into account. For doping concentrations greater than …

Zero-Field Time-Of-Flight Measurements Of Electron Diffusion In P+-Gaas, Michael L. Lovejoy, B. M. Keyes, M. E. Klausmeier-Brown, Michael R. Melloch, R. K. Ahrenkiel, Mark S. Lundstrom

Department of Electrical and Computer Engineering Faculty Publications

Minority electron diffusivities in p+-GaAs-doped NA =~1.4×10¹⁸ and ~10¹⁹ cm^-3 have been measured in zero-field conditions with an extension of the zero-field time-of-flight technique. Extension of the technique to make it applicable to heavily doped p+-GaAs is described and zero-field data are discussed. Unexpectedly, majority carrier drag effects are not evident in a comparison of this data with recently reported high-field data. Low zero-field mobility of electrons in p+-GaAs has important implications for high-speed devices such as heterojunction bipolar transistors.

Transistor-Based Studies Of Heavy Dop-Ing Effects In N-Gaas, M. P. Patkar, Mark S. Lundstrom, Michael R. Melloch

Department of Electrical and Computer Engineering Faculty Publications

The n2ieDp product (where n2ie is the np product and Dp is the minority hole mobility) in heavily doped n‐GaAs has been measured by electrical characterization of p‐n‐p GaAs homojunction transistors with base dopings ranging from approximately 1×1017 to 9×1018 cm−3. The measured n2ieDp product decreases as the doping density increases. These results suggest that nie is roughly constant with doping density, in sharp contrast to the large increase observed for p‐type GaAs. This work shows that when designing GaAs bipolar devices, …

Transistor-Based Measurements Of Electron Injection Currents In P-Type Gaas Doped 1018–1020 Cm-3, M. E. Klausmeier-Brown, M. R. Melloch, Mark S. Lundstrom

Department of Electrical and Computer Engineering Faculty Publications

Measurements of electron currents injected into p+‐GaAs are presented for molecular beam epitaxially grown material doped from 2×1018 to 8×1019 cm−3 with Be. The collector current versus base‐emitter voltage characteristics of n‐p+‐n GaAs homojunction bipolar transistors are analyzed, and the results are interpreted in terms of the quantity (n0Dn), where n0 is the equilibrium minority‐carrier concentration and Dn is the minority‐carrier diffusion coefficient. The results are consistent with earlier measurements of (n0Dn) made using metalorganic chemical vapor deposited p+‐n GaAs solar …

High‐Efficiency Al0.22ga0.78as Solar Cells Grown By Molecular Beam Epitaxy, Michael R. Melloch, S. P. Tobin, C. Bajgar, A. Keshavarzi, T. B. Stellwag, G. B. Lush, Mark S. Lundstrom, K. Emery

Department of Electrical and Computer Engineering Faculty Publications

The quality of pn junction photodetectors made of Al0.2Ga0.8As has been investigated as a first step in the optimization of tandem solar cells. We have obtained 1 sun AM1.5 efficiencies of 16.1% for 0.25 cm2 Al0.22Ga0.78As solar cellsfabricated from molecular beam epitaxy (MBE) material. This efficiency is 3.2 percentage points higher than the previously best reported efficiency of 12.9% for an Al0.2Ga0.8As solar cell fabricated from MBE material.

Surface Passivation Effects Of As2s3 Glass On Self‐Aligned Algaas/Gaas Heterojunction Bipolar Transistors, H. L. Chuang, M. S. Carpenter, Michael R. Melloch, Mark S. Lundstrom, E. Yablonovitch, T. J. Gmitter

Department of Electrical and Computer Engineering Faculty Publications

A recently developed As₂S₃ chemical treatment was used to passivate the perimeters of self‐aligned heterojunction bipolar transistors (HBTs). The As₂S₃chemical treatment significantly lowered the base current resulting in a two order of magnitude reduction in the collector current density at which dc current gain was observed (β=1). No degradation with time has been observed in the electrical characteristics of the chemically treated HBTs. This absence of degradation is attributed to the impermeability to oxygen of the As2S3 glass which coats the perimeter of the HBT after chemical treatment.

Orientation-Dependent Perimeter Recombination In Gaas Diodes, T. B. Stellwag, Michael R. Melloch, Mark S. Lundstrom, M. S. Carpenter, R. F. Pierret

Department of Electrical and Computer Engineering Faculty Publications

Perimeter recombination currents affect the performance of GaAs-based devices such as solar cells, heterojunction bipolar transistors, and injection lasers. We report that the n SEf 2 perimeter recombination current has a strong orientation dependence. More than a factor of five variation in the surface recombination current at mesa-etched edges has been observed. These results suggest that with proper device design, perimeter recombination currents could be substantially reduced.

Consequences Of Valley Filtering On Abrupt Junction Algaas/Gaas Heterojunction Bipolar Transistors, Amitava Das, Mark S. Lundstrom

Department of Electrical and Computer Engineering Faculty Publications

Electron transport in AlGaAs/GaAs heterojunction bipolar transistors with compositionally abrupt emitter‐base junctions is examined. Transport across the abrupt emitter‐base heterojunction is treated quantum mechanically, and the Monte Carlo technique is used to study transport through the base. Although there is a sizeable population of upper‐valley electrons in the bulk emitter, the AlGaAs/GaAs heterojunction is found to favor the injection of Γ‐valley electrons into the base. This valley filtering effect enhances device performance by reducing base transit time, but quantum mechanical tunneling lowers the average energy of the injected flux which increases base transit time. The design of a heterojunction bipolar …

Effective Minority‐Carrier Hole Confinement Of Si‐Doped, N+‐N Gaas Homojunction Barriers, H. L. Chuang, M. E. Klausmeier-Brown, Michael R. Melloch, Mark S. Lundstrom

Department of Electrical and Computer Engineering Faculty Publications

he electrical performance of Si‐doped n+‐n GaAs homojunction barriers grown by molecular‐beam epitaxy (MBE) is characterized and analyzed. We employed a successive etch technique to study hole injection currents in GaAs n+‐n‐p+ solar cells. The results of the analysis show that minority‐carrier holes in our MBE‐grown material have a mobility of 293 cm2/V s for an n‐type Si‐doping level of 1.5×1016 cm−3 at 300 K. The interface recombination velocity for these homojunction barriers is estimated to be less than 1×103 cm/s, and it appears to be comparable to that recently observed for …

Evidence For Band-Gap Narrowing Effects In Be-Doped, P-P+ Gaas Homojunction Barriers, H. L. Chuang, Paul David Demoulin, M. E. Klausmeier-Brown, Michael R. Melloch, Mark S. Lundstrom

Department of Electrical and Computer Engineering Faculty Publications

The electrical performance of Be‐doped, p‐p+ GaAs homojunction barriers is characterized and analyzed. The results of the analysis show that minority‐carrier electrons, at 300 K, have a mobility of 4760 cm2/V s at a hole concentration of 2.3×1016 cm−3, and that the effective recombination velocity for these homojunction barriers is about 6×104 cm/s. We present evidence that this unexpectedly high recombination velocity is a consequence of an effective reduction in band gap due to the heavy impurity doping. The effective band‐gap shrinkage in this Be‐doped material grown by molecular‐beam epitaxy appears to be comparable to that already …

Effects Of Heavy Impurity Doping On Electron Injection In P+-N Gaas Diodes, M. E. Klausmeier-Brown, Mark S. Lundstrom, Michael R. Melloch, S. P. Tobin

Department of Electrical and Computer Engineering Faculty Publications

Measurements of electron injection currents in p+‐n diodes are presented for a range of p‐type dopant concentrations. A successive etch technique was used to characterize the electron injection current in terms of the product (noDn). Measurements are presented for Zn‐doped GaAs solar cells with p‐layer hole concentrations in the range 6.3×1017−1.3×1019 cm−3. The results demonstrate that so‐called band‐gap narrowing effects substantially increase the injected electron current in heavily doped p‐type GaAs. These heavy doping effects must be accounted for in the modeling and design of GaAs solar cells and heterostructure …

Bias‐Dependent Photoresponse Of P+In Gaas/Alas/Gaas Diodes, Michael R. Melloch, C. P. Mcmahon, Mark S. Lundstrom, J. A. Cooper Jr., Q D. Qian, S. Bandyopadhyay

Department of Electrical and Computer Engineering Faculty Publications

We report photocollection efficiency measurements of p + in GaAs! AIAs!GaAs diodes fabricated on films grown by molecular beam epitaxy, Both the zero-bias and bias-dependent photocollection characteristics can be explained by assuming that the band discontinuity between AlAs and GaAs is mostly accommodated i.n the valence band.

Importance Of Space-Charge Effects In Resonant Tunneling Devices, M. Cahay, M. Mclennan, D. Datta, Mark S. Lundstrom

Department of Electrical and Computer Engineering Faculty Publications

The consideration of space charge in the analysis of resonant tunneling devices leads to a substantial modification of the current-voltage relationship. The region of negative differential resistance (NDR) is shifted to a higher voltage, and broadened along the voltage axis. Moreover, the peak value of current prior to NDR is reduced, leading to a reduction in the predicted peak-to-valley ratio. An approach is presented to include space-charge effects, and a recently fabricated GaAs-Alx Gal _ x As structure is analyzed, to underscore the importance of a self-consistent electrostatic potential in theoretical calculations.

Recombination-Current Suppression In Gaas P-N Junctions Grown On Algaas Buffer Layers By Molecular-Beam Epitaxy, D. P. Rancour, M. R. Melloch, R. F. Pierret, Mark S. Lundstrom, M. E. Klausmeier-Brown, C. S. Kyono

Department of Electrical and Computer Engineering Faculty Publications

n+pp+GaAs and n+pP+ GaAs/GaAs/Al0.3Ga0.7As mesa diodes have been fabricated from films grown by molecular‐beam epitaxy. The diodes made from films employing an AlGaAs buffer layer show marked improvements (a factor of 5 reduction) in recombination current densities. Deep level transient spectroscopy measurements moreover indicate that deep level concentrations are reduced by the AlGaAs buffer.

Proposed Structure For Large Quantum Interference Effects, S. Datta, Michael R. Melloch, S. Bandyopadhyay, Mark S. Lundstrom

Department of Electrical and Computer Engineering Faculty Publications

In this letter we propose and analyze a new semiconductor structure that can be fabricated by present day technology and can lead to large quantum interference effects with potential device applications.

Effect Of Impurity Trapping On The Capacitance‐Voltage Characteristics Of N‐Gaas/N‐Algaas Heterojunctions, K. L. Tan, Mark S. Lundstrom, Michael R. Melloch

Department of Electrical and Computer Engineering Faculty Publications

We have studied the capacitance-voltage (C- V) characteristics of Schottky barriers on inverted nGaAs/ N-AIGaAs and normal N-AIGaAs/n-GaAs heterojunctions. Impurities introduced during film growth produced a negative sheet charge of 6.0 X 10 II cm -2 at the interface of the inverted n-GaAs/N-AIGaAs heterojunction. The effectiveness of GaAs quantum wells in trapping these impurities was investigated. GaAs quantum wells 20 A wide were placed in intervals of 2500 A for the first 0.75 pm of the AIGaAs layer; in the last 0.25 pm, the periodicity of the quantum wells was progressively decreased by half with the last quantum well placed …

Magnetoelastic Rayleigh Wave Convolver, William P. Robbins, Mark S. Lundstrom

Department of Electrical and Computer Engineering Faculty Publications

An epoxy-bonded LiNb03-YIG-LiNb03 composite structure has been constructed and operated as a magnetoelastic Rayleigh wave convolver with 50-MHz input signals. The acoustic signals were propagated on a (110) YIG surface and the convolution characteristics were studied as a function of the magnitude and direction of the applied magnetic field. Nonuniform demagnetizing fields limited convolution pulses to less than 1.5 /-Lsec duration. Relatively efficient operation was observed corresponding to an internal efficiency F int of -53 dBm

Minimum Distance Classification In Remote Sensing, A. G. Wacker, D. A. Landgrebe

LARS Technical Reports

The utilization of minimum distance classification methods in remote sensing problems, such as crop species identification, is considered. Minimum distance classifiers belong to a family of classifiers referred to as sample classifiers. In such classifiers the items that are classified are groups of measurement vectors (e.g. all measurement vectors from an agricultural field), rather than individual vectors as in more conventional vector classifiers.

Specifically in minimum distance classification a sample (i.e. group of vectors) is classified into the class whose known or estimated distribution most closely resembles the estimated distribution of the sample to be classified. The measure of resemblance …