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2010

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Articles 3541 - 3570 of 5375

Full-Text Articles in Engineering

Evaluation And Comparison Of Mac Protocols In Wireless Sensor Networks, Sharmila Kollipara Jan 2010

Evaluation And Comparison Of Mac Protocols In Wireless Sensor Networks, Sharmila Kollipara

ETD Archive

Wireless sensor network applications call for different kinds of network protocols at different levels of the network stack based on application requirements. A number of medium access control (MAC) protocols have been proposed in the literature. Evaluation of most of these MAC protocols have typically been based on simulation, and while such simulation provides interesting insight into the behavior of these protocols, artifacts caused by behavior of hardware is ignored. Further more, MAC protocols are usually evaluated by comparing the new protocol with others based on one or two metrics, the ones that determined the design decisions for the protocol …

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A Risk-Based Approach For Examining Vertical Separation Distances In On-Site Wastewater Treatment Sytems, Anthony M. Janicek Jan 2010

A Risk-Based Approach For Examining Vertical Separation Distances In On-Site Wastewater Treatment Sytems, Anthony M. Janicek

ETD Archive

Regulations regarding the use of on-site wastewater treatment systems in many states lack a sufficient scientific basis, which in many cases restricts the use of on-site systems, drives up cost, and restricts innovation of new treatment technologies. Of particular regulatory concern is the minimum vertical separation distance (VSD) located in the area between the trench bottom of the subsurface soil absorption system and any restricting or limiting layer. The minimum VSD needed for proper effluent treatment is based on many complex and interrelated factors regarding physical, chemical, and biological soil conditions at a particular site. Research has shown that depending …

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Value Stream Mapping Of Information Flow In Infrastructure Projects, Venkata Ramana Ramana Ari Jan 2010

Value Stream Mapping Of Information Flow In Infrastructure Projects, Venkata Ramana Ramana Ari

ETD Archive

Value Stream Mapping (VSM) is a tool for depicting the flow of material in a manufacturing process. This study demonstrates that value stream mapping can also be applied to the movement and processing of information in a non-manufacturing environment. Here, the handling of, and changes to, water project construction plans within the Cleveland Division of Water (DOW) are tracked using value stream mapping. The map identifies opportunities for the Division of Water to streamline its processes and ensure that accurate information about project construction reaches its primary database in a timely fashion. Currently it takes about 19.1 weeks from the …

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Implementation And Evaluation Of A Tdma Based Protocol For Wireless Sensor Networks, Robert M. Fiske Jan 2010

Implementation And Evaluation Of A Tdma Based Protocol For Wireless Sensor Networks, Robert M. Fiske

ETD Archive

When evaluating MAC layer network protocols for wireless sensor networks performing simulations of a protocol's operation can provide great insight into the performance of the protocol. In order to prove that a protocol will work in a real setting and not just at the theoretical level, however, there is no substitute for evaluation with a physical implementation. This thesis discusses a physical implementation and evaluation of the Many-to-One-Sensor-to-Sink (MOSS) MAC layer protocol for sink based wireless sensor networks using the MAC Layer Architecture for TinyOS. MOSS is a Time Division Multiple Access (TDMA) based protocol first proposed in an earlier …

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A Light Weight Fault Tolerance Framework For Web Services, Srikanth Dropati Jan 2010

A Light Weight Fault Tolerance Framework For Web Services, Srikanth Dropati

ETD Archive

The increased usage of web services by many of the corporate industries to exchange their critical information over World Wide Web has directly impacted the need for high availability of web services. So in this work of ours we designed and developed a light weight fault tolerance framework for web services, by strictly biding ourselves to the design specifications of web services. We developed our framework by extending the open source implementation of Web services reliable messaging specifications. Our framework provides fault tolerance capability using the replication strategy, and can easily be reverted back to basic point to point reliable …

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Towards An Integrated Approach To Engineering Ethics, Eddie Conlon Jan 2010

Towards An Integrated Approach To Engineering Ethics, Eddie Conlon

Conference papers

There is an increasing diversity in approaches to teaching engineering ethics due to increasing dissatisfaction with the dominant approach which uses case studies focused on moral dilemmas confronting individual engineers. There has been a demand for a greater consideration of the organisational and social context in which engineers work and for a shift in focus from micro ethics issues concerning individuals to macro issues of concern to the engineering profession. Further, there has been a demand that engineers focus on societal decision making about technology and their role in policy development. Drawing on the work of the American sociologist George …

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The Use Of Novel Non-Destructive Methods For Quality Control And Performance Evaluation Of Concrete Structures, Sree Nanukuttan, Niall Holmes, Sudarsan Srininvasan, Lulu Basheer, Muhammed Basheer, John Mccarter, Gerry Starrs Jan 2010

The Use Of Novel Non-Destructive Methods For Quality Control And Performance Evaluation Of Concrete Structures, Sree Nanukuttan, Niall Holmes, Sudarsan Srininvasan, Lulu Basheer, Muhammed Basheer, John Mccarter, Gerry Starrs

Conference papers

Concrete cover provides the first line of defense against the ingress of many deleterious substances into the concrete. Therefore, a measure of its transport properties is vital in assessing its long term performance in a given exposure condition. In new structures the rate of ingress of the deleterious substances could be monitored using array of electrical sensors that are embedded in the cover concrete. For structures that are currently in service, tests can be performed by removing cores from the structure (lab based tests) or by using tests that can be performed on the surface (in situ tests). Results relating …

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Toward Engineering Synthetic Microbial Metabolism, George Howard Mcarthur Iv, Stephen S. Fong Jan 2010

Toward Engineering Synthetic Microbial Metabolism, George Howard Mcarthur Iv, Stephen S. Fong

Chemical and Life Science Engineering Publications

The generation of well-characterized parts and the formulation of biological design principles in synthetic biology are laying the foundation for more complex and advanced microbial metabolic engineering. Improvements in de novo DNA synthesis and codon-optimization alone are already contributing to the manufacturing of pathway enzymes with improved or novel function. Further development of analytical and computer-aided design tools should accelerate the forward engineering of precisely regulated synthetic pathways by providing a standard framework for the predictable design of biological systems from well-characterized parts. In this review we discuss the current state of synthetic biology within a four-stage framework (design, modeling, …

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Two-Subband Conduction In A Gated High Density Inaln/Aln/Gan Heterostructure, H. Cheng, C. Kurdak, J. H. Leach, M. Wu, Hadis Morkoç Jan 2010

Two-Subband Conduction In A Gated High Density Inaln/Aln/Gan Heterostructure, H. Cheng, C. Kurdak, J. H. Leach, M. Wu, Hadis Morkoç

Electrical and Computer Engineering Publications

Magnetotransport measurements on an In0.16Al0.84N/AlN/GaN gated Hall bar sample have been performed at 0.28 K. By the application of a gate voltage we were able to vary the total two-dimensional electron gas density from 1.83×1013 to 2.32×1013 cm−2. Two frequency Shubnikov–de Haas oscillations indicate occupation of two subbands by electrons. The density of electrons in the first and second sublevels are found to increase linearly with gate voltage with a slope of 2.01×1012 cm−2/V and 0.47×1012 cm−2/V, respectively. And the quantum lifetimes for the first and second subbands ranged from 0.55 to 0.95×10−13 s and from 1.2 to 2.1×10−13 s.

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Surface Plasmon Enhanced Uv Emission In Algan/Gan Quantum Well, J. Lin, A. Mohammadizia, A. Neogi, Hadis Morkoç, M. Ohtsu Jan 2010

Surface Plasmon Enhanced Uv Emission In Algan/Gan Quantum Well, J. Lin, A. Mohammadizia, A. Neogi, Hadis Morkoç, M. Ohtsu

Electrical and Computer Engineering Publications

The surface plasmon (SP) energy for resonant enhancement of light has shown to be modified by the epitaxial substrate and the overlying metalthin film. The modification of SP energy in AlGaN/GaN epitaxial layers is studied using spectroscopic ellipsometry for enhanced UV-light emission. Silver induced SP can be extended to the UV wavelength range by increasing the aluminum concentration in AlxGa1−xN epilayer. A threefold increase in the UV-light emission is observed from AlGaN/GaN quantum well due to silver induced SP. Photoluminescence lifetime measurements confirm the resonant plasmon induced increase in Purcell factor as observed from the PL intensity measurements.

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Ingan Staircase Electron Injector For Reduction Of Electron Overflow In Ingan Light Emitting Diodes, X. Ni, X. Li, J. Lee, S. Liu, Vitaliy Avrutin, Ü. Özgür, Hadis Morkoç, A. Matulionis, T. Paskova, G. Mulholland, K. R. Evans Jan 2010

Ingan Staircase Electron Injector For Reduction Of Electron Overflow In Ingan Light Emitting Diodes, X. Ni, X. Li, J. Lee, S. Liu, Vitaliy Avrutin, Ü. Özgür, Hadis Morkoç, A. Matulionis, T. Paskova, G. Mulholland, K. R. Evans

Electrical and Computer Engineering Publications

Ballistic and quasiballistic electron transport across the active InGaN layer are shown to be responsible for electron overflow and electroluminescence efficiency droop at high current levels in InGaN light emitting diodes both experimentally and by first-order calculations. An InGaN staircase electron injector with step-like increased In composition, an “electron cooler,” is proposed for an enhanced thermalization of the injected hot electrons to reduce the overflow and mitigate the efficiency droop. The experimental data show that the staircase electron injector results in essentially the same electroluminescence performance for the diodes with and without an electron blocking layer, confirming substantial …

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Effect Of Hot Phonon Lifetime On Electron Velocity In Inaln/Aln/Gan Heterostructure Field Effect Transistors On Bulk Gan Substrates, J. H. Leach, C. Y. Zhu, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, Hadis Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, T. Paskova, E. Preble, K. R. Evans Jan 2010

Effect Of Hot Phonon Lifetime On Electron Velocity In Inaln/Aln/Gan Heterostructure Field Effect Transistors On Bulk Gan Substrates, J. H. Leach, C. Y. Zhu, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, Hadis Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, T. Paskova, E. Preble, K. R. Evans

Electrical and Computer Engineering Publications

We report on electron velocities deduced from current gain cutoff frequency measurements on GaN heterostructurefield effect transistors(HFETs) with InAlN barriers on Fe-doped semi-insulating bulk GaN substrates. The intrinsic transit time is a strong function of the applied gate bias, and a minimum intrinsic transit time occurs for gate biases corresponding to two-dimensional electron gas densities near 9.3×1012 cm−2. This value correlates with the independently observed density giving the minimum longitudinal optical phonon lifetime. We expect the velocity, which is inversely proportional to the intrinsic transit time, to be limited by scattering with non equilibrium (hot) phonons at the high fields …

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Carrier Velocity In Inaln/Aln/Gan Heterostructure Field Effect Transistors On Fe-Doped Bulk Gan Substrates, J. H. Leach, M. Wu., X. Ni, X. Li, J. Xie, Ü. Özgür, Hadis Morkoç, T. Paskova, E. Preble, K. R. Evans, Chang-Zhi Lu Jan 2010

Carrier Velocity In Inaln/Aln/Gan Heterostructure Field Effect Transistors On Fe-Doped Bulk Gan Substrates, J. H. Leach, M. Wu., X. Ni, X. Li, J. Xie, Ü. Özgür, Hadis Morkoç, T. Paskova, E. Preble, K. R. Evans, Chang-Zhi Lu

Electrical and Computer Engineering Publications

We report microwave characteristics of field effect transistors employing InAlN/AlN/GaN heterostructures grown on low-defect-density bulk Fe-doped GaN substrates. We achieved unity current gain cutoff frequencies of 14.3 and 23.7 GHz for devices with gate lengths of 1 and 0.65 μm, respectively. Measurements as a function of applied bias allow us to estimate the average carrier velocity in the channel to be ∼1.0×107 cm/sec for a 1 μm device. Additionally, we found nearly no gate lag in the devices, which is considered a precondition for good performance under large signal operation.

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Dominant Spin Relaxation Mechanism In Compound Organic Semiconductors, Supriyo Bandyopadhyay Jan 2010

Dominant Spin Relaxation Mechanism In Compound Organic Semiconductors, Supriyo Bandyopadhyay

Electrical and Computer Engineering Publications

Despite the recent interest in “organic spintronics,” the dominant spin relaxation mechanism of electrons or holes in an organic compound semiconductor has not been conclusively identified. There have been sporadic suggestions that it might be hyperfine interaction caused by background nuclear spins, but no confirmatory evidence to support this has ever been presented. Here, we report the electric-field dependence of the spin-diffusion length in an organic spin-valve structure consisting of an Alq3 spacer layer, and argue that these data, as well as the available data on the temperature dependence of this length, contradict the notion that hyperfine interactions relax spin. …

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Electrically And Magnetically Tunable Phase Shifters Based On A Barium Strontium Titanate-Yttrium Iron Garnet Layered Structure, J. H. Leach, H. Liu, V. Avrutin, E. Rowe, Ü. Özgür, H. Morkoç, Y.-Y. Song, M. Wu Jan 2010

Electrically And Magnetically Tunable Phase Shifters Based On A Barium Strontium Titanate-Yttrium Iron Garnet Layered Structure, J. H. Leach, H. Liu, V. Avrutin, E. Rowe, Ü. Özgür, H. Morkoç, Y.-Y. Song, M. Wu

Electrical and Computer Engineering Publications

We report on the tuning of permittivity and permeability of a ferroelectric/ferromagnetic bilayer structure which can be used as a microwavephase shifter with two degrees of tuning freedom. The structure was prepared by the growth of a yttrium iron garnet (YIG) layer on a gadolinium gallium garnet substrate by liquid phase epitaxy, the growth of a barium strontium titanate (BST) layer on the YIG layer through pulsed laser deposition, and then the fabrication of a coplanar waveguide on the top of BST through e-beam evaporation and trilayer liftoff techniques. The phase shifters exhibit a differential phase shift of 38°/cm at …

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Large Dielectric Tuning And Microwave Phase Shift At Low Electric Field In Epitaxial Ba0.5sr0.5tio3 On Srtio3, J. H. Leach, H. Liu, V. Avrutin, B. Xiao, Ü. Özgür, H. Morkoç, J. Das, Y. Y. Song, C. E. Patton Jan 2010

Large Dielectric Tuning And Microwave Phase Shift At Low Electric Field In Epitaxial Ba0.5sr0.5tio3 On Srtio3, J. H. Leach, H. Liu, V. Avrutin, B. Xiao, Ü. Özgür, H. Morkoç, J. Das, Y. Y. Song, C. E. Patton

Electrical and Computer Engineering Publications

Dielectric properties of annealed and as-grown ferroelectricBa0.5Sr0.5TiO3 (BST) grown by pulsed laser deposition on sputtered BST seed layers on strontium titanate (STO) substrates were investigated at microwave frequencies in the realm of tunability of its dielectric constant as well as phase shifters based on this material. The as-grown layers were nearly fully relaxed with measured lattice parameters nearly identical to those of bulk BST. The tuning of the relative dielectric constant (∼1750 at zero bias at 10 GHz) of the annealed BST was found to be as high as 59% and 56% at 10 and 19 GHz, respectively. The analysis …

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Bias Dependent Two-Channel Conduction In Inaln/Aln/Gan Structures, J. H. Leach, X. Ni, X. Li, M. Wu, Ü. Özgür, H. Morkoç, L. Zhou, D. A. Cullen, D. J. Smith, H. Cheng, Ç. Kurdak, J. R. Meyer, I. Vurgaftman Jan 2010

Bias Dependent Two-Channel Conduction In Inaln/Aln/Gan Structures, J. H. Leach, X. Ni, X. Li, M. Wu, Ü. Özgür, H. Morkoç, L. Zhou, D. A. Cullen, D. J. Smith, H. Cheng, Ç. Kurdak, J. R. Meyer, I. Vurgaftman

Electrical and Computer Engineering Publications

Due to growth temperature differences during deposition of GaN heterostructures utilizing InAlN barriers, an inadvertent parasitic GaN layer can form in the InAlN barrier layer. In structures utilizing AlN spacer layers, this parasitic layer acts as a second conduction channel with a carrier density dependent upon polarization charges and lattice strain as well as the surface potential. The effect of an additional GaN spacer layer in InAlN/AlN/GaN structures is assessed using simulations, electron-microscopy observations, magnetoconductivity measurements with gated Hall bar samples, and with quantitative mobility spectrum analysis. We propose a possible formation mechanism for the parasitic layer, and note that …

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Ti/Al/Ni/Au Ohmic Contacts For Alinn/Aln/Gan-Based Heterojunction Field-Effect Transistors, Lin Zhou, Jacob H. Leach, Xianfeng Ni, Hadis Morkoç, David J. Smith Jan 2010

Ti/Al/Ni/Au Ohmic Contacts For Alinn/Aln/Gan-Based Heterojunction Field-Effect Transistors, Lin Zhou, Jacob H. Leach, Xianfeng Ni, Hadis Morkoç, David J. Smith

Electrical and Computer Engineering Publications

The microstructure of AuNiAlTi/Al0.84In0.16N/AlN/GaNOhmic contacts annealed from 700 to 900 °C has been determined using transmission electron microscopy and associated analytical techniques. Intermixing and phase separation of the metal contact layers was observed to degrade the surface roughness. An optimal contact performance was obtained for contacts annealed at 800 °C and was attributed to the formation of TiN contact inclusions that had penetrated through the AlInN layers into the GaN layers underneath. These TiN contact inclusions had an inverted mushroom shape with a density of ∼108 cm−2, and they were invariably located at the positions of mixed-type threading dislocations. These …

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Hot Electron Effects On Efficiency Degradation In Ingan Light Emitting Diodes And Designs To Mitigate Them, X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis Jan 2010

Hot Electron Effects On Efficiency Degradation In Ingan Light Emitting Diodes And Designs To Mitigate Them, X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis

Electrical and Computer Engineering Publications

Hot electrons and the associated ballistic and quasiballistic transport, heretofore neglected endemically, across the active regions of InGaN light emitting diodes (LEDs) have been incorporated into a first order simple model which explains the experimental observations of electron spillover and the efficiency degradation at high injection levels. The model is in good agreement with experiments wherein an adjustable barrier hot electron stopper, commonly called the electron blocking layer (EBL), is incorporated. The model is also in agreement with experiments wherein the electrons are cooled, eliminating hot electrons, inside a staircase electron injector (SEI) prior to their injection into the active …

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On The Use Of A Dynamic Hybrid Tempo Detection Model For Beat Tracking, Mikel Gainza Jan 2010

On The Use Of A Dynamic Hybrid Tempo Detection Model For Beat Tracking, Mikel Gainza

Conference papers

In this paper, an approach that estimates the times at which musical beats occur is presented. The system uses a hybrid multi-band decomposition in order to estimate the music tempo. Following this, beat events are tracked by using a dynamic programming approach, which is updated by using short time tempo estimates. The hybrid decomposition is used in order to calculate the tempo by using different onset detection functions in different frequency bands. In addition, a method that estimates which frequency bands provide reliable periodicities is also presented. The accuracy of the model is evaluated by comparing the presented system against …

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Fabrication Of Fully Isolated Nfets Using Oxidized Porous Silicon, A Chadwick, K D. Hirschman Jan 2010

Fabrication Of Fully Isolated Nfets Using Oxidized Porous Silicon, A Chadwick, K D. Hirschman

Journal of the Microelectronic Engineering Conference

SOl (Silicon on Insulator) technology is an option in improving device performance as smaller devices run into scaling challenges. The devices for this study were fabricated using a FIPOS (Fully Isolated Porous Oxidized Silicon) process, which results in localized SOl active regions. The oxidation of electrochemically etched porous silicon (PSi) has demonstrated success in the formation of device quality localized S01 for CMOS applications 11,21. The formation of PSi can be done selectively by controlling the Fermi level in areas to be etched or not etched, which is typically done by adjusting the level of doping Ill. An alternative method …

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The Optical Vortex Lens, Christopher Chao Jan 2010

The Optical Vortex Lens, Christopher Chao

Journal of the Microelectronic Engineering Conference

The project seeks to fabricate a vortex lens (phase shift device) using optical lithography with a future goal of using it for astronomy purposes. initially the goal is to create a lens tuned to a HeNe laser (632.8 nm wavelength) with eight photoresist steps, which causes the light to undergo a phase shift. It is this shift that allows the vortex lens to suppress starlight in the vicinity of extra solar planets; it diffracts the light of the star while preserving the image of the nearby planet.

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Low Less Etchless Silicon Waveguides, Duk Hwang Jan 2010

Low Less Etchless Silicon Waveguides, Duk Hwang

Journal of the Microelectronic Engineering Conference

Fabrication of silicon waveguides without performing any silicon etching is demonstrated. The silicon waveguides are defined by the concept of “selective oxidation”. The experiment demonstrates that the waveguides formed by selective oxidation produce ultra-smooth sidewalls since etching of silicon is avoided. The Si etching usually creates damage from ion bombardment and chemical reactions that occur during plasma etching. The final waveguide also demonstrates very low light low based on optical testing which shows that no light scattering is observed. The final waveguide has a width of 1.5 μm and a height of ~80 nm. The GCA stepper is utilized …

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Mobility Comparison Of Poly (3-Hexylthiophene) Based Organic Field Effect Transistors, Harry Zhiyuan Hu Jan 2010

Mobility Comparison Of Poly (3-Hexylthiophene) Based Organic Field Effect Transistors, Harry Zhiyuan Hu

Journal of the Microelectronic Engineering Conference

Poly (3-hexylthiophene)(P3HT) is the widely used in configuration of polymer solar cells. In order to correlate improvement in mobility with an improvement in power conversion efficiency of solar cell, organic field effect transistor (OFET) is investigated, which can easily extract mobility basing on I-V characteristic. Experiment shows that mobility of P3HT increase 290% after annealing. Also several experiments are done to diagnose larger deviation problem among chips to chips.

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Cell Size Effects On Concentrator Solar Cell Performance, Z S. Bittner, M Harris, S Polly, C Bailey, S M. Hubbard Jan 2010

Cell Size Effects On Concentrator Solar Cell Performance, Z S. Bittner, M Harris, S Polly, C Bailey, S M. Hubbard

Journal of the Microelectronic Engineering Conference

The sun is an abundant power source that is clean and inexhaustible. Photovoltaic devices facilitate the collection of this energy The practice of using relatively inexpensive optics to concentrate light to reduce the amount of expensive semiconductor required has been a large driver in terrestrial application of concentrator photovoltaics (CPV). Solar cell design is critical in optimizing the device for CPV conditions. The goal of this project was to design and optimize GaAs solar cells of sizes ranging from 0.0125cm2 to 0.25cm2 for operation under a light concentration of 500 suns. The parameter of cell size was investigated …

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All-Optical Gate: Silicon-On-Insulator Waveguide, Ring Resonator, And All-Optical Modulation, Robert Brown, Stefan Preble Jan 2010

All-Optical Gate: Silicon-On-Insulator Waveguide, Ring Resonator, And All-Optical Modulation, Robert Brown, Stefan Preble

Journal of the Microelectronic Engineering Conference

The outlook on Optical Interconnects replacing Metal Interconnects on ICs is promising. However some devices must be realized before implementing schemes of photonic circuits and systems. In this project we created a near-perfect silicon nanophotonics process at RIT. A ring resonator fabricated hear was shown to have a Quality-Factor of 10,000. We then demonstrated the ability of these resonant devices to act as a highfrequency optical switch.

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Solid-Phase Crystallization And Implanted Dopant Activation In Pecvd A-Si:H Thin Films, Nathaniel R. Lozier Jan 2010

Solid-Phase Crystallization And Implanted Dopant Activation In Pecvd A-Si:H Thin Films, Nathaniel R. Lozier

Journal of the Microelectronic Engineering Conference

These instructions give you guidelines for preparing papers for IEEE TRANSACTIONS and JOURNALS. Use this document as a template if you are using Microsoft Word 6.0 or later. Otherwise, use this document as an instruction set. The electronic file of your paper will be formatted further at IEEE. Define all symbols used in the abstract. Do not cite references in the abstract. Do not delete the blank line immediately above the abstract; it sets the footnote at the bottom of this column.

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Design And Fabrication Of Mems Multi-Sensor, Michael P. Brindak Jan 2010

Design And Fabrication Of Mems Multi-Sensor, Michael P. Brindak

Journal of the Microelectronic Engineering Conference

A single mask-set was designed and implemented into the RIT bulk MEMS process in order to create multiple piezoresistive MEMS sensors. These sensors included a IVIEMS accelerometer, pressure sensor and flow sensor. Sizes of 9mm2, 36mm2, 81 mm2 were included in the design.Using this integration, the difference between the sensors was the utilization of the piezoresistive properties of the thin diaphragm with polysilicon resistors by different packaging and off chip electronics. In the gas flow sensor the resistor lengths and resistances induced a voltage change by flow of a liquid over the diaphragm. In the …

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Deep Submicron Iii-V On Si-Based Esaki Diode, K L. Johnson, S L. Rommel, M Barth, D Pawlik, P Thomas Jan 2010

Deep Submicron Iii-V On Si-Based Esaki Diode, K L. Johnson, S L. Rommel, M Barth, D Pawlik, P Thomas

Journal of the Microelectronic Engineering Conference

Esaki tunneling diodes are reemerging as a viable technology option in helping to improve speed and performance of many high speed device applications. The revival of this technology may be linked to the development of new substrates available to research that allows for the fabrication of a device comparable to current silicon technology. Using a 111-V on Silicon Substrate, it was demonstrated that it is possible to create working Esaki Tunneling Diodes.

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Investigating The Coefficient Of Thermal Expansion Of Pecvd Teos Sio2 On Silicon, Justin Delmonte Jan 2010

Investigating The Coefficient Of Thermal Expansion Of Pecvd Teos Sio2 On Silicon, Justin Delmonte

Journal of the Microelectronic Engineering Conference

The goal of the experiment was to determine the coefficient of thermal expansion for PECVD TEOS on SiO2 on silicon using surface machined MEMS. Two different devices were used to investigate the property along with an available environmental chamber and an optical interferomeler. One device yielded no results and the other device needs tuning to yield more accurate results. The investigation as a whole proved that the methodology works should devices be obtained or fabricated that could measure what is necessary to calculate the coefficients accurately.

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