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2004

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Articles 1831 - 1860 of 2785

Full-Text Articles in Engineering

The Effect Of Hydrogen Etching On 6h-Sic Studied By Temperature-Dependent Current-Voltage And Atomic Force Microscopy, S. Doğan, D. Johnstone, F. Yun, S. Sabuktagin, J. Leach, A. A. Baski, Hadis Morkoç, G. Li, B. Ganguly Jan 2004

The Effect Of Hydrogen Etching On 6h-Sic Studied By Temperature-Dependent Current-Voltage And Atomic Force Microscopy, S. Doğan, D. Johnstone, F. Yun, S. Sabuktagin, J. Leach, A. A. Baski, Hadis Morkoç, G. Li, B. Ganguly

Electrical and Computer Engineering Publications

6H–SiC was etched with hydrogen at temperatures between 1000 and 1450°C. The etchedSi-terminated face for the 6H‐SiC wafer was investigated by atomic force microscopy and temperature-dependent current–voltage (I–V–T)measurements. Mechanical polishing damage was effectively removed by hydrogen etching at temperatures above 1250°C. Atomic force microscopy images revealed that very good surface morphology, atomic layer flatness, and large and large step width were achieved. Schottky diode characteristics were investigated in detail by current–voltage and temperature-dependent current–voltage measurements, and the results showed a transition from defect assisted tunneling to thermionic emission as the annealingtemperature was increased from 1250 to 1450°C.

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Stimulated Emission And Time-Resolved Photoluminescence In Rf-Sputtered Zno Thin Films, Ü. Özgür, A. Teke, C. Liu, S.-J. Cho, Hadis Morkoç, H. O. Everitt Jan 2004

Stimulated Emission And Time-Resolved Photoluminescence In Rf-Sputtered Zno Thin Films, Ü. Özgür, A. Teke, C. Liu, S.-J. Cho, Hadis Morkoç, H. O. Everitt

Electrical and Computer Engineering Publications

Stimulated emission (SE) was measured from ZnOthin filmsgrown on c-plane sapphire by rf sputtering. Free exciton transitions were clearly observed at 10 K in the photoluminescence(PL), transmission, and reflection spectra of the sample annealed at 950 °C. SE resulting from both exciton-exciton scattering and electron hole plasma formation was observed in the annealed samples at moderate excitation energy densities. The SE threshold energy density decreased with increasing annealing temperature up to ∼950 °C. The observation of low threshold exciton-exciton scattering-induced SE showed that excitonic laser action could be obtained in rf-sputtered ZnOthin films. At excitation densities below the SE threshold, …

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Investigation Of Forward And Reverse Current Conduction In Gan Films By Conductive Atomic Force Microscopy, J. Spradlin, S. Doǧan, J. Xie, R. Molnar, A. A. Baski, Hadis Morkoç Jan 2004

Investigation Of Forward And Reverse Current Conduction In Gan Films By Conductive Atomic Force Microscopy, J. Spradlin, S. Doǧan, J. Xie, R. Molnar, A. A. Baski, Hadis Morkoç

Electrical and Computer Engineering Publications

We have used conductive atomic force microscopy (C–AFM) to investigate the forward and reverse bias current conduction of homo- and heteroepitaxial GaN-based films grown by molecular beam epitaxy. In the case of homoepitaxy, C–AFM shows enhanced current conduction at the centers of ∼30% of spiral hillocks, which are associated with screw dislocations. Local current–voltage spectra taken by C–AFM on and off such hillocks indicate Frenkel–Poole and field emission mechanisms, respectively, for low current levels in forward conduction. In the case of heteroepitaxialGaN films grown on sapphire, the correlation between conduction pathways and topography is more complex. We do observe, however, …

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Effects Of Hydrostatic And Uniaxial Stress On The Schottky Barrier Heights Of Ga-Polarity And N-Polarity N-Gan, Y. Liu, M. Z. Kauser, M. I. Nathan, P. P. Ruden, S. Dogan, Hadis Morkoç, S. S. Park, K. Y. Lee Jan 2004

Effects Of Hydrostatic And Uniaxial Stress On The Schottky Barrier Heights Of Ga-Polarity And N-Polarity N-Gan, Y. Liu, M. Z. Kauser, M. I. Nathan, P. P. Ruden, S. Dogan, Hadis Morkoç, S. S. Park, K. Y. Lee

Electrical and Computer Engineering Publications

We report measurements of the Schottky barrier heights of Ni/Au contacts on Ga-polarity and N-polarity n-GaN under hydrostatic pressure and applied in-plane uniaxial stress. Under hydrostatic pressure the two different polarities of GaN yield significantly different rates of Schottky barrier height increase with increasing pressure. Uniaxial stress parallel to the surface affects the Schottky barrier height only minimally. The observed changes in barrier height under stress are attributed to a combination of band structure and piezoelectric effects.

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Surface Band Bending In As-Grown And Plasma-Treated N-Type Gan Films Using Surface Potential Electric Force Microscopy, Sang-Jun Cho, Seydi Doğan, Shahriar Sabuktagin, Michael A. Reshchikov, D. Johnstone, Hadis Morkoç Jan 2004

Surface Band Bending In As-Grown And Plasma-Treated N-Type Gan Films Using Surface Potential Electric Force Microscopy, Sang-Jun Cho, Seydi Doğan, Shahriar Sabuktagin, Michael A. Reshchikov, D. Johnstone, Hadis Morkoç

Electrical and Computer Engineering Publications

The surface band bending, as well as the effect of plasma-induced damage on band bending, on GaN surfaces, was investigated. The upward band bending, measured by surface potentialelectric force microscopy (a variant of atomic force microscopy), for the as-grown n -type GaNwas about 1.0 eV which increased to ∼1.4 eV after reactive ion etching (RIE). UV illuminationdecreased the band bending by 0.3 eV with time constants on the order of seconds and hundreds of seconds for the as-grown and RIE treated GaN, respectively. This implies that there is a higher density of the surface states in the samples subjected to …

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Characterization Of Ingan/Gan Multi-Quantum-Well Blue-Light-Emitting Diodes Grown By Metal Organic Chemical Vapor Deposition, K. S. Ramaiah, Y. K. Su, S. J. Cheng, B. Kerr, H. P. Liu, I. G. Chen Jan 2004

Characterization Of Ingan/Gan Multi-Quantum-Well Blue-Light-Emitting Diodes Grown By Metal Organic Chemical Vapor Deposition, K. S. Ramaiah, Y. K. Su, S. J. Cheng, B. Kerr, H. P. Liu, I. G. Chen

Electrical and Computer Engineering Publications

The structural,surface morphology, and the temperature dependence photoluminescence of InGaN(3 nm)/GaN(7 nm) 5 period multi-quantum-well blue-light-emitting diode (LED)structures grown by metal organic chemical vapor deposition(MOCVD) have been studied. Quantum dot-likestructures and strain contrast evident by black lumps were observed in the quantum wells using high-resolution transmission electron microscopy(HRTEM) analysis. Double-crystal high-resolution x-ray diffraction (HRXRD) spectra of blue LED were simulated using kinematical theory method, to obtain composition, and period thickness of well and barrier. The “S” shape character shift as red–blue–redshift of the quantum-well emission line, i.e., blue emission peak 2.667 eV at 10 K, was observed with variation of …

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Decay Of Spin-Polarized Hot Carrier Current In A Quasi-One-Dimensional Spin-Valve Structure, S. Pramanik, Supriyo Bandyopadhyay, M. Cahay Jan 2004

Decay Of Spin-Polarized Hot Carrier Current In A Quasi-One-Dimensional Spin-Valve Structure, S. Pramanik, Supriyo Bandyopadhyay, M. Cahay

Electrical and Computer Engineering Publications

We study the spatial decay of spin-polarized hot carriercurrent in a spin-valve structure consisting of a semiconductorquantum wire flanked by half-metallic ferromagnetic contacts. The current decays because of D’yakonov-Perel’ spin relaxation in the semiconductor caused by Rashba and Dresselhaus spin–orbit interactions in multi-channeled transport. The associated relaxation length is found to decrease with increasing lattice temperature (in the range from 30 to 77 K) and exhibit a nonmonotonic dependence on the electric field driving the current. The relaxation lengths are several tens of microns which are at least an order of magnitude larger than what has been theoretically calculated for …

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Gan Epitaxy On Thermally Treated C-Plane Bulk Zno Substrates With O And Zn Faces, Xing Gu, Michael A. Reshchikov, Ali Teke, D. Johnstone, Hadis Morkoç, Bill Nemeth, Jeff Nause Jan 2004

Gan Epitaxy On Thermally Treated C-Plane Bulk Zno Substrates With O And Zn Faces, Xing Gu, Michael A. Reshchikov, Ali Teke, D. Johnstone, Hadis Morkoç, Bill Nemeth, Jeff Nause

Electrical and Computer Engineering Publications

ZnO is considered as a promising substrate for GaNepitaxy because of stacking match and close lattice match to GaN. Traditionally, however, it suffered from poor surface preparation which hampered epitaxialgrowth in general and GaN in particular. In this work, ZnO substrates with atomically flat and terrace-like features were attained by annealing at high temperature in air. GaNepitaxial layers on such thermally treated basal plane ZnO with Zn and O polarity have been grown by molecular beam epitaxy, and two-dimensional growth mode was achieved as indicated by reflection high-energy electron diffraction. We observed well-resolved ZnO and GaN peaks in the high-resolution …

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Phase-Coherent Quantum Mechanical Spin Transport In A Weakly Disordered Quasi-One-Dimensional Channel, M. Cahay, S. Bandyopadhyay Jan 2004

Phase-Coherent Quantum Mechanical Spin Transport In A Weakly Disordered Quasi-One-Dimensional Channel, M. Cahay, S. Bandyopadhyay

Electrical and Computer Engineering Publications

A transfer matrix technique is used to model phase-coherent spin transport in the weakly disordered quasi-one-dimensional channel of a gate-controlled electron spin interferometer [S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990)]. The model includes the effects of an axial magnetic field in the channel of the interferometer (caused by the ferromagnetic contacts), a Rashba spin-orbit interaction, and elastic (nonmagnetic) impurity scattering. We show that in the presence of an axial magnetic field, nonmagnetic impurities can cause spin relaxation in a manner similar to the Elliott-Yafet mechanism. The amplitudes and phases of the conductance oscillations of the interferometer …

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Excitonic Fine Structure And Recombination Dynamics In Single-Crystalline Zno, A. Teke, Ü. Özgür, S. Doğan, X. Gu, Hadis Morkoç, B. Nemeth, J. Nause, H. O. Everitt Jan 2004

Excitonic Fine Structure And Recombination Dynamics In Single-Crystalline Zno, A. Teke, Ü. Özgür, S. Doğan, X. Gu, Hadis Morkoç, B. Nemeth, J. Nause, H. O. Everitt

Electrical and Computer Engineering Publications

The optical properties of a high quality bulk ZnO, thermally post treated in a forming gas environment are investigated by temperature dependent continuous wave and time-resolved photoluminescence (PL) measurements. Several bound and free exciton transitions along with their first excited states have been observed at low temperatures, with the main neutral-donor-bound exciton peak at 3.3605 eV having a linewidth of 0.7 meV and dominating the PL spectrum at 10 K. This bound exciton transition was visible only below 150 K, whereas the A-free exciton transition at 3.3771 eV persisted up to room temperature. A-free exciton binding energy of 60 meV …

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Balancedenergy Sleep Scheduling Scheme For High Density Cluster-Based Sensor Networks, Jing Deng, Yunghsiang S. Han, Wendi B. Heinzelman, Pramod K. Varshney Jan 2004

Balancedenergy Sleep Scheduling Scheme For High Density Cluster-Based Sensor Networks, Jing Deng, Yunghsiang S. Han, Wendi B. Heinzelman, Pramod K. Varshney

Electrical Engineering and Computer Science - All Scholarship

In order to conserve battery power in very dense sensor networks, some sensor nodes may be put into the sleep state while other sensor nodes remain active for the sensing and communication tasks. However, determining which of the sensor nodes should be put into the sleep state is non-trivial. As the goal of allowing nodes to sleep is to extend network lifetime, we propose and analyze a Balanced-energy Scheduling (BS) scheme in the context of cluster-based sensor networks. The BS scheme aims to evenly distribute the energy load of the sensing and communication tasks among all the nodes in the …

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Metal Source/Drain Schottky Field Effect Transistors - A Proof Of Concept, Reinaldo A. Vega Jan 2004

Metal Source/Drain Schottky Field Effect Transistors - A Proof Of Concept, Reinaldo A. Vega

Journal of the Microelectronic Engineering Conference

Field effect transistors, in which the sources and drains are made of metal (aluminum), as opposed to silicon, have been conceived, designed, fabricated, and tested. For the n body device, maximum Jon was found to be 74.69μA/μm after a “burn-in” process was performed. For 1V to 10V drain bias, extracted Vtsat values varied between 2.3V and 6.SV, gm between 0.002 and 341μS, sub-Vt slope between 111 and 706mV/dec, and Ion:Ioff between 1.11 and 3.99 decades. The Schottky barrier height was found to be 0.503eV. Additionally, full CMOS operation using one metal for both NFET and PFET operation is proposed and …

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Design And Fabrication Of Tri-Gated Finfet, Mohammed R. Rahman Jan 2004

Design And Fabrication Of Tri-Gated Finfet, Mohammed R. Rahman

Journal of the Microelectronic Engineering Conference

A Tn Gated Fin Field Effect Transistor is on of the many novel devices that may be replacing planar MOSFETs, by reducing short channel effects. The FinFET has emerged as one of the most promising double gate structures primarily because of its ease of manufacturing. There are still significant challenges to overcome it in order to make the process available commercially. The Tri-Gated FinFET is tri-gated meaning that the gate overlaps the top and the two sides of the FIN. Three dimensionally the gate depletes three surfaces of the FIN, which results in a higher drive current relative to a …

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Development Of Thin Gate Oxides For Advanced Cmos Applications, Bryant Mann Jan 2004

Development Of Thin Gate Oxides For Advanced Cmos Applications, Bryant Mann

Journal of the Microelectronic Engineering Conference

A study has been performed to investigate oxynitrides as thin gate dielectrics. The method of nitridation was a two step process involving variations of nitrous oxide and oxygen thermal soak times. The investigation of oxynitride gate dielectric was carried out through the fabrication of MOS capacitors. Thickness measurements were obtained using VASE ellipsometry and CV analysis was performed to test the electrical integrity of the dielectric. The CV analysis resulted in high frequency curves that displayed a low frequency response due to minority charge.

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Capacitance-Voltage Analysis Of High-? Dielectric On Strained Silicon, Mike Latham Jan 2004

Capacitance-Voltage Analysis Of High-? Dielectric On Strained Silicon, Mike Latham

Journal of the Microelectronic Engineering Conference

Device characteristics are reported on Hf02 gate dielectrics deposited by atomic layer deposition (ALD), and jet vapor deposition (JVD) on strained-Si and bulk Si samples. Capacitance-Voltage (CV) analysis of samples shows comparable interface charge levels between strained-Si and bulk Si samples. A flat band shift of -0.5V was noted between the strained-Si and bulk Si for the JVD samples.

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Work Function Engineering With Molybdenum And Molybdenum-Nitride Gate Pmos, Valarie Welsh Jan 2004

Work Function Engineering With Molybdenum And Molybdenum-Nitride Gate Pmos, Valarie Welsh

Journal of the Microelectronic Engineering Conference

The motivation for the creation of PIT metal gate PMOS process transistors was to investigate and prove the work function of molybdenum can be changed through reactive sputtering and thermal processing. The existing PIT metal gate PMOS process was adapted to form Molybdenum and Molybdenum-Nitride PMOS transistors. Processing of the molybdenum films affected the final composition of the gate electrode and ultimately its work function. Through theoretical and real analysis, the work functions of Mo and MoN gates were extracted and compared with one another as well as to Al. Examination of the extracted work functions revealed the presence of …

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Phosphoric Acid As A High-Index Immersion Fluid, Karen R. Wolf Jan 2004

Phosphoric Acid As A High-Index Immersion Fluid, Karen R. Wolf

Journal of the Microelectronic Engineering Conference

A study has been performed to determine the viability of phosphoric acid as a high-index fluid for immersion lithography. The ability to image in the immersion fluid, and the compatibility of the fluid with photoresist were examined. Samples were soaked in the fluid before and after exposure in water to demonstrate no significant damage to the imaging capability of the resist. The refractive index of photoresist samples soaked in various immersion fluids was measured with a variable angle spectroscopic ellipsometer (VASE), and results did not show a significant variation from photoresist that was not soaked. Sixty-eight nanometer lines were imaged …

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Quadrupole Illumination Design For A 193nm Hyper-Na Exitech Immersion Stepper, Derek J. Summers Jan 2004

Quadrupole Illumination Design For A 193nm Hyper-Na Exitech Immersion Stepper, Derek J. Summers

Journal of the Microelectronic Engineering Conference

As device sizes reduce in size and processes become more complex, enhancement techniques for optical lithography are essential. Several ways to enhance the current lithographic systems include immersion lithography, phaseshifting masks, optical proximity correction and OAT (off-axis illumination). Depending on the process, these RETs (resolution enhancement techniques) may be used individually or in combination to compensate for image degradation caused by optical diffraction and resist behavior. The purpose of this project is to design and test a quadrupole off-axis illumination aperture for the 193 nm Immersion stepper at RIT. Process window simulations, using Prolith, were used to determine theoretical effectiveness …

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Development Of A Full Silicidation (Fusi) Process For Nickel Silicide, Yaser A. Alshehri Jan 2004

Development Of A Full Silicidation (Fusi) Process For Nickel Silicide, Yaser A. Alshehri

Journal of the Microelectronic Engineering Conference

Suicides have been long used to solve the problem of poly depletion effects in the CMOS circuits. The depletion layer in the poly-gates increases the total effective gate-dielectric thickness causing a poor device performance. Many advantages are promised in replacing the Polysilicon gates with metal gates, which include improved sheet resistance of the gates, decreased equivalent electrical thickness of gate dielectric by eliminating the Polysilicon gate depletion effect, and dual work functions, higher than n+ poly work function for NMOS and lower than p+ poly for PMOS in a single full Silicidation (FUSI) of Polysilicon gates. In the ever reducing …

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Implementation Of Backside Vias As An Alternative To Wafer Thinning, Michael E. Hathorn Jan 2004

Implementation Of Backside Vias As An Alternative To Wafer Thinning, Michael E. Hathorn

Journal of the Microelectronic Engineering Conference

A study has been performed to determine the viability of Potassium hydroxide (KOH) as a wet etchant to create backside vias to devices previously manufactured on thinned wafers. In order to protect frontside devices in the back end of line process, the KOH must not come in contact with the front of the wafer. A number of methods have been investigated with the advantage being in the use of a coat of black wax. This paper will present results obtained from tests with black wax as well as provide insight to the advantages and disadvantages of other protection options.

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Face-To-Face Die Bonding And Direct Interconnects, Jeffrey A. Steinfeldt Jan 2004

Face-To-Face Die Bonding And Direct Interconnects, Jeffrey A. Steinfeldt

Journal of the Microelectronic Engineering Conference

In this investigation and process development project, a novel method for directly connecting two computer chips together, both electrically and physically was developed. This process utilized several processes and materials that are already used in semiconductor manufacturing and packaging. By using these common materials and processes, it simplifies the implementation of the process, and removes several potential roadblocks. It was found that two chips could successfully be bonded together physically and connected electrically.

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Silica Waveguide Design And Fabrication Using Integrated Optics: A Link To Optical Vlsi Photonics Integration For Semiconductor Technology, Anthony G. Navarro Jan 2004

Silica Waveguide Design And Fabrication Using Integrated Optics: A Link To Optical Vlsi Photonics Integration For Semiconductor Technology, Anthony G. Navarro

Journal of the Microelectronic Engineering Conference

The hardmask NiCr, has shown to be the optimum alloy in reducing sidewall roughness (SWR) in planar waveguide geometries. Within this study, the NiCr hardmask has been demonstrated using a lift-off of NiCr. In comparison, a NiCr etchant from TranseneT~t is used to compare how well sidewall roughness is reduced, and how the RIE - CHF3/O2 gas mixture improved anisotropy. From the results obtained, NiCr is a robust material that reduces sidewall roughness, and is the best metal to use, with the least amount of transferred striations. The CHF3/CF4 gas mixture in the AME …

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Investigation And Development Of Air Bridges, Jay Cabacungan Jan 2004

Investigation And Development Of Air Bridges, Jay Cabacungan

Journal of the Microelectronic Engineering Conference

A study was done in order to develop a fabrication process for creating air bridges at RIT’s Semiconductor and Microsystems Fabrication Laboratory (SMFL). Process development looked at three key factors (i) a robust lithography process that would produce the necessary rounded profile for fabricating air bridges (ii) sputter deposition vs. evaporation as metal deposition techniques (iii) the strength of the structures by testing the maximum distance an air bridge could span, the minimum and maximum thickness the structure could support, and the dimensions of the support posts. Several samples were fabricated testing the three different factors studied and SEM micrographs …

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Design And Fabrication Of A Micro-Size Thermionic Ionization/Flame Ionization Detector For Gas Phase Chemical Analytes, Robert Manley Jan 2004

Design And Fabrication Of A Micro-Size Thermionic Ionization/Flame Ionization Detector For Gas Phase Chemical Analytes, Robert Manley

Journal of the Microelectronic Engineering Conference

A simple, MEMS base micro-chemical detector utilizing the principles of gas ionization, has been designed and fabricated. The device contains a polysilicon micro air-bridge heater structure with integrated polysilicon electrodes. The design of the devices allows it not only functions via thermionic emission, but also via chemi-ionization if a proper Pt catalyst is applied and it is operated in an environment containing hydrogen. When properly biased the device has been shown to heat to high temperatures where thermionic emission can begin to occur. Hydrocarbon chemicals in the gas phase have shown to ionize, via thermionic ionization and have been collected, …

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Fabrication And Characterization Of A Packaged Mems Gas Flow Sensor, Vee Chee Hwang Jan 2004

Fabrication And Characterization Of A Packaged Mems Gas Flow Sensor, Vee Chee Hwang

Journal of the Microelectronic Engineering Conference

A surface micromachined MEMS gas flow sensor has been fabricated and tested. The fabrication process of the device was presented. The heater glowed red hot when a voltage of 27V was applied if the underlying LTO was completely etched away. Both the upstream and downstream resistors changed when temperature changed. A proof of concept showing that output voltage changes with gas flow was shown.

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Fabrication Of Polysilicon Micro Valve Array, Jermaine White Jan 2004

Fabrication Of Polysilicon Micro Valve Array, Jermaine White

Journal of the Microelectronic Engineering Conference

Valves are an essential part of pumping systems, which are used in a wide variety of applications including medical, automotive, gas sampling, and gas analysis. The objective of this investigation is to design and fabricate microvalve arrays. The valve consists of a polysilicon flap suspended over a through hole in the silicon. It is intended to allow airflow in one direction and inhibit airflow in the reverse direction. The design requires only three mask levels, two on the front of the wafer and one on the backside. The front side masks are level: 1 Anchor and level 2: Flap. The …

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Study Of Silicon Solar Cell Array To Power Mems Cantilever Actuator, Benjamin Kolodzie Jan 2004

Study Of Silicon Solar Cell Array To Power Mems Cantilever Actuator, Benjamin Kolodzie

Journal of the Microelectronic Engineering Conference

A solar cell array to power a on board microelectromechanical polysilicon cantilever actuator was designed, fabricated and tested. The device composes of two solar cell arrays one array with 330 solar cells and another array with 300 solar cells. The device also consists of several cantilevers. The fabrication process involved over fifty process steps including nine photolithography levels. To optimize the performance of the solar cell array the entire process was simulated using SILVACO SUPREM simulation software. Electrical examination using ATLAS software allowed for parameter extraction of the computer-generated solar cells. Modeling the extracted parameters with device physics equations allowed …

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Fabrication Of A Magnetically Actuated Torsional Beam, Gary A. Fino Jan 2004

Fabrication Of A Magnetically Actuated Torsional Beam, Gary A. Fino

Journal of the Microelectronic Engineering Conference

A mesoscopic magnetic beam contained in a silicon frame attached to the bulk of a silicon wafer with pivoting hinges will be used to show the affects of magnetic fields on movable magnetic structures. The pivoting hinges will be etched out of silicon using a Deep Reactive Ion Etcher (DRIE) system and the dimensions of the hinges will determine the force required to deflect the beam. Below each end of the beam will be large copper inductor coils fabricated on a separate wafer. When a current is applied to the coil, the magnetic field generated will attract the beam towards …

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Mem's Optical Pyrometer, Edward Camacho Jan 2004

Mem's Optical Pyrometer, Edward Camacho

Journal of the Microelectronic Engineering Conference

Measuring temperature accurately has been and still is a topic of interest in various professional fields such as Astronomy, Biology, Physics and Medicine. An optical pyrometer has great potential in these fields, because it can optically capture a body’s black body radiation and determine a temperature value of the body in question. This technology is well known, yet it is still gaining grounds as new uses are found. In this project a temperature sensor using Mentor Graphics was design, second a four level mask was made into one reticle. Third fabrication of the optical sensor took place using typical process …

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Microfluidic Channels In Polymethyl-Methacrylate By Optimizing Aluminum Adhesion, George W. Woodruff Iii Jan 2004

Microfluidic Channels In Polymethyl-Methacrylate By Optimizing Aluminum Adhesion, George W. Woodruff Iii

Journal of the Microelectronic Engineering Conference

A study has been performed to determine the optimum surface treatment to adhere an aluminum hard mask to a polymethyl-methacrylate (PMMA) wafer substrate for the production of microfluidic channels. The initial process parameters of the PMMA reactive ion surface treatment included oxygen plasma, sulfur hexafluoride plasma and argon plasma designs of experiments. However, a soak in tetra methyl ammonium hydroxide (TMAH) proved to provide the most adhereable surface for an aluminum deposition. It is hypothesized that the TMAH soak allowed for the removal of the surface layer of the PMMA wafer substrate. The aluminum hard mask was deposited by evaporation …

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