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Faculty Publications

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Articles 2761 - 2790 of 3294

Full-Text Articles in Engineering

Si3N4/Algan/Gan-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, X. Hu, A. Koudymov, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur, R. Gaska Oct 2001

Si3N4/Algan/Gan-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, X. Hu, A. Koudymov, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur, R. Gaska

Faculty Publications

We report on a metal–insulator–semiconductor heterostructurefield-effect transistor (MISHFET) using Si3N4 film simultaneously for channel passivation and as a gate insulator. This design results in increased radio-frequency (rf) powers by reduction of the current collapse and it reduces the gate leakage currents by four orders of magnitude. A MISHFET room temperature gate current of about 90 pA/mm increases to only 1000 pA/mm at ambient temperature as high as 300 °C. Pulsed measurements show that unlike metal–oxide–semiconductor HFETs and regular HFETs, in a Si3N4 MISHFET, the gate voltage amplitude required for current collapse is much higher …

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Induced Strain Mechanism Of Current Collapse In Algan/Gan Heterostructure Field-Effect Transistors, Grigory Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska Oct 2001

Induced Strain Mechanism Of Current Collapse In Algan/Gan Heterostructure Field-Effect Transistors, Grigory Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

Gated transmission line model pattern measurements of the transient current–voltage characteristics of AlGaN/GaN heterostructurefield-effect transistors(HFETs) and metal–oxide–semiconductor HFETs were made to develop a phenomenological model for current collapse. Our measurements show that, under pulsed gate bias, the current collapse results from increased source–gate and gate–drain resistances but not from the channel resistance under the gate. We propose a model linking this increase in series resistances (and, therefore, the current collapse) to a decrease in piezoelectriccharge resulting from the gate bias-induced nonuniform strain in the AlGaN barrier layer.

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Introducing Cooperative Learning Through A Faculty Instructional Development Program, Nikos J. Mourtos, Emily L. Allen Oct 2001

Introducing Cooperative Learning Through A Faculty Instructional Development Program, Nikos J. Mourtos, Emily L. Allen

Faculty Publications

Cooperative Learning was officially introduced in the College of Engineering at San Jose State University in 1995 with a two-day workshop. The Faculty Instructional Development Program in the college maintains interest in the subjsect and provides support for instructors who use Cooperative Learning, through workshops and informal discussions (Conversations on Teaching). This paper discusses the effectiveness of the program in introducing, promoting, and implementing Cooperative Learning among the faculty and students in the college of engineering. A variety of performance criteria have been used in this assessment, some faculty-centered and some student-centered. The results indicate that although a relatively small …

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Indium-Silicon Co-Doping Of High-Aluminum-Content Algan For Solar Blind Photodetectors, V. Adivarahan, Grigory Simin, G. Tamulaitis, R. Srinivasan, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska Sep 2001

Indium-Silicon Co-Doping Of High-Aluminum-Content Algan For Solar Blind Photodetectors, V. Adivarahan, Grigory Simin, G. Tamulaitis, R. Srinivasan, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

We report on an indium–silicon co-doping approach for high-Al-content AlGaN layers. Using this approach, very smooth crack-free n-type AlGaN films as thick as 0.5 μm with Al mole fraction up to 40% were grown over sapphire substrates. The maximum electron concentration in the layers, as determined by Hall measurements, was as high as 8×1017 cm−3 and the Hall mobility was up to 40 cm2/Vs. We used this doping technique to demonstrate solar-blind transparent Schottky barrierphotodetectors with the cut-off wavelength of 278 nm.

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Characterization Of Two-Dimensional Finite-Aperture Wire Grid Polarizers By A Spectral-Domain Technique, Michael A. Jensen, Gregory P. Nordin Sep 2001

Characterization Of Two-Dimensional Finite-Aperture Wire Grid Polarizers By A Spectral-Domain Technique, Michael A. Jensen, Gregory P. Nordin

Faculty Publications

We investigate the transmission characteristics of perfectly conducting two-dimensional wire grid polarizers fabricated in finite and infinite apertures using a rigorous spectral-domain mode-matching method. Specifically, the transmission coefficient for both transverse-electric and transverse-magnetic polarizations, extinction ratio, and diffraction pattern are characterized for a wide variety of geometric and material parameters including aperture dimension, conducting wire fill factor, wire spacing, polarizer thickness, material dielectric constants, and incident wave arrival angle. The results indicate that the transmission behavior is largely insensitive to aperture dimension.

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Pulsed Atomic Layer Epitaxy Of Quaternary Alingan Layers, J. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur Aug 2001

Pulsed Atomic Layer Epitaxy Of Quaternary Alingan Layers, J. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur

Faculty Publications

In this letter, we report on a material deposition scheme for quaternary AlxInyGa1−x–yN layers using a pulsed atomic layer epitaxy (PALE) technique. The PALE approach allows accurate control of the quaternary layer composition and thickness by simply changing the number of aluminum,indium, and gallium pulses in a unit cell and the number of unit cell repeats. Using PALE, AlInGaN layers with Al mole fractions in excess of 40% and strong room-temperature photoluminescence peaks at 280 nm can easily be grown even at temperatures lower than 800 °C.

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Green Electrochemistry. Examples And Challenges, Michael A. Matthews Aug 2001

Green Electrochemistry. Examples And Challenges, Michael A. Matthews

Faculty Publications

Electrochemical methods have been proposed for synthesis of organic compounds, including conversion of CO2. Such methods may provide a basis for environmentally friendly and sustainable methods for chemical production. Nevertheless, electrochemical syntheses are not widely utilized. Several examples of ongoing research are presented that illustrate both the opportunities as well as the challenges associated with the utilization of electrochemistry for green chemical manufacturing.

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Passivity-Based Control Of Saturated Induction Motors, Levent U. Gökdere, Marwan A. Simaan, Charles W. Brice Aug 2001

Passivity-Based Control Of Saturated Induction Motors, Levent U. Gökdere, Marwan A. Simaan, Charles W. Brice

Faculty Publications

A passivity-based controller, which takes into account saturation of the magnetic material in the main flux path of the induction motor, is developed to provide close tracking of time-varying speed and flux trajectories in the high magnetic saturation regions. The proposed passivity based controller is experimentally verified. Also, a comparison between the controllers based on the saturated and nonsaturated magnetics is presented to demonstrate the benefit of the controller based on the saturated magnetics

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Spline Based Path Planning For Unmanned Air Vehicles, Kevin B. Judd, Timothy W. Mclain Aug 2001

Spline Based Path Planning For Unmanned Air Vehicles, Kevin B. Judd, Timothy W. Mclain

Faculty Publications

A trajectory planning scheme that generates feasible flight routes for an unmanned air vehicle (UAV) is developed. A preliminary path is generated from a Voronoi diagram based on threat locations. This path consists of a series of straight-line segments that cannot be followed exactly by the UAV. Using a series of cubic splines to connect these straight-line segments, this path is refined into an optimum path that is flyable by the UAV. Utilizing a decomposition strategy, both the full path (coarse detail) to the target and the proximate optimum path (fine detail) near the UAV can be quickly computed. The …

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Electromagnetics, David V. Arnold, Richard H. Selfridge, Karl F. Warnick Jul 2001

Electromagnetics, David V. Arnold, Richard H. Selfridge, Karl F. Warnick

Faculty Publications

Many applications of electrical engineering require a knowledge of the behavior of voltages and currents in electronic devices and within conductors. In many other situations it is not enough to understand the behavior the voltages and currents in just the conductors and other components, but also the influence of the voltage and current on surrounding materials.

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Low Frequency Noise In Gan Metal Semiconductor And Metal Oxide Semiconductor Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang Jul 2001

Low Frequency Noise In Gan Metal Semiconductor And Metal Oxide Semiconductor Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang

Faculty Publications

The low frequency noise in GaNfield effect transistors has been studied as function of drain and gate biases. The noise dependence on the gate bias points out to the bulk origin of the low frequency noise. The Hooge parameter is found to be around 2×10−3 to 3×10−3.Temperature dependence of the noise reveals a weak contribution of generation–recombination noise at elevated temperatures.

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Fuel-Saving Strategies For Dual Spacecraft Interferometry Missions, Christopher A. Bailey, Timothy W. Mclain, Randal W. Beard Jul 2001

Fuel-Saving Strategies For Dual Spacecraft Interferometry Missions, Christopher A. Bailey, Timothy W. Mclain, Randal W. Beard

Faculty Publications

Separated spacecraft interferometry missions will require that spacecraft move in a coordinated fashion to ensure minimal and balanced consumption of fuel. This paper develops strategies for determining interferometry mission plans that result in significant fuel savings over standard approaches. Simulation results demonstrate that valuable reductions in fuel consumption can be realized by combining the retargeting and imaging maneuvers required to image multiple stellar sources. Fuel-optimal imaging strategies have been developed for two-spacecraft interferometry missions similar to the proposed StarLight mission using chained local optimization methods. Based on these strategies, sampling-pattern guidelines for space-borne interferometry missions have been developed.

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Increasing Power Density Of Lsgm-Based Solid Oxide Fuel Cells Using New Anode Materials, Kevin Huang, Jen-Hau Wan, John B. Goodenough Jun 2001

Increasing Power Density Of Lsgm-Based Solid Oxide Fuel Cells Using New Anode Materials, Kevin Huang, Jen-Hau Wan, John B. Goodenough

Faculty Publications

Chemical reactions between the superior perovskite oxide-ion conductor Sr- and Mg-doped LaGaO3 (LSGM), CeO2, and NiO have been studied by powder X-ray diffraction. The results showed that an extensive reactivity occurs as a result of La migration driven by a gradient of La chemical activity. La migration across the LSGM/electrode interfaces in a fuel cell leads to the formation of resistive phases at the interface, either LaSrGa3O7 or LaSrGaO4. Use of 40 mol % La2O3 -doped CeO2 as an interlayer between anode and electrolyte as well as in …

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Cooperative Control Of Uav Rendezvous, Timothy W. Mclain, Phillip R. Chandler, Steven Rasmussen, Meir Pachter Jun 2001

Cooperative Control Of Uav Rendezvous, Timothy W. Mclain, Phillip R. Chandler, Steven Rasmussen, Meir Pachter

Faculty Publications

The cooperative control of timing and synchronization of tasks of multiple unmanned air vehicles (UAVs) represents a valuable capability for a wide range of potential multi-UAV missions. This research addresses the specific problem of cooperative rendezvous in which multiple UAVs are to arrive at their targets simultaneously. The development of a rendezvous manager state machine and a cooperative control decomposition approach are described. Simulation results demonstrating the feasibility of the approach are presented.

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Oxygen Permeation Through Cobalt-Containing Perovskites: Surface Oxygen Exchange Vs. Lattice Oxygen Diffusion, Kevin Huang, John B. Goodenough May 2001

Oxygen Permeation Through Cobalt-Containing Perovskites: Surface Oxygen Exchange Vs. Lattice Oxygen Diffusion, Kevin Huang, John B. Goodenough

Faculty Publications

The oxygen permeation fluxes from p′O2 to pnO2 (p′O2>pnO2) across cobalt-containing perovskite ceramic membranes La1−xSrxCoO3−δ and SrCo0.8Fe0.2O3−δ were measured by gas chromatography as functions of oxygen chemical potential gradient, temperature, thickness, and catalytic activity on the surface. Power indexes 0.5>n>0 for uncatalyzed La1−xSrxCoO3−δ and 1>n>0.5 for SrCo0.8Fe0.2O3−δ were obtained when JO2 vs. p′nO2−p'′nO2 …

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Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact To P Gan For High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, R. Gaska Apr 2001

Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact To P Gan For High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, R. Gaska

Faculty Publications

We report on Pd/Ag/Au/Ti/Au alloyed metallic contact to pGaN. An 800 °C anneal for 1 min in flowing nitrogen ambient produces an excellent ohmic contact with a specific contact resistivity close to 1×10−6 Ω cm2 and with good stability under high current operation conditions. This high-temperature anneal forms an alloy between Ag,Au, and pGaN resulting in a highly p-doped region at the interface. Using x-ray photoelectron spectroscopy and x-ray diffractionanalysis, we confirm that the contact formation mechanism is the metal intermixing and alloying with the semiconductor.

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Mechanism Of Radio-Frequency Current Collapse In Gan-Algan Field-Effect Transistors, A. Tarakji, Grigory Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska Apr 2001

Mechanism Of Radio-Frequency Current Collapse In Gan-Algan Field-Effect Transistors, A. Tarakji, Grigory Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

The mechanism of radio-frequency current collapse in GaN–AlGaN heterojunctionfield-effect transistors(HFETs) was investigated using a comparative study of HFET and metal–oxide–semiconductor HFET current–voltage (I–V) and transfer characteristics under dc and short-pulsed voltage biasing. Significant current collapse occurs when the gate voltage is pulsed, whereas under drain pulsing the I–V curves are close to those in steady-state conditions. Contrary to previous reports, we conclude that the transverse electric field across the wide-band-gap barrier layer separating the gate and the channel rather than the gate or surface leakage currents or high-field effects in the gate–drain spacing is responsible for the current collapse. We …

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Determination Of An Ethane Intermolecular Potential Model For Use In Molecular Simulations From Ab Initio Calculations, Richard L. Rowley, Tapani A. Pakkanen, Yan Yang Apr 2001

Determination Of An Ethane Intermolecular Potential Model For Use In Molecular Simulations From Ab Initio Calculations, Richard L. Rowley, Tapani A. Pakkanen, Yan Yang

Faculty Publications

Counterpoise-corrected, supermolecule, ab initio energies obtained at the MP2/6-311+G(3df, 2pd) level were computed for 22 different relative orientations of two ethane molecules as a function of the separation distance between the molecular centers. These energies were used to regress the parameters in several simple, analytical, interatomic or site-site models that can be used for implementation in molecular simulations. Sensitivity analysis indicated that the inter molecular potential surface is insensitive to the C-C interactions and that the parameters in the C-C model are coupled and unobtainable from the dimer energies. Representation of the potential surface can be made in terms of …

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Simultaneous Capture And Mineralization Of Coal Combustion Flue Gas Carbon Dioxide (Co2), Morris D. Argyle, Katta J. Reddy, Sanil John, Hollis Weber, Pradip Bhattacharyya, David T. Taylor, Mikol Christensen, Thomas Foulke, Paul Fahlsing Apr 2001

Simultaneous Capture And Mineralization Of Coal Combustion Flue Gas Carbon Dioxide (Co2), Morris D. Argyle, Katta J. Reddy, Sanil John, Hollis Weber, Pradip Bhattacharyya, David T. Taylor, Mikol Christensen, Thomas Foulke, Paul Fahlsing

Faculty Publications

The mineral carbonation, a process of converting CO2 into stable minerals (mineralization), has been studied extensively to capture and store CO2. However, most of the mineral carbonation studies have been largely investigated at lab scale. Preliminary and pilot scale studies for accelerated mineral carbonation (AMC) were conducted at one of the largest coal-fired power plants (2120 MW) in the USA by reacting flue gas with fly ash particles in a fluidized bed reactor. In the preliminary experiments, flue gas CO2 and SO2 concentrations decreased from 13.0 to 9.6% and from 107.8 to 15.1 ppmv, respectively during the first 2 min. …

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Reduced-Temperature Solid Oxide Fuel Cells Fabricated By Screen Printing, Changrong Xia, Fanglin Chen, Meilin Liu Mar 2001

Reduced-Temperature Solid Oxide Fuel Cells Fabricated By Screen Printing, Changrong Xia, Fanglin Chen, Meilin Liu

Faculty Publications

Electrolyte films of samaria-doped ceria (SDC, Sm0.2Ce0.8O1.9) are fabricated onto porous NiO-SDC substrates by a screen printing technique. A cathode layer, consisting of Sm0.5Sr0.5CoO3 and 10 wt % SDC, is subsequently screen printed on the electrolyte to form a single cell, which is tested at temperatures from 400 to 600°C. When humidified (3% H2O) hydrogen or methane is used  as fuel and stationary air as oxidant, the maximum power densities are 188 (or 78) and 397 (or 304) mW/cm2 at 500 and 600°C, respectively. Impedance analysis …

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Bistable Operation Of A Two-Section 1.3-Mm Inas Quantum Dot Laser—Absorption Saturation And The Quantum Confined Stark Effect, Xiaodong Huang, A. Stintz, Hua Li, Audra Rice, G. T. Liu, L.F. Lester, Julian Cheng, K.J. Malloy Mar 2001

Bistable Operation Of A Two-Section 1.3-Mm Inas Quantum Dot Laser—Absorption Saturation And The Quantum Confined Stark Effect, Xiaodong Huang, A. Stintz, Hua Li, Audra Rice, G. T. Liu, L.F. Lester, Julian Cheng, K.J. Malloy

Faculty Publications

Room temperature, continuous-wave bistability was observed in oxide-confined, two-section, 1.3- m quantum-dot (QD) lasers with an integrated intracavity quantum-dot saturable absorber. The origin of the hysteresis and bistability were shown to be due to the nonlinear saturation of the QD absorption and the electroabsorption induced by the quantum confined Stark effect.

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Band-Edge Luminesce In Quaternary Alingan Light-Emitting Diodes, M. Shatalov, A. Chitnis, V. Adivarahan, A. Lunev, J. Zhang, J. W. Yang, Q. Fareed, Grigory Simin, A. Zakheim, M. Asif Khan, R. Gaska, M. S. Shur Feb 2001

Band-Edge Luminesce In Quaternary Alingan Light-Emitting Diodes, M. Shatalov, A. Chitnis, V. Adivarahan, A. Lunev, J. Zhang, J. W. Yang, Q. Fareed, Grigory Simin, A. Zakheim, M. Asif Khan, R. Gaska, M. S. Shur

Faculty Publications

Operation of InGaNmultiple-quantum-well(MQW)light-emitting diodes(LEDs) with quaternary AlInGaN barriers at room and elevated temperatures is reported. The devices outperform conventional GaN/InGaN MQWLEDs, especially at high pump currents. From the measurements of quantum efficiency and total emitted power under dc and pulsed pumping, we show the emission mechanism for quaternary barrier MQWs to be predominantly linked to band-to-band transitions. This is in contrast to localized state emission observed for conventional InGaN/InGaN and GaN/InGaN LEDs. The band-to-band recombination with an increased quantum-well depth improves the high-current performance of the quaternary barrier MQWLEDs, making them attractive for high-power solid-state lighting applications.

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Highly Doped Thin-Channel Gan-Metal-Semiconductor Field-Effect Transistors, R. Gaska, M. S. Shur, X. Hu, J. W. Yang, A. Tarakji, Grigory Simin, A. Khan, J. Deng, T. Werner, S. Rumyantsev, N. Pala Feb 2001

Highly Doped Thin-Channel Gan-Metal-Semiconductor Field-Effect Transistors, R. Gaska, M. S. Shur, X. Hu, J. W. Yang, A. Tarakji, Grigory Simin, A. Khan, J. Deng, T. Werner, S. Rumyantsev, N. Pala

Faculty Publications

We report on the influence of the channel doping on dc, high frequency, and noise performance of GaN metal–semiconductor field-effect transistors (MESFETs) grown on sapphire substrates. The devices with the channel thicknesses from 50 to 70 nm and doping levels up to 1.5×1018 cm−3 were investigated. An increase in the channel doping results in the improved dc characteristics, higher cutoff, and maximum oscillation frequencies, and reduced low frequency and microwave noise. The obtained results demonstrate that the dc and microwave performance characteristics of short-channel GaN MESFETs may be comparable to those for conventional AlGaN/GaN heterostructure FETs.

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Image Reconstruction And Enhanced Resolution Imaging From Irregular Samples, David G. Long, David S. Early Feb 2001

Image Reconstruction And Enhanced Resolution Imaging From Irregular Samples, David G. Long, David S. Early

Faculty Publications

While high resolution, regularly gridded observations are generally preferred in remote sensing, actual observations are often not evenly sampled and have lower-than-desired resolution. Hence, there is an interest in resolution enhancement and image reconstruction. This paper discusses a general theory and techniques for image reconstruction and creating enhanced resolution images from irregularly sampled data. Using irregular sampling theory, we consider how the frequency content in aperture function-attenuated sidelobes can be recovered from oversampled data using reconstruction techniques, thus taking advantage of the high frequency content of measurements made with nonideal aperture filters. We show that with minor modification, the algebraic …

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Entrance Capacity Of An Automated Highway System, Randolph W. Hall, Ali Nowroozi, Jacob Tsao Jan 2001

Entrance Capacity Of An Automated Highway System, Randolph W. Hall, Ali Nowroozi, Jacob Tsao

Faculty Publications

This paper evaluates the entrance capacity and queueing delay for Automated Highway Systems through use of simulations and analytical modeling. Queueing statistics are also used to determine the sustainable capacity of alternative concepts, taking trip length distribution and spacing between ramps into consideration. Based on safety-spacing headways (produced in a separate analysis), the most promising concept utilizes platoons both on the highway and on on-ramps. However, it is unclear whether comparable capacity can be achieved on exit, when vehicles must be decoupled from their platoons, and whether it is safe for vehicles to enter the highway in closely spaced platoons. …

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A Software Defined Radio Platform With Direct Conversion: Soprano, Shinichiro Haruyama, Robert H. Morelos-Zaragoza Jan 2001

A Software Defined Radio Platform With Direct Conversion: Soprano, Shinichiro Haruyama, Robert H. Morelos-Zaragoza

Faculty Publications

A new software defined radio platform with multiport-based direct conversion is proposed, named SOPRANO (Software Programmable and Hardware Reconfigurable Architecture for Network). The main features of SOPRANO are a high-level design methodology for digital circuits, a new mixer-less direct conversion method, and software algorithms for multi-band and multi-mode operation. We built the first prototype SOPRANO 1.0, which was able to receive PSK and QAM signals with two different carrier frequencies at 2.45 GHz and 5.25 GHz by changing signal processing software.

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Microelectronics Process Engineering: A Non-Traditional Approach To Ms&E (Ingeniería De Procesos Microelectrónicos: Un Acercamiento No Tradicional A La Ciencia De Materiales E Ingeniería), E. Allen, Stacy H. Gleixner, G. Young, David W. Parent, Yasser Dessouky, L. Vanasupa Jan 2001

Microelectronics Process Engineering: A Non-Traditional Approach To Ms&E (Ingeniería De Procesos Microelectrónicos: Un Acercamiento No Tradicional A La Ciencia De Materiales E Ingeniería), E. Allen, Stacy H. Gleixner, G. Young, David W. Parent, Yasser Dessouky, L. Vanasupa

Faculty Publications

Materials Science and Engineering straddles the fence between engineering and science. In order to produce more work-ready undergraduates, we offer a new interdisciplinary program to educate materials engineers with a particular emphasis on microelectronics-related manufacturing. The bachelor's level curriculum in Microelectronics Process Engineering (J1ProE) is interdisciplinary, drawing from materials, chemical, electrical and industrial engineering programs and tied together with courses, internships and projects which integrate thin film processing with manufacturing control methods. Our graduates are prepared for entry level engineering jobs that require knowledge and experience in microelectronics-type fabrication and statistics applications in manufacturing engineering. They also go on to …

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On Interference Cancellation And Iterative Techniques, Ryuji Kohno, Robert H. Morelos-Zaragoza Jan 2001

On Interference Cancellation And Iterative Techniques, Ryuji Kohno, Robert H. Morelos-Zaragoza

Faculty Publications

Recent research activities in the area of mobile radio communications have moved to third generation (3G) cellular systems to achieve higher quality with variable transmission rate of multimedia information. In this paper, an overview is presented of various interference cancellation and iterative detection techniques that are believed to be suitable for 3G wireless communications systems. Key concepts are space-time processing and space-division multiple access (or SDMA) techniques. SDMA techniques are possible with software antennas. Furthermore, to reduce receiver implementation complexity, iterative detection techniques are considered. A particularly attractive method uses tentative hard decisions, made on the received positions with the …

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A Two-Stage Decoder For Pragmatic Trellis-Coded M-Psk Modulation Using A Symbol Transformation, Robert H. Morelos-Zaragoza, Advait Mogre Jan 2001

A Two-Stage Decoder For Pragmatic Trellis-Coded M-Psk Modulation Using A Symbol Transformation, Robert H. Morelos-Zaragoza, Advait Mogre

Faculty Publications

A two-stage decoding procedure for pragmatic trellis-coded modulation (TCM) is introduced. It applies a transformation from the received I-channel and Q-channel samples onto points in a two-dimensional (2-D) signal space that contains a coset constellation. For pragmatic TCM over M-PSK signal sets with ν coded bits per symbol, ν=1, 2, the signal points in the coset constellations represent cosets of a B/QPSK signal subset-associated with the coded bits-in the original M-PSK signal constellation. A conventional Viterbi decoder operates on the transformed symbols to estimate the coded bits. After reencoding these bits, the uncoded bits are estimated in a second stage, …

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A Method Of Non-Data-Aided Carrier Recovery With Modulation Identification, Robert H. Morelos-Zaragoza, Kenta Umebayashi, Ryuji Kohno Jan 2001

A Method Of Non-Data-Aided Carrier Recovery With Modulation Identification, Robert H. Morelos-Zaragoza, Kenta Umebayashi, Ryuji Kohno

Faculty Publications

A non-data aided carrier recovery technique using modulation format identification is proposed. This technique can also be interpreted as a modulation identification method that is robust against static phase and frequency offsets. The performance of the proposed technique is studied and analytical expressions derived for the mean acquisition time to detect lock in the cases of M-PSK, M=2,4,8, and 16-QAM modulation, with respect to frequency offset and signal-to-noise ratio. The results are verified with Monte Carlo simulations. The main advantage of the proposed method lies in its simpler implementation and faster lock detection, when compared to conventional methods.

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