Open Access. Powered by Scholars. Published by Universities.®

Engineering Commons

Open Access. Powered by Scholars. Published by Universities.®

Articles 31 - 53 of 53

Full-Text Articles in Engineering

Modeling Micro-Porous Surfaces For Secondary Electron Emission Control To Suppress Multipactor, James M. Sattler, Ronald Coutu Jr., Robert A. Lake, Tod V. Laurvick, Tyson C. Back, Steven. B. Fairchild Aug 2017

Modeling Micro-Porous Surfaces For Secondary Electron Emission Control To Suppress Multipactor, James M. Sattler, Ronald Coutu Jr., Robert A. Lake, Tod V. Laurvick, Tyson C. Back, Steven. B. Fairchild

Faculty Publications

This work seeks to understand how the topography of a surface can be engineered to control secondary electron emission (SEE) for multipactor suppression. Two unique, semi-empirical models for the secondary electron yield (SEY) of a micro-porous surface are derived and compared. The first model is based on a two-dimensional (2D) pore geometry. The second model is based on a three-dimensional (3D) pore geometry. The SEY of both models is shown to depend on two categories of surface parameters: chemistry and topography. An important parameter in these models is the probability of electron emissions to escape the surface pores. This probability …


Electron Paramagnetic Resonance Study Of Neutral Mg Acceptors In Β-Ga2O3 Crystals, Brant E. Kananen, Larry E. Halliburton, Elizabeth M. Scherrer, K. T. Stevens, G. K. Foundos, K. B. Chang, Nancy C. Giles Aug 2017

Electron Paramagnetic Resonance Study Of Neutral Mg Acceptors In Β-Ga2O3 Crystals, Brant E. Kananen, Larry E. Halliburton, Elizabeth M. Scherrer, K. T. Stevens, G. K. Foundos, K. B. Chang, Nancy C. Giles

Faculty Publications

Electron paramagnetic resonance (EPR) is used to directly observe and characterize neutral Mg acceptors (Mg0Ga) in a β-Ga2O3 crystal. These acceptors, best considered as small polarons, are produced when the Mg-doped crystal is irradiated at or near 77 K with x rays. During the irradiation, neutral acceptors are formed when holes are trapped at singly ionized Mg acceptors (Mg−Ga). Unintentionally present Fe3+ (3d5) and Cr3+ (3d3) transition-metal ions serve as the corresponding electron traps. The hole is localized in a nonbonding p orbital on a threefold-coordinated oxygen ion …


On-Chip, High-Sensitivity Temperature Sensors Based On Dye-Doped Solid-State Polymer Microring Lasers, Lei Wan, Hengky Chandrahalim, Cong Chen, Qiushu Chen, Ting Mei, Yuji Oki, Naoya Nishimura, Lingjie Jay Guo, Xudong Fan Aug 2017

On-Chip, High-Sensitivity Temperature Sensors Based On Dye-Doped Solid-State Polymer Microring Lasers, Lei Wan, Hengky Chandrahalim, Cong Chen, Qiushu Chen, Ting Mei, Yuji Oki, Naoya Nishimura, Lingjie Jay Guo, Xudong Fan

Faculty Publications

We developed a chip-scale temperature sensor with a high sensitivity of 228.6 pm/°C based on a rhodamine 6G (R6G)-doped SU-8 whispering-gallery mode microring laser. The optical mode was largely distributed in a polymer core layer with a 30 μm height that provided detection sensitivity, and the chemically robust fused-silica microring resonator host platform guaranteed its versatility for investigating different functional polymer materials with different refractive indices. As a proof of concept, a dye-doped hyperbranched polymer (TZ-001) microring laser-based temperature sensor was simultaneously developed on the same host wafer and characterized using a free-space optics measurement setup. Compared to TZ-001, the …


Defect-Related Optical Absorption Bands In Cdsip2 Crystals, Elizabeth M. Scherrer, Brant T. Kananen, Eric M. Golden, F. Kenneth Hopkins, Kevin T. Zawilski, Peter G. Schunemann, Larry E. Halliburton, Nancy C. Giles Mar 2017

Defect-Related Optical Absorption Bands In Cdsip2 Crystals, Elizabeth M. Scherrer, Brant T. Kananen, Eric M. Golden, F. Kenneth Hopkins, Kevin T. Zawilski, Peter G. Schunemann, Larry E. Halliburton, Nancy C. Giles

Faculty Publications

When used as optical parametric oscillators, CdSiP2 crystals generate tunable output in the mid-infrared. Their performance, however, is often limited by unwanted optical absorption bands that overlap the pump wavelengths. A broad defect-related optical absorption band peaking near 800 nm, with a shoulder near 1 µm, can be photoinduced at room temperature in many CdSiP2 crystals. This absorption band is efficiently produced with 633 nm laser light and decays with a lifetime of ∼0.5 s after removal of the excitation light. The 800 nm band is accompanied by a less intense absorption band peaking near 1.90 µm. Data …


Dual Role Of Sb Ions As Electron Traps And Hole Traps In Photorefractive Sn2P2S6 Crystals, Brant E. Kananen, Eric M. Golden, Sergey A. Basun, D. R. Evans, A. A. Grabar, I. M. Stoika, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton Dec 2016

Dual Role Of Sb Ions As Electron Traps And Hole Traps In Photorefractive Sn2P2S6 Crystals, Brant E. Kananen, Eric M. Golden, Sergey A. Basun, D. R. Evans, A. A. Grabar, I. M. Stoika, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton

Faculty Publications

Doping photorefractive single crystals of Sn2P2S6 with antimony introduces both electron and hole traps. In as-grown crystals, Sb3+ (5s2) ions replace Sn2+ ions. These Sb3+ ions are either isolated (with no nearby perturbing defects) or they have a charge-compensating Sn2+ vacancy at a nearest-neighbor Sn site. When illuminated with 633 nm laser light, isolated Sb3+ ions trap electrons and become Sb2+ (5s25p1) ions. In contrast, Sb3+ ions with an adjacent Sn vacancy trap holes during illumination. The hole is primarily …


Identification Of The Zinc-Oxygen Divacancy In Zno Crystals, Maurio S. Holston, Eric M. Golden, Brant E. Kananen, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton Apr 2016

Identification Of The Zinc-Oxygen Divacancy In Zno Crystals, Maurio S. Holston, Eric M. Golden, Brant E. Kananen, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton

Faculty Publications

An electron paramagnetic resonance (EPR) spectrum in neutron-irradiated ZnO crystals is assigned to the zinc-oxygen divacancy. These divacancies are observed in the bulk of both hydrothermally grown and seeded-chemical-vapor-transport-grown crystals after irradiations with fast neutrons. Neutral nonparamagnetic complexes consisting of adjacent zinc and oxygen vacancies are formed during the irradiation. Subsequent illumination below ∼150 K with 442 nm laser light converts these (V2−Zn − V2+O)0 defects to their EPR-active state (VZn − V2+O)+ as electrons are transferred to donors. The resulting photoinduced S = 1/2 spectrum of the …


Fusion Of Renewable Ring Resonator Lasers And Ultrafast Laser Inscribed Photonic Waveguides, Hengky Chandrahalim, Stephen C. Rand, Xudong Fan Jan 2016

Fusion Of Renewable Ring Resonator Lasers And Ultrafast Laser Inscribed Photonic Waveguides, Hengky Chandrahalim, Stephen C. Rand, Xudong Fan

Faculty Publications

We demonstrated the monolithic integration of reusable and wavelength reconfigurable ring resonator lasers and waveguides of arbitrary shapes to out-couple and guide laser emission on the same fused-silica chip. The ring resonator hosts were patterned by a single-mask standard lithography, whereas the waveguides were inscribed in the proximity of the ring resonator by using 3-dimensional femtosecond laser inscription technology. Reusability of the integrated ring resonator – waveguide system was examined by depositing, removing, and re-depositing dye-doped SU-8 solid polymer, SU-8 liquid polymer, and liquid solvent (toluene). The wavelength reconfigurability was validated by employing Rhodamine 6G (R6G) and 3,3′-Diethyloxacarbocyanine iodide (CY3) …


Creep Behavior In Interlaminar Shear Of A Hi-Nicalon™/Sic-B4c Composite At 1200°C In Air And In Steam, Marina B. Ruggles-Wrenn, Matthew T. Pope Nov 2015

Creep Behavior In Interlaminar Shear Of A Hi-Nicalon™/Sic-B4c Composite At 1200°C In Air And In Steam, Marina B. Ruggles-Wrenn, Matthew T. Pope

Faculty Publications

Creep behavior in interlaminar shear of a non-oxide ceramic composite with a multilayered matrix was investigated at 1200C in laboratory air and in steam environment. The composite was produced via chemical vapor infiltration (CVI). The composite had an oxidation inhibited matrix, which consisted of alternating layers of silicon carbide and boron carbide and was reinforced with laminated Hi-NicalonTM fibers woven in a five-harness-satin weave. Fiber preforms had pyrolytic carbon fiber coating with boron carbon overlay applied. The interlaminar shear properties were measured. The creep behavior was examined for interlaminar shear stresses in the 16–22 MPa range. Primary …


Improved Terahertz Modulation Using Germanium Telluride (Gete) Chalcogenide Thin Films, Alexander H. Gwin, Christopher H. Kodama, Tod V. Laurvick, Ronald Coutu Jr., Philip F. Taday Jul 2015

Improved Terahertz Modulation Using Germanium Telluride (Gete) Chalcogenide Thin Films, Alexander H. Gwin, Christopher H. Kodama, Tod V. Laurvick, Ronald Coutu Jr., Philip F. Taday

Faculty Publications

We demonstrate improved terahertz (THz) modulation using thermally crystallized germanium telluride (GeTe) thin films. GeTe is a chalcogenide material that exhibits a nonvolatile, amorphous to crystalline phase change at approximately 200 °C, as well as six orders of magnitude decreased electrical resistivity. In this study, amorphous GeTe thin films were sputtered on sapphire substrates and then tested using THz time-domain spectroscopy (THz-TDS). The test samples, heated in-situ while collecting THz-TDS measurements, exhibited a gradual absorbance increase, an abrupt nonvolatile reduction at the transition temperature, followed by another gradual increase in absorbance. The transition temperature was verified by conducting similar thermal …


Interstitial Silicon Ions In Rutile Tio2 Crystals, Eric M. Golden, Nancy C. Giles, Shan Yang, Larry E. Halliburton Apr 2015

Interstitial Silicon Ions In Rutile Tio2 Crystals, Eric M. Golden, Nancy C. Giles, Shan Yang, Larry E. Halliburton

Faculty Publications

Electron paramagnetic resonance (EPR) is used to identify a new and unique photoactive silicon-related point defect in single crystals of rutile TiO2. The importance of this defect lies in its assignment to interstitial silicon ions and the unexpected establishment of silicon impurities as a major hole trap in TiO2. Principal g values of this new S=1/2 center are 1.9159, 1.9377, and 1.9668 with principal axes along the [¯110],[001], and [110] directions, respectively. Hyperfine structure in the EPR spectrum shows the unpaired spin interacting equally with two Ti nuclei and unequally with two Si nuclei. These silicon …


Theoretical Investigation Of Stabilities And Optical Properties Of Si12C12 Clusters, Xiaofeng F. Duan, Larry W. Burggraf Jan 2015

Theoretical Investigation Of Stabilities And Optical Properties Of Si12C12 Clusters, Xiaofeng F. Duan, Larry W. Burggraf

Faculty Publications

By sorting through hundreds of globally stable Si12C12 isomers using a potential surface search and using simulated annealing, we have identified low-energy structures. Unlike isomers knit together by Si–C bonds, the lowest energy isomers have segregated carbon and silicon regions that maximize stronger C–C bonding. Positing that charge separation between the carbon and silicon regions would produce interesting optical absorption in these cluster molecules, we used time-dependent density functional theory to compare the calculated optical properties of four isomers representing structural classes having different types of silicon and carbon segregation regions. Absorptions involving charge transfer between segregated …


Monolithic Optofluidic Ring Resonator Lasers Created By Femtosecond Laser Nanofabrication, Hengky Chandrahalim, Qiushu Chen, Ali A. Said, Mark Dugan, Xudong Fan Jan 2015

Monolithic Optofluidic Ring Resonator Lasers Created By Femtosecond Laser Nanofabrication, Hengky Chandrahalim, Qiushu Chen, Ali A. Said, Mark Dugan, Xudong Fan

Faculty Publications

We designed, fabricated, and characterized a monolithically integrated optofluidic ring resonator laser that is mechanically, thermally, and chemically robust. The entire device, including the ring resonator channel and sample delivery microfluidics, was created in a block of fused-silica glass using a 3-dimensional femtosecond laser writing process. The gain medium, composed of Rhodamine 6G (R6G) dissolved in quinoline, was flowed through the ring resonator. Lasing was achieved at a pump threshold of approximately 15 μJ/mm2. Detailed analysis shows that the Q-factor of the optofluidic ring resonator is 3.3 × 104, which is limited by both solvent …


Reconfigurable Solid-State Dye-Doped Polymer Ring Resonator Lasers, Hengky Chandrahalim, Xudong Fan Jan 2015

Reconfigurable Solid-State Dye-Doped Polymer Ring Resonator Lasers, Hengky Chandrahalim, Xudong Fan

Faculty Publications

This paper presents wavelength configurable on-chip solid-state ring lasers fabricated by a single-mask standard lithography. The single- and coupled-ring resonator hosts were fabricated on a fused-silica wafer and filled with 3,3′-Diethyloxacarbocyanine iodide (CY3), Rhodamine 6G (R6G) and 3,3′-Diethylthiadicarbocyanine iodide (CY5)-doped polymer as the reconfigurable gain media. The recorded lasing threshold was ~220 nJ/mm2 per pulse for the single-ring resonator laser with R6G, marking the lowest threshold shown by solid-state dye-doped polymer lasers fabricated with a standard lithography process on a chip. A single-mode lasing from a coupled-ring resonator system with the lasing threshold of ~360 nJ/mm2 per pulse …


Sulfur Vacancies In Photorefractive Sn2P2S6 Crystals, Eric M. Golden, Sergey A. Basun, A. A. Grabar, I. M. Stoika, Nancy C. Giles, D. R. Evans, Larry E. Halliburton Dec 2014

Sulfur Vacancies In Photorefractive Sn2P2S6 Crystals, Eric M. Golden, Sergey A. Basun, A. A. Grabar, I. M. Stoika, Nancy C. Giles, D. R. Evans, Larry E. Halliburton

Faculty Publications

A photoinduced electron paramagnetic resonance (EPR) spectrum in single crystals of Sn2P2S6 (SPS) is assigned to an electron trapped at a sulfur vacancy. These vacancies are unintentionally present in undoped SPS crystals and are expected to play an important role in the photorefractive behavior of the material. Nonparamagnetic sulfur vacancies are formed during the initial growth of the crystal. Subsequent illumination below 100 K with 442 nm laser light easily converts these vacancies to EPR-active defects. The resulting S = 1/2 spectrum shows well-resolved and nearly isotropic hyperfine interactions with two P ions and two Sn ions. Partially resolved interactions …


Copper Doping Of Zno Crystals By Transmutation Of 64Zn To 65Cu: An Electron Paramagnetic Resonance And Gamma Spectroscopy Study, Matthew C. Recker, John W. Mcclory, Maurio S. Holston, Eric M. Golden, Nancy C. Giles, Larry E. Halliburton Jun 2014

Copper Doping Of Zno Crystals By Transmutation Of 64Zn To 65Cu: An Electron Paramagnetic Resonance And Gamma Spectroscopy Study, Matthew C. Recker, John W. Mcclory, Maurio S. Holston, Eric M. Golden, Nancy C. Giles, Larry E. Halliburton

Faculty Publications

Transmutation of 64Zn to 65Cu has been observed in a ZnO crystal irradiated with neutrons. The crystal was characterized with electron paramagnetic resonance (EPR) before and after the irradiation and with gamma spectroscopy after the irradiation. Major features in the gamma spectrum of the neutron-irradiated crystal included the primary 1115.5 keV gamma ray from the 65Zn decay and the positron annihilation peak at 511 keV. Their presence confirmed the successful transmutation of 64Zn nuclei to 65Cu. Additional direct evidence for transmutation was obtained from the EPR of Cu2+ ions (where 63Cu and 65 …


Triplet Ground State Of The Neutral Oxygen-Vacancy Donor In Rutile Tio2, A. T. Brant, Eric M. Golden, Nancy C. Giles, Shan Yang, M. A. R. Sarker, S. Watauchi, M. Nagao, I. Tanaka, D. A. Tryk, A. Manivannan, Larry E. Halliburton Mar 2014

Triplet Ground State Of The Neutral Oxygen-Vacancy Donor In Rutile Tio2, A. T. Brant, Eric M. Golden, Nancy C. Giles, Shan Yang, M. A. R. Sarker, S. Watauchi, M. Nagao, I. Tanaka, D. A. Tryk, A. Manivannan, Larry E. Halliburton

Faculty Publications

Electron paramagnetic resonance (EPR) is used to investigate the triplet (S = 1) ground state of the neutral oxygen vacancy in bulk rutile TiO2 crystals. This shallow donor consists of an oxygen vacancy with two nearest-neighbor, exchange-coupled 3+ ions located along the [001] direction and equidistant from the vacancy. The spins of the two trapped electrons, one at each 3+ ion, align parallel to give the S = 1 state. These neutral oxygen vacancies are formed near 25 K in as-grown oxidized TiO2 crystals by illuminating with sub-band-gap 442 nm laser light. The angular dependence of the EPR …


A Clamped Dual-Ridged Waveguide Measurement System For The Broadband, Nondestructive Characterization Of Sheet Materials, Milo W. Hyde Iv, Michael J. Havrilla Oct 2013

A Clamped Dual-Ridged Waveguide Measurement System For The Broadband, Nondestructive Characterization Of Sheet Materials, Milo W. Hyde Iv, Michael J. Havrilla

Faculty Publications

A novel two-port probe which uses dual-ridged waveguides for the nondestructive, broadband characterization of sheet materials is presented. The new probe is shown to possess approximately 2 to 3 times the bandwidth of traditional coaxial and rectangular/circular waveguide probe systems while maintaining the structural robustness characteristic of rectangular/circular waveguide probe systems. The theoretical development of the probe is presented, namely, by applying Love’s equivalence theorem and enforcing the continuity of transverse fields at the dual-ridged waveguide apertures, a system of coupled magnetic field integral equations is derived. The system of coupled magnetic field integral equations is solved using the method …


Reversible Mn Segregation At The Polar Surface Of Lithium Tetraborate, Christina L. Dugan, Robert L. Hengehold, Stephen R. Mchale, Juan A. Colon Santana, John W. Mcclory, Volodymyr T. Adamiv, Yaroslav V. Burak, Ya B. Losovyj, Peter A. Dowben Apr 2013

Reversible Mn Segregation At The Polar Surface Of Lithium Tetraborate, Christina L. Dugan, Robert L. Hengehold, Stephen R. Mchale, Juan A. Colon Santana, John W. Mcclory, Volodymyr T. Adamiv, Yaroslav V. Burak, Ya B. Losovyj, Peter A. Dowben

Faculty Publications

We find Mn surface segregation for single crystals of Mn doped Li2B4O7, nominally Li1.95Mn0.05B4O7(001), but as the temperature increases, evidence of this Mn surface segregation diminishes significantly. At room temperature, the surface photovoltaic charging is significant for this pyroelectric material but is quenched at a temperature well below that seen for the undoped Li2B4O7 samples. The suppression of surface charging in the region of 120 °C that accompanies the temperature of Mn dissolution in the bulk of Li2B4 …


Ir Nonlinear Absorption Leading To Laser-Induced Damage In Ge & Gasb, Torrey J. Wagner, Matthew J. Bohn, Ronald A. Coutu Jr., L. P. Gonzales, J. M. Murray, K. L. Schepler, S. Guha Jun 2011

Ir Nonlinear Absorption Leading To Laser-Induced Damage In Ge & Gasb, Torrey J. Wagner, Matthew J. Bohn, Ronald A. Coutu Jr., L. P. Gonzales, J. M. Murray, K. L. Schepler, S. Guha

Faculty Publications

Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, we measure two-photon and free-carrier absorption coefficients for Ge and GaSb at 2.05 and 2.5 μm for the first time. Results agreed well with published theory. Single-shot damage thresholds were also measured at 2.5 μm and agreed well with modeled thresholds using experimentally determined parameters including nonlinear absorption coefficients and temperature dependent linear absorption. The damage threshold for a single-layer Al2O3 anti-reflective coating on Ge was 55% or 35% lower than the uncoated threshold for ps or ns pulses, respectively. Wavelength-dependant …


Complementary Metal-Oxide Semiconductor-Compatible Detector Materials With Enhanced 1550 Nm Responsivity Via Sn-Doping Of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis May 2011

Complementary Metal-Oxide Semiconductor-Compatible Detector Materials With Enhanced 1550 Nm Responsivity Via Sn-Doping Of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis

Faculty Publications

Previously developed methods used to grow Ge1−ySny alloys on Si are extended to Sn concentrations in the 1019−1020 cm−3 range. These concentrations are shown to be sufficient to engineer large increases in the responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same …


Measurement And Modeling Of Infrared Nonlinear Absorption Coefficients And Laser-Induced Damage Thresholds In Ge And Gasb, Torrey J. Wagner, Matthew J. Bohn, Ronald A. Coutu Jr., L. P. Gonzales, J. M. Murray, K. L. Schepler, S. Guha Oct 2010

Measurement And Modeling Of Infrared Nonlinear Absorption Coefficients And Laser-Induced Damage Thresholds In Ge And Gasb, Torrey J. Wagner, Matthew J. Bohn, Ronald A. Coutu Jr., L. P. Gonzales, J. M. Murray, K. L. Schepler, S. Guha

Faculty Publications

Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, we measure two-photon and free-carrier absorption coefficients for Ge and GaSb at 2.05 and 2.5 µm for the first time, to our knowledge. Results agreed well with published theory. Single-shot damage thresholds were also measured at 2.5 µm and agreed well with modeled thresholds using experimentally determined parameters including nonlinear absorption coefficients and temperature dependent linear absorption. The damage threshold for a single-layer Al2O3 anti-reflective coating on Ge was 55% or 35% lower than the uncoated threshold for picosecond or nanosecond …


The Electronic Structure And Secondary Pyroelectric Properties Of Lithium Tetraborate, Volodymyr T. Adamiv, Yaroslav V. Burak, David J. Wooten, John W. Mcclory, James C. Petrosky, Ihor Ketsman, Ya B. Losovyj, Peter A. Dowben, Jie Xiao Sep 2010

The Electronic Structure And Secondary Pyroelectric Properties Of Lithium Tetraborate, Volodymyr T. Adamiv, Yaroslav V. Burak, David J. Wooten, John W. Mcclory, James C. Petrosky, Ihor Ketsman, Ya B. Losovyj, Peter A. Dowben, Jie Xiao

Faculty Publications

We review the pyroelectric properties and electronic structure of Li2B4O7(110) and Li2B4O7(100) surfaces. There is evidence for a pyroelectric current along the [110] direction of stoichiometric Li2B4O7 so that the pyroelectric coefficient is nonzero but roughly 103 smaller than along the [001] direction of spontaneous polarization. Abrupt decreases in the pyroelectric coefficient along the [110] direction can be correlated with anomalies in the elastic stiffness contributing to the concept that the pyroelectric coefficient is not simply a vector but has qualities of …


Stimulated Brillouin Scattering Continuous Wave Phase Conjugation In Step-Index Fiber Optics, Steven M. Massey, Justin B. Spring, Timothy H. Russell Jul 2008

Stimulated Brillouin Scattering Continuous Wave Phase Conjugation In Step-Index Fiber Optics, Steven M. Massey, Justin B. Spring, Timothy H. Russell

Faculty Publications

Continuous wave (CW) stimulated Brillouin scattering (SBS) phase conjugation in step-index optical fibers was studied experimentally and modeled as a function of fiber length. A phase conjugate fidelity over 80% was measured from SBS in a 40 m fiber using a pinhole technique. Fidelity decreases with fiber length, and a fiber with a numerical aperture (NA) of 0.06 was found to generate good phase conjugation fidelity over longer lengths than a fiber with 0.13 NA. Modeling and experiment support previous work showing the maximum interaction length which yields a high fidelity phase conjugate beam is inversely proportional to the fiber …