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Design Of A 350 Kw Silicon Carbide Based 3-Phase Inverter With Ultra-Low Parasitic Inductance, Matthew Feurtado
Design Of A 350 Kw Silicon Carbide Based 3-Phase Inverter With Ultra-Low Parasitic Inductance, Matthew Feurtado
Graduate Theses and Dissertations
The objective of this thesis is to present a design for a low parasitic inductance, high power density 3-phase inverter using silicon-carbide power modules for traction application in the electric vehicles with a power rating of 350 kW. With the market share of electric vehicles continuing to grow, there is a great opportunity for wide bandgap semiconductors such as silicon carbide (SiC) to improve the efficiency and size of the motor drives in these applications. In order to accomplish this goal, careful design and selection of each component in the system for optimum performance from an electrical, mechanical, and thermal …
A Folded Cascode Operational Amplifier With Wide-Swing Current Mirrors And High Icmr, Designed With A 1.2-Micron Silicon-Carbide Process, Austin Gattis
Electrical Engineering Undergraduate Honors Theses
This thesis describes in detail the process of designing, simulating, and creating the layout for a modified folded cascode op-amp, fabricated with silicon carbide MOSFETS. The modifications consist of using a wide-swing current mirror to help deal with output voltage issues stemming from high threshold voltages in the silicon carbide process, as well as using a modification that allows for an increased input common mode range. The folded cascode op-amp uses silicon carbide transistors, as it is intended to be used for high temperature applications, ideally in the 25 C - 300 C range. It is designed to have 25 …
Gating Methods For High-Voltage Silicon Carbide Power Mosfets, Audrey Dearien
Gating Methods For High-Voltage Silicon Carbide Power Mosfets, Audrey Dearien
Graduate Theses and Dissertations
The objective of this thesis is to assess the challenges associated with driving Silicon Carbide (SiC) power devices, and to compare the potential gate drive methods for these devices which address those challenges. SiC power devices present many benefits that make them suitable for next generation automotive, power utility grid, and energy management applications. High efficiency, increased power density, and reliability at high-temperatures are some of the main benefits of SiC technology. However, the many challenges associated with these devices have prevented their adoption into industry applications. The argument is made in this thesis that the gate driver is a …
8 Bit Split Array Based Charge Scaling Digital To Analog Converter With Rail To Rail Buffered Output, Sai Kiran Akula
8 Bit Split Array Based Charge Scaling Digital To Analog Converter With Rail To Rail Buffered Output, Sai Kiran Akula
Graduate Theses and Dissertations
This thesis presents the design, simulation and layout of a silicon carbide (SiC) 8 bit split array charge scaling digital to analog convertor (DAC). The converter consists of the charge scaling capacitor chain with two operational trans-conductance amplifiers (op amp) in voltage follower configuration. The op amps used in the design have the input common mode ranges of 0 to 11.2 V and 4.7V to 14.5V respectively. Additional logic circuit topologies are designed, which help to switch the op amps when needed to provide a rail to rail unity gain at the output. As the design is based on the …