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Full-Text Articles in Engineering
Characterization Of Wide-Bandgap Sic Field Effect Transistors And Their Active Gate Driving Circuit In High Power Applications, Arijit Sengupta
Characterization Of Wide-Bandgap Sic Field Effect Transistors And Their Active Gate Driving Circuit In High Power Applications, Arijit Sengupta
Legacy Theses & Dissertations (2009 - 2024)
Silicon Carbide (SiC) devices are slowly becoming one of the most reliable choices for high power density, high switching frequency applications with higher efficiency than Gallium Nitride (GaN) and Silicon (Si) devices. For a wide range of applications, such as Electric Motor Drives, Switching Power Supplies, and Renewable Energy Circuits, SiC devices are being tested and are found to yield prominent results.In this research, the characterization of two similarly rated commercially available SiC devices - a trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and a cascoded Junction Field Effect Transistor (JFET) are done. It is followed by a comparative analysis of both …
Design Of A 350 Kw Silicon Carbide Based 3-Phase Inverter With Ultra-Low Parasitic Inductance, Matthew Feurtado
Design Of A 350 Kw Silicon Carbide Based 3-Phase Inverter With Ultra-Low Parasitic Inductance, Matthew Feurtado
Graduate Theses and Dissertations
The objective of this thesis is to present a design for a low parasitic inductance, high power density 3-phase inverter using silicon-carbide power modules for traction application in the electric vehicles with a power rating of 350 kW. With the market share of electric vehicles continuing to grow, there is a great opportunity for wide bandgap semiconductors such as silicon carbide (SiC) to improve the efficiency and size of the motor drives in these applications. In order to accomplish this goal, careful design and selection of each component in the system for optimum performance from an electrical, mechanical, and thermal …
The Hybridization Of A Graphene And Silicon Carbide Schottky Optoelectronic Device By The Incorporation Of A Lead Sulfide Quantum Dot Film, Joshua Letton
Theses and Dissertations
The work that follows examines the impact of lead sulfide quantum dots on a native epitaxial graphene (EG) SiC Schottky device, resulting in a hybrid optoelectronic device which presents a possible avenue towards a novel hybrid carbide-based Schottky solar cell. The active (n-type SiC) and contact (graphene) layers for the Schottky junction of the device were grown epitaxially using a novel technique incorporating tetrafluorosilane (TFS) as a precursor gas. The bare EG/SiC device was characterized based on its I-V behavior in dark and under illumination for both forward and reverse bias conditions. The initial characterization demonstrated the expected Schottky diode …
A Folded Cascode Operational Amplifier With Wide-Swing Current Mirrors And High Icmr, Designed With A 1.2-Micron Silicon-Carbide Process, Austin Gattis
Electrical Engineering Undergraduate Honors Theses
This thesis describes in detail the process of designing, simulating, and creating the layout for a modified folded cascode op-amp, fabricated with silicon carbide MOSFETS. The modifications consist of using a wide-swing current mirror to help deal with output voltage issues stemming from high threshold voltages in the silicon carbide process, as well as using a modification that allows for an increased input common mode range. The folded cascode op-amp uses silicon carbide transistors, as it is intended to be used for high temperature applications, ideally in the 25 C - 300 C range. It is designed to have 25 …
Gating Methods For High-Voltage Silicon Carbide Power Mosfets, Audrey Dearien
Gating Methods For High-Voltage Silicon Carbide Power Mosfets, Audrey Dearien
Graduate Theses and Dissertations
The objective of this thesis is to assess the challenges associated with driving Silicon Carbide (SiC) power devices, and to compare the potential gate drive methods for these devices which address those challenges. SiC power devices present many benefits that make them suitable for next generation automotive, power utility grid, and energy management applications. High efficiency, increased power density, and reliability at high-temperatures are some of the main benefits of SiC technology. However, the many challenges associated with these devices have prevented their adoption into industry applications. The argument is made in this thesis that the gate driver is a …
Plug-In Grid Compatible Next Generation Power Converters, Qianqian Jiao
Plug-In Grid Compatible Next Generation Power Converters, Qianqian Jiao
Theses and Dissertations
The utilization of the DC low voltage distribution opens new possibilities for network development. Community DC microgrid is considered as an efficient solution for providing clean energy for residential areas. The connection of the DC microgrid to the AC utility grid would need a power electronic based rectifier. Voltage Source Rectifier (VSR) and Current Source Rectifier (CSR) are considered as the two options for such application. This study compares the two topologies based on their power density and efficiency. Silicon Carbide (SiC) switches are used for designing the rectifiers to get better power density and efficiency. The proximity of the …
8 Bit Split Array Based Charge Scaling Digital To Analog Converter With Rail To Rail Buffered Output, Sai Kiran Akula
8 Bit Split Array Based Charge Scaling Digital To Analog Converter With Rail To Rail Buffered Output, Sai Kiran Akula
Graduate Theses and Dissertations
This thesis presents the design, simulation and layout of a silicon carbide (SiC) 8 bit split array charge scaling digital to analog convertor (DAC). The converter consists of the charge scaling capacitor chain with two operational trans-conductance amplifiers (op amp) in voltage follower configuration. The op amps used in the design have the input common mode ranges of 0 to 11.2 V and 4.7V to 14.5V respectively. Additional logic circuit topologies are designed, which help to switch the op amps when needed to provide a rail to rail unity gain at the output. As the design is based on the …
Modeling Of Sic Power Semiconductor Devices For Switching Converter Applications, Ruiyun Fu
Modeling Of Sic Power Semiconductor Devices For Switching Converter Applications, Ruiyun Fu
Theses and Dissertations
Thanks to recent progress in SiC technology, SiC JFETs, MOSFETs and Schottky diodes are now commercially available from several manufactories such as Cree, GeneSiC and Infineon. SiC devices hold the promise of faster switching speed compared to Si devices, which can lead to superior converter performance, because the converter can operate at higher switching frequencies with acceptable switching losses, so that passive filter size is reduced. However, the ultimate achievable switching speed is determined not only by internal semiconductor device physics, but also by circuit parasitic elements. Therefore, in order to accurately predict switching losses and actual switching waveforms, including …