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Full-Text Articles in Engineering
Technical And Economic Assessment Of Perovskite Solar Cells For Large Scale Manufacturing, Amir A. Asif, Rajendra Singh, Githin F. Alapatt
Technical And Economic Assessment Of Perovskite Solar Cells For Large Scale Manufacturing, Amir A. Asif, Rajendra Singh, Githin F. Alapatt
Publications
In this paper, we have carried out detailed technical and economic assessment of perovskite solar cells for large scale manufacturing. For ultra-small area of the order of 0.1 cm2, efficiency of 20% or so are reported. However, for area of 25 cm2, the efficiency is about 10%. Based on the photovoltaic module manufacturing requirements of no constraint on the supply of raw materials, low variability of every key process and process-induced defects, low cost of manufacturing, prospects for further cost reduction in the future, green manufacturing, and long-term reliability, there are absolutely no prospects of manufacturing …
Interstitial Silicon Ions In Rutile Tio2 Crystals, Eric M. Golden, Nancy C. Giles, Shan Yang, Larry E. Halliburton
Interstitial Silicon Ions In Rutile Tio2 Crystals, Eric M. Golden, Nancy C. Giles, Shan Yang, Larry E. Halliburton
Faculty Publications
Electron paramagnetic resonance (EPR) is used to identify a new and unique photoactive silicon-related point defect in single crystals of rutile TiO2. The importance of this defect lies in its assignment to interstitial silicon ions and the unexpected establishment of silicon impurities as a major hole trap in TiO2. Principal g values of this new S=1/2 center are 1.9159, 1.9377, and 1.9668 with principal axes along the [¯110],[001], and [110] directions, respectively. Hyperfine structure in the EPR spectrum shows the unpaired spin interacting equally with two Ti nuclei and unequally with two Si nuclei. These silicon …
Selective Area Deposited Blue Gan-Ingan Multiple-Quantum Well Light Emitting Diodes Over Silicon Substrates, J. W. Yang, A. Lunev, Grigory Simin, A. Chitnis, M. Shatalov, M. Asif Khan, Joseph E. Van Nostrand, R. Gaska
Selective Area Deposited Blue Gan-Ingan Multiple-Quantum Well Light Emitting Diodes Over Silicon Substrates, J. W. Yang, A. Lunev, Grigory Simin, A. Chitnis, M. Shatalov, M. Asif Khan, Joseph E. Van Nostrand, R. Gaska
Grigory Simin
We report on fabrication and characterization of blue GaN–InGaN multi-quantum well (MQW)light-emitting diodes(LEDs) over (111) silicon substrates. Device epilayers were fabricated using unique combination of molecular beam epitaxy and low-pressure metalorganic chemical vapor depositiongrowth procedure in selective areas defined by openings in a SiO2mask over the substrates. This selective area deposition procedure in principle can produce multicolor devices using a very simple fabrication procedure. The LEDs had a peak emission wavelength of 465 nm with a full width at half maximum of 40 nm. We also present the spectral emission data with the diodes operating up to 250 …
Performance Optimization Of Lateral-Mode Thin-Film Piezoelectric-On-Substrate Resonant Systems, Hedy Fatemi
Performance Optimization Of Lateral-Mode Thin-Film Piezoelectric-On-Substrate Resonant Systems, Hedy Fatemi
Electronic Theses and Dissertations
The main focus of this dissertation is to characterize and improve the performance of thin-film piezoelectric-on-substrate (TPoS) lateral-mode resonators and filters. TPoS is a class of piezoelectric MEMS devices which benefits from the high coupling coefficient of the piezoelectric transduction mechanism while taking advantage of superior acoustic properties of a substrate. The use of lateral-mode TPoS designs allows for fabrication of dispersed-frequency filters on a single substrate, thus significantly reducing the size and manufacturing cost of devices. TPoS filters also offer a lower temperature coefficient of frequency, and better power handling capability compared to rival technologies all in a very …
Study Of Millisecond Laser Annealing On Ion Implanted Soi And Application To Scaled Finfet Technology, Tyler J. Michalak
Study Of Millisecond Laser Annealing On Ion Implanted Soi And Application To Scaled Finfet Technology, Tyler J. Michalak
Legacy Theses & Dissertations (2009 - 2024)
The fabrication of metal-oxide-semiconductor field effect transistors (MOSFET) requires the engineering of low resistance, low leakage, and extremely precise p-n junctions. The introduction of finFET technology has introduced new challenges for traditional ion implantation and annealing techniques in junction design as the fin widths continue to decrease for improved short channel control. This work investigates the use of millisecond scanning laser annealing in the formation of n-type source/drain junctions in next generation MOSFET.