Engineering Commons^™

Numerical Calculation Of The Charge State And Electrostatic Potential Of A Binary Nanocluster Structure With Si2zns Cells In A Cubic Lattice Of Crystalline Silicon With A Diamond Structure, N.F. Zikrillaev, F.Q. Shakarov, M. K. Khaqqulov

Technical science and innovation

Numerical calculation of electronic and atomic structures of complex systems of crystalline and transitional nano- and micro-sizes by using quantum physical methods will make it possible to forecast new properties of crystalline silicon with various concentrations of clusters of impurity atoms, structural arrangement at lattice sites and types of clusters. The quantum-chemical method was used to calculate the required characteristics of the cell, i.e. the charge state and electrostatic potential for the base matrix of Si (silicon) and silicon with an impurity cluster consisting of 3 tetrahedral cells type- Si₂ZnS in the base lattice of Si. Calculation of …

Fabrication Of Silicon Microneedles For Dermal Interstitial Fluid Extraction In Human Subjects, Caleb A. Berry

Electronic Theses and Dissertations

The goal of this project is to design and develop a fabrication process for silicon microneedle arrays to extract dermal interstitial fluid (ISF) from human skin. ISF is a cell- free, living tissue medium that is known to contain many of the same, clinical biomarkers of general health, stress response and immune status as in blood. However, a significant barrier to adoption of ISF as a diagnostic matrix is the lack of a rapid, minimally invasive method of access and collection for analysis. Microfabricated chips containing arrays of microneedles that can rapidly and painlessly access and collect dermal ISF for …

Influence Of Heat Treatment On The Behaviorof Deep Levels In Silicon Doped By Tungsten, Shokhrukh Kh. Daliev, Abdugofur T. Mamadalimov, Sayfullo S. Nasriddinov, Anifa D. Paluanova

Euroasian Journal of Semiconductors Science and Engineering

By means of Deep Level Transient Spectroscopy the kinetics of the annealing of the levels of tungsten in silicon during heat treatment in the temperature range 150÷4000С was studied. It was found a non-monotonic change in the concentration of deep levels Ec-0.30 eV and Ec-0.39 eV under isothermal annealing: the concentrations of both levels at short times increase, then the concentration level of Ec-0.30 eV sharply decreases, and the reduction of the concentration of deep level Ec-0.39 eV is much slower.

Infrared Spectroscopy Of Silicon Doped By Stannum And Manganese, Sharifa B. Utamuradova, Ravshanbek M. Ergashev, Khusniddin J. Matchanov

Euroasian Journal of Semiconductors Science and Engineering

The processes of defect formation in silicon doped by tin and manganese and their interaction with uncontrolled impurities were studied by infrared spectroscopy.It was found that the presence of impurities of transition and isovalent elements leads to a technological decrease in the concentration of process impurities – oxygen and carbon. It was found that the introduction of manganese in Si leads to a strong decrease in the concentration of interstitial optically active oxygen Noopt: in rapidly cooled samples Si there is a decrease of Noopt by 50% compared to the original Si.

Influence Of Impurities Of Refractory Elements On The Inefficiency Of Charge Transfer In Charged Communication Devices, Abdugafur T. Mamadalimov, Shakhrukh Kh. Daliev

Euroasian Journal of Semiconductors Science and Engineering

The influence of impurities of refractory elements on the inefficiency of charge transfer in charge-coupled devices is investigated. Found that the magnitude of the inefficiency of transfer  directly proportional to the density of surface States and the density of surface States in the CCD registers, with the resulting n losses n ≤ 0.1 depends on the type specially introduced impurities. It is shown that in CCD structures doped with impurities Ti, Zr and Hf relative to the control structures, the charge loss is greater, and in doped with impurities W and Mo, the charge loss is less.

Influence Of Rhodium And Iridium Impurity Atoms On The Capacitive Characteristics Of Si-Siо2 Structures, Khojakbar S. Daliev, Shakhriyor Kh. Yulchiev, Xotamjon J. Mansurov

Euroasian Journal of Semiconductors Science and Engineering

It was found that the doping of the semiconductor substrate with Rh and Ir atoms leads to the increase in the density of surface states at the Si – SiO2 interface. It is determined that the surface states, due to the presence of an impurity Rh and Ir are effective generation centers.

Influence Of Heat Treatment On The Behavior Of Deep Levels In Silicon Doped By Tungsten, Shokhrukh Kh. Daliev, Abdugofur T. Mamadalimov, Sayfullo S. Nasriddinov, Anifa D. Paluanova

Euroasian Journal of Semiconductors Science and Engineering

By means of Deep Level Transient Spectroscopy the kinetics of the annealing of the levels of tungsten in silicon during heat treatment in the temperature range 150÷4000С was studied. It was found a non-monotonic change in the concentration of deep levels Ec-0.30 eV and Ec-0.39 eV under isothermal annealing: the concentrations of both levels at short times increase, then the concentration level of Ec-0.30 eV sharply decreases, and the reduction of the concentration of deep level Ec-0.39 eV is much slower.

Infrared Spectroscopy Of Silicon Doped By Stannum And Manganese, Sharifa B. Utamuradova, Ravshanbek M. Ergashev, Khusniddin J. Matchanov

Euroasian Journal of Semiconductors Science and Engineering

The processes of defect formation in silicon doped by tin and manganese and their interaction with uncontrolled impurities were studied by infrared spectroscopy.It was found that the presence of impurities of transition and isovalent elements leads to a technological decrease in the concentration of process impurities – oxygen and carbon. It was found that the introduction of manganese in Si leads to a strong decrease in the concentration of interstitial optically active oxygen Noopt: in rapidly cooled samples Si there is a decrease of Noopt by 50% compared to the original Si.

Capacitive Spectroscopy Of Defects In Semiconductors, Doped By Atoms Of Gadolinium, Shoakhriyor B. Norkulov, Khodjakbar S. Daliev, Makhmud Sh. Dehkanov, Uktam K. Erugliev

Euroasian Journal of Semiconductors Science and Engineering

The processes of formation of defects in silicon, doped by gadolinium are investigated by the method of DLTS. It is shown that in diffusion the introduction of Gd in the Si leads to the formation of deep levels with ionization energies Ec–0.23 eV, Ec–0.35 eV, Ec–0.41 eV and Ec–0.54 eV and a capture cross section of electrons n: 410-17cm-2, 210-15 cm2, 1.110-16 cm2 and 1.510-15 cm2, respectively, and in samples p-Si found only one level with Ev+0.32 eV.

Design, Layout, And Testing Of Sige Apds Fabricated In A Bicmos Process, Dane Laurence Gentry

UNLV Theses, Dissertations, Professional Papers, and Capstones

This Thesis is concerned with the design, layout, and testing of avalanche photodiodes (APDs). APDs are a type of photodetector and, thus, convert light signals into electrical signals (current or voltage). APDs can be fabricated using silicon (Si). In this Thesis, however, three integrated circuit (IC) chips containing various silicon-germanium (SiGe) APDs with different sizes, structures, and geometries were designed, laid out, and fabricated using the Austriamicrosystems (AMS) 0.35μm SiGe BiCMOS (S35) process. This was done in order to compare SiGe APDs to Si only APDs and investigate the hypothesis that SiGe APDs are capable of detecting longer wavelengths than …

Comparison Of Organic And Inorganic Solar Photovoltaic Systems, Khulan Orgil

Electrical Engineering

This senior project report addresses the consumer’s need for accurate and easily accessible information when making a solar panel purchasing decision. Thus, the project analyzes and compares the costs and benefits of organic and inorganic photovoltaic systems during their life cycle. The cost comparison includes analysis of the environmental and economic costs of materials, production, installation, and disposal. The benefit comparison includes analysis of the economic, environmental, and social benefits accrued during the system’s lifetime. With the project’s data, consumers can make more informed decisions to fit their specific needs.

Application Of Silicon Nanohair Textured P-N Junctions In A Photovoltaic Device, Michael Small

Electronic Theses and Dissertations

The goal of this project is to design and develop a fabrication process for a silicon photovoltaic device which incorporates a nanohair textured p-n junction. The silicon nanowires are etched into a silicon wafer, comprising an epitaxial p-layer on n-substrate, via metal-assisted chemical etching (MACE). The resulting nanowires contain p-n junctions that lie along the length of the vertical nanowires. This construct has the potential to increase the optical bandwidth of a silicon photovoltaic device by allowing a greater amount of short wavelength light to reach the junction. In addition, the MACE method of nanofabrication has the potential for decreasing …

Ion-Sensitive Field-Effect Transistors With Micropillared Gates For Measuring Cell Ion Exchange At Molecular Levels, Mohammad G. Abdallah, Rayan Khan, Christian Garcia, Young-Tae Kim, Samir M. Iqbal

Electrical and Computer Engineering Faculty Publications and Presentations

The detection of small concentrations of cancer cells before cancer takes over the primary organ completely, or metastasizes to other areas of the body is important for early screening of cancer. One approach to address cancer early screening is through cell ion exchange bioelectricity, which characterizes voltage potential in non-neuronal cells to regulate shape changing, proliferation, differentiation, migration, and cancer formation. Herein, novel ion-sensitive field-effective transistor (ISFET) modality is shown to measure cell behavior during the change of cell properties at molecular levels. ISFETs produce low resistance signals and consume low power. The small size of ISFETs enables miniature diagnosis …

Technical And Economic Assessment Of Perovskite Solar Cells For Large Scale Manufacturing, Amir A. Asif, Rajendra Singh, Githin F. Alapatt

Amir Asif

In this paper, we have carried out detailed technical and economic assessment of perovskite solar cells for large scale manufacturing. For ultra-small area of the order of 0.1 cm², efficiency of 20% or so are reported. However, for area of 25 cm², the efficiency is about 10%. Based on the photovoltaic module manufacturing requirements of no constraint on the supply of raw materials, low variability of every key process and process-induced defects, low cost of manufacturing, prospects for further cost reduction in the future, green manufacturing, and long-term reliability, there are absolutely no prospects of manufacturing …

Characterization Of Flexible Hybrid Electronics Using Stretchable Silver Ink And Ultra-Thin Silicon Die, Joshua A. Ledgerwood

Master's Theses

Flexible Hybrid Electronics (FHEs) offer many advantages to the future of wearable technology. By combining the dynamic performance of conductive inks, and the functionality of ultra-thinned, traditional IC technology, new FHE devices allow for development of applications previously excluded by relying on a specific type of electronics technology.

The characterization and reliability analysis of stretchable conductive inks paired with ultra-thin silicon die in theµm range was conducted. A silver based ink designed to be stretchable was screen printed on a TPU substrate and cured using box oven, conveyor convection oven, and photonic curing processes. Reliability tests were conducted including a …

Thermoreflectance Technique For Thermal Properties Measurement Of Micro/Nanoscale Cantilever Beams, Mirza M. Elahi

Electrical and Computer Engineering ETDs

Thermal property analysis of thin film materials on a semi-infinite substrate is a very important area of research in last few decades due to the deviation of their properties from its bulk values and measurement technique plays very important role to be free from the effect of interface conductance, surface impurities, convective and radiative losses and fabrication tolerances. Non-contact optical measurement technique drew attention to be applicable to measure thermal properties using pump-probe thermoreflectance where short pulse Laser beam applied to the film to avoid heat loss with the inclusion of the interfacial conductance and extract thermal diffusivity which is …

Reduction In Recombination Current Density In Boron Doped Silicon Using Atomic Hydrogen, Matthew Garett Young

Graduate Theses and Dissertations

The solar industry has grown immensely in recent years and has reached a point where solar energy has now become inexpensive enough that it is starting to emerge as a mainstream electrical generation source. However, recent economic analysis has suggested that for solar to become a truly wide spread source of electricity, the costs still need to plummet by a factor of 8x. This demands new and innovative concepts to help lower such cost. In pursuit of this goal, this dissertation examines the use of atomic hydrogen to lessen the recombination current density in the boron doped region of n-type …

Direct Bandgap Cross-Over Point Of Ge1-YSnY Grown On Si Estimated Through Temperature-Dependent Photoluminescence Studies, Thomas R. Harris, Mee-Yi Ryu, Yung Kee Yeo, Buguo Wang, C. L. Senaratne

Faculty Publications

Epitaxial Ge_1-ySn_y (y = 0%–7.5%) alloys grown on either Si or Ge-buffered Si substrates by chemical vapor deposition were studied as a function of Sn content using temperature-dependent photoluminescence (PL). PL emission peaks from both the direct bandgap (Γ-valley) and the indirect bandgap (L-valley) to the valence band (denoted by E_D and EID, respectively) were clearly observed at 125 and 175 K for most Ge_1-ySn_y samples studied. At 300 K, however, all of the samples exhibited dominant E_D emission with either very weak or no measureable E_ID emission. At 10 K, …

Laser Direct Written Silicon Nanowires For Electronic And Sensing Applications, Woongsik Nam

Open Access Dissertations

Silicon nanowires are promising building blocks for high-performance electronics and chemical/biological sensing devices due to their ultra-small body and high surface-to-volume ratios. However, the lack of the ability to assemble and position nanowires in a highly controlled manner still remains an obstacle to fully exploiting the substantial potential of nanowires. Here we demonstrate a one-step method to synthesize intrinsic and doped silicon nanowires for device applications. Sub-diffraction limited nanowires as thin as 60 nm are synthesized using laser direct writing in combination with chemical vapor deposition, which has the advantages of in-situ doping, catalyst-free growth, and precise control of position, …

Design Of Ferroelectric Mems Energy Harvesting Devices, Noah T. Blach, Robert A. Lake, Ronald A. Coutu Jr.

Electrical and Computer Engineering Faculty Research and Publications

Waste heat is a widely available but little used source of power. Converting a thermal gradient into electricity is conventionally done using the Seebeck effect, but devices that use this effect are naturally inefficient. An alternate approach uses microelectromechanical systems (MEMS) to generate movement and time-varying temperature from a constant temperature gradient. Ferroelectric materials can harvest electricity from moving structures and temperature variations. This concept was realized using traditional silicon microprocessing techniques. A silicon on insulator (SOI) wafer was backside Deep Reactive Ion Etched (DRIE) to form a one mm² by 7 micron thick silicon/silicon dioxide membrane. Lead zirconate …

Technical And Economic Assessment Of Perovskite Solar Cells For Large Scale Manufacturing, Amir A. Asif, Rajendra Singh, Githin F. Alapatt

Publications

In this paper, we have carried out detailed technical and economic assessment of perovskite solar cells for large scale manufacturing. For ultra-small area of the order of 0.1 cm², efficiency of 20% or so are reported. However, for area of 25 cm², the efficiency is about 10%. Based on the photovoltaic module manufacturing requirements of no constraint on the supply of raw materials, low variability of every key process and process-induced defects, low cost of manufacturing, prospects for further cost reduction in the future, green manufacturing, and long-term reliability, there are absolutely no prospects of manufacturing …

Interstitial Silicon Ions In Rutile Tio2 Crystals, Eric M. Golden, Nancy C. Giles, Shan Yang, Larry E. Halliburton

Faculty Publications

Electron paramagnetic resonance (EPR) is used to identify a new and unique photoactive silicon-related point defect in single crystals of rutile TiO₂. The importance of this defect lies in its assignment to interstitial silicon ions and the unexpected establishment of silicon impurities as a major hole trap in TiO₂. Principal g values of this new S=1/2 center are 1.9159, 1.9377, and 1.9668 with principal axes along the [¯110],[001], and [110] directions, respectively. Hyperfine structure in the EPR spectrum shows the unpaired spin interacting equally with two Ti nuclei and unequally with two Si nuclei. These silicon …

Selective Area Deposited Blue Gan-Ingan Multiple-Quantum Well Light Emitting Diodes Over Silicon Substrates, J. W. Yang, A. Lunev, Grigory Simin, A. Chitnis, M. Shatalov, M. Asif Khan, Joseph E. Van Nostrand, R. Gaska

Grigory Simin

We report on fabrication and characterization of blue GaN–InGaN multi-quantum well (MQW)light-emitting diodes(LEDs) over (111) silicon substrates. Device epilayers were fabricated using unique combination of molecular beam epitaxy and low-pressure metalorganic chemical vapor depositiongrowth procedure in selective areas defined by openings in a SiO₂mask over the substrates. This selective area deposition procedure in principle can produce multicolor devices using a very simple fabrication procedure. The LEDs had a peak emission wavelength of 465 nm with a full width at half maximum of 40 nm. We also present the spectral emission data with the diodes operating up to 250 …

Performance Optimization Of Lateral-Mode Thin-Film Piezoelectric-On-Substrate Resonant Systems, Hedy Fatemi

Electronic Theses and Dissertations

The main focus of this dissertation is to characterize and improve the performance of thin-film piezoelectric-on-substrate (TPoS) lateral-mode resonators and filters. TPoS is a class of piezoelectric MEMS devices which benefits from the high coupling coefficient of the piezoelectric transduction mechanism while taking advantage of superior acoustic properties of a substrate. The use of lateral-mode TPoS designs allows for fabrication of dispersed-frequency filters on a single substrate, thus significantly reducing the size and manufacturing cost of devices. TPoS filters also offer a lower temperature coefficient of frequency, and better power handling capability compared to rival technologies all in a very …

Study Of Millisecond Laser Annealing On Ion Implanted Soi And Application To Scaled Finfet Technology, Tyler J. Michalak

Legacy Theses & Dissertations (2009 - 2024)

The fabrication of metal-oxide-semiconductor field effect transistors (MOSFET) requires the engineering of low resistance, low leakage, and extremely precise p-n junctions. The introduction of finFET technology has introduced new challenges for traditional ion implantation and annealing techniques in junction design as the fin widths continue to decrease for improved short channel control. This work investigates the use of millisecond scanning laser annealing in the formation of n-type source/drain junctions in next generation MOSFET.

Influence Of Oxygen On Electronic Properties Of Nanocrystalline Silicon, Shantan Kajjam

Shantan Kajjam

Nanocrystalline Silicon (nc-Si) is an important material for photovoltaic device applications. Its excellent absorption, low defect levels and many other interesting properties help build high efficiency solar cells. Its structure is very complex and is sensitive to contaminants and fabrication processes. It needs a careful study so that a maximum outcome can be attained from the material. Nc-Si is highly prone to be defective and oxygen is one of the major sources of the defects. In this thesis, systematic analysis of the fundamental properties of oxygen doped & boron compensated nc-Si are illustrated. Thin film solar cells were fabricated using …

Observation Of Tunneling Effects In Lateral Nanowire Pn Junctions, Sri Purwiyanti, Arief Udhiarto, Daniel Moraru, Takeshi Mizuno, Djoko Hartanto, Michiharu Tabe

Makara Journal of Technology

As electronic device dimensions are continuously reduced, applied bias conditions significantly change and the transport mechanisms must be reconsidered. Tunneling devices are promising for scaled-down electronics because of expected high-speed operation and relatively low bias. In this work, we investigated the tunneling features in silicon-oninsulator lateral nanowire pn junction and pin junction devices. By controlling the substrate voltage, tunneling features can be observed in the electrical characteristics. We found that the minimum substrate voltage required for tunneling to occur in pn junctions is higher as compared with pin junctions. The main cause of these effects relies in the difference between …

Compositional Model Checking Of Concurrent Systems, Hao Zheng, Zhen Zhang, Chris J. Myers, Emmanuel Rodriguez, Yingying Zhang

Electrical and Computer Engineering Faculty Publications

This paper presents a compositional framework to address the state explosion problem in model checking of concurrent systems. This framework takes as input a system model described as a network of communicating components in a high-level description language, finds the local state transition models for each individual component where local properties can be verified, and then iteratively reduces and composes the component state transition models to form a reduced global model for the entire system where global safety properties can be verified. The state space reductions used in this framework result in a reduced model that contains the exact same …

A Novel On-Chip Three-Dimensional Micromachined Calorimeter With Fully Enclosed And Suspended Thin-Film Chamber For Thermal Characterization Of Liquid Samples, Benyamin Davaji, Hye Jeong Bak, Woo-Jin Chang, Chung-Hoon Lee

Electrical and Computer Engineering Faculty Research and Publications

A microfabricated calorimeter (μ-calorimeter) with an enclosed reaction chamber is presented. The 3D micromachined reaction chamber is capable of analyzing liquid samples with volume of 200 nl. The thin film low-stress silicon nitride membrane is used to reduce thermal mass of the calorimeter and increase the sensitivity of system. The μ-calorimeter has been designed to perform DC and AC calorimetry, thermal wave analysis, and differential scanning calorimetry. The μ-calorimeter fabricated with an integrated heater and a temperature sensor on opposite sides of the reaction chamber allows to perform thermal diffusivity and specific heat measurements on liquid samples with same device. …

Metal-Assisted Etching Of Silicon Molds For Electroforming, Ralu Divan, Dan Rosenthal '14, Karim Ogando, Leonidas E. Ocola, Daniel Rosenmann, Nicolaie Moldovan

Student Publications & Research

Ordered arrays of high-aspect-ratio micro/nanostructures in semiconductors stirred a huge scientific interest due to their unique one-dimensional physical morphology and the associated electrical, mechanical, chemical, optoelectronic, and thermal properties. Metal-assisted chemical etching enables fabrication of such high aspect ratio Si nanostructures with controlled diameter, shape, length, and packing density, but suffers from structure deformation and shape inconsistency due to uncontrolled migration of noble metal structures during etching. Hereby the authors prove that a Ti adhesion layer helps in stabilizing gold structures, preventing their migration on the wafer surface while not impeding the etching. Based on this finding, the authors demonstrate …