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University of Arkansas, Fayetteville

Molecular beam epitaxy (MBE)

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Investigation Of Negative Differential Resistance Phenomena In Quantum Well Heterostructures, Nazariy Andrushchak May 2012

Investigation Of Negative Differential Resistance Phenomena In Quantum Well Heterostructures, Nazariy Andrushchak

Graduate Theses and Dissertations

Increasing interest in entirely new possibilities for quantum mechanical description of carriers transport is becoming more evident with the developing advancements in epitaxial growth technique. Consequently, molecular beam epitaxy (MBE) technique is considered to be the most precise technique that allows the growth of ultra-thin layers of different compositions.

Those structures can be designed to investigate the wave-nature of carriers, which broadens the possibilities in device design and fabrication for a specific area. In this thesis the fundamental study of the real space charge transfer (RST) mechanism that took place in quantum well heterostructures and led to the negative differential …