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Full-Text Articles in Engineering Physics
Targeted Germanium Ion Irradiation Of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistors, Melanie E. Mace
Targeted Germanium Ion Irradiation Of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistors, Melanie E. Mace
Theses and Dissertations
Microscale beams of germanium ions were used to target different locations of aluminum galliumnitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs) to determine location dependent radiation effects. 1.7 MeV Ge ions were targeted at the gap between the gate and the drain to observe displacement damage effects while 47 MeV Ge ions were targeted at the gate to observe ionization damage effects. Electrical data was taken pre, during, and post irradiation. To separate transient from permanent degradation, the devices were characterized after a room temperature anneal for at least 30 days. Optical images were also analyzed pre and post irradiation. …
Fourier Transform Analysis Of Terahertz Radiation, Chikaodira N. Okpo
Fourier Transform Analysis Of Terahertz Radiation, Chikaodira N. Okpo
Electrical & Computer Engineering Theses & Dissertations
Advances in terahertz radiation (T-rays) technology have great promise in various technological areas ranging from medical technology, imaging technology and accelerator technology. At Thomas Jefferson Laboratory, the Free Electron Laser division (FEL) produces very powerful beam of laser light by accelerating electrons in bunches along a beamline. This laser light absorbs and releases energy at various wavelengths. The new FEL upgrade led to the production of very bright terahertz (THz) radiation with an average power of 1 00watts which is about 100,000 times brighter than those produced elsewhere. These T-rays have very significant applications in the Laboratory. The most significant …