Open Access. Powered by Scholars. Published by Universities.®
- Discipline
Articles 1 - 3 of 3
Full-Text Articles in Condensed Matter Physics
Comment On: 'Depolarization Corrections To The Coercive Field In Thin-Film Ferroelectrics', Stephen Ducharme, Vladimir Fridkin
Comment On: 'Depolarization Corrections To The Coercive Field In Thin-Film Ferroelectrics', Stephen Ducharme, Vladimir Fridkin
Stephen Ducharme Publications
The Letter by Dawber et al. [J. Phys.: Condens. Matter 15 L393 (2003)] notes that incomplete screening in the electrodes of a ferroelectric capacitor can result in an underestimate for the true coercive field in films of nanometer thickness. We show that their estimate of the magnitude of this correction it too large in the case of ferroelectric copolymer Langmuir- Blodgett films and, as a result, invalidates the claim that finite-size scaling of the ferroelectric coercive field is evident in films thinner than 15 nm.
Ferroelectricity In Free Niobium Clusters, Ramiro Moro, Xiaoshan Xu, Shuangye Yin, Walt A. De Heer
Ferroelectricity In Free Niobium Clusters, Ramiro Moro, Xiaoshan Xu, Shuangye Yin, Walt A. De Heer
Xiaoshan Xu Papers
Electric deflections of gas-phase, cryogenically cooled, neutral niobium clusters [NbN; number of atoms (N) = 2 to 150, temperature (T) = 20 to 300 kelvin], measured in molecular beams, show that cold clusters may attain an anomalous component with very large electric dipole moments. In contrast, room-temperature measurements show normal metallic polarizabilities. Characteristic energies kBTG(N) [Boltzmann constant kB times a transition temperature TG(N)] are identified, below which the ferroelectric-like state develops. Generally, TG decreases [110 > TG(N) > 10K] as …
Spin-Dependent Tunneling In Magnetic Tunnel Junctions, Evgeny Y. Tsymbal, O. N. Mryasov, Patrick R. Leclair
Spin-Dependent Tunneling In Magnetic Tunnel Junctions, Evgeny Y. Tsymbal, O. N. Mryasov, Patrick R. Leclair
Evgeny Tsymbal Publications
The phenomenon of electron tunneling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunneling in magnetic tunnel junctions (MTJs) has recently aroused enormous interest and has developed in a vigorous field of research. The large tunneling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible applications in non-volatile random access memories and next-generation magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of spindependent tunneling. In this review article we present an …