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Articles 1 - 5 of 5
Full-Text Articles in Condensed Matter Physics
Plasmonic Waveguides To Enhance Quantum Electrodynamic Phenomena At The Nanoscale, Ying Li, Christos Argyropoulos
Plasmonic Waveguides To Enhance Quantum Electrodynamic Phenomena At The Nanoscale, Ying Li, Christos Argyropoulos
Department of Electrical and Computer Engineering: Faculty Publications
The emerging field of plasmonics can lead to enhanced light-matter interactions at extremely nanoscale regions. Plasmonic (metallic) devices promise to efficiently control both classical and quantum properties of light. Plasmonic waveguides are usually used to excite confined electromagnetic modes at the nanoscale that can strongly interact with matter. The analysis of these nanowaveguides exhibits similarities with their low frequency microwave counterparts. In this article, we review ways to study plasmonic nanostructures coupled to quantum optical emitters from a classical electromagnetic perspective. These quantum emitters are mainly used to generate single-photon quantum light that can be employed as a quantum bit …
Free Charge Carrier Properties In Two-Dimensional Materials And Monoclinic Oxides Studied By Optical Hall Effect, Sean Knight
Free Charge Carrier Properties In Two-Dimensional Materials And Monoclinic Oxides Studied By Optical Hall Effect, Sean Knight
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
In this dissertation, optical Hall effect (OHE) measurements are used to determine the free charge carrier properties of important two-dimensional materials and monoclinic oxides. Two-dimensional material systems have proven useful in high-frequency electronic devices due to their unique properties, such as high mobility, which arise from their two-dimensional nature. Monoclinic oxides exhibit many desirable characteristics, for example low-crystal symmetry which could lead to anisotropic carrier properties. Here, single-crystal monoclinic gallium oxide, an AlInN/GaN-based high-electron-mobility transistor (HEMT) structure, and epitaxial graphene are studied as examples. To characterize these material systems, the OHE measurement technique is employed. The OHE is a physical …
Generalized Ellipsometry On Complex Nanostructures And Low-Symmetry Materials, Alyssa Mock
Generalized Ellipsometry On Complex Nanostructures And Low-Symmetry Materials, Alyssa Mock
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
In this thesis, complex anisotropic materials are investigated and characterized by generalized ellipsometry. In recent years, anisotropic materials have gained considerable interest for novel applications in electronic and optoelectronic devices, mostly due to unique properties that originate from reduced crystal symmetry. Examples include white solid-state lighting devices which have become ubiquitous just recently, and the emergence of high-power, high-voltage electronic transistors and switches in all-electric vehicles. The incorporation of single crystalline material with low crystal symmetry into novel device structures requires reconsideration of existing optical characterization approaches. Here, the generalized ellipsometry concept is extended to include applications for materials with …
Below Gap Optical Absorption In Gaas Driven By Intense, Single-Cycle Coherent Transition Radiation, J. Goodfellow, Matthias Fuchs, D. Daranciang, S. Ghimire, F. Chen, H. Loos, D. A. Reis, A. S. Fisher, A. M. Lindenberg
Below Gap Optical Absorption In Gaas Driven By Intense, Single-Cycle Coherent Transition Radiation, J. Goodfellow, Matthias Fuchs, D. Daranciang, S. Ghimire, F. Chen, H. Loos, D. A. Reis, A. S. Fisher, A. M. Lindenberg
Matthias Fuchs Publications
Single-cycle terahertz fields generated by coherent transition radiation from a relativistic electron beam are used to study the high field optical response of single crystal GaAs. Large amplitude changes in the sub-band-gap optical absorption are induced and probed dynamically by measuring the absorption of a broad-band optical beam generated by transition radiation from the same electron bunch, providing an absolutely synchronized pump and probe geometry. This modification of the optical properties is consistent with strong-field-induced electroabsorption. These processes are pertinent to a wide range of nonlinear terahertz-driven lightmatter interactions anticipated at accelerator-based sources.
A Low-Power Optical Electron Switch, Wayne Cheng-Wei Huang, Roger Bach, Peter Beierle, Herman Batelaan
A Low-Power Optical Electron Switch, Wayne Cheng-Wei Huang, Roger Bach, Peter Beierle, Herman Batelaan
Department of Physics and Astronomy: Faculty Publications
An electron beam is deflected when it passes over a silicon-nitride surface, if the surface is illuminated by a low-power continuous-wave diode laser. A deflection angle of up to 1.2 mrad is achieved for an electron beam of 29 μrad divergence. A mechanical beam-stop is used to demonstrate that the effect can act as an optical electron switch with a rise and fall time of 6 μs. Such a switch provides an alternative means to control electron beams, which may be useful in electron lithography and microscopy.