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Articles 1 - 11 of 11
Full-Text Articles in Condensed Matter Physics
Chemical And Electronic Structure Of Surfaces And Interfaces In Compound Semiconductors, Sujitra Pookpanratana
Chemical And Electronic Structure Of Surfaces And Interfaces In Compound Semiconductors, Sujitra Pookpanratana
UNLV Theses, Dissertations, Professional Papers, and Capstones
The interface formation between two different materials is important in applications for optoelectronic devices. Often, the success or performance of these devices is dependent on the formation of these heterojunctions. In this work, the surface and interfaces in such materials for optoelectronic devices are investigated by a suite of X-ray analytical techniques including X-ray photoelectron (XPS), X-ray excited Auger electron (XAES), and X-ray emission (XES) spectroscopies to provide novel insight.
For the group III-nitrides (e.g., AlxGa1-xN) used in many light emitting devices, a significant challenge exists to form an Ohmic contact. The electron affinities and band gaps of GaN and …
Elastic And Magnetic Properties Of Tb6fe(Sb,Bi)2 Using Resonant Ultrasound Spectroscopy., David Michael Mccarthy
Elastic And Magnetic Properties Of Tb6fe(Sb,Bi)2 Using Resonant Ultrasound Spectroscopy., David Michael Mccarthy
Masters Theses
Tb6FeSb2 and Tb6FeBi2 are novel rare earth compounds with little prior research. These compounds show high and variable curie temperatures for rare-earth compounds. This has lead to a literature review which includes the discussion of: elasticity, resonance, and magnetism. This review is used to discuss the theory and methodology which can relate these various properties to each other. Furthermore, synthesis, x-ray analysis, and RUS sample preparation of Tb6FeSb2 and Tb6FeBi2 were completed.
Resonant Ultrasound Spectroscopy (RUS) elastic studies were taken for Tb6FeSb2 and Tb6FeBi2 as a function temperature from 5-300K, in various magnetic fields ranging from 0-9T. Tb6FeSb2’s and Tb6FeBi2’s …
Structural, Magnetic, And Defect Properties Of Co-Pt-Type Magnetic-Storage Alloys: Density-Functional Theory Study Of Thermal Processing Effects, Aftab Alam, Brent Kraczek, Duane D. Johnson
Structural, Magnetic, And Defect Properties Of Co-Pt-Type Magnetic-Storage Alloys: Density-Functional Theory Study Of Thermal Processing Effects, Aftab Alam, Brent Kraczek, Duane D. Johnson
Duane D. Johnson
Using an optimized-basis Korringa-Kohn-Rostoker-coherent-potential approximation method, we calculate formation enthalpies ΔEf, structural, and magnetic properties of paramagnetic (PM) and ferromagnetic, disordered A1 and ordered L10 CoPt, FePd, and FePt systems that are of interest for high-density magnetic-recording media. To address processing effects, we focus on the point defects that dictate thermal properties and planar defects (e.g., c domain and antiphase boundaries) which can serve as pinning centers for magnetic domains and affect storage properties. We determine bulk Curie (Tc) and order-disorder (To-d) transition temperatures within 4% of observed values, and estimates for nanoparticles. Planar-defect energies γhklx show that the favorable …
Boron Carbide Based Solid State Neutron Detectors: The Effects Of Bias And Time Constant On Detection Efficiency, Nina Hong, John Mullins, Keith Foreman, Shireen Adenwalla
Boron Carbide Based Solid State Neutron Detectors: The Effects Of Bias And Time Constant On Detection Efficiency, Nina Hong, John Mullins, Keith Foreman, Shireen Adenwalla
Shireen Adenwalla Papers
Neutron detection in thick boron carbide(BC)/n-type Si heterojunction diodes shows a threefold increase in efficiency with applied bias and longer time constants. The improved efficiencies resulting from long time constants have been conclusively linked to the much longer charge collection times in the BC layer. Neutron detection signals from both the p-type BC layer and the n-type Si side of the heterojunction diode are observed, with comparable efficiencies. Collectively, these provide strong evidence that the semiconducting BC layer plays an active role in neutron detection, both in neutron capture and in charge generation and collection.
Electro-Optic And Magneto-Dielectric Properties Of Multifunctional Nitride And Oxide Materials, Ambesh Dixit
Electro-Optic And Magneto-Dielectric Properties Of Multifunctional Nitride And Oxide Materials, Ambesh Dixit
Wayne State University Dissertations
ABSTRACT
Materials that simultaneously exhibit different physical properties provide a rich area of research leading to the development of new devices. For example, materials having a strong coupling between charge and spin degrees of freedom are essential to realizing a new class of devices referred to generally as spintronics. However, these multifunctional systems pose new scientific challenges in understanding the origin and mechanisms for cross-control of different functionalities. The core of this Ph.D. dissertation deals with multifunctional nitride and oxide compound semiconductors as well as multiferroic magnetic oxide systems by investigating structural, optical, electrical, magnetic, magnetodielectric and magnetoelectric properties.
Thin …
Current Issues In Research On Structure-Property Relationships In Polymer Nanocomposites, J. Jancar, J. Douglas, Francis Starr, S. Kumar, P. Cassagnau, A. Lesser, S. Sternstein, M. Buehler
Current Issues In Research On Structure-Property Relationships In Polymer Nanocomposites, J. Jancar, J. Douglas, Francis Starr, S. Kumar, P. Cassagnau, A. Lesser, S. Sternstein, M. Buehler
Francis Starr
No abstract provided.
Ultrathin, Ultrasmooth And Low-Loss Silver Films Via Wetting And Annealing, Weiqiang Chen, Kuo-Ping Chen, Mark Daniel Thoreson, Alexander Kildishev, Vladimir M. Shalaev
Ultrathin, Ultrasmooth And Low-Loss Silver Films Via Wetting And Annealing, Weiqiang Chen, Kuo-Ping Chen, Mark Daniel Thoreson, Alexander Kildishev, Vladimir M. Shalaev
Weiqiang Chen
We have demonstrated that a thermal annealing treatment can reduce the optical losses in ultrathin, ultrasmooth, silver films deposited on a Ge wetting layer to values as low as the bulk material value and at the same time maintain an ultrasmooth surface. The annealing effect is sensitive to the annealing temperature and time, both of which should be carefully controlled. This annealing treatment is also effective for Ag–SiO2 multilayer composite films.
Preparation And Characterization Of Pt/Γ-Al2o3 Model Catalyst On Nial Alloy, Zhongfan Zhang, Long Li, Lin-Lin Wang, Sergio I. Sanchez, Ross V. Grieshaber, Qi Wang, Duane D. Johnson, Anatoly I. Frenkel, Ralph G. Nuzzo, Judith C. Yang
Preparation And Characterization Of Pt/Γ-Al2o3 Model Catalyst On Nial Alloy, Zhongfan Zhang, Long Li, Lin-Lin Wang, Sergio I. Sanchez, Ross V. Grieshaber, Qi Wang, Duane D. Johnson, Anatoly I. Frenkel, Ralph G. Nuzzo, Judith C. Yang
Duane D. Johnson
Numerous studies of heterogeneous catalysis systems clearly demonstrate that the metal nanoparticle (NPs)/support interaction is significant in determining the catalytic chemistry. Theoretical simulations have been performed to understand the metal/support interactions [1,2]. For example, theorists discovered that electronic and oxygen defects of γ-Al2O3 anchor the active particles [1]. Platinum NPs dispersed on γ-alumina is one of the most widely used heterogeneous catalysts and Pt performs extremely well as a catalyst for the oxygen-reduction reaction used in fuel cell industries. Hence, we chose Pt/γ-Al2O3 as a model heterogeneous catalyst system to investigate the metal NPs/support interface by electron microscopy methods with …
Interphase Energies Of Hcp Precipitates In Fcc Metals: A Density-Functional Theory Study In Al-Ag, Daniel Finkenstadt, Duane D. Johnson
Interphase Energies Of Hcp Precipitates In Fcc Metals: A Density-Functional Theory Study In Al-Ag, Daniel Finkenstadt, Duane D. Johnson
Duane D. Johnson
Density-functional theory (DFT) calculations of interphase boundary energies relevant to hexagonal-close-packed (hcp) γ-precipitate formation were performed within approximate unit cells that mirror the experimental conditions in face-centered-cubic (fcc) Al-Ag solid solutions. In Al-rich, fcc Al-Ag, γ precipitates are observed to form rapidly with large (300+) aspect ratios even though the Al stacking-fault energy is high (approximately 130 mJ/m2), which should suppress hcp ribbon formation according to standard arguments. Our DFT results show why high-aspect ratio plates occur and why previous estimates based on Wulff construction were orders of magnitude less than observed values. Using DFT, we obtain a Gibbs free-energy …
Suppression Of Octahedral Tilts And Associated Changes In Electronic Properties At Epitaxial Oxide Heterostructure Interfaces, A. Y. Borisevich, H. Y. Chang, Mark Huijben, M. P. Oxley, S. Okamoto, Manish K. Niranjan, John D. Burton, Evgeny Y. Tsymbal, Y. H. Chu, P. Yu, R. Ramesh, Sergei V. Kalinin, S. J. Pennycook
Suppression Of Octahedral Tilts And Associated Changes In Electronic Properties At Epitaxial Oxide Heterostructure Interfaces, A. Y. Borisevich, H. Y. Chang, Mark Huijben, M. P. Oxley, S. Okamoto, Manish K. Niranjan, John D. Burton, Evgeny Y. Tsymbal, Y. H. Chu, P. Yu, R. Ramesh, Sergei V. Kalinin, S. J. Pennycook
Materials Research Science and Engineering Center: Faculty Publications
Epitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell mapping of lattice parameters and oxygen octahedral rotations across the BiFeO3 -La0:7 Sr0:3MnO3 interface to elucidate how the change of crystal symmetry is accommodated. Combined with low-loss electron energy loss spectroscopy imaging, we demonstrate a mesoscopic antiferrodistortive phase transition near the interface in BiFeO3 and elucidate associated changes in electronic properties in a thin layer directly adjacent to the interface.
Quantum Dot Quantum Computation In Iii-V Type Semiconductor, Sanjay K. Prabhakar
Quantum Dot Quantum Computation In Iii-V Type Semiconductor, Sanjay K. Prabhakar
Legacy Theses & Dissertations (2009 - 2024)
Among recent proposals for next-generation, non-charge-based logic is the notion that a single electron can be trapped and spin of the electron can be manipulated through the application of gate potentials. In the thesis, there are two major contributions of the manipulation of electron spin. In regard to the first contribution, we present numerical simulations of such a spin in single electron devices for realistic asymmetric potentials in electrostatically confined quantum dot. Using analytical and numerical techniques we show that breaking in-plane rotational symmetry of the confining potential by applied gate voltage leads to a significant effect on the tuning …