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Articles 1 - 9 of 9
Full-Text Articles in Condensed Matter Physics
Investigating Van Der Waals Josephson Junctions With 2h-Nbse2 And 1t’-Wte2, Kristine Lorraine Haley
Investigating Van Der Waals Josephson Junctions With 2h-Nbse2 And 1t’-Wte2, Kristine Lorraine Haley
UNLV Theses, Dissertations, Professional Papers, and Capstones
Josephson junctions have garnered significant attention due to their unique electronic properties and applications in quantum devices. In this thesis, we investigate the fabrication processes and characterization of two-dimensional (2D) Josephson junctions consisting of layered van der Waals materials: niobium diselenide (2H-NbSe2) and few layered tungsten ditelluride (1T’-WTe2). The reduction of dimensionality can bring forth unique characteristics in certain materials that are not seen in their bulk counterparts, making them prime candidates for physical exploration. 2H-NbSe2 is an s-wave superconductor at temperatures near and below 7 K. 1T’-WTe2 is a semimetal in bulk but …
Towards The Electronic Response Of Carbon-Based Van Der Waals Heterostructures In A Diamond Anvil Cell, George Thomas Foskaris
Towards The Electronic Response Of Carbon-Based Van Der Waals Heterostructures In A Diamond Anvil Cell, George Thomas Foskaris
UNLV Theses, Dissertations, Professional Papers, and Capstones
The nanoscale regime of materials has been at the forefront of research and interest in condensed matter physics for many years. In a merger of the fields of two-dimensional (2D) materials and high pressure physics, we present an investigation of the electronic response of carbon-based, van der Waals (vdW) heterostructures in a diamond anvil cell (DAC). Combining these fields presents us with the ability to study the characteristics of such systems both optically, and through electrical transport. Properties such as conductance, band structure, and layer number are considered. The samples in this study are assembled using exfoliation and stacking techniques …
Towards Highly Sensitive Capacitance Measurements Of A Quantum Anomalous Hall Phase In Van Der Waal Heterostructures, Kayla Cerminara
Towards Highly Sensitive Capacitance Measurements Of A Quantum Anomalous Hall Phase In Van Der Waal Heterostructures, Kayla Cerminara
UNLV Theses, Dissertations, Professional Papers, and Capstones
One of the pioneering achievements in condensed matter physics of the 20th century is the observation of the quantum Hall e↵ect (QHE) in which the Hall resistance in a two-dimensional (2D) sample takes on quantized values in the presence of a strong perpendicular magnetic field. The precise quantization of the hall resistance to one part in a billion has provided a practical, worldwide resistance standard. A long-standing goal has been to realize a similar state of matter but without the need of a strong quantizing magnetic field. The quantum anomalous Hall e↵ect (QAHE) is such a state that is predicted …
Equation Of State Of H2o Ice Using Melt-Recrystallization, Zachary Michael Grande
Equation Of State Of H2o Ice Using Melt-Recrystallization, Zachary Michael Grande
UNLV Theses, Dissertations, Professional Papers, and Capstones
The recent surge in exoplanet discoveries due to advancements in astrophysical technology and analysis has brought the reliability of early equation of state measurements into question as they are the limiting factor when modeling composition of these planets. H2O content is among the most important for the search of habitable planets as well as in understanding planetary dynamics and atmosphere formation. Over the last three decades the equation of state of H2O has been investigated with various techniques but, has suffered from anisotropic strain and poor powder statistics resulting in a large discrepancy in equation of state fits. At pressures …
High-Pressure Properties Of Several Narrow Bandgap Semiconductors From First-Principles Calculations, Andrew Michael Alvarado
High-Pressure Properties Of Several Narrow Bandgap Semiconductors From First-Principles Calculations, Andrew Michael Alvarado
UNLV Theses, Dissertations, Professional Papers, and Capstones
The electronic, thermodynamic, and structural properties of three semiconducting materials, ZnO, InN, and PbS, at high pressure are investigated utilizing first-principles calculations based on density function theory. The first two systems, ZnO and InN, crystalize as hexagonal structures at ambient conditions and transition to a cubic structure at higher pressures. The last system, PbS, is cubic at ambient conditions, but transitions to an orthorhombic structure at higher pressure. At ambient conditions, these materials are well known semiconductors with vast amount of research and a variety of wide ranging applications in electrical devices. However, there is a lack of understanding of …
Impedance Spectroscopy Studies Of Yttria Stabilized Zirconia Under Extreme Conditions, Quinlan Blaine Smith
Impedance Spectroscopy Studies Of Yttria Stabilized Zirconia Under Extreme Conditions, Quinlan Blaine Smith
UNLV Theses, Dissertations, Professional Papers, and Capstones
Yttria Stabilized Zirconia (YSZ) is of interest for many industries. Varying amounts of Yttria (Y2O3) can be doped into Zirconia (ZrO2) to create materials with specific characteristics. For instance, 3mol% YSZ (3YSZ) is known to be a super hard material and is used as a coating on drill tips and as an abrasive. Eight mol% YSZ (8YSZ) is commonly used as a solid electrolyte in Solid Oxide Fuel Cells because of its good ionic conducting abilities and stability at high temperatures. In this thesis project, a novel experimental setup was created and used to study the ionic conductivity of (3 …
High Pressure Behavior Of Mullite-Type Oxides: Phase Transitions, Amorphization, Negative Linear Compressibility And Microstructural Implications, Patricia Kalita
High Pressure Behavior Of Mullite-Type Oxides: Phase Transitions, Amorphization, Negative Linear Compressibility And Microstructural Implications, Patricia Kalita
UNLV Theses, Dissertations, Professional Papers, and Capstones
Even though mullite occurs rarely in nature, it is perhaps one of the most important phases in both traditional and advanced ceramics. Existing and emerging applications of mullite and mullite-type materials include: high-temperature composites, aerospace materials, ballistic shielding for military applications and even non-linear optical materials. There are many uncertainties regarding the basic physical properties of mullite-type materials, particularly in terms of their high-pressure structural stability and mechanical behavior that are important to address for emerging applications of mullites as engineering materials. This work is the first reported comprehensive investigation of the high –pressure structural behavior of several different mullites …
Raman Spectroscopic Study Of Solid Solution Spinel Oxides, Brian D. Hosterman
Raman Spectroscopic Study Of Solid Solution Spinel Oxides, Brian D. Hosterman
UNLV Theses, Dissertations, Professional Papers, and Capstones
Solid solution spinel oxides of composition MgxNi1−xCr2O4, NiFexCr2−xO4, and FexCr3−xO4 were synthesized and characterized using x-ray diffraction and Raman spectroscopy. Frequencies of the Raman-active modes are tracked as the metal cations within the spinel lattice are exchanged. This gives information about the dependence of the lattice vibrations on the tetrahedral and octahedral cations. The highest-frequency Raman-active mode, A1g, is unaffected by substitution of the divalent tetrahedral cation, whereas the lower frequency vibrations are more strongly affected by substitution of the tetrahedral cation. The change in wavenumber of many phonons is nonlinear upon cation exchange. All detected modes of MgxNi1−xCr2O4 and …
Chemical And Electronic Structure Of Surfaces And Interfaces In Compound Semiconductors, Sujitra Pookpanratana
Chemical And Electronic Structure Of Surfaces And Interfaces In Compound Semiconductors, Sujitra Pookpanratana
UNLV Theses, Dissertations, Professional Papers, and Capstones
The interface formation between two different materials is important in applications for optoelectronic devices. Often, the success or performance of these devices is dependent on the formation of these heterojunctions. In this work, the surface and interfaces in such materials for optoelectronic devices are investigated by a suite of X-ray analytical techniques including X-ray photoelectron (XPS), X-ray excited Auger electron (XAES), and X-ray emission (XES) spectroscopies to provide novel insight.
For the group III-nitrides (e.g., AlxGa1-xN) used in many light emitting devices, a significant challenge exists to form an Ohmic contact. The electron affinities and band gaps of GaN and …