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Articles 1 - 16 of 16
Full-Text Articles in Condensed Matter Physics
Competing Magnetic Phases And Itinerant Magnetic Frustration In Srco2 As2, Bing Li, Benjamin G. Ueland, W. T. Jayasekara, D. L. Abernathy, N. S. Sangeetha, David C. Johnston, Qing-Ping Ding, Yuji Furukawa, Peter P. Orth, Andreas Kreyssig, Alan I. Goldman, Robert J. Mcqueeney
Competing Magnetic Phases And Itinerant Magnetic Frustration In Srco2 As2, Bing Li, Benjamin G. Ueland, W. T. Jayasekara, D. L. Abernathy, N. S. Sangeetha, David C. Johnston, Qing-Ping Ding, Yuji Furukawa, Peter P. Orth, Andreas Kreyssig, Alan I. Goldman, Robert J. Mcqueeney
A. I. Goldman
Whereas magnetic frustration is typically associated with local-moment magnets in special geometric arrangements, here we show that SrCo2As2 is a candidate for frustrated itinerant magnetism. Using inelastic neutron scattering (INS), we find that antiferromagnetic (AF) spin fluctuations develop in the square Co layers of SrCo2As2 below T approximate to 100 K centered at the stripe-type AF propagation vector of (1/2, 1/2), and that their development is concomitant with a suppression of the uniform magnetic susceptibility determined via magnetization measurements. We interpret this switch in spectral weight as signaling a temperature-induced crossover from an instability toward ferromagnetism ordering to an instability …
Suppression Of Antiferromagnetic Spin Fluctuations In Superconducting Cr0.8 Ru0.2, M. Ramazanoglu, Benjamin G. Ueland, D. K. Pratt, L. W. Harringer, J. W. Lynn, G. Ehlers, G. E. Granroth, Sergey L. Bud’Ko, Paul C. Canfield, Deborah L. Schlagel, Alan I. Goldman, Thomas A. Lograsso, Robert J. Mcqueeney
Suppression Of Antiferromagnetic Spin Fluctuations In Superconducting Cr0.8 Ru0.2, M. Ramazanoglu, Benjamin G. Ueland, D. K. Pratt, L. W. Harringer, J. W. Lynn, G. Ehlers, G. E. Granroth, Sergey L. Bud’Ko, Paul C. Canfield, Deborah L. Schlagel, Alan I. Goldman, Thomas A. Lograsso, Robert J. Mcqueeney
A. I. Goldman
Unconventional superconductivity (SC) often develops in magnetic metals on the cusp of static antiferromagnetic (AFM) order where spin fluctuations are strong. This association is so compelling that many SC materials are labeled as unconventional by proximity to an ordered AFM state. The Cr-Ru alloy system possesses such a phase diagram [see Fig. 1(a)]. Here we use inelastic neutron scattering to show that spin fluctuations are present in a SC Cr0.8Ru0.2 alloy (Tc=1.35 K). However, the neutron spin resonance, a possible signature of unconventional SC, is not observed. Instead, data indicate a spin gap of order 2Δ (the superconducting gap) and …
Tailoring The Asymmetric Magnetoimpedance Response In Exchange-Biased Ni - Fe Multilayers, Ufuk Kilic, Carolina Ross, Carlos Garcia
Tailoring The Asymmetric Magnetoimpedance Response In Exchange-Biased Ni - Fe Multilayers, Ufuk Kilic, Carolina Ross, Carlos Garcia
Ufuk Kilic
Weak Anti-Localization And Quantum Oscillations Of Surface States In Topological Insulator Bi2se2te, Lihong Bao, Liang He, Nicholas R. Meyer, Xufeng Kou, Peng Zhang, Zhi-Gang Chen, Alexei V. Fedorov, Trevor M. Riedemann, Thomas A. Lograsso, Kang L. Wang, Gary Tuttle, Faxian Xiu
Weak Anti-Localization And Quantum Oscillations Of Surface States In Topological Insulator Bi2se2te, Lihong Bao, Liang He, Nicholas R. Meyer, Xufeng Kou, Peng Zhang, Zhi-Gang Chen, Alexei V. Fedorov, Trevor M. Riedemann, Thomas A. Lograsso, Kang L. Wang, Gary Tuttle, Faxian Xiu
Gary Tuttle
Topological insulators, a new quantum state of matter, create exciting opportunities for studying topological quantum physics and for exploring spintronic applications due to their gapless helical metallic surface states. Here, we report the observation of weak anti-localization and quantum oscillations originated from surface states in Bi2Se2Te crystals. Angle-resolved photoemission spectroscopy measurements on cleaved Bi2Se2Te crystals show a well-defined linear dispersion without intersection of the conduction band. The measured weak anti-localization effect agrees well with the Hikami-Larkin-Nagaoka model and the extracted phase coherent length shows a power-law dependence with temperature ( ∼T−0.44), indicating the presence of the surface states. …
Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties And Applications, Urcan Guler, Sergey Suslov, Alexander V. Kildishev, Alexandra Boltasseva, Vladimir M. Shalaev
Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties And Applications, Urcan Guler, Sergey Suslov, Alexander V. Kildishev, Alexandra Boltasseva, Vladimir M. Shalaev
U. Guler
Reflectance Anisotropy Of Gd5si2ge2 And Tb5si2.2ge1.8, S. J. Lee, Joong Mok Park, J. E. Snyder, David C. Jiles, Deborah L. Schlagel, Thomas A. Lograsso, A. O. Pecharsky, David W. Lynch
Reflectance Anisotropy Of Gd5si2ge2 And Tb5si2.2ge1.8, S. J. Lee, Joong Mok Park, J. E. Snyder, David C. Jiles, Deborah L. Schlagel, Thomas A. Lograsso, A. O. Pecharsky, David W. Lynch
Professor David Lynch
Reflectance difference (RD) spectra for the a–b plane of the single crystals of Gd5Si2Ge2and b–c planes of Gd5Si2Ge2 and Tb5Si2.2Ge1.8 were obtained in the photon energy range of 1.5–5.5 eV. Several peaks were observed for these crystals in the measured spectrum range. Similar features were observed in the RD spectra for the b–c planes ofGd5Si2Ge2 and Tb5Si2.2Ge1.8, while different features were observed for the a–b plane and b–c plane of Gd5Si2Ge2. The RD spectra for the crystals arise not only from the surface anisotropy but also from the bulk anisotropy due to the monoclinic structure of the bulk crystal.
Modeling Complex Properties Of Ferroelectric Nanocomposites, Raymond T. Walter
Modeling Complex Properties Of Ferroelectric Nanocomposites, Raymond T. Walter
Raymond Walter
No abstract provided.
Size-Dependent Metal-Insulator Transition In Pt-Dispersed Sio2 Thin Film: A Candidate For Future Non-Volatile Memory, Albert B. Chen
Size-Dependent Metal-Insulator Transition In Pt-Dispersed Sio2 Thin Film: A Candidate For Future Non-Volatile Memory, Albert B. Chen
Albert B Chen
Non-volatile random access memories (NVRAM) are promising data storage and processing devices. Various NVRAM, such as FeRAM and MRAM, have been studied in the past. But resistance switching random access memory (RRAM) has demonstrated the most potential for replacing flash memory in use today. In this dissertation, a novel RRAM material design that relies upon an electronic transition, rather than a phase change (as in chalcogenide Ovonic RRAM) or a structural change (such in oxide and halide filamentary RRAM), is investigated. Since the design is not limited to a single material but applicable to general combinations of metals and insulators, …
Capillary Force In High Aspect-Ratio Micropillar Arrays, Dinesh Chandra
Capillary Force In High Aspect-Ratio Micropillar Arrays, Dinesh Chandra
Dinesh Chandra
High aspect-ratio (HAR) micropillar arrays are important for many applications including, mechanical sensors and actuators, tunable wetting surfaces and substrates for living cell studies. However, due to their mechanical compliance and large surface area, the micropillars are susceptible to deformation due to surface forces, such as adhesive force and capillary force. In this thesis we have explored the capillary force driven mechanical instability of HAR micropillar arrays. We have shown that when a liquid is evaporated off the micropillar arrays, the pillars bend and cluster together due to a much smaller capillary meniscus interaction force while still surrounded by a …
An Analytical Model For Complete Solute Trapping During Rapid Solidification Of Binary Alloys, Sergey Sobolev
An Analytical Model For Complete Solute Trapping During Rapid Solidification Of Binary Alloys, Sergey Sobolev
Sergey Sobolev
An analytical model has been developed to describe solute partitioning during rapid solidification of binary alloys under local nonequilibrium conditions. The model takes into account the deviations from equilibrium both at the solid–liquid interface according to the kinetic approach of Jackson et al. based on Monte Carlo simulations and in the bulk liquid using local nonequilibrium diffusion model (LNDM). The dimensionless growth parameter b found in the Monte Carlo simulations as the important parameter for solute trapping has been modified for the local nonequilibrium diffusion case. An analytical expression has been developed for the velocity-dependent partition coefficient K which predicts …
Transport And Magnetic Critical Current In Superconducting Mgb2 Wires, J. Horvat, W. K. Yeoh, J. H. Kim, S. X. Dou
Transport And Magnetic Critical Current In Superconducting Mgb2 Wires, J. Horvat, W. K. Yeoh, J. H. Kim, S. X. Dou
Shi Xue Dou
Direct comparison of the magnetic and transport critical current density (Jc) for the same pieces of copper-sheathed MgB2 wires shows a large discrepancy in magnitude and field dependence of the two. The value of magnetic Jc can differ from the value of transport Jc by a factor of 10 or more. This discrepancy does not occur merely because of the difference in the voltage at which the magnetic and transport Jc are measured, but mainly because of the specific microstructure of MgB2. Such microstructure results in superconducting screening on at least two different length-scales, despite the absence of weak links …
Peeling Adhesive Tape Emits Electromagnetic Radiation At Terahertz Frequencies, J. Horvat, R. A. Lewis
Peeling Adhesive Tape Emits Electromagnetic Radiation At Terahertz Frequencies, J. Horvat, R. A. Lewis
Roger A. Lewis
An unusual concept for a simple and inexpensive terahertz source is presented: unpeeling adhesive tape. The observed spectrum of this terahertz radiation exhibits a peak at 2 THz and a broader peak at 18 THz. The radiation is not polarized. The mechanism of terahertz radiation is tribocharging of the adhesive tape and subsequent discharge, possibly bremsstrahlung with absorption or energy density focusing during the dielectric breakdown of a gas. The accompanying optical emission is also a consequence of tribocharging.
Peeling Adhesive Tape Emits Electromagnetic Radiation At Terahertz Frequencies, J. Horvat, R. A. Lewis
Peeling Adhesive Tape Emits Electromagnetic Radiation At Terahertz Frequencies, J. Horvat, R. A. Lewis
Josip Horvat
An unusual concept for a simple and inexpensive terahertz source is presented: unpeeling adhesive tape. The observed spectrum of this terahertz radiation exhibits a peak at 2 THz and a broader peak at 18 THz. The radiation is not polarized. The mechanism of terahertz radiation is tribocharging of the adhesive tape and subsequent discharge, possibly bremsstrahlung with absorption or energy density focusing during the dielectric breakdown of a gas. The accompanying optical emission is also a consequence of tribocharging.
Electron Irradiation Effects On Ferroelectric Copolymer Langmuir-Blodgett Films, Christina M. Othon, Stephen Ducharme
Electron Irradiation Effects On Ferroelectric Copolymer Langmuir-Blodgett Films, Christina M. Othon, Stephen Ducharme
Christina M Othon
The effect of irradiation on the ferroelectric properties of Langmuir-Blodgett films of the copolymer poly(vinylidene fluoride-trifluorethelene) is investigating using 1.26 MeV electrons with dosages from 16 to 110 Mrad. Irradiation causes a systematic decrease in the phase transition temperature, coercive field and polarization of these thin films.
Hypothetical Thermodynamic Properties: The Boiling And Critical Temperatures Of Polyethylene And Polytetrafluoroethylene, James S. Chickos
Hypothetical Thermodynamic Properties: The Boiling And Critical Temperatures Of Polyethylene And Polytetrafluoroethylene, James S. Chickos
James Chickos
No abstract provided.
Science And Engineering Of Nanoparticle-Polymer Composites: Insights From Computer Simulation, Francis W. Starr, Sharon C. Glotzer
Science And Engineering Of Nanoparticle-Polymer Composites: Insights From Computer Simulation, Francis W. Starr, Sharon C. Glotzer
Francis Starr
No abstract provided.