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Ohmic Contact To Ion Implanted Gallium Arsenide Antimonide For Application To Indium Aluminum Arsenide-Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors, Kenneth G. Merkel Ii

Theses and Dissertations

The p-channel In_0.52Al_0.48As-GaAs_1-xSb_x heterostructure insulated-gate field effect transistor (p-HIGFET) is a candidate for complementary integrated circuits due to superior cutoff characteristics and low gate leakage current. Advancement of the In_0.52Al_0.48As-GaAs_1-xSb_x p-HIGFET requires improved source-drain design. Five main tasks were accomplished to achieve this goal. First, thermal limits of the In_0.52Al_0.48As-GaAs_0.51Sb_0.49 HIGFET were investigated. Second, the temperature dependence of band gap and impurity energies were determined for beryllium doped In_0.52Al_0.48. Third, high acceptor concentrations were obtained …