Open Access. Powered by Scholars. Published by Universities.®
Atomic, Molecular and Optical Physics Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Institution
- Keyword
- Publication
- Publication Type
Articles 1 - 5 of 5
Full-Text Articles in Atomic, Molecular and Optical Physics
Optical Characterization Of Indium Arsenide Antimonide Semiconductors Grown By Molecular Beam Epitaxy, Michael A. Marciniak
Optical Characterization Of Indium Arsenide Antimonide Semiconductors Grown By Molecular Beam Epitaxy, Michael A. Marciniak
Theses and Dissertations
The material parameters and crystalline quality of undoped, MBE-grown InAs1-xSbx nearly lattice-matched to (100) GaSb (-0.617% ≤ Δ a-a ≤ +0.708%) similar to material used for mid-infrared semiconductor lasers were determined by optical characterization. Absorption measurements at temperatures between 6-295 K determined the energy gap and wavelength-dependent absorption coefficient for each sample. The compositional dependence of the energy gap was anomalous when compared to previously reported data, suggesting phase separation existed in the material. The samples were also studied by temperature- and excitation-dependent photoluminescence (PL), which, for the majority of cases, showed only a single band-edge peak, …
Non-Imaging Infrared Spectral Target Detection, Matthew R. Whiteley
Non-Imaging Infrared Spectral Target Detection, Matthew R. Whiteley
Theses and Dissertations
Automatic detection of time-critical mobile targets using spectral-only infrared radiance data is explored. A quantification of the probability of detection, false alarm rate, and total error rate associated with this detection process is provided. A set of classification features is developed for the spectral data, and these features are utilized in a Bayesian classifier singly and in combination to provide target detection. The results of this processing are presented and sensitivity of the class separability to target set, target configuration, diurnal variations, mean contrast, and ambient temperature estimation errors is explored. This work introduces the concept of atmospheric normalization of …
Ohmic Contact To Ion Implanted Gallium Arsenide Antimonide For Application To Indium Aluminum Arsenide-Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors, Kenneth G. Merkel Ii
Ohmic Contact To Ion Implanted Gallium Arsenide Antimonide For Application To Indium Aluminum Arsenide-Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors, Kenneth G. Merkel Ii
Theses and Dissertations
The p-channel In0.52Al0.48As-GaAs1-xSbx heterostructure insulated-gate field effect transistor (p-HIGFET) is a candidate for complementary integrated circuits due to superior cutoff characteristics and low gate leakage current. Advancement of the In0.52Al0.48As-GaAs1-xSbx p-HIGFET requires improved source-drain design. Five main tasks were accomplished to achieve this goal. First, thermal limits of the In0.52Al0.48As-GaAs0.51Sb0.49 HIGFET were investigated. Second, the temperature dependence of band gap and impurity energies were determined for beryllium doped In0.52Al0.48. Third, high acceptor concentrations were obtained …
Bandwidth And Additive Bandwidth Of Graphs, Maria Kujawski
Bandwidth And Additive Bandwidth Of Graphs, Maria Kujawski
Honors Capstone Projects and Theses
No abstract provided.
Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu
Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu
Electrical & Computer Engineering Faculty Publications
Scanning-tunneling microscopy has been used to study temperature and coverage dependence of the structure of lead on the Si(111)-7×7 surface. For low Pb coverage, the Pb atoms favored the faulted sites. The ratio between the number of Pb atoms on faulted to unfaulted sites increased after sample annealing. An energy difference of 0.05 eV associated with a Pb atom on these two sites is estimated. The mobility of Pb atoms on Si(111) was observed at a temperature as low as 260°C for a coverage of 0.1 and 1 ML. © 1995 The American Physical Society.