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Monte Carlo Simulation Of Hole Transport And Terahertz Amplification In Multilayer Delta Doped Semiconductor Structures, Maxim Dolguikh
Monte Carlo Simulation Of Hole Transport And Terahertz Amplification In Multilayer Delta Doped Semiconductor Structures, Maxim Dolguikh
Electronic Theses and Dissertations
Monte Carlo method for the simulation of hole dynamics in degenerate valence subbands of cubic semiconductors is developed. All possible intra- and inter-subband scattering rates are theoretically calculated for Ge, Si, and GaAs. A far-infrared laser concept based on intersubband transitions of holes in p-type periodically delta-doped semiconductor films is studied using numerical Monte-Carlo simulation of hot hole dynamics. The considered device consists of monocrystalline pure Ge layers periodically interleaved with delta-doped layers and operates with vertical or in-plane hole transport in the presence of a perpendicular in-plane magnetic field. Inversion population on intersubband transitions arises due to light hole …
Integration Of Vmc++ Into A Commercial Treatment Planning System, Joseph Kingsley Gardner
Integration Of Vmc++ Into A Commercial Treatment Planning System, Joseph Kingsley Gardner
Theses and Dissertations
Recently, there has been interest to integrate VMC++ into the commercial treatment planning system at VCU as another Monte Carlo code option, since it has been shown to increase efficiency dramatically without introducing a significant amount of systematic error. Also, independent validation of VMC++ for photon beams is of interest since this has not been performed previously in literature. This study included several tests required to integrate VMC++. Output factor normalization was performed and found to agree with experiment to within 1% for all field sizes except 1x1 cm2. Geometric validation was successful. Dosimetric validation was performed with respect to …