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Full-Text Articles in Physics

Carrier Dynamics Of Terahertz Emission Based On Strained Sige/Si Single Quantum Well, K. M. Hung, J.-Y. Kuo, C. C. Hong, Greg Sun, R. A. Soref May 2010

Carrier Dynamics Of Terahertz Emission Based On Strained Sige/Si Single Quantum Well, K. M. Hung, J.-Y. Kuo, C. C. Hong, Greg Sun, R. A. Soref

Physics Faculty Publications

We report analysis of the carrier distribution during terahertz emission process with carrier–phonon interaction based on p-doped strained SiGe/Si single quantum-well. The results of this analysis show that a considerable number of carriers can penetrate the phonon wall to become “hot” carriers on an approximately picosecond timescale. These hot carriers relax after the removal of the applied voltage, generating a “second” emission in the measurement. This investigation provides an understanding of the carrier dynamics of terahertz emission and has an implication for the design of semiconductor terahertz emitters.


Carrier Dynamics In Mid-Infrared Quantum Well Lasers Using Time-Resolved Photoluminescence, Steven M. Gorski Mar 2002

Carrier Dynamics In Mid-Infrared Quantum Well Lasers Using Time-Resolved Photoluminescence, Steven M. Gorski

Theses and Dissertations

Research in mid-infrared laser technology has uncovered numerous applications for commercial and government use. A limiting factor for mid-infrared semiconductors is nonradiative recombination, which is a process that produces excess heat without emitting a photon. Nonradiative recombination mechanisms occur over a short time period and difficult to measure. Growth methods have significantly reduced the nonradiative recombination in some materials. The objective of this research is to further the understanding of how quantum well structures impact carrier recombination. InAsSb/InAlASb and InAs/GaInSb quantum well structures were studied with time-resolved photoluminescence utilizing upconversion, a non-linear wave mixing technique. This research reports Shockley-Read-Hall, radiative, …


Photoluminescence Of Single Quantum Well Structures In Gallium Arsenide, Christian A. Bartholomew Mar 2001

Photoluminescence Of Single Quantum Well Structures In Gallium Arsenide, Christian A. Bartholomew

Theses and Dissertations

The continued development of state-of the-art semiconductor technologies and devices by the United States Air Force and the Department of Defense requires accurate and efficient techniques to evaluate and model these new materials. Of particular interest to the Air Force are quantum well structures which can be used for small-scale laser sources in fly-by-light applications, as efficient infrared countermeasures to heat-seeking missiles, or as advanced seekers in optically guided missiles. This thesis provides the initial experimental procedures and data necessary to begin producing accurate yet robust models. Although carrier effective masses could not be evaluated using hot-electron photoluminescence, photoluminescence excitation …


Hot Electron Injection Into Dense Argon, Nitrogen, And Hydrogen, Pavel Smejtek, M. Silver, K. S. Dy, David G. Onn Aug 1973

Hot Electron Injection Into Dense Argon, Nitrogen, And Hydrogen, Pavel Smejtek, M. Silver, K. S. Dy, David G. Onn

Physics Faculty Publications and Presentations

Hot electrons have been injected into very dense argon, nitrogen, and hydrogen gases and liquids. The current‐voltage characteristics are experimentally determined for densities (N) of argon, nitrogen, and hydrogen ranging from about 10²⁰ to 10²² cm⁻³ and applied fields (E) ranging from about 10 to 10⁴ V cm⁻¹. The argon data show a square root E∕N dependence of the current. The nitrogen and hydrogen data show a complicated dependence of the current on E∕N due to the rapid thermalization in the region of the image potential of the injected electrons through inelastic collision processes not present in argon. A hydrodynamic‐two‐fluid …


Hot Electron Injection Into Liquid Argon From A Tunnel Cathode, Pavel Smejtek, David G. Onn, M. Silver, P. Kumbhare May 1970

Hot Electron Injection Into Liquid Argon From A Tunnel Cathode, Pavel Smejtek, David G. Onn, M. Silver, P. Kumbhare

Physics Faculty Publications and Presentations

Hot electrons from a tunnel cathode have been injected into liquid argon (99.998% pure) at 87°K. The current vs voltage characteristics indicate that the injected hot electrons thermalize very slowly, losing their energy only by elastic scattering processes and finally by capture by the dilute impurities. The deduced thermalization time and distance are very long compared with that in helium, where bubble formation is responsible for energy loss.