Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Physics
Analysis Of Gan/Alxga1?Xn Heterojunction Dual-Band Photodetectors Using Capacitance Profiling Techniques, Laura E. Byrum
Analysis Of Gan/Alxga1?Xn Heterojunction Dual-Band Photodetectors Using Capacitance Profiling Techniques, Laura E. Byrum
Physics and Astronomy Theses
Capacitance-voltage-frequency measurements on n+-GaN/AlxGa1−xN UV/IR dual-band detectors are reported. The presence of shallow Si-donor, deep Si-donor, and C-donor/N-vacancy defect states were found to significantly alter the electrical characteristics of the detectors. The barrier Al fraction was found to change the position of the interface defect states relative to the Fermi level. The sample with Al fraction of 0.1 shows a distinct capacitance-step and hysteresis, which is attributed to C-donor/N-vacancy electron trap states located above the Fermi level (200 meV) at the heterointerface; whereas, the sample with Al fraction of 0.026 shows negative capacitance and dispersion, indicating C-donor/N-vacancy and deep Si-donor …
Uncooled Infrared Photon Detection Concepts And Devices, Viraj Vishwakantha Jayaweera Piyankarage
Uncooled Infrared Photon Detection Concepts And Devices, Viraj Vishwakantha Jayaweera Piyankarage
Physics and Astronomy Dissertations
This work describes infrared (IR) photon detector techniques based on novel semiconductor device concepts and detector designs. The aim of the investigation was to examine alternative IR detection concepts with a view to resolve some of the issues of existing IR detectors such as operating temperature and response range. Systems were fabricated to demonstrate the following IR detection concepts and determine detector parameters: (i) Near-infrared (NIR) detection based on dye-sensitization of nanostructured semiconductors, (ii) Displacement currents in semiconductor quantum dots (QDs) embedded dielectric media, (iii) Split-off band transitions in GaAs/AlGaAs heterojunction interfacial workfunction internal photoemission (HEIWIP) detectors. A far-infrared detector …