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Articles 1 - 6 of 6
Full-Text Articles in Physics
The Effect Of Polarization And Ingan Quantum Well Shape In Multiple Quantum Well Light Emitting Diode Heterostructures, Patrick M. Mcbride
The Effect Of Polarization And Ingan Quantum Well Shape In Multiple Quantum Well Light Emitting Diode Heterostructures, Patrick M. Mcbride
Master's Theses
Previous research in InGaN/GaN light emitting diodes (LEDs) employing semi-classical drift-diffusion models has used reduced polarization constants without much physical explanantion. This paper investigates possible physical explanations for this effective polarization reduction in InGaN LEDs through the use of the simulation software SiLENSe. One major problem of current LED simulations is the assumption of perfectly discrete transitions between the quantum well (QW) and blocking layers when experiments have shown this to not be the case. The In concentration profile within InGaN multiple quantum well (MQW) devices shows much smoother and delayed transitions indicative of indium diffusion and drift during …
Coexisting Pseudogap, Charge-Transfer-Gap, And Mott-Gap Energy Scales In The Resonant Inelastic X-Ray Scattering Spectra Of Electron-Doped Cuprate Superconductors, Susmita Basak, Tanmoy Das, Hsin Lin, M. Z. Hasan, R. S. Markiewicz, A. Bansil
Coexisting Pseudogap, Charge-Transfer-Gap, And Mott-Gap Energy Scales In The Resonant Inelastic X-Ray Scattering Spectra Of Electron-Doped Cuprate Superconductors, Susmita Basak, Tanmoy Das, Hsin Lin, M. Z. Hasan, R. S. Markiewicz, A. Bansil
Robert Markiewicz
We present a computation of Cu K-edge resonant inelastic x-ray scattering (RIXS) spectra for electron-doped cuprates, which includes coupling to bosonic fluctuations. Comparison with experiment over a wide range of energy and momentum transfers allows us to identify the signatures of three key normal-state energy scales: the pseudogap, charge-transfer gap, and Mott gap. The calculations involve a three-band Hubbard Hamiltonian based on dₓ2₋y2 and O pₓ, py orbitals, with a self-energy correction which arises due to spin and charge fluctuations. Our theory reproduces characteristic features, e.g., gap collapse, large spectral weight broadening, and spectral weight transfer as a function of …
Coexisting Pseudogap, Charge-Transfer-Gap, And Mott-Gap Energy Scales In The Resonant Inelastic X-Ray Scattering Spectra Of Electron-Doped Cuprate Superconductors, Susmita Basak, Tanmoy Das, Hsin Lin, M. Z. Hasan, R. S. Markiewicz, A. Bansil
Coexisting Pseudogap, Charge-Transfer-Gap, And Mott-Gap Energy Scales In The Resonant Inelastic X-Ray Scattering Spectra Of Electron-Doped Cuprate Superconductors, Susmita Basak, Tanmoy Das, Hsin Lin, M. Z. Hasan, R. S. Markiewicz, A. Bansil
Hsin Lin
We present a computation of Cu K-edge resonant inelastic x-ray scattering (RIXS) spectra for electron-doped cuprates, which includes coupling to bosonic fluctuations. Comparison with experiment over a wide range of energy and momentum transfers allows us to identify the signatures of three key normal-state energy scales: the pseudogap, charge-transfer gap, and Mott gap. The calculations involve a three-band Hubbard Hamiltonian based on dₓ2₋y2 and O pₓ, py orbitals, with a self-energy correction which arises due to spin and charge fluctuations. Our theory reproduces characteristic features, e.g., gap collapse, large spectral weight broadening, and spectral weight transfer as a function of …
Coexisting Pseudogap, Charge-Transfer-Gap, And Mott-Gap Energy Scales In The Resonant Inelastic X-Ray Scattering Spectra Of Electron-Doped Cuprate Superconductors, Susmita Basak, Tanmoy Das, Hsin Lin, M. Z. Hasan, R. S. Markiewicz, A. Bansil
Coexisting Pseudogap, Charge-Transfer-Gap, And Mott-Gap Energy Scales In The Resonant Inelastic X-Ray Scattering Spectra Of Electron-Doped Cuprate Superconductors, Susmita Basak, Tanmoy Das, Hsin Lin, M. Z. Hasan, R. S. Markiewicz, A. Bansil
Susmita Basak
We present a computation of Cu K-edge resonant inelastic x-ray scattering (RIXS) spectra for electron-doped cuprates, which includes coupling to bosonic fluctuations. Comparison with experiment over a wide range of energy and momentum transfers allows us to identify the signatures of three key normal-state energy scales: the pseudogap, charge-transfer gap, and Mott gap. The calculations involve a three-band Hubbard Hamiltonian based on dₓ2₋y2 and O pₓ, py orbitals, with a self-energy correction which arises due to spin and charge fluctuations. Our theory reproduces characteristic features, e.g., gap collapse, large spectral weight broadening, and spectral weight transfer as a function of …
Coexisting Pseudogap, Charge-Transfer-Gap, And Mott-Gap Energy Scales In The Resonant Inelastic X-Ray Scattering Spectra Of Electron-Doped Cuprate Superconductors, Susmita Basak, Tanmoy Das, Hsin Lin, M. Z. Hasan, R. S. Markiewicz, A. Bansil
Coexisting Pseudogap, Charge-Transfer-Gap, And Mott-Gap Energy Scales In The Resonant Inelastic X-Ray Scattering Spectra Of Electron-Doped Cuprate Superconductors, Susmita Basak, Tanmoy Das, Hsin Lin, M. Z. Hasan, R. S. Markiewicz, A. Bansil
Arun Bansil
We present a computation of Cu K-edge resonant inelastic x-ray scattering (RIXS) spectra for electron-doped cuprates, which includes coupling to bosonic fluctuations. Comparison with experiment over a wide range of energy and momentum transfers allows us to identify the signatures of three key normal-state energy scales: the pseudogap, charge-transfer gap, and Mott gap. The calculations involve a three-band Hubbard Hamiltonian based on dₓ2₋y2 and O pₓ, py orbitals, with a self-energy correction which arises due to spin and charge fluctuations. Our theory reproduces characteristic features, e.g., gap collapse, large spectral weight broadening, and spectral weight transfer as a function of …
Measurement Of Semiconductor Surface Potential Using The Scanning Electron Microscope, Jennifer T. Heath, Chun-Sheng Jiang, Mowafak M. Al-Jassim
Measurement Of Semiconductor Surface Potential Using The Scanning Electron Microscope, Jennifer T. Heath, Chun-Sheng Jiang, Mowafak M. Al-Jassim
Faculty Publications
We calibrate the secondary electron signal from a standard scanning electron microscope to voltage, yielding an image of the surface or near-surface potential. Data on both atomically abrupt heterojunction GaInP/GaAs and diffused homojunction Si solar cell devices clearly show the expected variation in potential with position and applied bias, giving depletion widths and locating metallurgical junctions to an accuracy better than 10 nm. In some images, distortion near the p-n junction is observed, seemingly consistent with the effects of lateral electric fields (patch fields). Reducing the tube bias removes this distortion. This approach results in rapid and straightforward collection of …