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Full-Text Articles in Physics

Plasma Based Synthesis And Surface Modification Of Graphene., Rong Zhao Aug 2018

Plasma Based Synthesis And Surface Modification Of Graphene., Rong Zhao

Electronic Theses and Dissertations

Graphene, an atom thick layer of carbon, has attracted intense scientific interest due to its exceptional electrical, mechanical and chemical properties. Especially, it provides a perfect platform to explore the unique electronic properties in absolute two-dimension. Pristine graphene possesses zero band gap and weakens its competitiveness in the field of semiconductors. In order to induce a band gap and control its semiconducting properties, functionalization and doping are two of the most feasible methods. In the context of functionalization, large area monolayer graphene synthesized by chemical vapor deposition was subjected to controlled and sequential fluorination using radio frequency plasma while monitoring ...


The Effect Of Processing Conditions On The Energetic Diagram Of Cdte Thin Films Studied By Photoluminescence, Shamara P. Collins Jul 2018

The Effect Of Processing Conditions On The Energetic Diagram Of Cdte Thin Films Studied By Photoluminescence, Shamara P. Collins

Graduate Theses and Dissertations

The photovoltaic properties of CdTe-based thin films depend on recombination levels formed in the CdTe layer and at the heterojunction. The localized states are resultant of structural defects (metal sublattice, chalcogen sublattice, interstitial), controlled doping, deposition process, and/or post-deposition annealing. The photoluminescence study of CdTe thin films, from both the bulk and heterojunction, can reveal radiative states due to different defects or impurities. Identification of defects allows for potential explanation of their roles and influence on solar cell performance. A thorough understanding of the material properties responsible for solar cell performance is critical in further advancing the efficiency of ...


Ferromagnetism Of Magnetically Doped Topological Insulators In Crxbi2− Xte3 Thin Films, Yan Ni, Z. Zhang, Ikenna C. Nlebedim, M. Ravi Hadimani, Gary L. Tuttle, David C. Jiles Jun 2017

Ferromagnetism Of Magnetically Doped Topological Insulators In Crxbi2− Xte3 Thin Films, Yan Ni, Z. Zhang, Ikenna C. Nlebedim, M. Ravi Hadimani, Gary L. Tuttle, David C. Jiles

Gary Tuttle

We investigated the effect of magnetic doping on magnetic and transport properties of Bi2Te3thin films. CrxBi2−xTe3 thin films with x = 0.03, 0.14, and 0.29 were grown epitaxially on mica substrate with low surface roughness (∼0.4 nm). It is found that Cr is an electron acceptor in Bi2Te3 and increases the magnetization of CrxBi2−xTe3. When x = 0.14 and 0.29,ferromagnetism appears in CrxBi2−xTe3 thin films, where anomalous Hall effect and weak localization of magnetoconductance were observed. The Curie temperature, coercivity, and remnant Hall resistance of thin films increase with increasing Cr concentration ...


Progress Towards Terahertz Acoustic Phonon Generation In Doping Superlattices, Thomas E. Wilson Mar 2017

Progress Towards Terahertz Acoustic Phonon Generation In Doping Superlattices, Thomas E. Wilson

Thomas E. Wilson

Progress is described in experiments to generate coherent terahertz acoustic phonons in silicon doping superlattices by the resonant absorption of nanosecond-pulsed far-infrared laser radiation. Future experiments are proposed that would use the superlattice as a transducer in a terahertz cryogenic acoustic reflection microscope with sub-nanometer resolution.


Novel Magnetic And Optical Properties Of Sn1−XZnXO2 Nanoparticles, Nevil A. Franco, Kongara M. Reddy, Josh Eixenberger, Dmitri A. Tenne, Charles B. Hanna, Alex Punnoose May 2015

Novel Magnetic And Optical Properties Of Sn1−XZnXO2 Nanoparticles, Nevil A. Franco, Kongara M. Reddy, Josh Eixenberger, Dmitri A. Tenne, Charles B. Hanna, Alex Punnoose

Physics Faculty Publications and Presentations

In this work, we report on the effects of doping SnO2 nanoparticles with Zn2+ ions. A series of ∼2–3 nm sized Sn1−x ZnxO2 crystallite samples with 0 ≤ x ≤ 0.18 were synthesized using a forced hydrolysis method. Increasing dopant concentration caused systematic changes in the crystallite size, oxidation state of Sn, visible emission, and band gap of SnO2 nanoparticles. X-ray Diffraction studies confirmed the SnO2 phase purity and the absence of any impurity phases. Magnetic measurements at room temperature showed a weak ferromagnetic behavior characterized by an open hysteresis loop ...


Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal Apr 2015

Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal

Krishna C. Mandal

No abstract provided.


Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal Apr 2015

Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal

Krishna C. Mandal

No abstract provided.


Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal Apr 2015

Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal

Krishna C. Mandal

No abstract provided.


Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal Apr 2015

Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal

Krishna C. Mandal

No abstract provided.


Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal Apr 2015

Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal

Krishna C. Mandal

No abstract provided.


Band Gap Engineering Via Doping: A Predictive Approach, Antonis N. Andriotis, Madhu Menon Mar 2015

Band Gap Engineering Via Doping: A Predictive Approach, Antonis N. Andriotis, Madhu Menon

Center for Computational Sciences Faculty Publications

We employ an extension of Harrison's theory at the tight binding level of approximation to develop a predictive approach for band gap engineering involving isovalent doping of wide band gap semiconductors. Our results indicate that reasonably accurate predictions can be achieved at qualitative as well as quantitative levels. The predictive results were checked against ab initio ones obtained at the level of DFT/SGGA + U approximation. The minor disagreements between predicted and ab initio results can be attributed to the electronic processes not incorporated in Harrison's theory. These include processes such as the conduction band anticrossing [Shan et ...


Applications Of High Throughput (Combinatorial) Methodologies To Electronic, Magnetic, Optical, And Energy-Related Materials, Martin L. Green, Ichiro Takeuchi, Jason R. Hattrick-Simpers Mar 2015

Applications Of High Throughput (Combinatorial) Methodologies To Electronic, Magnetic, Optical, And Energy-Related Materials, Martin L. Green, Ichiro Takeuchi, Jason R. Hattrick-Simpers

Jason R. Hattrick-Simpers

High throughput (combinatorial) materials science methodology is a relatively new research paradigm that offers the promise of rapid and efficient materials screening, optimization, and discovery. The paradigm started in the pharmaceutical industry but was rapidly adopted to accelerate materials research in a wide variety of areas. High throughput experiments are characterized by synthesis of a “library” sample that contains the materials variation of interest (typically composition), and rapid and localized measurement schemes that result in massive data sets. Because the data are collected at the same time on the same “library” sample, they can be highly uniform with respect to ...


Surface Science Studies Of Graphene Interfaces, Arjun Dahal Jan 2015

Surface Science Studies Of Graphene Interfaces, Arjun Dahal

Graduate Theses and Dissertations

Interfaces between graphene and dissimilar materials are needed for making devices, but those interfaces also modify the graphene properties due to charge transfer and/or symmetry breaking. In this dissertation we investigate the technology of preparing graphene on different substrates and how the substrate influences the electronic properties of graphene.

Synthesizing large area graphene on late transition metals by chemical vapor deposition is a promising approach for many applications of graphene. Among the transition metals, nickel has advantages because the good lattice match and strong interaction between graphene/Ni(111) enables the synthesis of a single domain of graphene on ...


Investigation Of Optical And Electronic Properties Of Au Decorated Mos2, Udai Bhanu Jan 2015

Investigation Of Optical And Electronic Properties Of Au Decorated Mos2, Udai Bhanu

Electronic Theses and Dissertations, 2004-2019

Achieving tunability of two dimensional (2D) transition metal dichalcogenides (TMDs) functions calls for the introduction of hybrid 2D materials by means of localized interactions with zero dimensional (0D) materials. A metal-semiconductor interface, as in gold (Au) - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science as it constitutes an outstanding platform to investigate optical and electronic properties due to charge transfer. The applied aspects of such systems introduce new options for electronics, photovoltaics, detectors, catalysis, and biosensing. Here in this dissertation, we study the charge transfer interaction between Au nanoparticals and MoS2 flakes and its effect ...


Influence Of Ga-Concentration On The Electrical And Magnetic Properties Of Magnetoelectric Cogaxfe2− Xo4/Batio3 Composite, Yan Ni, Zhen Zhang, Cajetan I. Nlebedim, David C. Jiles Jan 2015

Influence Of Ga-Concentration On The Electrical And Magnetic Properties Of Magnetoelectric Cogaxfe2− Xo4/Batio3 Composite, Yan Ni, Zhen Zhang, Cajetan I. Nlebedim, David C. Jiles

Electrical and Computer Engineering Publications

Multiferroic materials exhibit magnetoelectric (ME) coupling and promise new device applications including magnetic sensors, generators, and filters. An effective method for developing ME materials with enhanced ME effect is achieved by the coupling through the interfacial strain between piezoelectric and magnetostrictive materials. In this study, the electrical and magnetic properties of Ga doped magnetoelectric CoGaxFe2−xO4/BaTiO3composite are studied systematically. It is found that Ga doping improves the sensitivity of magnetoelastic response and stabilizes the magnetic phase of the composites. More importantly, Ga doping reduces the electrical conductivity of composite, as well as the dielectric loss. An enhancement of the ...


Ferromagnetism Of Magnetically Doped Topological Insulators In Crxbi2− Xte3 Thin Films, Yan Ni, Z. Zhang, Ikenna C. Nlebedim, M. Ravi Hadimani, Gary L. Tuttle, David C. Jiles Jan 2015

Ferromagnetism Of Magnetically Doped Topological Insulators In Crxbi2− Xte3 Thin Films, Yan Ni, Z. Zhang, Ikenna C. Nlebedim, M. Ravi Hadimani, Gary L. Tuttle, David C. Jiles

Electrical and Computer Engineering Publications

We investigated the effect of magnetic doping on magnetic and transport properties of Bi2Te3thin films. CrxBi2−xTe3 thin films with x = 0.03, 0.14, and 0.29 were grown epitaxially on mica substrate with low surface roughness (∼0.4 nm). It is found that Cr is an electron acceptor in Bi2Te3 and increases the magnetization of CrxBi2−xTe3. When x = 0.14 and 0.29,ferromagnetism appears in CrxBi2−xTe3 thin films, where anomalous Hall effect and weak localization of magnetoconductance were observed. The Curie temperature, coercivity, and remnant Hall resistance of thin films increase with increasing Cr concentration ...


Study Of Electronic Characteristics Of Heterojunction With Intrinsic Thin-Layer Devices And Defect Density Profile Of Nanocrystalline Silicon Germanium Devices, Watson Paul Mulder Jan 2015

Study Of Electronic Characteristics Of Heterojunction With Intrinsic Thin-Layer Devices And Defect Density Profile Of Nanocrystalline Silicon Germanium Devices, Watson Paul Mulder

Graduate Theses and Dissertations

Heterojunction with Intrinsic Thin-layer (HIT) solar cells are an important photovoltaic technology, recently reaching record power conversion efficiencies. HIT cells hold advantages over the conventional crystalline Si solar cells, such as their fabrication at lower temperatures and their shorter fabrication time. It is important to understand the electronic characteristics and transport properties of HIT cells to continue to improve their efficiencies. The fundamental measurements of a HIT solar cell with an innovative n+/p/p+ structure are presented. We also report on a series of these HIT cells fabricated on wafers with different doping concentrations, observing the relationship between doping ...


Magnetism Of Zn-Doped Sno2: Role Of Surfaces, Pushpa Raghani, Balaji Ramanujam May 2014

Magnetism Of Zn-Doped Sno2: Role Of Surfaces, Pushpa Raghani, Balaji Ramanujam

Physics Faculty Publications and Presentations

Surface effects on the magnetization of Zn-doped SnO2 are investigated using first principles method. Magnetic behavior of Zn-doped bulk and highest and lowest energy surfaces—(001) and (110), respectively, are investigated in presence and absence of other intrinsic defects. The Zn-doped (110) and (001) surfaces of SnO2 show appreciable increase in the magnetic moment (MM) compared to Zn-doped bulk SnO2. Formation energies of Zn defects on both the surfaces are found to be lower than those in bulk SnO2. Zn doping favors the formation of oxygen vacancies. The density of states analysis on the Zn-doped (110 ...


Magnetism Of Zn-Doped Sno2: Role Of Surfaces, Pushpa Raghani, Balaji Ramanujam Mar 2014

Magnetism Of Zn-Doped Sno2: Role Of Surfaces, Pushpa Raghani, Balaji Ramanujam

Pushpa Raghani

Surface effects on the magnetization of Zn-doped SnO2 are investigated using first principles method. Magnetic behavior of Zn-doped bulk and highest and lowest energy surfaces—(001) and (110), respectively, are investigated in presence and absence of other intrinsic defects. The Zn-doped (110) and (001) surfaces of SnO2 show appreciable increase in the magnetic moment (MM) compared to Zn-doped bulk SnO2. Formation energies of Zn defects on both the surfaces are found to be lower than those in bulk SnO2. Zn doping favors the formation of oxygen vacancies. The density of states analysis on the Zn-doped (110) surface reveals that the ...


Progress Towards Terahertz Acoustic Phonon Generation In Doping Superlattices, Thomas E. Wilson Feb 2014

Progress Towards Terahertz Acoustic Phonon Generation In Doping Superlattices, Thomas E. Wilson

Thomas E. Wilson

Progress is described in experiments to generate coherent terahertz acoustic phonons in silicon doping superlattices by the resonant absorption of nanosecond-pulsed far-infrared laser radiation. Future experiments are proposed that would use the superlattice as a transducer in a terahertz cryogenic acoustic reflection microscope with sub-nanometer resolution.


Anomalous Magneto-Structural Behavior Of Mnbi Explained: A Path Towards An Improved Permanent Magnet, Nikolai A. Zarkevich, Linlin Wang, Duane D. Johnson Jan 2014

Anomalous Magneto-Structural Behavior Of Mnbi Explained: A Path Towards An Improved Permanent Magnet, Nikolai A. Zarkevich, Linlin Wang, Duane D. Johnson

Ames Laboratory Publications

Low-temperature MnBi (hexagonal NiAs phase) exhibits anomalies in the lattice constants (a, c) and bulk elastic modulus (B) below 100 K, spin reorientation and magnetic susceptibilitymaximum near 90 K, and, importantly for high-temperature magnetic applications, an increasingcoercivity (unique to MnBi) above 180  K. We calculate the total energy and magneto-anisotropyenergy (MAE) versus (a, c) using DFT+U methods. We reproduce and explain all the above anomalies. We predict that coercivity and MAE increase due to increasing a, suggesting means to improve MnBi permanent magnets.


Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal Feb 2013

Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal

Faculty Publications

No abstract provided.


Applications Of High Throughput (Combinatorial) Methodologies To Electronic, Magnetic, Optical, And Energy-Related Materials, Martin L. Green, Ichiro Takeuchi, Jason R. Hattrick-Simpers Jan 2013

Applications Of High Throughput (Combinatorial) Methodologies To Electronic, Magnetic, Optical, And Energy-Related Materials, Martin L. Green, Ichiro Takeuchi, Jason R. Hattrick-Simpers

Faculty Publications

High throughput (combinatorial) materials science methodology is a relatively new research paradigm that offers the promise of rapid and efficient materials screening, optimization, and discovery. The paradigm started in the pharmaceutical industry but was rapidly adopted to accelerate materials research in a wide variety of areas. High throughput experiments are characterized by synthesis of a “library” sample that contains the materials variation of interest (typically composition), and rapid and localized measurement schemes that result in massive data sets. Because the data are collected at the same time on the same “library” sample, they can be highly uniform with respect to ...


The Effect Of Polarization And Ingan Quantum Well Shape In Multiple Quantum Well Light Emitting Diode Heterostructures, Patrick M. Mcbride Jun 2012

The Effect Of Polarization And Ingan Quantum Well Shape In Multiple Quantum Well Light Emitting Diode Heterostructures, Patrick M. Mcbride

Master's Theses

Previous research in InGaN/GaN light emitting diodes (LEDs) employing semi-classical drift-diffusion models has used reduced polarization constants without much physical explanantion. This paper investigates possible physical explanations for this effective polarization reduction in InGaN LEDs through the use of the simulation software SiLENSe. One major problem of current LED simulations is the assumption of perfectly discrete transitions between the quantum well (QW) and blocking layers when experiments have shown this to not be the case. The In concentration profile within InGaN multiple quantum well (MQW) devices shows much smoother and delayed transitions indicative of indium diffusion and drift during ...


Coexisting Pseudogap, Charge-Transfer-Gap, And Mott-Gap Energy Scales In The Resonant Inelastic X-Ray Scattering Spectra Of Electron-Doped Cuprate Superconductors, Susmita Basak, Tanmoy Das, Hsin Lin, M. Z. Hasan, R. S. Markiewicz, A. Bansil Apr 2012

Coexisting Pseudogap, Charge-Transfer-Gap, And Mott-Gap Energy Scales In The Resonant Inelastic X-Ray Scattering Spectra Of Electron-Doped Cuprate Superconductors, Susmita Basak, Tanmoy Das, Hsin Lin, M. Z. Hasan, R. S. Markiewicz, A. Bansil

Robert Markiewicz

We present a computation of Cu K-edge resonant inelastic x-ray scattering (RIXS) spectra for electron-doped cuprates, which includes coupling to bosonic fluctuations. Comparison with experiment over a wide range of energy and momentum transfers allows us to identify the signatures of three key normal-state energy scales: the pseudogap, charge-transfer gap, and Mott gap. The calculations involve a three-band Hubbard Hamiltonian based on dₓ2₋y2 and O pₓ, py orbitals, with a self-energy correction which arises due to spin and charge fluctuations. Our theory reproduces characteristic features, e.g., gap collapse, large spectral weight broadening, and spectral weight transfer as a ...


Coexisting Pseudogap, Charge-Transfer-Gap, And Mott-Gap Energy Scales In The Resonant Inelastic X-Ray Scattering Spectra Of Electron-Doped Cuprate Superconductors, Susmita Basak, Tanmoy Das, Hsin Lin, M. Z. Hasan, R. S. Markiewicz, A. Bansil Apr 2012

Coexisting Pseudogap, Charge-Transfer-Gap, And Mott-Gap Energy Scales In The Resonant Inelastic X-Ray Scattering Spectra Of Electron-Doped Cuprate Superconductors, Susmita Basak, Tanmoy Das, Hsin Lin, M. Z. Hasan, R. S. Markiewicz, A. Bansil

Hsin Lin

We present a computation of Cu K-edge resonant inelastic x-ray scattering (RIXS) spectra for electron-doped cuprates, which includes coupling to bosonic fluctuations. Comparison with experiment over a wide range of energy and momentum transfers allows us to identify the signatures of three key normal-state energy scales: the pseudogap, charge-transfer gap, and Mott gap. The calculations involve a three-band Hubbard Hamiltonian based on dₓ2₋y2 and O pₓ, py orbitals, with a self-energy correction which arises due to spin and charge fluctuations. Our theory reproduces characteristic features, e.g., gap collapse, large spectral weight broadening, and spectral weight transfer as a ...


Coexisting Pseudogap, Charge-Transfer-Gap, And Mott-Gap Energy Scales In The Resonant Inelastic X-Ray Scattering Spectra Of Electron-Doped Cuprate Superconductors, Susmita Basak, Tanmoy Das, Hsin Lin, M. Z. Hasan, R. S. Markiewicz, A. Bansil Apr 2012

Coexisting Pseudogap, Charge-Transfer-Gap, And Mott-Gap Energy Scales In The Resonant Inelastic X-Ray Scattering Spectra Of Electron-Doped Cuprate Superconductors, Susmita Basak, Tanmoy Das, Hsin Lin, M. Z. Hasan, R. S. Markiewicz, A. Bansil

Susmita Basak

We present a computation of Cu K-edge resonant inelastic x-ray scattering (RIXS) spectra for electron-doped cuprates, which includes coupling to bosonic fluctuations. Comparison with experiment over a wide range of energy and momentum transfers allows us to identify the signatures of three key normal-state energy scales: the pseudogap, charge-transfer gap, and Mott gap. The calculations involve a three-band Hubbard Hamiltonian based on dₓ2₋y2 and O pₓ, py orbitals, with a self-energy correction which arises due to spin and charge fluctuations. Our theory reproduces characteristic features, e.g., gap collapse, large spectral weight broadening, and spectral weight transfer as a ...


Coexisting Pseudogap, Charge-Transfer-Gap, And Mott-Gap Energy Scales In The Resonant Inelastic X-Ray Scattering Spectra Of Electron-Doped Cuprate Superconductors, Susmita Basak, Tanmoy Das, Hsin Lin, M. Z. Hasan, R. S. Markiewicz, A. Bansil Apr 2012

Coexisting Pseudogap, Charge-Transfer-Gap, And Mott-Gap Energy Scales In The Resonant Inelastic X-Ray Scattering Spectra Of Electron-Doped Cuprate Superconductors, Susmita Basak, Tanmoy Das, Hsin Lin, M. Z. Hasan, R. S. Markiewicz, A. Bansil

Arun Bansil

We present a computation of Cu K-edge resonant inelastic x-ray scattering (RIXS) spectra for electron-doped cuprates, which includes coupling to bosonic fluctuations. Comparison with experiment over a wide range of energy and momentum transfers allows us to identify the signatures of three key normal-state energy scales: the pseudogap, charge-transfer gap, and Mott gap. The calculations involve a three-band Hubbard Hamiltonian based on dₓ2₋y2 and O pₓ, py orbitals, with a self-energy correction which arises due to spin and charge fluctuations. Our theory reproduces characteristic features, e.g., gap collapse, large spectral weight broadening, and spectral weight transfer as a ...


Measurement Of Semiconductor Surface Potential Using The Scanning Electron Microscope, Jennifer T. Heath, Chun-Sheng Jiang, Mowafak M. Al-Jassim Jan 2012

Measurement Of Semiconductor Surface Potential Using The Scanning Electron Microscope, Jennifer T. Heath, Chun-Sheng Jiang, Mowafak M. Al-Jassim

Faculty Publications

We calibrate the secondary electron signal from a standard scanning electron microscope to voltage, yielding an image of the surface or near-surface potential. Data on both atomically abrupt heterojunction GaInP/GaAs and diffused homojunction Si solar cell devices clearly show the expected variation in potential with position and applied bias, giving depletion widths and locating metallurgical junctions to an accuracy better than 10 nm. In some images, distortion near the p-n junction is observed, seemingly consistent with the effects of lateral electric fields (patch fields). Reducing the tube bias removes this distortion. This approach results in rapid and straightforward collection ...


Magnetotransport Properties Of Mn-Si-C Based Nanostructures, Sungmu Kang, Greg A. Brewer, Battogtokh Jugdersuren, Robert Dipietro, Don Heiman, Andrew C. Buechele, David A. Mckeown, Ian L. Pegg, John Philip Dec 2011

Magnetotransport Properties Of Mn-Si-C Based Nanostructures, Sungmu Kang, Greg A. Brewer, Battogtokh Jugdersuren, Robert Dipietro, Don Heiman, Andrew C. Buechele, David A. Mckeown, Ian L. Pegg, John Philip

Donald Heiman

Boron-incorporated Mn5SiC nanowires were grown using chemical vapor deposition method. The nanowire cluster exhibits magnetic hysteresis loops at room temperature and the strength of the magnetic behavior depends on the concentration of the boron incorporation. Mn5SiC nanowire-based devices exhibit spin dependent transport properties which shows significant changes with boron content. Large magnetoresistance is observed in lightly boron-incorporated nanowire devices and it decreases with increase in boron content.