Physics Commons^™

Modeling Defect Mediated Color-Tunability In Leds With Eu-Doped Gan-Based Active Layers, Hayley J. Austin, Brandon Mitchell, Dolf Timmerman, Jun Tatebayashi, Shuhei Ichikawa, Yasufumi Fujiwara, Volkmar Dierolf

Physics & Engineering Faculty Publications

Color tunability from red to orange to yellow has been demonstrated in GaN-based LED devices with Eu-doped GaN layers as the active region. Under current injection, this is achieved by varying the current density and the pulse conditions. The underlying mechanism behind this color tunability is a redistribution of energy among the D-5(J) states of a Eu3+ ion. This energy shuffling is facilitated by a local defect that has been neglected in previous modeling work. Including this defect allows for a quantitative prediction of the relative time-averaged populations of the Eu3+ ion's D-5(0) and D-5(1) states. Extracting, from experimental results, …

Multi-Scale Computational Modeling Of Metal/Ceramic Interfaces, Abu Shama Mohammad Miraz

Master's Theses

Multi-scale atomistic calculations were carried out to understand the interfacial features that dictate the mechanical integrity of the metal/ceramic nanolaminates. As such, first principles density functional theory (DFT) calculations were performed to understand the electronic and atomistic factors governing adhesion and resistance to shear for simple metal/ceramic interfaces, whereas molecular dynamics (MD) simulations were performed to observe the impact of interfacial structures, such as misfit dislocation network geometries and orientation relationships, on interfacial mechanical properties.

For the DFT investigation, we choose metals with different crystal structures, namely - Cu (fcc), Cr (bcc) and Ti (hcp) along with a variety of …

Multi-Scale Computational Modeling Of Metal/Ceramic Interfaces, Abu Shama Mohammad Miraz

Doctoral Dissertations

Multi-scale atomistic calculations were carried out to understand the interfacial features that dictate the mechanical integrity of the metal/ceramic nanolaminates. As such, first principles density functional theory (DFT) calculations were performed to understand the electronic and atomistic factors governing adhesion and resistance to shear for simple metal/ceramic interfaces, whereas molecular dynamics (MD) simulations were performed to observe the impact of interfacial structures, such as misfit dislocation network geometries and orientation relationships, on interfacial mechanical properties.

For the DFT investigation, we choose metals with different crystal structures, namely - Cu (fcc), Cr (bcc) and Ti (hcp) along with a variety of …

Plasma Based Synthesis And Surface Modification Of Graphene., Rong Zhao

Electronic Theses and Dissertations

Graphene, an atom thick layer of carbon, has attracted intense scientific interest due to its exceptional electrical, mechanical and chemical properties. Especially, it provides a perfect platform to explore the unique electronic properties in absolute two-dimension. Pristine graphene possesses zero band gap and weakens its competitiveness in the field of semiconductors. In order to induce a band gap and control its semiconducting properties, functionalization and doping are two of the most feasible methods. In the context of functionalization, large area monolayer graphene synthesized by chemical vapor deposition was subjected to controlled and sequential fluorination using radio frequency plasma while monitoring …

The Effect Of Polarization And Ingan Quantum Well Shape In Multiple Quantum Well Light Emitting Diode Heterostructures, Patrick M. Mcbride

Master's Theses

Previous research in InGaN/GaN light emitting diodes (LEDs) employing semi-classical drift-diffusion models has used reduced polarization constants without much physical explanantion. This paper investigates possible physical explanations for this effective polarization reduction in InGaN LEDs through the use of the simulation software SiLENSe. One major problem of current LED simulations is the assumption of perfectly discrete transitions between the quantum well (QW) and blocking layers when experiments have shown this to not be the case. The In concentration profile within InGaN multiple quantum well (MQW) devices shows much smoother and delayed transitions indicative of indium diffusion and drift during …

Scanning Capacitance Spectroscopy On N+-P Asymmetrical Junctions In Multicrystalline Si Solar Cells, Chun-Sheng Jiang, Jennifer T. Heath, Helio R. Moutinho, Mowafak M. Al-Jassim

Faculty Publications

We report on a scanning capacitance spectroscopy (SCS) study on the n⁺-p junction of multicrystalline silicon solar cells. We found that the spectra taken at space intervals of ∼10 nm exhibit characteristic features that depend strongly on the location relative to the junction. The capacitance-voltage spectra exhibit a local minimum capacitance value at the electrical junction, which allows the junction to be identified with ∼10-nm resolution. The spectra also show complicated transitions from the junction to the n-region with two local capacitance minima on the capacitance-voltage curves; similar spectra to that have not been previously reported in …

Doping And Pressure Studies On Ybbipt, A. Lacerda, R. Movshovich, M. F. Hundley, Paul C. Canfield, D. Arms, G. Sparn, J. D. Thompson, Z. Fisk, N. E. Philips, H.-R. Ott

Paul C. Canfield

The compound YbBiPt exhibits an extremely large low‐temperature C/T (γ∼8 J K−2 mol−1/Yb) which, if due solely to a renormalized effective mass, would make this material the heaviest correlated electron system known to date. In the Kondo model, the very large γ corresponds to a small characteristic energy scale that is expected to be pressure dependent. We have studied the effect of chemical pressure on YbBiPt single crystals by heat‐capacity measurements on Y and Lu‐doped samples. We have also made preliminary low‐temperature measurements under hydrostatic pressure of the heat capacity (300 mK≤T≤2 K, up to 8 kbar) and resistance (30 …