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Full-Text Articles in Physics
Temperature Dependence Of Optical Properties For Amorphous Silicon At Wavelengths Of 632.8 And 752 Nm, P.T. Leung, Nhan Do, Oguz Yavas, Andrew C. Tam, Wing P. Leung, Hee K. Park, Costas P. Grigoropoulos, Johannes Boneberg, Paul Leiderer
Temperature Dependence Of Optical Properties For Amorphous Silicon At Wavelengths Of 632.8 And 752 Nm, P.T. Leung, Nhan Do, Oguz Yavas, Andrew C. Tam, Wing P. Leung, Hee K. Park, Costas P. Grigoropoulos, Johannes Boneberg, Paul Leiderer
Physics Faculty Publications and Presentations
The temperature dependence of the optical properties for amorphous silicon is studied at wavelengths of 632.8 and 752 nm. Both the refractive index and extinction coefficient increase linearly with temperature for 752 nm, while the refractive index decreases and the extinction coefficient increases for 632.8 nm. The rate of increase of the extinction coefficient at 632.8 nm is twice as much as that for 752 nm.
Transmission Studies Of Explosive Vaporization Of A Transparent Liquid Film On An Opaque Solid Surface Induced By Excimer-Laser-Pulsed Irradiation, P.T. Leung, Nhan Do, Leander Klees, Wing P. Leung, Frank Tong
Transmission Studies Of Explosive Vaporization Of A Transparent Liquid Film On An Opaque Solid Surface Induced By Excimer-Laser-Pulsed Irradiation, P.T. Leung, Nhan Do, Leander Klees, Wing P. Leung, Frank Tong
Physics Faculty Publications and Presentations
Examines the dynamics of the explosion of a liquid film by an ultraviolet excimer pulsed laser studied experimentally on top of an amorphous silicon film deposited on fused quartz. Background on thermal physics of superheated pure or mixed liquids; Techniques for surface temperature measurement; Experimental of probe laser and pulsed excimer laser.
Auger Analysis Of Si–H Bonding And Hydrogen Concentration In Hydrogenated Amorphous Silicon, Nancy Burnham, Aj Nelson, Ab Schwartzlander, Se Asher, Ll Kazmerski
Auger Analysis Of Si–H Bonding And Hydrogen Concentration In Hydrogenated Amorphous Silicon, Nancy Burnham, Aj Nelson, Ab Schwartzlander, Se Asher, Ll Kazmerski
Nancy A. Burnham
Auger electron spectroscopy line‐shape analysis of the Si‐L 2 3 V V peak has been performed on hydrogenated amorphous silicon (a‐Si:H). Both a‐Si:H produced by hydrogen implantation of siliconsingle crystals (for analytical standards) and thin films (fabricated for solar cell applications) were examined in these studies. Hydrogen concentrations were confirmed by secondary ion mass spectrometry, and samples having hydrogen content over the range 101 6–102 2 cm− 3 were evaluated. Correlations between the area under the deconvoluted L 2 3 V V transition peak and the known hydrogen content have resulted in a semiquantitative method of determining hydrogen concentration using …
New Thin-Film Tunnel Triode Using Amorphous Semiconductors, Pavel Smejtek, R. F. Shaw, H. Fritzsche, M. Silver, S. Holmberg, S. R. Ovshinsky
New Thin-Film Tunnel Triode Using Amorphous Semiconductors, Pavel Smejtek, R. F. Shaw, H. Fritzsche, M. Silver, S. Holmberg, S. R. Ovshinsky
Physics Faculty Publications and Presentations
A new thin‐film tunnel triode is discussed which uses a p‐type amorphous film to achieve amplification of injected current from a tunnel cathode. It is not only the basis for a new semiconductor device but also suggests a novel method for measuring electrical properties of semiconductors.