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Full-Text Articles in Physics
Giant Surface-Plasmon-Induced Drag Effect (Spider) In Metal Nanowires, Maxim Durach, Anastasia Rusina, Mark I. Stockman
Giant Surface-Plasmon-Induced Drag Effect (Spider) In Metal Nanowires, Maxim Durach, Anastasia Rusina, Mark I. Stockman
Anastasia Rusina
Here, for the first time we predict a giant surface-plasmon-induced drag-effect rectification (SPIDER), which exists under conditions of the extreme nanoplasmonic confinement. In nanowires, this giant SPIDER generates rectified THz potential differences up to 10 V and extremely strong electric fields up to ∼105–106 V/cm. The giant SPIDER is an ultrafast effect whose bandwidth for nanometric wires is ∼20 THz. It opens up a new field of ultraintense THz nanooptics with wide potential applications in nanotechnology and nanoscience, including microelectronics, nanoplasmonics, and biomedicine.
Antivortex Dynamics In Magnetic Nanostripes, Andrew Kunz, Eric C. Breitbach, Andy J. Smith
Antivortex Dynamics In Magnetic Nanostripes, Andrew Kunz, Eric C. Breitbach, Andy J. Smith
Physics Faculty Research and Publications
In a thin magnetic nanostripe, an antivortex nucleates inside a moving domain wall when driven by an in-plane magnetic field greater than the so-called Walker field. The nucleated antivortex must cross the width of the nanostripe before the domain wall can propagate again, leading to low average domain wall speeds. A large out-of-plane magnetic field, applied perpendicularly to the plane of the nanostripe, inhibits the nucleation of the antivortex leading to fast domain wall speeds for all in-plane driving fields. We present micromagnetic simulation results relating the antivortex dynamics to the strength of the out-of-plane field. An asymmetry in the …
Dependence Of Domain Wall Structure For Low Field Injection Into Magnetic Nanowires, Andrew Kunz, Sarah C. Reiff
Dependence Of Domain Wall Structure For Low Field Injection Into Magnetic Nanowires, Andrew Kunz, Sarah C. Reiff
Physics Faculty Research and Publications
Micromagnetic simulation is used to model the injection of a domain wall into a magnetic nanowire with field strengths less than the so-called Walker field. This ensures fast, reliable motion of the wall. When the wire is located at the edge of a small injecting disk, a bias field used to control the orientation of the domain wall can reduce the pinning potential of the structure. The low field injection is explained by a simple model, which relies on the topological nature of a domain wall. The technique can quickly inject multiple domain walls with a known magnetic structure.
Field Induced Domain Wall Collisions In Thin Magnetic Nanowires, Andrew Kunz
Field Induced Domain Wall Collisions In Thin Magnetic Nanowires, Andrew Kunz
Physics Faculty Research and Publications
In a two-dimensional magnetic nanowire, it is possible to engineer collisions between two domain walls put into motion by an externally applied field. We show that the topological defects that define the domain wall can be controlled to allow for both domain wall annihilation and preservation during the collisions as long as the wire remains thin. The preservation process can be used to release pinned domain walls from notches with small applied fields.
Voltage-Induced Switching With Magnetoresistance Signature In Magnetic Nano-Filaments, Andrei Sokolov, Renat F. Sabirianov, Ildar F. Sabiryanov, Bernard Doudin
Voltage-Induced Switching With Magnetoresistance Signature In Magnetic Nano-Filaments, Andrei Sokolov, Renat F. Sabirianov, Ildar F. Sabiryanov, Bernard Doudin
Physics Faculty Publications
Large hysteretic resistance changes are reported on sub-100 nm diameter metallic nanowires including thin dielectric junctions. Bi-stable 50% switching in a double junction geometry is modeled in terms of an occupation-driven metal–insulator transition in one of the two junctions, using the generalized Poisson expressions of Oka and Nagaosa (2005 Phys. Rev. Lett. 95 266403). It illustrates how a band bending scheme can be generalized for strongly correlated electron systems. The magnetic constituents of the nanowires provide a magnetoresistive signature of the two resistance states, confirming our model and enabling a four states device application.