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Full-Text Articles in Physics
Reversal Of Spin Polarization In Fe/Gaas (001) Driven By Resonant Surface States: First-Principles Calculations, Athanasios N. Chantis, Kirill D. Belashchenko, D. L. Smith, Evgeny Y. Tsymbal, Mark Van Schilfgaarde, R. C. Albers
Reversal Of Spin Polarization In Fe/Gaas (001) Driven By Resonant Surface States: First-Principles Calculations, Athanasios N. Chantis, Kirill D. Belashchenko, D. L. Smith, Evgeny Y. Tsymbal, Mark Van Schilfgaarde, R. C. Albers
Evgeny Tsymbal Publications
A minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polarization with the voltage bias of electrons transmitted across this interface. Using a Green's function approach within the local spin-density approximation, we calculate the spin-dependent current in a Fe/GaAs/Cu tunnel junction as a function of the applied bias voltage. We find a change in sign of the spin polarization of tunneling electrons with bias voltage due to the interface minority-spin resonance. This result explains recent experimental data on spin injection in Fe/GaAs contacts and on tunneling magnetoresistance in Fe/GaAs/Fe magnetic tunnel junctions.
Bias Voltage Dependence Of Tunneling Anisotropic Magnetoresistance In Magnetic Tunnel Junctions With Mgo And Al2O3 Tunnel Barriers, Li Gao, Xin Jiang, See-Hun Yang, John D. Burton, Evgeny Y. Tsymbal, Stuart S. P. Parkin
Bias Voltage Dependence Of Tunneling Anisotropic Magnetoresistance In Magnetic Tunnel Junctions With Mgo And Al2O3 Tunnel Barriers, Li Gao, Xin Jiang, See-Hun Yang, John D. Burton, Evgeny Y. Tsymbal, Stuart S. P. Parkin
Evgeny Tsymbal Publications
Tunneling anisotropic magnetoresistance (TAMR) is observed in tunnel junctions with transition metal electrodes as the moments are rotated from in-plane to out-of-plane in sufficiently large magnetic fields that the moments are nearly parallel to one another. A complex angular dependence of the tunneling resistance is found with twofold and fourfold components that vary strongly with bias voltage. Distinctly different TAMR behaviors are obtained for devices formed with highly textured crystalline MgO(001) and amorphous Al2O3 tunnel barriers. A tight-binding model shows that a fourfold angular dependence can be explained by the presence of an interface resonant state that …
Defect-Mediated Properties Of Magnetic Tunnel Junctions, Julian P. Velev, Mikhail Ye Zhuravlev, Kirill D. Belashchenko, Sitaram S. Jaswal, Evgeny Y. Tsymbal, T. Katayama, S. Yuasa
Defect-Mediated Properties Of Magnetic Tunnel Junctions, Julian P. Velev, Mikhail Ye Zhuravlev, Kirill D. Belashchenko, Sitaram S. Jaswal, Evgeny Y. Tsymbal, T. Katayama, S. Yuasa
Evgeny Tsymbal Publications
Defects play an important role in the properties of metal oxides which are currently used as barrier layers in magnetic tunnel junctions (MTJs). We study the effect of O vacancies on the interlayer exchange coupling (IEC) and tunneling magnetoresistance (TMR) in Fe–MgO–Fe tunnel junctions. Measurements of IEC in fully epitaxial Fe–MgO–Fe(001) tunnel junctions show IEC is antiferromagnetic (AFM) for small MgO thickness but changes sign and then vanishes for large barrier thickness. First-principles calculations based on density functional theory demonstrate that the presence of neutral O vacancies (F-centers) in the MgO barrier can explain this behavior. Resonant tunneling …
Interface Effects In Spin-Dependent Tunneling, Evgeny Y. Tsymbal, Kirill D. Belashchenko, Julian P. Velev, Sitaram Jaswal, Mark Van Schilfgaarde, Ivan I. Oleynik, Derek A. Stewart
Interface Effects In Spin-Dependent Tunneling, Evgeny Y. Tsymbal, Kirill D. Belashchenko, Julian P. Velev, Sitaram Jaswal, Mark Van Schilfgaarde, Ivan I. Oleynik, Derek A. Stewart
Evgeny Tsymbal Publications
In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible application in random access memories and magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. One such question is the role of interfaces in MTJs and their effect on the spin polarization of the tunneling current and TMR. In this paper we consider different models which suggest that the …
Atomic Motion In Ferromagnetic Break Junctions: Comment And Response, S.-F. Shi, David C. Ralph, Andrei Sokolov, Chunjuan Zhang, Evgeny Y. Tsymbal, Jody G. Redepenning, Bernard Doudin
Atomic Motion In Ferromagnetic Break Junctions: Comment And Response, S.-F. Shi, David C. Ralph, Andrei Sokolov, Chunjuan Zhang, Evgeny Y. Tsymbal, Jody G. Redepenning, Bernard Doudin
Evgeny Tsymbal Publications
Authors’ response
In their comment, Shi and Ralph emphasize that conductance of Ni point contacts produced by an electro-migration technique can occasionally exhibit two-level fluctuations (TLF), mimicking the discrete steps in the conductance of the point contacts as a function of the applied magnetic-field direction. They explain the nature of these steps in terms of atomic motion rather than intrinsic electronic effect. We emphasize in this reply that our results, obtained on a different magnetic material synthesized by a different method, do not show a