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Articles 1 - 30 of 36
Full-Text Articles in Physics
Charge Effects In Bilayer Electric Transport, Christopher Czech
Charge Effects In Bilayer Electric Transport, Christopher Czech
All Theses
The mathematical isomorphism between the layer index in a bilayer system and the spin index in a spin-polarized system is used to draw an analogy between phenomena that occur in the two systems as a result of the electron-electron (e-e) interaction. First, the classical case of the Coulomb drag, a phenomenon resulting from momentum transfer through e-e collisions, is reviewed for both bilayer systems and spin-polarized systems. Then, the spin-backflow phenomenon, a result of the interaction-induced changes in the local quasiparticle energy that affects the charge transport in spin-polarized systems is presented. Finally, the iso-spin correlation is exploited to establish …
Spin Density Wave Phases In Semiconductor Superlattice, Liqiu Zheng
Spin Density Wave Phases In Semiconductor Superlattice, Liqiu Zheng
All Dissertations
We discuss the existence of spin instabilities and of possible ground states with broken spin symmetry in the presence of a tilted magnetic field for several semiconductor heterostructures. In each instance, the fundamental premise of our study is the existence of a spin degeneracy, controlled by tuning various experimentally controllable parameters, that permits the apparition of spin-flip processes driven entirely by the many-body Coulomb interaction. If in the case of a single quantum well, the spin instabilities trigger an abrupt paramagnetic to ferromagnetic phase transition, we demonstrate that in superlattices, at low temperatures, a stable spin density wave ($SDW$) ground …
Reversal Of Spin Polarization In Fe/Gaas (001) Driven By Resonant Surface States: First-Principles Calculations, Athanasios N. Chantis, Kirill D. Belashchenko, D. L. Smith, Evgeny Y. Tsymbal, Mark Van Schilfgaarde, R. C. Albers
Reversal Of Spin Polarization In Fe/Gaas (001) Driven By Resonant Surface States: First-Principles Calculations, Athanasios N. Chantis, Kirill D. Belashchenko, D. L. Smith, Evgeny Y. Tsymbal, Mark Van Schilfgaarde, R. C. Albers
Evgeny Tsymbal Publications
A minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polarization with the voltage bias of electrons transmitted across this interface. Using a Green's function approach within the local spin-density approximation, we calculate the spin-dependent current in a Fe/GaAs/Cu tunnel junction as a function of the applied bias voltage. We find a change in sign of the spin polarization of tunneling electrons with bias voltage due to the interface minority-spin resonance. This result explains recent experimental data on spin injection in Fe/GaAs contacts and on tunneling magnetoresistance in Fe/GaAs/Fe magnetic tunnel junctions.
Bias Voltage Dependence Of Tunneling Anisotropic Magnetoresistance In Magnetic Tunnel Junctions With Mgo And Al2O3 Tunnel Barriers, Li Gao, Xin Jiang, See-Hun Yang, John D. Burton, Evgeny Y. Tsymbal, Stuart S. P. Parkin
Bias Voltage Dependence Of Tunneling Anisotropic Magnetoresistance In Magnetic Tunnel Junctions With Mgo And Al2O3 Tunnel Barriers, Li Gao, Xin Jiang, See-Hun Yang, John D. Burton, Evgeny Y. Tsymbal, Stuart S. P. Parkin
Evgeny Tsymbal Publications
Tunneling anisotropic magnetoresistance (TAMR) is observed in tunnel junctions with transition metal electrodes as the moments are rotated from in-plane to out-of-plane in sufficiently large magnetic fields that the moments are nearly parallel to one another. A complex angular dependence of the tunneling resistance is found with twofold and fourfold components that vary strongly with bias voltage. Distinctly different TAMR behaviors are obtained for devices formed with highly textured crystalline MgO(001) and amorphous Al2O3 tunnel barriers. A tight-binding model shows that a fourfold angular dependence can be explained by the presence of an interface resonant state that …
Posterminaries: More Or Less Modern, Alexander H. King
Posterminaries: More Or Less Modern, Alexander H. King
Alexander H. King
It is yet another sign that I am aging. More and more often when young researchers hand me a written report of their research, I find myself criticizing their introductory section: “You need to start your literature survey with the original papers on this topic. Go and read…” followed by a citation to some classic of the learned literature.
Effect Of Tip Resonances On Tunnelling Anisotropic Magnetoresistance In Ferromagnetic Break Junctions: A First-Principles Study, John D. Burton, Renat F. Sabirianov, Julian P. Velev, O. N. Mryasov, Evgeny Y. Tsymbal
Effect Of Tip Resonances On Tunnelling Anisotropic Magnetoresistance In Ferromagnetic Break Junctions: A First-Principles Study, John D. Burton, Renat F. Sabirianov, Julian P. Velev, O. N. Mryasov, Evgeny Y. Tsymbal
Materials Research Science and Engineering Center: Faculty Publications
First-principles calculations of electron tunneling transport in nanoscale Ni and Co break-junctions reveal strong dependence of the conductance on the magnetization direction, an effect known as tunneling anisotropic magnetoresistance TAMR. An important aspect of this phenomenon stems from resonant states localized in the electrodes near the junction break. The energy and broadening of these states is strongly affected by the magnetization orientation due to spin-orbit coupling, causing TAMR to be sensitive to bias voltage on a scale of a few millivolts. Our results bear a resemblance to recent experimental data and suggest that TAMR driven by resonant states is a …
Growth-Temperature Optimization For Low Carrier-Density In0.75Ga0.25As-Based High Electron Mobility Transistors On Inp, Paul J. Simmonds, H. E. Beere, D. A. Ritchie, S. N. Holmes
Growth-Temperature Optimization For Low Carrier-Density In0.75Ga0.25As-Based High Electron Mobility Transistors On Inp, Paul J. Simmonds, H. E. Beere, D. A. Ritchie, S. N. Holmes
Paul J. Simmonds
Two-dimensional electron gases (2DEGs) were formed in undoped In0.75Al0.25As / In0.75Ga0.25As / In0.75Al0.25As quantum wells. The optimal growth temperature for this structure is 410°C, with peak 2DEG electron mobility and density values of μ = 221000 cm2/V s and n = 1.36 × 1011 cm−2 at 1.5 K. This electron mobility is equal to the highest previously published for these undoped structures but with a factor of 2 reduction in n. This has been achieved through the use of a significantly thinner InAlAs …
Quantum Dot Resonant Tunneling Diodes For Telecom Wavelength Single Photon Detection, H. W. Li, Paul J. Simmonds, H. E. Beere, B. E. Kardynał, D. A. Ritchie, A. J. Shields
Quantum Dot Resonant Tunneling Diodes For Telecom Wavelength Single Photon Detection, H. W. Li, Paul J. Simmonds, H. E. Beere, B. E. Kardynał, D. A. Ritchie, A. J. Shields
Paul J. Simmonds
Single photon detection was realized at a telecom wavelength with quantum dot resonant tunneling diodes grown on an InP substrate. The structure contains a AlAs/In0.53Ga0.47As/AlAs quantum well with InAs quantum dots grown on the top AlAs barrier. The single photon detection efficiency of the device under 1310 nm illumination was measured to be about 0.35% ± 0.07% with a dark count rate of 1.58×10-6 ns-1. This corresponds to an internal efficiency of 6.3%.
The Thermoelectric Properties Investigation Of Ir3Ge7 Typed Representatives, Huqin Zhang
The Thermoelectric Properties Investigation Of Ir3Ge7 Typed Representatives, Huqin Zhang
All Theses
Energy conversion is employed to power generation utilizing the Seebeck effect or cooling utilizing the Peltier effect. Herein, we study several Ir3Ge7 typed semiconductor materials for potential thermoelectric energy conversion. Mo3Sb7, crystallizing in Ir3Ge7 type, can be rendered semiconducting by a partial Sb-Te substitution without noticeable structure changes, resulting in Mo3Sb5Te2 with 55 valence electrons per formula unit. Meanwhile, large cubic voids in the Mo3Sb5Te2 crystal structure provide the possibility of filling the voids with small cations to decrease the …
Comparison Of Thermoelectric Properties Of Arc-Melted And Hot-Pressed Half-Heuslers, Brad Edwards
Comparison Of Thermoelectric Properties Of Arc-Melted And Hot-Pressed Half-Heuslers, Brad Edwards
All Theses
Relatively low thermal conductivity and great electrical properties in combination with wide tuning parameters through doping make half-Heuslers high potential thermoelectric materials. In this study we plan to investigate the effects of hot-pressing and arc-melting on the thermoelectric properties of ZrNiSn0.975Sb0.025, and Hf0.75Zr0.25NiSn0.975Sb0.025 samples. Also, the effects of electron and phonon scattering due to the insertion of small 50 nm particles within the sample were investigated in ZrNiSn0.975Sb0.025 +4% Al2O3 and Hf0.75Zr0.25NiSn0.975Sb0.025 +4% Al2O …
Comparison Between Steady State And Laser Flash Techniques, Justine Andrews
Comparison Between Steady State And Laser Flash Techniques, Justine Andrews
All Theses
Thermoelectrics is a promising avenue of energy conservation. A material is deemed a good thermoelectric material when it portrays certain material characteristics. These characteristics include a high thermopower and electrical conductivity and a low thermal conductivity. This thesis focuses on the methods of measuring a material's thermal conductivity.
The steady state method is a measurement technique used in the low temperature thermal conductivity measurements. This technique assures that the system and sample are at equilibrium before a measurement point is taken. As a result the measurements are both precise and accurate.
The laser flash technique measures a sample's thermal conductivity …
Quantum Dot Resonant Tunneling Diode For Telecommunication Wavelength Single Photon Detection, H. W. Li, B. E. Kardynał, P. See, A. J. Shields, P. Simmonds, H. E. Beere, D. A. Ritchie
Quantum Dot Resonant Tunneling Diode For Telecommunication Wavelength Single Photon Detection, H. W. Li, B. E. Kardynał, P. See, A. J. Shields, P. Simmonds, H. E. Beere, D. A. Ritchie
Paul J. Simmonds
The authors present a quantum dot (QD) based single photon detector operating at a fiber optic telecommunication wavelength. The detector is based on an AlAs/In0.53Ga0.47As/AlAs double-barrier resonant tunneling diode containing a layer of self-assembled InAs QDs grown on an InP substrate. The device shows an internal efficiency of about 6.3% with a dark count rate of 1.58 × 10−6 ns−1 for 1310 nm photons.
Electronic Structure Of Mos2 Nanotubes, Lingyun Xu
Electronic Structure Of Mos2 Nanotubes, Lingyun Xu
All Dissertations
First-principles methods enable one to study the electronic structure of solids, surfaces, or clusters as accurately as possible with moderate computational effort.
So we used a first-principles electronic structure method to calculate the electronic structure of free-standing layer of MoS2 with ABA and ABC stacking. Our results suggest MoS2 with ABA stacking which appears as an insulator has an energy gap of 1.64 eV. The covalent bonds between molybdenum and sulfur atoms are strong enough to form this gap. The ABC stacking will break the symmetry and becomes metallic. The valance and impurities calculations show the rigid-band picture …
Transport Critical Currents In Ybacuo-Based Coated Conductors: Angular, Magnetic Field, And Temperature Dependencies, Samuel M. Travaglini
Transport Critical Currents In Ybacuo-Based Coated Conductors: Angular, Magnetic Field, And Temperature Dependencies, Samuel M. Travaglini
Masters Theses
High-temperature superconductivity has been a focus of much study over the past 20 years, particularly within the cuprate class of superconductors. The effectiveness of these cuprate superconductors is limited by factors including the formation of vortices within the superconductor, orientation within external magnetic fields, the strength of these magnetic fields, temperature, and whether any doping agents have been used. Any of these factors individually can affect the transport critical current levels. In this research, YBaCuO and NdBaCuO-based coated conductors were studied in a liquid-nitrogen-cooled environment at either 77 K or 65 K. Field levels were varied between 0 T and …
Quantum Analysis Of A Linear Dc Squid Mechanical Displacement Detector, M. P. Blencowe, E. Buks
Quantum Analysis Of A Linear Dc Squid Mechanical Displacement Detector, M. P. Blencowe, E. Buks
Dartmouth Scholarship
We provide a quantum analysis of a dc SQUID mechanical displacement detector within the subcritical Josephson current regime. A segment of the SQUID loop forms the mechanical resonator and motion of the latter is transduced inductively through changes in the flux threading the loop. Expressions are derived for the detector signal response and noise, which are used to evaluate the position and force detection sensitivity. We also investigate cooling of the mechanical resonator due to detector back reaction.
Control Of Porosity In Fluoride Thin Films Prepared By Vapor Deposition, Alexander H. King
Control Of Porosity In Fluoride Thin Films Prepared By Vapor Deposition, Alexander H. King
Alexander H. King
We have measured the porosity in thin films of lithium fluoride (LiF), magnesium fluoride (MgF2), barium fluoride (BaF2), and calcium fluoride (CaF2) as a function of the substrate temperature for films deposited by thermal evaporation onto glass substrates. The amount of porosity in the thin films was measured using an atomic force microscope and a quartz crystal thickness monitor. The porosity was very sensitive to the substrate temperature and decreased as the substrate temperature increased. Consistent behavior was observed among all of the materials in this study.
Posterminaries: Full Circle, Alexander H. King
Posterminaries: Full Circle, Alexander H. King
Alexander H. King
A few years ago, I was walking near the old Union Station in Pittsburgh with a colleague only slightly younger than myself, when we happened upon some large-scale relics of the steel industry displayed for public viewing. “You don’t see too many of those in public parking lots,” I offered. “Um… what is it?” was the response. I suppose I was just a little surprised that a prominent materials scientist did not recognize a Bessemer converter—arguably the principal source of wealth during the U.S. industrial revolution—but this conversation took place back when steel was in decline, and many university Materials …
Density Functional Study Of Structural Trends For Late-Transition-Metal 13-Atom Clusters, Lin-Lin Wang, Duane D. Johnson
Density Functional Study Of Structural Trends For Late-Transition-Metal 13-Atom Clusters, Lin-Lin Wang, Duane D. Johnson
Duane D. Johnson
Because reactivity increases as particle size decreases and competition between numerous structures are possible, which affects catalytic and magnetic properties, we study the structural trends of late-transition-metal 13-atom clusters using density functional theory within the generalized gradient approximation to exchange-correlation functional. We consider open structural motifs, such as bilayer and cubic (recently found to have lower energy), and find new bilayer candidates that are even lower in energy. To study the influence of d-orbital filling on structural trends, we focus on Pt, Pd, and Rh clusters and find several new, low-energy structures for Pt13 and Pd13 from searches using a …
Defect-Mediated Properties Of Magnetic Tunnel Junctions, Julian P. Velev, Mikhail Ye Zhuravlev, Kirill D. Belashchenko, Sitaram S. Jaswal, Evgeny Y. Tsymbal, T. Katayama, S. Yuasa
Defect-Mediated Properties Of Magnetic Tunnel Junctions, Julian P. Velev, Mikhail Ye Zhuravlev, Kirill D. Belashchenko, Sitaram S. Jaswal, Evgeny Y. Tsymbal, T. Katayama, S. Yuasa
Evgeny Tsymbal Publications
Defects play an important role in the properties of metal oxides which are currently used as barrier layers in magnetic tunnel junctions (MTJs). We study the effect of O vacancies on the interlayer exchange coupling (IEC) and tunneling magnetoresistance (TMR) in Fe–MgO–Fe tunnel junctions. Measurements of IEC in fully epitaxial Fe–MgO–Fe(001) tunnel junctions show IEC is antiferromagnetic (AFM) for small MgO thickness but changes sign and then vanishes for large barrier thickness. First-principles calculations based on density functional theory demonstrate that the presence of neutral O vacancies (F-centers) in the MgO barrier can explain this behavior. Resonant tunneling …
Growth By Molecular Beam Epitaxy Of Self-Assembled Inas Quantum Dots On Inalas And Ingaas Lattice-Matched To Inp, Paul J. Simmonds, H W. Li, H E. Beere, P See, A J. Shields, D A. Ritchie
Growth By Molecular Beam Epitaxy Of Self-Assembled Inas Quantum Dots On Inalas And Ingaas Lattice-Matched To Inp, Paul J. Simmonds, H W. Li, H E. Beere, P See, A J. Shields, D A. Ritchie
Paul J. Simmonds
The authors report the results of a detailed study of the effect of growth conditions, for molecular beam epitaxy, on the structural and optical properties of self-assembled InAs quantum dots (QDs) on In0.524Al0.476As. InAs QDs both buried in, and on top of, In0.524Al0.476As were analyzed using photoluminescence (PL) and atomic force microscopy. InAs QD morphology and peak PL emission wavelength both scale linearly with deposition thickness in monolayers (MLs). InAs deposition thickness can be used to tune QD PL wavelength by 170 nm/ML, over a range of almost 700 nm. Increasing growth …
Raman Spectroscopic Evidence For Anharmonic Phonon Lifetimes And Blueshifts In 1d Structures, Rahul Rao
Raman Spectroscopic Evidence For Anharmonic Phonon Lifetimes And Blueshifts In 1d Structures, Rahul Rao
All Dissertations
Anharmonic effects in two different quasi-1D systems were probed via micro-Raman spectroscopy. In the first system, we observed upshifts of peaks in the Raman spectra for b-Ga2O3 nanowires grown along the [110] growth direction compared those present in bulk b-Ga2O3. Contrary to our Raman studies on -Ga2O3 nanowires, downshifts in the Raman spectrum for b-Ga2O3 nanowires grown along [401] direction has also been reported by other research groups. We attribute these Raman shifts to the growth direction-induced lattice strains (compressive and tensile) present in the nanowires, and present a model based on the quasi-harmonic density functional theory to support our …
Arrays Of Interacting Nanostructures: Ferromagnetic And Superconducting Cases, Andrei Ursache
Arrays Of Interacting Nanostructures: Ferromagnetic And Superconducting Cases, Andrei Ursache
Andrei E. Ursache
No abstract provided.
Nondiffusive Spin Dynamics In A Two-Dimensional Electron Gas, Christopher P. Weber, J. Orenstein, B. Andrei Bernevig, Shou-Cheng Zhang, Jason Stephens, D. D. Awschalom
Nondiffusive Spin Dynamics In A Two-Dimensional Electron Gas, Christopher P. Weber, J. Orenstein, B. Andrei Bernevig, Shou-Cheng Zhang, Jason Stephens, D. D. Awschalom
Physics
We describe measurements of spin dynamics in the two-dimensional electron gas in GaAs=GaAlAs quantum wells. Optical techniques, including transient spin-grating spectroscopy, are used to probe the relaxation rates of spin polarization waves in the wave vector range from zero to 6 x 104 cm-1. We find that the spin polarization lifetime is maximal at a nonzero wave vector, in contrast with expectations based on ordinary spin diffusion, but in quantitative agreement with recent theories that treat diffusion in the presence of spin-orbit coupling
Interface Effects In Spin-Dependent Tunneling, Evgeny Y. Tsymbal, Kirill D. Belashchenko, Julian P. Velev, Sitaram Jaswal, Mark Van Schilfgaarde, Ivan I. Oleynik, Derek A. Stewart
Interface Effects In Spin-Dependent Tunneling, Evgeny Y. Tsymbal, Kirill D. Belashchenko, Julian P. Velev, Sitaram Jaswal, Mark Van Schilfgaarde, Ivan I. Oleynik, Derek A. Stewart
Evgeny Tsymbal Publications
In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible application in random access memories and magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. One such question is the role of interfaces in MTJs and their effect on the spin polarization of the tunneling current and TMR. In this paper we consider different models which suggest that the …
Ferroelectric Properties Of Langmuir-Blodgett Copolymer Films At The Nanoscale, A. Tolstousov, R. V. Gaynutdinov, R. Tadros-Morgane, Herbert Kliem, Stephen Ducharme, Vladimir M. Fridkin
Ferroelectric Properties Of Langmuir-Blodgett Copolymer Films At The Nanoscale, A. Tolstousov, R. V. Gaynutdinov, R. Tadros-Morgane, Herbert Kliem, Stephen Ducharme, Vladimir M. Fridkin
Stephen Ducharme Publications
Langmuir-Blodgett (LB) films are well known structures prepared as a result of successive transfer of monolayers (ML) from the gas-liquid interface onto solid substrates. One impressive possibility of LB method is the opportunity to vary the thickness of the film to an accuracy of one transfer, which could coincide with one ML. The ferroelectric properties of a copolymer of vinylidene fluoride and trifluorethylene P[VDF-TrFE] prepared by LB deposition are investigated in the region of a few monolayers.
Atomic Motion In Ferromagnetic Break Junctions: Comment And Response, S.-F. Shi, David C. Ralph, Andrei Sokolov, Chunjuan Zhang, Evgeny Y. Tsymbal, Jody G. Redepenning, Bernard Doudin
Atomic Motion In Ferromagnetic Break Junctions: Comment And Response, S.-F. Shi, David C. Ralph, Andrei Sokolov, Chunjuan Zhang, Evgeny Y. Tsymbal, Jody G. Redepenning, Bernard Doudin
Evgeny Tsymbal Publications
Authors’ response
In their comment, Shi and Ralph emphasize that conductance of Ni point contacts produced by an electro-migration technique can occasionally exhibit two-level fluctuations (TLF), mimicking the discrete steps in the conductance of the point contacts as a function of the applied magnetic-field direction. They explain the nature of these steps in terms of atomic motion rather than intrinsic electronic effect. We emphasize in this reply that our results, obtained on a different magnetic material synthesized by a different method, do not show a
Thermal Effects On Mechanical Grinding-Induced Surface Texture In Tetragonal Piezoelectrics, Wonyoung Chang, Alexander H. King, Keith J. Bowman
Thermal Effects On Mechanical Grinding-Induced Surface Texture In Tetragonal Piezoelectrics, Wonyoung Chang, Alexander H. King, Keith J. Bowman
Alexander H. King
The effect of temperature on grinding-induced texture in tetragonal lead zirconate titanate (PZT) and lead titanate (PT) has been investigated using in situ x-ray diffraction (XRD) with an area detector. In contrast with previous results on electrical poling, mechanically-ground PT and soft PZT materials retain strong ferroelastic textures during thermal cycling, even after excursions to temperatures slightly above the Curie temperature. The relationship between the residual stresses in the surface region, caused by grinding, and those resulting from domain wall motion is elucidated by in situ texture measurements obtained during thermal cycling.
How Surface Stresses Lead To Size-Dependent Mechanics Of Tensile Deformation In Nanowires, M. Ravi Shankar, Alexander H. King
How Surface Stresses Lead To Size-Dependent Mechanics Of Tensile Deformation In Nanowires, M. Ravi Shankar, Alexander H. King
Alexander H. King
It has been proposed that surface and interface stresses can modify the elastic behavior in nanomaterials such as nanowires. The authors show that surface stresses modify the tensile response of nanowires only when nonlinear elastic effects become important leading to cross terms between the applied stress and the surface stress. These effects are only significant when the radius of the nanowire is of the order of a few nanometers. The resulting alteration of tensile stiffness, though effected in part by the nonlinear elastic modulus, is particularly wrought by a modification of the stress state in the deformed nanowire.
Energy Pathways And Directionality In Deformation Twinning, S. Kibey, J. B. Liu, Duane D. Johnson, H. Sehitoglu
Energy Pathways And Directionality In Deformation Twinning, S. Kibey, J. B. Liu, Duane D. Johnson, H. Sehitoglu
Duane D. Johnson
We present ab initiodensity functional theory calculations of twinning energy pathways for two opposite twinning modes, (111)[112¯] and (111)[1¯1¯2], in fcc materials to examine the directional nature of twinning which cannot be explained by classical twin nucleationmodels or the “twinnability” criterion. By accounting for these energy pathways in a multiscale model, we quantitatively predict the critical twinning stress for the (111)[1¯1¯2] mode to be substantially higher compared to the favorable (111)[112¯] mode (whose predicted stresses are in agreement with experiment), thus, ruling out twinning in the (111)[1¯1¯2] mode.
Investigation Of The Catalytic And Structural Roles Of Conserved Histidines Of Human Coproporphyrinogen Oxidase Using Site-Directed Mutagenesis, Shani J. Gitter, Christopher L. Cooper, Jon A. Frieson, Timothy D. Lash, Marjorie A. Jones
Investigation Of The Catalytic And Structural Roles Of Conserved Histidines Of Human Coproporphyrinogen Oxidase Using Site-Directed Mutagenesis, Shani J. Gitter, Christopher L. Cooper, Jon A. Frieson, Timothy D. Lash, Marjorie A. Jones
Faculty Publications – Chemistry
Background: The catalytic contribution of four conserved histidines of human coproporphyrinogen oxidase (CPO) has been investigated using site-directed mutagenesis to change histidine (H) into alanine (A). Material/Methods: The wild-type and mutant enzyme forms were analyzed for their ability to utilize coproporphyrinogen-III, mesoporphvrinogen-VI, and harderoporphyrinogen as substrates. Results: Wild-type CPO had specific activities of 4.9 +/- 0.9 nmole product/min/mg for coproporphyrinogen-III, 1.7 +/- 0.7 nmole ptoduct/min/mg for mesoporphyrinogen-VI, and 5.1 +/- 1.8 nmole product/min/mg for harderoporphyrinogen. The four mutant enzymes were catalytically competent With all three substrates, but to varying degrees. The most affected Mutant was the H158A enzyme which exhibited …