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1992

Physics Faculty Publications

Articles 1 - 22 of 22

Full-Text Articles in Physics

The Structure Of A Complex Of Bovine &-Thrombin And Recombinant Hirudin At 2.8-A Resolution, Jacqueline Vitali, Philip D. Martin, Michael G. Malkowski, William D. Robertson, Jerome B. Lazar, Richard C. Winant, Paul H. Johnson, Brian F.P. Edwards Sep 1992

The Structure Of A Complex Of Bovine &-Thrombin And Recombinant Hirudin At 2.8-A Resolution, Jacqueline Vitali, Philip D. Martin, Michael G. Malkowski, William D. Robertson, Jerome B. Lazar, Richard C. Winant, Paul H. Johnson, Brian F.P. Edwards

Physics Faculty Publications

Crystals of the complex of bovine alpha-thrombin with recombinant hirudin variant 1 have space group C222(1) with cell constants a = 59.11, b = 102.62, and c = 143.26 A. The orientation and position of the thrombin component was determined by molecular replacement and the hirudin molecule was fit in 2 magnitude of Fo - magnitude of Fc electron density maps. The structure was refined by restrained least squares and simulated annealing to R = 0.161 at 2.8-A resolution. The binding of hirudin to thrombin is generally similar to that observed in the crystals of human thrombin-hirudin. Several differences in …

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Shifted X-Ray Photoelectron Peak In Molecular-Beam Epitaxial Gaas Grown At 200 Degrees C, David C. Look, J. T. Grant, J. R. Sizelove Sep 1992

Shifted X-Ray Photoelectron Peak In Molecular-Beam Epitaxial Gaas Grown At 200 Degrees C, David C. Look, J. T. Grant, J. R. Sizelove

Physics Faculty Publications

X‐ray photoelectron spectroscopic results show that molecular beam epitaxial GaAs grown at 200 °C has a reduced effective surface potential energy, about 0.5 eV, compared with the usual 0.7 eV. A Poisson analysis of the data, using parameters from Hall effect and absorption measurements, requires that the Fermi‐level‐controlling defect in this material must have a significantly lower activation energy than that of EL2, an unexpected result.

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Photoquenching Of Hopping Conduction In Low-Temperature-Grown Molecular-Beam-Epitaxial Gaas, Z-Q. Fang, David C. Look Sep 1992

Photoquenching Of Hopping Conduction In Low-Temperature-Grown Molecular-Beam-Epitaxial Gaas, Z-Q. Fang, David C. Look

Physics Faculty Publications

We have observed IR photoquenching of the hopping conduction in GaAs samples grown by molecular beam epitaxy at the low temperature of 250 °C and annealed at temperatures from 300 to 600 °C. A key element in the success of this study is removal of the layers from their substrates. The hopping conduction recovers at about 140 K, with a thermal activation energy of about 0.3 eV.

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Traps In Semi-Insulating Inp Studied By Thermally Stimulated Current Spectroscopy, Z. Q. Fang, David C. Look, J. H. Zhao Aug 1992

Traps In Semi-Insulating Inp Studied By Thermally Stimulated Current Spectroscopy, Z. Q. Fang, David C. Look, J. H. Zhao

Physics Faculty Publications

Traps in Fe‐doped semi‐insulating InP samples have been studied by thermally stimulated current spectroscopy with IR (hν≤1.12 eV) excitation at 81 K. The possible involvement of native defects in determining the compensation mechanisms is suggested based on the observation of other than the usual 0.64 eV Fe‐related activation energy for the dark current in one of the four samples supplied from different sources. A metastable behavior of traps in another sample was found and explained by a charge‐controlled defect reaction model. Three out of the six traps observed are suggested to be electron traps and one among the …

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Defect Models In Electron-Irradiated N-Type Gaas, B. Ziebro, Joseph W. Hemsky, David C. Look Jul 1992

Defect Models In Electron-Irradiated N-Type Gaas, B. Ziebro, Joseph W. Hemsky, David C. Look

Physics Faculty Publications

1 MeV electron irradiation has been performed in degenerate, n‐type (n≂2×1017 cm-3), molecular beam epitaxial GaAs layers, and Hall effect measurements have been carried out during the irradiation in order to get accurate defect production data. The results have been fitted with statistical models, and are most consistent with the usual E1 (EC-0.045 eV) and E2 (EC-0.15 eV) levels being the (-/0) and (0/+) transitions of the As vacancy, respectively. Also, an acceptor well below EC-0.15 eV is produced at a much higher rate than that of E1 and E2.

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Mechanisms For Gaas Surface Passivation By A Molecular-Beam Epitaxial Cap Layer Grown At 200-Degrees-C, David C. Look, D. C. Walters, C. E. Stutz, K. R. Evans, J. R. Sizelove Jun 1992

Mechanisms For Gaas Surface Passivation By A Molecular-Beam Epitaxial Cap Layer Grown At 200-Degrees-C, David C. Look, D. C. Walters, C. E. Stutz, K. R. Evans, J. R. Sizelove

Physics Faculty Publications

A thin, undoped, molecular beam epitaxial (MBE) GaAs cap layer grown on top of an n‐type conductive layer significantly reduces the free‐electron depletion from the latter. By analyzing electron transfer to surface, interface, and bulk acceptor states in the cap, as a function of cap thickness, we show that either (1) the usual EC−0.7 eV surface states are absent, (2) a dense donor near EC−0.4 eV exists or (3) a high donor interface charge (∼5×1012 cm−2) is present. Any of these conclusions constitutes an important new aspect of low‐temperature MBE GaAs.

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Native Donors And Acceptors In Molecular-Beam Epitaxial Gaas Grown At 200 Degrees C, David C. Look, D. C. Walters, M. Mier, C. E. Stutz, S. K. Brierley Jun 1992

Native Donors And Acceptors In Molecular-Beam Epitaxial Gaas Grown At 200 Degrees C, David C. Look, D. C. Walters, M. Mier, C. E. Stutz, S. K. Brierley

Physics Faculty Publications

Absorption measurements at 1.1 and 1.2 μm were used along with the known electron and hole photoionization cross sections for EL2 to determine deep donor (EL2‐like) and acceptor concentrations ND=9.9×1019 and NA=7.9×1018 cm−3, respectively, in a 2‐μm‐thick molecular‐beam epitaxial GaAs layer grown at 200 °C on a 2‐in.‐diam semi‐insulating wafer. Both lateral and depth uniformities of ND over the wafer were excellent as was also the case for the conductivity. Band conduction was negligible compared to hopping conduction at 296 K as evidenced by the lack of a measurable Hall coefficient.

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Direct Measurement Of The Van Der Waals Interaction Between An Atom And Its Images In A Micron-Sized Cavity, V. Sandoghdar, C. I. Sukenik, E. A. Hinds, S. Haroche Jun 1992

Direct Measurement Of The Van Der Waals Interaction Between An Atom And Its Images In A Micron-Sized Cavity, V. Sandoghdar, C. I. Sukenik, E. A. Hinds, S. Haroche

Physics Faculty Publications

The authors have measured by laser spectroscopy the energy of interaction between a sodium atom and its images in the walls of a micron-sized cavity. This cavity-QED study is the first direct quantitative test of the Lennard-Jones van der Waals interaction as a function of controlled atom-surface separation and mean-square electric dipole moment.

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Rayleigh-Brillouin Scattering To Determine One-Dimensional Temperature And Number Density Profiles Of A Gas Flow Field, James A. Lock, Richard G. Seasholtz, W. Trevor John May 1992

Rayleigh-Brillouin Scattering To Determine One-Dimensional Temperature And Number Density Profiles Of A Gas Flow Field, James A. Lock, Richard G. Seasholtz, W. Trevor John

Physics Faculty Publications

Rayleigh-Brillouin spectra for heated nitrogen gas were measured by imaging the output of a Fabry-Perot interferometer onto a CCD array The spectra were compared with the theoretical 6-moment model of Rayleigh-Brillouin scattering convolved with the Fabry-Perot instrument function. Estimates of the temperature and a dimensionless parameter proportional to the number density of the gas as functions of position in the laser beam were calculated by least-squares deviation fits between theory and experiment.

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Incorporation Of Si And Al In Low Temperature Mbe Gaas, M. O. Manasreh, K. R. Evans, C. E. Stutz, David C. Look May 1992

Incorporation Of Si And Al In Low Temperature Mbe Gaas, M. O. Manasreh, K. R. Evans, C. E. Stutz, David C. Look

Physics Faculty Publications

The localized vibrational modes (LVMs) of silicon donor (SiGa) and aluminum isovalent (AlGa) impurities in molecular beam epitaxial GaAs layers grown at various temperatures are studied using the infrared absorption technique. It is found that the total integrated absorption of these impurities LVMs is decreased as the growth temperature decreases. This finding suggests a nonsubstitutional incorporation of Si and Al in GaAs layers grown at 200 °C. On the other hand, a subtitutional incorporation is obtained in GaAs layers grown at temperatures higher than 350 °C. A recovery of the SiGa LVMs in GaAs layers …

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Thermal Conductivity Of Thermoelectric Si0.8‐Ge0.2 Alloys, D. P. White, P. G. Clemens May 1992

Thermal Conductivity Of Thermoelectric Si0.8‐Ge0.2 Alloys, D. P. White, P. G. Clemens

Physics Faculty Publications

The thermal conductivity of heavily doped, n-type Si-Ge alloys has been studied from 300 to 1200 K. The scattering rate of several phonon scattering mechanisms has been calculated, including intrinsic scattering, mass defect and distortion scattering, phonon-electron scattering, and scattering by inclusions. These rates were then used to calculate the lattice thermal conductivity. The electronic component of the thermal conductivity was calculated from the calculated Lorenz ratio and measured values of the electrical conductivity. The total thermal conductivity was then compared to measured values for a specimen studied by Vining et al.

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Incorporation Of Silicon And Aluminum In Low-Temperature Molecular-Beam Epitaxial Gaas, M. O. Manasreh, K. R. Evans, C. E. Stutz, David C. Look, Joseph Hemsky May 1992

Incorporation Of Silicon And Aluminum In Low-Temperature Molecular-Beam Epitaxial Gaas, M. O. Manasreh, K. R. Evans, C. E. Stutz, David C. Look, Joseph Hemsky

Physics Faculty Publications

The localized vibrational modes (LVMs) of silicon donor (SiGa) and aluminum isovalent (AlGa) impurities in molecular beam epitaxial GaAs layers grown at various temperatures are studied using the infrared absorption technique. It is found that the total integrated absorption of these impurities LVMs is decreased as the growth temperature decreases. This finding suggests a nonsubstitutional incorporation of Si and Al in GaAs layers grown at 200 °C. On the other hand, a subtitutional incorporation is obtained in GaAs layers grown at temperatures higher than 350 °C. A recovery of the SiGa LVMs in GaAs layers …

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Assessing The Contributions Of Surface Waves And Complex Rays To Far-Field Mie Scattering By Use Of The Debye Series, Edward A. Hovenac, James A. Lock May 1992

Assessing The Contributions Of Surface Waves And Complex Rays To Far-Field Mie Scattering By Use Of The Debye Series, Edward A. Hovenac, James A. Lock

Physics Faculty Publications

The contributions of complex rays and the secondary radiation shed by surface waves to scattering by a dielectric sphere are calculated in the context of the Debye-series expansion of the Mie scattering amplitudes. Also, the contributions of geometrical rays are reviewed and compared with those of the Debye series. Interference effects among surface waves, complex rays, and geometrical rays are calculated, and the possibility of observing these interference effects is discussed. Experimental data supporting the observation of a surface-wave-geometrical-ray-interference pattern are presented.

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Optical Caustics In Natural Phenomena, James A. Lock, James H. Andrews May 1992

Optical Caustics In Natural Phenomena, James A. Lock, James H. Andrews

Physics Faculty Publications

When observing a distant point source of light through a water droplet adhering to a pane of glass near one's eye or the scattering of light from raindrops, one often sees optical caustics. In this paper, diffraction integrals are used to investigate these caustics. The caustic shapes are related to divergences in the stationary phase method for approximating the diffraction integrals. These divergences correspond to the coalescing of two or more geometrical light rays in ray optics or the coalescing of two or more regions of stationary phase in wave optics. The number of coalescing light rays is related to …

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Dephasing Processes In Glasses With Strong Strain Interactions, Ulrich Zürcher, R. Silbey May 1992

Dephasing Processes In Glasses With Strong Strain Interactions, Ulrich Zürcher, R. Silbey

Physics Faculty Publications

Spectral diffusion decay is calculated for a glass modeled by two level systems which are strongly coupled to phonons. The spin-phonon interaction induces an effective spin-spin interaction which dominates the energy scale. We show that spectral diffusion is a property of macroscopic local fields which fluctuate on time scales that are much longer than the spin-phonon relaxation time T1. We assume for the spectral diffusion a Gaussian distribution and derive a self-consistent equation for its variance which is nonlocal in time. At high temperatures, the variance grows linearly with time while at low temperatures, we find strong deviations from simple …

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Scaling Dynamics Of Aerosol Coagulation, B. J. Olivier, C. M. Sorensen, Thomas W. Taylor Apr 1992

Scaling Dynamics Of Aerosol Coagulation, B. J. Olivier, C. M. Sorensen, Thomas W. Taylor

Physics Faculty Publications

A combination of static and quasielastic light scattering and the theory of scaling solutions to Smoluchowski's equation was used to determine the absolute coagulation rate K'0 and kernel homogeneity lambda of a coagulating liquid-drop aerosol. Droplet sizes ranged from 0.23 to 0.42-mu-m, implying Knudsen numbers in the range 0.26 and 0.14. The temporal evolution of the number concentration M0 and the modal radius r(M) of an assumed zeroth-order log-normal distribution showed near-power-law behavior similar to that predicted by the scaling theory. From the temporal scaling behavior of M0(t) and r(M)(t), the absolute coagulation rate was calculated. The coagulation rates from …

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Electron-Paramagnetic-Resonance Study Of Gaas Grown By Low-Temperature Molecular-Beam Epitaxy, H. J. Vonbardeleben, M. O. Manasreh, David C. Look, K. R. Evans, C. E. Stutz Feb 1992

Electron-Paramagnetic-Resonance Study Of Gaas Grown By Low-Temperature Molecular-Beam Epitaxy, H. J. Vonbardeleben, M. O. Manasreh, David C. Look, K. R. Evans, C. E. Stutz

Physics Faculty Publications

Electron-paramagnetic-resonance results demonstrate an arsenic-antisite related deep donor defect to be the dominant native defect in GaAs layers grown by low-temperature molecular-beam epitaxy (LTMBE). This defect is different from the EL2-related native arsenic-antisite defect. The thermal-equilibrium concentration of 3×1018 cm−3 ionized AsGa defects directly shows the additional presence of unidentified acceptor defects in the same concentration range. The defect distribution in GaAs grown by LTMBE is unstable under thermal annealing at T≳500 °C.

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Spatial Correlation Between Ch, Cn And The Diffuse Interstellar Band Carriers, J Krelowski, T P. Snow, C G. Seab, J Papaj Jan 1992

Spatial Correlation Between Ch, Cn And The Diffuse Interstellar Band Carriers, J Krelowski, T P. Snow, C G. Seab, J Papaj

Physics Faculty Publications

Observations are presented of the diffuse interstellar bands at 5780 and 5797 A and of the ultraviolet lines of CH and CN in the light of six bright stars which lie behind isolated interstellar clouds. It is found that CN and CH are only present when the 5797 band is deeper than the 5780 one. Comparisons with satellite measurements of the UV extinction show that the shape of the extinction curve is linked to the same band ratio in these stars. The results support a previous suggestion that the various components of the absorption spectrum of an isolated cloud (the …

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Densities And Vibrational Distribution Of H3+ In The Jovian Auroral Ionosphere, Y. H. Kim, Jane L. Fox, H. S. Porter Jan 1992

Densities And Vibrational Distribution Of H3+ In The Jovian Auroral Ionosphere, Y. H. Kim, Jane L. Fox, H. S. Porter

Physics Faculty Publications

Observations of the H3+ infrared emission at 2 and 4 μm have suggested that H3+ is in local thermodynamic equilibrium (LTE) in the region of the Jovian ionosphere from which the emissions originate. We have tested this assumption by calculating the vibrational distribution of H3+ over the altitude range of 350 to 1500 km above the methane cloud tops (1 to 4 × 10−3 μbar). We have constructed a model of the Jovian auroral ionosphere in which the neutral temperatures are enhanced over those of the mid-latitude ionosphere, as suggested by observations and …

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Alloy Scattering In P-Type Alxga1-Xas, David C. Look, D. K. Lorance, J. R. Sizelove, C. E. Stutz, K. R. Evans, D. W. Whitson Jan 1992

Alloy Scattering In P-Type Alxga1-Xas, David C. Look, D. K. Lorance, J. R. Sizelove, C. E. Stutz, K. R. Evans, D. W. Whitson

Physics Faculty Publications

The hole mobility of Be‐doped ( ~ 2 × 1017 cm-3) AlxGa1-xAs, for x=0–1, is analyzed both theoretically and experimentally. Alloy scattering is very important, and in fact reduces the hole mobility from 150 to less than 90 cm2/V s at x=0.5. The main parameter in the alloy scattering formulation, the alloy potential Eal, is found to be about 0.5 eV for p‐type AlxGa1-xAs.

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Energetic Protons And Deuterons Emitted Following Μ⁻ Capture By ³He Nuclei, W. J. Cummings, G. E. Dodge, S. S. Hanna, B. H. King, S. E. Kuhn, Y. M. Shin, R. Helmer, R. B. Schubank, N. R. Stevenson, U. Wienands, Y. K. Lee, G. R. Mason, B. E. King, K. S. Chung, J. M. Lee, D. P. Rosenzweig Jan 1992

Energetic Protons And Deuterons Emitted Following Μ⁻ Capture By ³He Nuclei, W. J. Cummings, G. E. Dodge, S. S. Hanna, B. H. King, S. E. Kuhn, Y. M. Shin, R. Helmer, R. B. Schubank, N. R. Stevenson, U. Wienands, Y. K. Lee, G. R. Mason, B. E. King, K. S. Chung, J. M. Lee, D. P. Rosenzweig

Physics Faculty Publications

Spectra of energetic protons and deuterons emitted following negative muon capture from rest in 3He have been measured for the first time. Significant capture strength is observed at high energy transfers (mμ- Ev >60 MeV) for the two-body and three-body breakup channels, indicative of the importance of nucleon-nucleon correlations and meson exchange currents in the capture process. A simple plane wave impulse approximation calculation reproduces the proton spectrum reasonably well, but underpredicts the deuteron rate at the highest energies by a large factor.

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Density Effect In Cu K-Shell Ionization By 5.1-Gev Electrons, W. E. Meyerhof, D. G. Jensen, D. M. Kawall, S. E. Kuhn, D. W. Spooner, Z. E. Meziani, D.. N. Faust Jan 1992

Density Effect In Cu K-Shell Ionization By 5.1-Gev Electrons, W. E. Meyerhof, D. G. Jensen, D. M. Kawall, S. E. Kuhn, D. W. Spooner, Z. E. Meziani, D.. N. Faust

Physics Faculty Publications

We have made an absolute measurement of the Cu K-shell impact ionization cross section by 5.1-GeV electrons, which demonstrates directly a density effect predicted by Fermi in 1940. By determining the ratio of the K x-ray yield from a thin front and back layer of the target by a novel grazing emission method, we have verified the effect of transition radiation on the x-ray production, suggested by Sorensen and reported by Bak et al.

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