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Measurement Of The H- Photodetachment Cross Section In The Continuum Region From 1.5 To 10.5 Ev, Mohammad Hassan Sharifian-Attar Nov 1977

Measurement Of The H- Photodetachment Cross Section In The Continuum Region From 1.5 To 10.5 Ev, Mohammad Hassan Sharifian-Attar

Physics & Astronomy ETDs

We have measured the H photodetachment cross section in the photon energy range from 1.5 to 10.5 eV, using a colliding beam method. The H beam with an energy of 800 MeV, at Los Alamos Linear Accelerator, was intersected by a nitrogen laser beam with a photon energy of 3 .678 eV in the lab frame. We changed the energy of the pho"ton in the H rest frame, through the Doppler effect, by varying the angle between the laser and the H beams. The magnitude of the Doppler shift was enough to cover the entire range from 1.5 to 10.5 …

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Analysis Of Chert By Particle Induced X-Ray Emission, Jeanette E. Gibeson Aug 1977

Analysis Of Chert By Particle Induced X-Ray Emission, Jeanette E. Gibeson

Masters Theses

No abstract provided.

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Method Of Variational Secular Equation For The Ground State Of Helium Atom, Mih-Seh Kong Aug 1977

Method Of Variational Secular Equation For The Ground State Of Helium Atom, Mih-Seh Kong

Masters Theses

No abstract provided.

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Heights Of Formation For Certain Solar Spectral Lines, Erik J. Schwendeman Jul 1977

Heights Of Formation For Certain Solar Spectral Lines, Erik J. Schwendeman

Physics & Astronomy ETDs

Heights of formation are calculated for several of the solar spectral lines studied by the National Aeronautics and Space Administration - Goddard Space Flight Center (NASA-GSFC) New Mexico Solar Station at Sacramento Peak Observatory. These lines are Ca II H, K, 8498 Å and 8542 Å, MgI b₁, NaI D₁ and D₂ and Sil 4103 Å. I calculate the heights of formation for each of these lines along with upper and lower confidence limits representing the height region where 90% of the total intensity of the line is formed in the solar photosphere and chromosphere. The …

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Plasma Sheath Analysis By Computer Simulation, Leo J. Rahal May 1977

Plasma Sheath Analysis By Computer Simulation, Leo J. Rahal

Physics & Astronomy ETDs

The time development of a fully ionized, dense two-component plasma is investigated through the use of a one-dimensional particle simulation code. The plasma is initially composed of two distinct regions. One region is a uniform plasma in which electrons and ions are at the sane temperature and have no electric fields due to charge separation. The other region contains a charge separation of electrons and ions resulting in an electric field. There also exists an electron current which produces a confining magnetic field. This is the sheath region between the neutral plasma and the confining magnetic field. The simulation occurs …

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Infrared Observations Of Hii Regions And Comet West, Paul A. Heckert May 1977

Infrared Observations Of Hii Regions And Comet West, Paul A. Heckert

Physics & Astronomy ETDs

In Chapter 1, I outline the methods of making ground-based infrared observations. I concentrate on the observational procedures rather than the instrumental design. Near-infrared observations of S 156A, _S 158A, S 159A, S 162A₁, S 228, and G 45. 5 + 0 .1 (#2) made with a beam size of ̴1 are used to estimate the total near infrared flux. After correcting for the line of sight extinction the near infrared luminosities are greater than the Lyman-α luminosities inferred from radio observations. A strong double peaked infrared source was discovered near the region of G 25.3-0.1. The infrared …

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The Effects Of Electron Irradiation On Mosfets, Mark D. Skeldon May 1977

The Effects Of Electron Irradiation On Mosfets, Mark D. Skeldon

Physics Theses & Dissertations

The characteristics of n and p-channel MOSFETs have been investigated while irradiated with electron radiation from Strontium 9Ø. The drain current vs. gate voltage of the p-channel MOSFET and the threshold voltage changes in n and p-channel MOSFETs have been studied with and without aluminum shielding. The switching characteristics and threshold voltage changes of COS/MOS dual input NAND gates have been investigated while exposed to electron radiation. Various methods of annealing the radiation damage to these devices is discussed.

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Theory Of Amorphous Copper-Nickel Alloys, Kun-San Chang Jan 1977