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Full-Text Articles in Physics
Spontaneously Generated Inhomogeneous Phases Via Holography, Kübra Yeter Aydeniz
Spontaneously Generated Inhomogeneous Phases Via Holography, Kübra Yeter Aydeniz
Doctoral Dissertations
We discuss a holographic model consisting of a U(1) gauge field and a scalar field coupled to a charged AdS (anti-de Sitter) black hole under a spatially homogeneous chemical potential. By turning on a higher-derivative interaction term between the U(1) gauge field and the scalar field, a spatially dependent profile of the scalar field is generated spontaneously. We calculate the critical temperature at which the transition to the inhomogeneous phase occurs for various values of the parameters of the system. We solve the equations of motion below the critical temperature, and show that the dual gauge theory on the boundary …
Digitally Manufactured Spatially Variant Photonic Crystals, Javier Jair Pazos
Digitally Manufactured Spatially Variant Photonic Crystals, Javier Jair Pazos
Open Access Theses & Dissertations
Metamaterials and photonic crystals are engineered composites that exhibit electromagnetic properties superior to those found in nature. They have been shown to produce novel and useful phenomena that allow extraordinary control over the electromagnetic field. One of these phenomena is self-collimation, an effect observed in photonic crystals in which a beam of light propagates without diffraction and is forced to flow in the direction of the crystal. Self-collimation however, like many of the mechanisms enabled through dispersion engineering, is effective in directions only along the principal axes of the lattice. To this effect, a general purpose synThesis procedure was developed …
Structural, Optical And Electrical Properties Of Yttrium-Doped Hafnium Oxide Nanocrystalline Thin Films, Abhilash Kongu
Structural, Optical And Electrical Properties Of Yttrium-Doped Hafnium Oxide Nanocrystalline Thin Films, Abhilash Kongu
Open Access Theses & Dissertations
Hafnium oxide (HfO2) has emerged as the most promising high-k dielectric for Metal-Oxide-Semiconductor (MOS) devices and has been highlighted as the most suitable dielectric materials to replace silicon oxide because of its comprehensive performance. In the present research, yttrium-doped HfO2 (YDH) thin films were fabricated using RF magnetron sputter deposition onto Si (100) and quartz with a variable thickness. Cross-sectional scanning electron microscopy coupled with Filmetrics revealed that film thickness values range from 700 A° to 7500 A°. Electrical properties such as AC Resistivity and current-voltage (I-V) characteristics of YDH films were studied. YDH films that were relatively thin (<1500 A°) crystallized in monoclinic phase while thicker films crystallized in cubic phase. The band gap (Eg) of the films was calculated from the optical measurements. The band gap was found to be ∼5.60 eV for monoclinic while it is ∼6.05 eV for cubic phase of YDH films. Frequency dependence of the electrical resistivity (ρac) and the total conductivity of the films were measured. Resistivity decreased (by three orders of magnitude) with increasing frequency from 100 Hz to 1 MHz, attributed due to the hopping mechanism in YDH films. Whereas, while ρac∼1Ω-m at low frequencies (100 Hz), it decreased to ∼ 104 Ω-cm at higher frequencies (1 MHz). Aluminum (Al) metal electrodes were deposited to fabricate a thin film capacitor with YDH layer as dielectric film thereby employing Al-YDH-Si capacitor structure. The results indicate that the capacitance of the films decrease with increasing film thickness. A detailed analysis of the electrical characteristics of YDH films is presented.
Optical Properties Of In1-Xgaxn Epilayers Grown By Hpcvd, Jielei Wang Ms
Optical Properties Of In1-Xgaxn Epilayers Grown By Hpcvd, Jielei Wang Ms
Physics and Astronomy Theses
Optical absorption spectroscopy has been applied to study properties such as the fundamental absorption edge and defect absorption centers of group III-nitride compound semiconductor epilayers. The investigation in this thesis focused on analyzing the band gap of indium-rich In1-xGaxN epilayers, which where grown by the high-pressure chemical vapor deposition (HPCVD) technique. Our results - together with literature data for gallium-rich In1-xGaxN alloys indicate that the shift of the fundamental band gap of In1-xGaxN with composition x can be described with a bowing parameter of b = 2.2eV. Temperature dependent transmission measurements show that the band gap variation with temperature follows …