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Full-Text Articles in Physics
Enhancing The Visibility Of Vernier Effect In A Tri-Microfiber Coupler Fiber Loop Interferometer For Ultrasensitive Refractive Index And Temperature Sensing, Fangfang Wei, Dejun Liu, Zhe Wang, Zhuochen Wang, Gerald Farrell, Qiang Wu, Gang-Ding Peng, Yuliya Semenova
Enhancing The Visibility Of Vernier Effect In A Tri-Microfiber Coupler Fiber Loop Interferometer For Ultrasensitive Refractive Index And Temperature Sensing, Fangfang Wei, Dejun Liu, Zhe Wang, Zhuochen Wang, Gerald Farrell, Qiang Wu, Gang-Ding Peng, Yuliya Semenova
Articles
In this paper a Vernier effect based sensor is analyzed and demonstrated experimentally in a tri-microfiber coupler (Tri-MFC) and polarization-maintaining fiber (PMF) loop interferometer (Tri-MFC-PMF) to provide ultrasensitive refractive index and temperature sensing. The main novelty of this work is an analysis of parameters of the proposed Tri-MFC-PMF with the objective of determining the conditions leading to a strong Vernier effect. It has been identified by simulation that the Vernier effect is a primary factor in the design of Tri-MFC-PMF loop sensing structure for sensitivity enhancement. It is furthermore demonstrated experimentally that enhancing the visibility of the Vernier spectrum in …
Simulation Study Of Hemt Structures With Hfo2 Cap Layer For Mitigating Inverse Piezoelectric Effect Related Device Failures, Deepthi Nagulapally, Ravi P. Joshi, Aswini Pradhan
Simulation Study Of Hemt Structures With Hfo2 Cap Layer For Mitigating Inverse Piezoelectric Effect Related Device Failures, Deepthi Nagulapally, Ravi P. Joshi, Aswini Pradhan
Electrical & Computer Engineering Faculty Publications
The Inverse Piezoelectric Effect (IPE) is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs). Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO2 "cap layer" above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using "field plates" in concert with high-k oxides