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Full-Text Articles in Physics

Measurement Of Magnetic Fluctuations By O-X Mode Conversion, L. L. Vahala, G. Vahala, N. Bretz Jan 1990

Measurement Of Magnetic Fluctuations By O-X Mode Conversion, L. L. Vahala, G. Vahala, N. Bretz

Electrical & Computer Engineering Faculty Publications

The possibility of measuring magnetic fluctuations in a fusion plasma is considered by examining the O→X mode conversion. Under certain conditions and with good angular resolution, this mode conversion can be attributed to the presence of magnetic fluctuations even though the level of these fluctuations is much lower than that of density fluctuations. Some nonideal effects such as mode polarization mismatch at the plasma edge are also discussed.


Application Of The Results Of Carbon Pellet Modeling To The Problem Of Plasma Penetration, L. L. Vahala, A. G. El Cashlan, G. A. Gerdin, P. B. Parks Jan 1990

Application Of The Results Of Carbon Pellet Modeling To The Problem Of Plasma Penetration, L. L. Vahala, A. G. El Cashlan, G. A. Gerdin, P. B. Parks

Electrical & Computer Engineering Faculty Publications

The assumptions of the evaporation model for low-Z pellets interacting with magnetic fusion plasmas developed by Parks are tested. These assumptions are that the vapor density profile in the region adjacent to the pellet surface falls off with radial distance as r, where 5 <α<6, and that the ionization time for the transition between charge states זf (i.e., for r < ~3 sonic radii). The first assumption is tested by solving a two-parameter eigenvalue problem for the evaporation cloud in the region interior to the sonic radius; the results are found to be consistent with the low-Z evaporation model. The second assumption, that זzi «זf, is tested at the sonic radius using the results from atomic physics and the low-Z evaporation model. It is found that indeed זzi «זf for plasmas with parameters close to thermonuclear conditions (e.g. CIT), but not for those of smaller Tokamaks such as …


Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola Jan 1990

Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola

Electrical & Computer Engineering Faculty Publications

The influence of the copper concentration in silicon-doped gallium arsenide on the photoionization and photoquenching of charge carriers was studied both experimentally and theoretically. The studies indicate that the compensation ratio (NCu/NSi) is an important parameter for the GaAs:Si:Cu switch systems with regard to the turn-on and turn-off performance. The optimum copper concentration for the use of GaAs:Si:Cu as an optically controlled closing and opening switch is determined.