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Full-Text Articles in Physics
Synthesis Of Metastable Ruddlesden–Popper Titanates, (ATio3)NAO, With N ≥ 20 By Molecular-Beam Epitaxy, Matthew R. Barone, Myoungho Jeong, Nicholas Parker, Jiaxin Sun, Dmitri A. Tenne, Kiyoung Lee, Darrell G. Schlom
Synthesis Of Metastable Ruddlesden–Popper Titanates, (ATio3)NAO, With N ≥ 20 By Molecular-Beam Epitaxy, Matthew R. Barone, Myoungho Jeong, Nicholas Parker, Jiaxin Sun, Dmitri A. Tenne, Kiyoung Lee, Darrell G. Schlom
Physics Faculty Publications and Presentations
We outline a method to synthesize (ATiO3)nAO Ruddlesden–Popper phases with high-n, where the A-site is a mixture of barium and strontium, by molecular-beam epitaxy. The precision and consistency of the method described is demonstrated by the growth of an unprecedented (SrTiO3)50SrO epitaxial film. We proceed to investigate barium incorporation into the Ruddlesden–Popper structure, which is limited to a few percent in bulk, and we find that the amount of barium that can be incorporated depends on both the substrate temperature and the strain state of the …
Strain-Driven Quantum Dot Self-Assembly By Molecular Beam Epitaxy, Kathryn E. Sautter, Kevin D. Vallejo, Paul J. Simmonds
Strain-Driven Quantum Dot Self-Assembly By Molecular Beam Epitaxy, Kathryn E. Sautter, Kevin D. Vallejo, Paul J. Simmonds
Physics Faculty Publications and Presentations
Research into self-assembled semiconductor quantum dots (QDs) has helped advance numerous optoelectronic applications, ranging from solid-state lighting to photodetectors. By carefully controlling molecular beam epitaxy (MBE) growth parameters, we can readily tune QD light absorption and emission properties to access a broad portion of the electromagnetic spectrum. Although this field is now sufficiently mature that QDs are found in consumer electronics, research efforts continue to expand into new areas. By manipulating MBE growth conditions and exploring new combinations of materials, substrate orientations, and the sign of strain, a wealth of opportunities exist for synthesizing novel QD nanostructures with hitherto unavailable …
Review Article: Molecular Beam Epitaxy Of Lattice-Matched Inalas And Ingaas Layers On Inp (111)A, (111)B, And (110), Christopher D. Yerino, Baolai Liang, Diana L. Huffaker, Paul J. Simmonds, Minjoo Larry Lee
Review Article: Molecular Beam Epitaxy Of Lattice-Matched Inalas And Ingaas Layers On Inp (111)A, (111)B, And (110), Christopher D. Yerino, Baolai Liang, Diana L. Huffaker, Paul J. Simmonds, Minjoo Larry Lee
Physics Faculty Publications and Presentations
For more than 50 years, research into III–V compound semiconductors has focused almost exclusively on materials grown on (001)-oriented substrates. In part, this is due to the relative ease with which III–Vs can be grown on (001) surfaces. However, in recent years, a number of key technologies have emerged that could be realized, or vastly improved, by the ability to also grow high-quality III–Vs on (111)- or (110)-oriented substrates These applications include: next-generation field-effect transistors, novel quantum dots, entangled photon emitters, spintronics, topological insulators, and transition metal dichalcogenides. The first purpose of this paper is to present a comprehensive review …
Selective-Area Growth Of Heavily N–Doped Gaas Nanostubs On Si(001) By Molecular Beam Epitaxy, Yoon Jung Chang, Paul J. Simmonds, Brett Beekley, Mark S. Goorsky, Jason C.S. Woo
Selective-Area Growth Of Heavily N–Doped Gaas Nanostubs On Si(001) By Molecular Beam Epitaxy, Yoon Jung Chang, Paul J. Simmonds, Brett Beekley, Mark S. Goorsky, Jason C.S. Woo
Physics Faculty Publications and Presentations
Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO2 mask act as a template for GaAs-on-Si selective-area growth(SAG) of nanostubs 120 nm tall and ≤100 nm in diameter. We investigate the influence of growthparameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAsgrowth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of the selectively grownGaAs …
Gasb Thermophotovoltaic Cells Grown On Gaas By Molecular Beam Epitaxy Using Interfacial Misfit Arrays, Bor-Chau Juang, Ramesh B. Laghumavarapu, Brandon J. Foggo, Paul J. Simmonds, Andrew Lin, Baolai Liang, Diana L. Huffaker
Gasb Thermophotovoltaic Cells Grown On Gaas By Molecular Beam Epitaxy Using Interfacial Misfit Arrays, Bor-Chau Juang, Ramesh B. Laghumavarapu, Brandon J. Foggo, Paul J. Simmonds, Andrew Lin, Baolai Liang, Diana L. Huffaker
Physics Faculty Publications and Presentations
There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm2. In addition, the …
Strain-Driven Growth Of Gaas(111) Quantum Dots With Low Fine Structure Splitting, Paul J. Simmonds
Strain-Driven Growth Of Gaas(111) Quantum Dots With Low Fine Structure Splitting, Paul J. Simmonds
Physics Faculty Publications and Presentations
Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting(FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with …
Adsorption-Controlled Growth Of Bivo4 By Molecular-Beam Epitaxy, D. A. Hillsberry, D. A. Tenne
Adsorption-Controlled Growth Of Bivo4 By Molecular-Beam Epitaxy, D. A. Hillsberry, D. A. Tenne
Physics Faculty Publications and Presentations
Single-phase epitaxial films of the monoclinic polymorph of BiVO4 were synthesized by reactive molecular-beam epitaxy under adsorption-controlled conditions. The BiVO4 films were grown on (001) yttria-stabilized cubic zirconia (YSZ) substrates. Four-circle x-ray diffraction, scanning transmission electron microscopy (STEM), and Raman spectroscopy confirm the epitaxial growth of monoclinic BiVO4 with an atomically abrupt interface and orientation relationship (001)BiVO4 ∥ (001)YSZ with [100]BiVO4 ∥ [100]YSZ. Spectroscopic ellipsometry, STEM electron energy loss spectroscopy (STEM-EELS), and x-ray absorption spectroscopy indicate that the films have a direct band gap of 2.5 ± 0.1 eV.