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Ab Initio Calculations And Ellipsometry Measurements Of The Optical Properties Of The Layered Semiconductor In4Se3, L. Makinistian, E. A. Albanesi, N. V. Gonzalez Lemus, A. G. Petukhov, D. Schmidt, Eva Schubert, M. Schubert, Yaroslav B. Losovyj, P. Galiy, Peter A. Dowben
Ab Initio Calculations And Ellipsometry Measurements Of The Optical Properties Of The Layered Semiconductor In4Se3, L. Makinistian, E. A. Albanesi, N. V. Gonzalez Lemus, A. G. Petukhov, D. Schmidt, Eva Schubert, M. Schubert, Yaroslav B. Losovyj, P. Galiy, Peter A. Dowben
Peter Dowben Publications
In this work, we present a thorough study of the optical properties of the layered orthorhombic compound In4Se3. The dielectric function—real and imaginary parts, the complex refraction index, the reflectivity, the absorption coefficient, and the conductivity of In4Se3 were calculated with the inclusion of the spin-orbit interaction, using an ab initio FP-LAPW method based on DFT. Also, generalized ellipsometry was employed for more precise measurement of the anisotropic dielectric functions for polarization along crystal a, b, and c axes of orthorhombic absorbing In4Se3 single crystals cut approximately parallel to …
The Electron–Phonon Coupling At The Mo(112) Surface, Ning Wu, Keisuke Fukutani, Peter A. Dowben
The Electron–Phonon Coupling At The Mo(112) Surface, Ning Wu, Keisuke Fukutani, Peter A. Dowben
Peter Dowben Publications
We investigated the electron–phonon coupling (EPC), in the vicinity of the Fermi level, for the surface-weighted states of Mo(112) from high resolution angle-resolved photoemission data taken parallel to the surface corrugation (i.e. (111)). The surface-weighted bandwidth may be discussed in terms of electron–electron interactions, electron impurity scattering and electron–phonon coupling and exhibits a mass enhancement factor λ = 0.42, within the Debye model, determined from the experimentally derived self-energy. Gold overlayers suppress the mass enhancement of the Mo(112) surface-weighted band crossing the Fermi level at 0.54 Å-1.
The Local Structure Of Transition Metal Doped Semiconducting Boron Carbides, Jing Liu, Guangfu Luo, Wai-Ning Mei, Orhan Kizilkaya, Eric D. Shepherd, Jennifer I. Brand, Peter A. Dowben
The Local Structure Of Transition Metal Doped Semiconducting Boron Carbides, Jing Liu, Guangfu Luo, Wai-Ning Mei, Orhan Kizilkaya, Eric D. Shepherd, Jennifer I. Brand, Peter A. Dowben
Peter Dowben Publications
Transition metal doped boron carbides produced by plasma enhanced chemical vapour deposition of orthocarborane (closo-1,2-C2B10H12) and 3d metal metallocenes were investigated by performing K-edge extended x-ray absorption fine structure and x-ray absorption near edge structure measurements. The 3d transition metal atom occupies one of the icosahedral boron or carbon atomic sites within the icosahedral cage. Good agreement was obtained between experiment and models for Mn, Fe and Co doping, based on the model structures of two adjoined vertex sharing carborane cages, each containing a transition metal. The local spin configurations of all …