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Wright State University

MOLECULAR BEAM EPITAXY

Publication Year

Articles 1 - 3 of 3

Full-Text Articles in Physics

Optical Properties Of Gan Grown On Zno By Reactive Molecular Beam Epitaxy, F. Hamdani, A. Botchkarev, W. Kim, H. Morkoç, M. Yeadon, J. M. Gibson, S.-C. Y. Tsen, David J. Smith, Donald C. Reynolds, David C. Look, K. R. Evans, Cole W. Litton, William C. Mitchel, P. Hemenger Jan 1997

Optical Properties Of Gan Grown On Zno By Reactive Molecular Beam Epitaxy, F. Hamdani, A. Botchkarev, W. Kim, H. Morkoç, M. Yeadon, J. M. Gibson, S.-C. Y. Tsen, David J. Smith, Donald C. Reynolds, David C. Look, K. R. Evans, Cole W. Litton, William C. Mitchel, P. Hemenger

Physics Faculty Publications

High quality wurtzite GaN epilayers have been grown on ZnO(0001) substrates by reactive molecular beam epitaxy. Photoluminescence and reflectivity measurements point to high quality presumably due to the near match of both the crystal lattice parameter and the stacking order between GaN and ZnO. In addition, the good films lack the characteristic yellow photoluminescence band. Any misorientation of the GaN epilayer planes with respect to the ZnO substrate is not detectable with polarized reflectivity. The x-ray double crystal diffraction measurements indicate this misorientation is much smaller than those for GaN epilayers on SiC and Al2O3 . © 1997 ...


Deep Traps In Molecular-Beam-Epitaxial Gaas Grown At Low Temperatures, David C. Look, Z-Q. Fang, H. Yamamoto, J. R. Sizelove, M. G. Mier, C. E. Stutz Jul 1994

Deep Traps In Molecular-Beam-Epitaxial Gaas Grown At Low Temperatures, David C. Look, Z-Q. Fang, H. Yamamoto, J. R. Sizelove, M. G. Mier, C. E. Stutz

Physics Faculty Publications

Deep‐level transient spectroscopy has been performed on Si‐doped GaAs layers grown by molecular‐beam epitaxy at substrate temperatures of 400–450 °C. The λ effect is taken into account and overlapping peaks are analyzed numerically. An 0.65 eV electron trap of concentration 2×1016 cm−3 is believed to be related to the AsGa‐associated 0.65 eV Hall‐effect center, and also to the trap EB4 found in electron‐irradiated GaAs.


Incorporation Of Si And Al In Low Temperature Mbe Gaas, M. O. Manasreh, K. R. Evans, C. E. Stutz, David C. Look May 1992

Incorporation Of Si And Al In Low Temperature Mbe Gaas, M. O. Manasreh, K. R. Evans, C. E. Stutz, David C. Look

Physics Faculty Publications

The localized vibrational modes (LVMs) of silicon donor (SiGa) and aluminum isovalent (AlGa) impurities in molecular beam epitaxial GaAs layers grown at various temperatures are studied using the infrared absorption technique. It is found that the total integrated absorption of these impurities LVMs is decreased as the growth temperature decreases. This finding suggests a nonsubstitutional incorporation of Si and Al in GaAs layers grown at 200 °C. On the other hand, a subtitutional incorporation is obtained in GaAs layers grown at temperatures higher than 350 °C. A recovery of the SiGa LVMs in GaAs layers grown at ...