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Full-Text Articles in Physics
Metal Contacts On Bulk Zno Crystal Treated With Remote Oxygen Plasma, Z-Q. Fang, B. Claflin, David C. Look, Y. F. Dong, L. Brillson
Metal Contacts On Bulk Zno Crystal Treated With Remote Oxygen Plasma, Z-Q. Fang, B. Claflin, David C. Look, Y. F. Dong, L. Brillson
Physics Faculty Publications
To study the quality of thin metal/ZnO Schottky contacts (SCs), temperature-dependent current-voltage (I-V), capacitance-voltage, deep level transient spectroscopy, and photoluminescence measurements were performed using bulk, vapor-phase ZnO, treated by remote oxygen plasma (ROP). Au/ZnO and Pd/ZnO contacts on both O and Zn faces are compared as a function of the ROP processing sequence and duration. We find that (i) as the duration of ROP treatment increases from 2 to 4 h, Au/ZnO contacts on the Zn face, deposited before ROP treatment, become rectifying, while those on the O face remain Ohmic; (ii) with long-term ROP …
Uv Light-Induced Changes To The Surface Conduction In Hydrothermal Zno, B. Claflin, David C. Look
Uv Light-Induced Changes To The Surface Conduction In Hydrothermal Zno, B. Claflin, David C. Look
Physics Faculty Publications
High quality, bulk ZnO crystals grown by Tokyo Denpa using the hydrothermal process typically exhibit a room temperature carrier concentration in the 1013–1014 cm−3 range and a low mobility, conductive surface layer, observed at low temperature, with a sheet concentration on the order of 1012–1013 cm−2. In the sample discussed here, bulk conduction is controlled by two donor levels at 50 and 400 meV with concentrations of 1.2×1016 and 1.5×1016 cm−3, respectively. Temperature-dependent photo-Hall-effect measurements, using blue/UV light, in vacuum show an increase in the surface sheet …
In-Implanted Zno: Controlled Degenerate Surface Layer, David C. Look, Gary C. Farlow, F. Yaqoob, L. H. Vanamurthy, M. Huang
In-Implanted Zno: Controlled Degenerate Surface Layer, David C. Look, Gary C. Farlow, F. Yaqoob, L. H. Vanamurthy, M. Huang
Physics Faculty Publications
In was implanted into bulk ZnO creating a square profile with a thickness of about 100 nm and an In concentration of about 1×1020 cm-3. The layer was analyzed with Rutherford backscattering, temperature-dependent Hall effect, and low-temperature photoluminescence measurements. The implantation created a nearly degenerate carrier concentration n of about 2×1019 cm-3, but with a very low mobility μ, increasing from about 0.06 cm2/V s at 20 K to about 2 cm2/V s at 300 K. However, after annealing at 600 °C for 30 min, n increased to about 5×10 …
Ga-Related Photoluminescence Lines In Ga-Doped Zno Grown By Plasma-Assisted Molecular-Beam Epitaxy, Z. Yang, David C. Look, J. L. Liu
Ga-Related Photoluminescence Lines In Ga-Doped Zno Grown By Plasma-Assisted Molecular-Beam Epitaxy, Z. Yang, David C. Look, J. L. Liu
Physics Faculty Publications
Low-temperature photoluminescence (PL) and temperature-dependent Hall-effect (T-Hall) measurements were carried out in undoped and Ga-doped ZnO thin films grown by molecular-beam epitaxy. As the carrier concentration increases from 1.8×1018 to 1.8×1020 cm−3, the dominant PL line at 9 K changes from I1 (3.368–3.371 eV) to IDA (3.317–3.321 eV), and finally to I8 (3.359 eV). The dominance of I1, due to ionized-donor bound excitons, is unexpected in n-type samples but is shown to be consistent with the T-Hall results. We also show that IDA has characteristics of …
Ga-Doped Zno Films Grown On Gan Templates By Plasma-Assisted Molecular-Beam Epitaxy, H. J. Ko, Yanfang Chen, S. K. Hong, H. Wenisch, T. Yao, David C. Look
Ga-Doped Zno Films Grown On Gan Templates By Plasma-Assisted Molecular-Beam Epitaxy, H. J. Ko, Yanfang Chen, S. K. Hong, H. Wenisch, T. Yao, David C. Look
Physics Faculty Publications
We have investigated the structural and optical properties of Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy. The carrier concentration in Ga-doped ZnO films can be controlled from 1.33×1018/cm3 to 1.13×1020/cm3. Despite high Ga incorporation, the linewidth of (0002) ω-rocking curves of Ga-doped ZnO films still lies in the range from 5 to 15 arc min. Photoluminescence (PL) spectra of Ga-doped ZnO films show dominant near-bandedge emission with negligibly weak deep-level emission, independent of carrier concentration. The PL spectrum exhibits a new emission line at 3.358 eV, which corresponds to …