Open Access. Powered by Scholars. Published by Universities.®
- Discipline
- Institution
- Publication Year
Articles 1 - 19 of 19
Full-Text Articles in Physics
Electron Traps In Ag-Doped Li2B4O7 Crystals: The Role Of Ag Interstitial Ions, Timothy D. Gustafson, Brant E. Kananen, Nancy C. Giles, Brian C. Holloway, Volodymyr T. Adamiv, Ihor M. Teslyuk, Yaroslav V. Burak, Larry E. Halliburton
Electron Traps In Ag-Doped Li2B4O7 Crystals: The Role Of Ag Interstitial Ions, Timothy D. Gustafson, Brant E. Kananen, Nancy C. Giles, Brian C. Holloway, Volodymyr T. Adamiv, Ihor M. Teslyuk, Yaroslav V. Burak, Larry E. Halliburton
Faculty Publications
Electron paramagnetic resonance (EPR) is used to establish models for electron traps in Ag-doped lithium tetraborate (Li2B4O7) crystals. When exposed at room temperature to ionizing radiation, electrons are trapped at interstitial Ag+ ions and holes are trapped at Ag+ ions on Li+ sites. The trapped electrons occupy a 5s1 orbital on the interstitial Ag ions (some of the unpaired spin density is also on neighboring ions). Three EPR spectra are assigned to electrons trapped at interstitial Ag ions. Their g values are near 1.99 and they have resolved hyperfine structure …
Modeling Defect Mediated Color-Tunability In Leds With Eu-Doped Gan-Based Active Layers, Hayley J. Austin, Brandon Mitchell, Dolf Timmerman, Jun Tatebayashi, Shuhei Ichikawa, Yasufumi Fujiwara, Volkmar Dierolf
Modeling Defect Mediated Color-Tunability In Leds With Eu-Doped Gan-Based Active Layers, Hayley J. Austin, Brandon Mitchell, Dolf Timmerman, Jun Tatebayashi, Shuhei Ichikawa, Yasufumi Fujiwara, Volkmar Dierolf
Physics & Engineering Faculty Publications
Color tunability from red to orange to yellow has been demonstrated in GaN-based LED devices with Eu-doped GaN layers as the active region. Under current injection, this is achieved by varying the current density and the pulse conditions. The underlying mechanism behind this color tunability is a redistribution of energy among the D-5(J) states of a Eu3+ ion. This energy shuffling is facilitated by a local defect that has been neglected in previous modeling work. Including this defect allows for a quantitative prediction of the relative time-averaged populations of the Eu3+ ion's D-5(0) and D-5(1) states. Extracting, from experimental results, …
Novel Magnetic And Optical Properties Of Sn1−XZnXO2 Nanoparticles, Nevil A. Franco, Kongara M. Reddy, Josh Eixenberger, Dmitri A. Tenne, Charles B. Hanna, Alex Punnoose
Novel Magnetic And Optical Properties Of Sn1−XZnXO2 Nanoparticles, Nevil A. Franco, Kongara M. Reddy, Josh Eixenberger, Dmitri A. Tenne, Charles B. Hanna, Alex Punnoose
Physics Faculty Publications and Presentations
In this work, we report on the effects of doping SnO2 nanoparticles with Zn2+ ions. A series of ∼2–3 nm sized Sn1−x ZnxO2 crystallite samples with 0 ≤ x ≤ 0.18 were synthesized using a forced hydrolysis method. Increasing dopant concentration caused systematic changes in the crystallite size, oxidation state of Sn, visible emission, and band gap of SnO2 nanoparticles. X-ray Diffraction studies confirmed the SnO2 phase purity and the absence of any impurity phases. Magnetic measurements at room temperature showed a weak ferromagnetic behavior characterized by an open hysteresis loop. Their …
Band Gap Engineering Via Doping: A Predictive Approach, Antonis N. Andriotis, Madhu Menon
Band Gap Engineering Via Doping: A Predictive Approach, Antonis N. Andriotis, Madhu Menon
Center for Computational Sciences Faculty Publications
We employ an extension of Harrison's theory at the tight binding level of approximation to develop a predictive approach for band gap engineering involving isovalent doping of wide band gap semiconductors. Our results indicate that reasonably accurate predictions can be achieved at qualitative as well as quantitative levels. The predictive results were checked against ab initio ones obtained at the level of DFT/SGGA + U approximation. The minor disagreements between predicted and ab initio results can be attributed to the electronic processes not incorporated in Harrison's theory. These include processes such as the conduction band anticrossing [Shan et al., …
Magnetism Of Zn-Doped Sno2: Role Of Surfaces, Pushpa Raghani, Balaji Ramanujam
Magnetism Of Zn-Doped Sno2: Role Of Surfaces, Pushpa Raghani, Balaji Ramanujam
Physics Faculty Publications and Presentations
Surface effects on the magnetization of Zn-doped SnO2 are investigated using first principles method. Magnetic behavior of Zn-doped bulk and highest and lowest energy surfaces—(001) and (110), respectively, are investigated in presence and absence of other intrinsic defects. The Zn-doped (110) and (001) surfaces of SnO2 show appreciable increase in the magnetic moment (MM) compared to Zn-doped bulk SnO2. Formation energies of Zn defects on both the surfaces are found to be lower than those in bulk SnO2. Zn doping favors the formation of oxygen vacancies. The density of states analysis on the Zn-doped …
Temperature-Dependent Photoluminescence Of Ge/Si And Ge 1-Ysn Y/Si, Indicating Possible Indirect-To-Direct Bandgap Transition At Lower Sn Content, Mee-Yi Ryu, Thomas R. Harris, Yung Kee Yeo, Richard T. Beeler, John Kouvetakis
Temperature-Dependent Photoluminescence Of Ge/Si And Ge 1-Ysn Y/Si, Indicating Possible Indirect-To-Direct Bandgap Transition At Lower Sn Content, Mee-Yi Ryu, Thomas R. Harris, Yung Kee Yeo, Richard T. Beeler, John Kouvetakis
Faculty Publications
Temperature (T)-dependent photoluminescence (PL) has been investigated for both p-Ge and n-Ge1-ySny films grown on Si substrates. For the p-Ge, strong direct bandgap (ED) along with weak indirect bandgap related (EID) PL at low temperatures (LTs) and strong ED PL at room temperature (RT) were observed. In contrast, for the n-Ge1-ySny, very strong dominant EID PL at LT and strong ED PL were observed at RT. This T-dependent PL study indicates that the indirect-to-direct bandgap transitions of Ge1-ySn …
Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal
Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal
Faculty Publications
No abstract provided.
Applications Of High Throughput (Combinatorial) Methodologies To Electronic, Magnetic, Optical, And Energy-Related Materials, Martin L. Green, Ichiro Takeuchi, Jason R. Hattrick-Simpers
Applications Of High Throughput (Combinatorial) Methodologies To Electronic, Magnetic, Optical, And Energy-Related Materials, Martin L. Green, Ichiro Takeuchi, Jason R. Hattrick-Simpers
Faculty Publications
High throughput (combinatorial) materials science methodology is a relatively new research paradigm that offers the promise of rapid and efficient materials screening, optimization, and discovery. The paradigm started in the pharmaceutical industry but was rapidly adopted to accelerate materials research in a wide variety of areas. High throughput experiments are characterized by synthesis of a “library” sample that contains the materials variation of interest (typically composition), and rapid and localized measurement schemes that result in massive data sets. Because the data are collected at the same time on the same “library” sample, they can be highly uniform with respect to …
Measurement Of Semiconductor Surface Potential Using The Scanning Electron Microscope, Jennifer T. Heath, Chun-Sheng Jiang, Mowafak M. Al-Jassim
Measurement Of Semiconductor Surface Potential Using The Scanning Electron Microscope, Jennifer T. Heath, Chun-Sheng Jiang, Mowafak M. Al-Jassim
Faculty Publications
We calibrate the secondary electron signal from a standard scanning electron microscope to voltage, yielding an image of the surface or near-surface potential. Data on both atomically abrupt heterojunction GaInP/GaAs and diffused homojunction Si solar cell devices clearly show the expected variation in potential with position and applied bias, giving depletion widths and locating metallurgical junctions to an accuracy better than 10 nm. In some images, distortion near the p-n junction is observed, seemingly consistent with the effects of lateral electric fields (patch fields). Reducing the tube bias removes this distortion. This approach results in rapid and straightforward collection of …
Scanning Capacitance Spectroscopy On N+-P Asymmetrical Junctions In Multicrystalline Si Solar Cells, Chun-Sheng Jiang, Jennifer T. Heath, Helio R. Moutinho, Mowafak M. Al-Jassim
Scanning Capacitance Spectroscopy On N+-P Asymmetrical Junctions In Multicrystalline Si Solar Cells, Chun-Sheng Jiang, Jennifer T. Heath, Helio R. Moutinho, Mowafak M. Al-Jassim
Faculty Publications
We report on a scanning capacitance spectroscopy (SCS) study on the n+-p junction of multicrystalline silicon solar cells. We found that the spectra taken at space intervals of ∼10 nm exhibit characteristic features that depend strongly on the location relative to the junction. The capacitance-voltage spectra exhibit a local minimum capacitance value at the electrical junction, which allows the junction to be identified with ∼10-nm resolution. The spectra also show complicated transitions from the junction to the n-region with two local capacitance minima on the capacitance-voltage curves; similar spectra to that have not been previously reported in …
3d Transition Metal Doping Of Semiconducting Boron Carbides, Peter A. Dowben, Orhan Kizilkaya, Jing Liu, B. Montag, K. Nelson, Ildar F. Sabiryanov, Jennifer I. Brand
3d Transition Metal Doping Of Semiconducting Boron Carbides, Peter A. Dowben, Orhan Kizilkaya, Jing Liu, B. Montag, K. Nelson, Ildar F. Sabiryanov, Jennifer I. Brand
Peter Dowben Publications
The introduction metallocenes, in particular ferrocene (Fe(η5-C5H5)2), cobaltocene (Co(η5-C5H5)2), and nickelocene (Ni(η5-C5H5)2), together with the carborane source molecule closo-1,2-dicarbadodecaborane, during plasma enhanced chemical vapor deposition, will result in the transition metal doping of semiconducting boron carbides. Here we report using ferrocene to introduce Fe dop¬ants, and a semiconducting boron-carbide homojunction has been fabricated. The diode characteristics are very similar to those fabricated with Co and Ni doping.
Quantitative Analyses Of Dispersion, Doping And Electronic Separation Of Single Wall Hipco Carbon Nanotubes, Priya Baskar Rao
Quantitative Analyses Of Dispersion, Doping And Electronic Separation Of Single Wall Hipco Carbon Nanotubes, Priya Baskar Rao
Doctoral
As prepared SWNTs are obtained in bundles with a mixture of both metallic and semi conducting tubes. For many specific applications, electronically separated single individual tubes are required and in order to reach these application criteria, the tubes should be processed. This thesis reports on a systematic exploration of methods to routinely process, electronically separate and characterise commercially available single walled carbon nanotubes (SWNTs). Commercially available HiPco SWNTs were dispersed in water with the assistance of 1 % by weight sodium dodecyl benzene sulphate (SDBS). The tubes were dispersed in the water surfactant system through the aid of sonication and …
The Decomposition Of Yba₂Cu₃O₇₋Δ Doped Into Ba₂Yruo₆, H. A. Blackstead, William B. Yelon, M. Kornecki, M. P. Smylie, P. J. Mcginn, Jinbo Yang, Qingsheng Cai, William Joseph James
The Decomposition Of Yba₂Cu₃O₇₋Δ Doped Into Ba₂Yruo₆, H. A. Blackstead, William B. Yelon, M. Kornecki, M. P. Smylie, P. J. Mcginn, Jinbo Yang, Qingsheng Cai, William Joseph James
Physics Faculty Research & Creative Works
One of the persistent criticisms of claims for observation of superconductivity in Ba2YRu1−uCuuO6 (O6) is that the diamagnetism is actually due to the decomposition of the material into YBa2Cu3O7−delta and other phases. We report a series of experiments in which YBa2Cu3O7−delta is doped into Ba2YRuO6 and carried through a series of sintering steps which were followed by magnetization, neutron diffraction, and scanning electron microscopy/microprobe measurements. It was found that the dopant YBa2Cu3O7−delta decomposed and failed to reform with cooling. It is concluded that the O6 phase is the stable high-temperature phase. The Cu released from the Y123 decomposition doped the …
Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal
Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal
Faculty Publications
No abstract provided.
Progress Towards Terahertz Acoustic Phonon Generation In Doping Superlattices, Thomas E. Wilson
Progress Towards Terahertz Acoustic Phonon Generation In Doping Superlattices, Thomas E. Wilson
Physics Faculty Research
Progress is described in experiments to generate coherent terahertz acoustic phonons in silicon doping superlattices by the resonant absorption of nanosecond-pulsed far-infrared laser radiation. Future experiments are proposed that would use the superlattice as a transducer in a terahertz cryogenic acoustic reflection microscope with sub-nanometer resolution.
Progress Towards Terahertz Acoustic Phonon Generation In Doping Superlattices, Thomas E. Wilson
Progress Towards Terahertz Acoustic Phonon Generation In Doping Superlattices, Thomas E. Wilson
Physics Faculty Research
Progress is described in experiments to generate coherent terahertz acoustic phonons in silicon doping superlattices by the resonant absorption of nanosecond-pulsed far-infrared laser radiation. Future experiments are proposed that would use the superlattice as a transducer in a terahertz cryogenic acoustic reflection microscope with sub-nanometer resolution.
Supralinear Photoconductivity Of Copper Doped Semi-Insulating Gallium Arsenide, K. H. Schoenbach, R. P. Joshi, F. Peterkin, R. L. Druce
Supralinear Photoconductivity Of Copper Doped Semi-Insulating Gallium Arsenide, K. H. Schoenbach, R. P. Joshi, F. Peterkin, R. L. Druce
Bioelectrics Publications
We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. A threshold intensity level has been observed and can be related to the occupancy of the deep copper level. Numerical simulations have also been carried out to analyze the trapping dynamics. The intensity dependent lifetimes obtained from the simulations match the experimental data very well. Finally, based on the nonlinear intensity dependence of the effective lifetimes, a possible low‐energy phototransistor application for …
Thermal Conductivity Of Thermoelectric Si0.8‐Ge0.2 Alloys, D. P. White, P. G. Clemens
Thermal Conductivity Of Thermoelectric Si0.8‐Ge0.2 Alloys, D. P. White, P. G. Clemens
Physics Faculty Publications
The thermal conductivity of heavily doped, n-type Si-Ge alloys has been studied from 300 to 1200 K. The scattering rate of several phonon scattering mechanisms has been calculated, including intrinsic scattering, mass defect and distortion scattering, phonon-electron scattering, and scattering by inclusions. These rates were then used to calculate the lattice thermal conductivity. The electronic component of the thermal conductivity was calculated from the calculated Lorenz ratio and measured values of the electrical conductivity. The total thermal conductivity was then compared to measured values for a specimen studied by Vining et al.
Review Of Hall Effect And Magnetoresistance Measurements In Gaas Materials And Devices, David C. Look
Review Of Hall Effect And Magnetoresistance Measurements In Gaas Materials And Devices, David C. Look
Physics Faculty Publications
The use of magnetic fields in the electrical characterization of semiconductor materials is familiar to everyone in the form of Hall‐effect measurements. However, there is another magnetic‐field‐based phenomenon, magnetoresistance (MR), which is highly useful but not nearly so familiar to the majority of workers. One of the unique features of MR measurements is their applicability to common device structures, in particular, field‐effect transistors (FETs) and contact‐resistance patterns. We will show how channel mobility information can be extracted from the MR data in metal‐semiconductor FETs (MESFETs) and modulation‐doped heterostructure FETs (MODFETs), and also how the material under ohmic contacts can be …