Physics Commons^™

Electron Tunneling In A Strained N-Type Si1−Xgex/Si/Si1−Xgex Double-Barrier Structure, K. M. Hung, T. H. Cheng, W. P. Huang, K. Y. Wang, H. H. Cheng, Greg Sun, R. A. Soref

Physics Faculty Publications

We report electrical measurements on an n-type Si_1−xGe_x/Si/Si_1−xGe_x double-barrier structure grown on a partially relaxed Si_1−yGe_y buffer layer. Resonance tunneling of Δ₄band electrons is demonstrated. This is attributed to the strain splitting in the SiGe buffer layer where the Δ₄ band is lowest in energy at the electrode. Since the Δ₄ band electrons have a much lighter effective mass along the direction of tunneling current in comparison with that of the Δ₂ band electrons, this work presents an advantage over those …