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- AFM (1)
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Articles 1 - 6 of 6
Full-Text Articles in Physics
Theory Of Spin Loss At Metallic Interfaces, Kirill Belashchenko, Alexey Kovalev, Mark Van Schilfgaarde
Theory Of Spin Loss At Metallic Interfaces, Kirill Belashchenko, Alexey Kovalev, Mark Van Schilfgaarde
Materials Research Science and Engineering Center: Faculty Publications
Interfacial spin-flip scattering plays an important role in magnetoelectronic devices. Spin loss at metallic interfaces is usually quantified by matching the magnetoresistance data for multilayers to the Valet-Fert model, while treating each interface as a fictitious bulk layer whose thickness is δ times the spin-diffusion length. By employing the properly generalized circuit theory and the scattering matrix approaches, we derive the relation of the parameter δ to the spin-flip transmission and reflection probabilities at an individual interface. It is found that δ is proportional to the square root of the probability of spin-flip scattering. We calculate the spin-flip scattering probabilities …
Stability Of Skyrmion Lattices And Symmetries Of Quasi-Two-Dimensional Chiral Magnets, Utkan Güngördü, Rabindra Nepal, Oleg A. Tretiakov, Kirill D. Belashchenko, Alexey Kovalev
Stability Of Skyrmion Lattices And Symmetries Of Quasi-Two-Dimensional Chiral Magnets, Utkan Güngördü, Rabindra Nepal, Oleg A. Tretiakov, Kirill D. Belashchenko, Alexey Kovalev
Materials Research Science and Engineering Center: Faculty Publications
Recently there has been substantial interest in realizations of skyrmions, in particular in quasi-two-dimensional (2D) systems due to increased stability resulting from reduced dimensionality. A stable skyrmion, representing the smallest realizable magnetic texture, could be an ideal element for ultradense magnetic memories. Here we use the most general form of the quasi-2D free energy with Dzyaloshinskii-Moriya interactions constructed from general symmetry considerations reflecting the underlying system. We predict that the skyrmion phase is robust and it is present even when the system lacks the in-plane rotational symmetry. In fact, the lowered symmetry leads to increased stability of vortex-antivortex lattices with …
Nanomechanics Of Flexoelectric Switching, J. Očenášek, Haidong Lu, C. W. Bark, Chang-Beom Eom, J. Alcalá, G. Catalan, Alexei Gruverman
Nanomechanics Of Flexoelectric Switching, J. Očenášek, Haidong Lu, C. W. Bark, Chang-Beom Eom, J. Alcalá, G. Catalan, Alexei Gruverman
Materials Research Science and Engineering Center: Faculty Publications
We examine the phenomenon of flexoelectric switching of polarization in ultrathin films of barium titanate induced by a tip of an atomic force microscope (AFM). The spatial distribution of the tip-induced flexoelectricity is computationally modeled both for perpendicular mechanical load (point measurements) and for sliding load (scanning measurements), and compared with experiments. We find that (i) perpendicular load does not lead to stable ferroelectric switching in contrast to the load applied in the sliding contact load regime, due to nontrivial differences between the strain distributions in both regimes: ferroelectric switching for the perpendicular load mode is impaired by a strain …
Nonlinear Transport In Nanoscale Phase Separated Colossal Magnetoresistive Oxide Thin Films, V. R. Singh, L. Zhang, Anil Rajapitamahuni, N. Devries, Xia Hong
Nonlinear Transport In Nanoscale Phase Separated Colossal Magnetoresistive Oxide Thin Films, V. R. Singh, L. Zhang, Anil Rajapitamahuni, N. Devries, Xia Hong
Materials Research Science and Engineering Center: Faculty Publications
We report a study of the I-V characteristics of 2.5–5.4 nm epitaxial La1xSrxMnO3 (x = 0.33 and 0.5) and La0.7Ca0.3MnO3 thin films. While La0.67Sr0.33MnO3 films exhibit linear conduction over the entire temperature and magnetic field ranges investigated, we observe a strong correlation between the linearity of the I-V relation and the metal-insulator transition in highly phase separated La0.5Sr0.5MnO3 and La0.7Ca0.3MnO3 films. Linear I-V behavior has been observed in the high temperature paramagnetic insulating phase, and …
Suppression Of Octahedral Tilts And Associated Changes In Electronic Properties At Epitaxial Oxide Heterostructure Interfaces, A. Y. Borisevich, H. Y. Chang, Mark Huijben, M. P. Oxley, S. Okamoto, Manish K. Niranjan, John D. Burton, Evgeny Y. Tsymbal, Y. H. Chu, P. Yu, R. Ramesh, Sergei V. Kalinin, S. J. Pennycook
Suppression Of Octahedral Tilts And Associated Changes In Electronic Properties At Epitaxial Oxide Heterostructure Interfaces, A. Y. Borisevich, H. Y. Chang, Mark Huijben, M. P. Oxley, S. Okamoto, Manish K. Niranjan, John D. Burton, Evgeny Y. Tsymbal, Y. H. Chu, P. Yu, R. Ramesh, Sergei V. Kalinin, S. J. Pennycook
Materials Research Science and Engineering Center: Faculty Publications
Epitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell mapping of lattice parameters and oxygen octahedral rotations across the BiFeO3 -La0:7 Sr0:3MnO3 interface to elucidate how the change of crystal symmetry is accommodated. Combined with low-loss electron energy loss spectroscopy imaging, we demonstrate a mesoscopic antiferrodistortive phase transition near the interface in BiFeO3 and elucidate associated changes in electronic properties in a thin layer directly adjacent to the interface.
Effect Of Tip Resonances On Tunnelling Anisotropic Magnetoresistance In Ferromagnetic Break Junctions: A First-Principles Study, John D. Burton, Renat F. Sabirianov, Julian P. Velev, O. N. Mryasov, Evgeny Y. Tsymbal
Effect Of Tip Resonances On Tunnelling Anisotropic Magnetoresistance In Ferromagnetic Break Junctions: A First-Principles Study, John D. Burton, Renat F. Sabirianov, Julian P. Velev, O. N. Mryasov, Evgeny Y. Tsymbal
Materials Research Science and Engineering Center: Faculty Publications
First-principles calculations of electron tunneling transport in nanoscale Ni and Co break-junctions reveal strong dependence of the conductance on the magnetization direction, an effect known as tunneling anisotropic magnetoresistance TAMR. An important aspect of this phenomenon stems from resonant states localized in the electrodes near the junction break. The energy and broadening of these states is strongly affected by the magnetization orientation due to spin-orbit coupling, causing TAMR to be sensitive to bias voltage on a scale of a few millivolts. Our results bear a resemblance to recent experimental data and suggest that TAMR driven by resonant states is a …