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- Bi-directional conductance control (1)
- Condensed matter electronic structure (1)
- Electroluminescence emission (1)
- Hopping transport (1)
- Learning rules (1)
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- Light sensitive memristor (1)
- Optical control (1)
- Photocurrent-voltage relation (1)
- Photodetectors (1)
- Polarity (1)
- Quantum dot memristor (1)
- Resonant tunneling diode (1)
- Resonant tunneling diodes (1)
- Scattering (1)
- Temperature tuning (1)
- Voltage pulses (1)
- Wavelength-dependent conductance control (1)
Articles 1 - 5 of 5
Full-Text Articles in Physics
Temperature Tuning From Direct To Inverted Bistable Electroluminescence In Resonant Tunneling Diodes, F. Hartmann, A. Pfenning, Mariama Rebello Sousa Dias, F. Langer, S. Höfling, M. Kamp, L. Worschech, L. K. Castelano, G. E. Marques, V. Lopez-Richard
Temperature Tuning From Direct To Inverted Bistable Electroluminescence In Resonant Tunneling Diodes, F. Hartmann, A. Pfenning, Mariama Rebello Sousa Dias, F. Langer, S. Höfling, M. Kamp, L. Worschech, L. K. Castelano, G. E. Marques, V. Lopez-Richard
Physics Faculty Publications
We study the electroluminescence (EL) emission of purely n-doped resonant tunneling diodes in a wide temperature range. The paper demonstrates that the EL originates from impact ionization and radiative recombination in the extended collector region of the tunneling device. Bistable currentvoltage response and EL are detected and their respective high and low states are tuned under varying temperature. The bistability of the EL intensity can be switched from direct to inverted with respect to the tunneling current and the optical on/off ratio can be enhanced with increasing temperature. One order of magnitude amplification of the optical on/off ratio can be …
Mimicking Of Pulse Shape-Dependent Learning Rules With A Quantum Dot Memristor, P. Maier, F. Hartmann, Mariama Rebello Sousa Dias, M. Emmerling, C. Schneider, L. K. Castelano, M. Kamp, G. E. Marques, V. Lopez-Richard, S. Höfling
Mimicking Of Pulse Shape-Dependent Learning Rules With A Quantum Dot Memristor, P. Maier, F. Hartmann, Mariama Rebello Sousa Dias, M. Emmerling, C. Schneider, L. K. Castelano, M. Kamp, G. E. Marques, V. Lopez-Richard, S. Höfling
Physics Faculty Publications
We present the realization of four different learning rules with a quantum dot memristor by tuning the shape, the magnitude, the polarity and the timing of voltage pulses. The memristor displays a large maximum to minimum conductance ratio of about 57 000 at zero bias voltage. The high and low conductances correspond to different amounts of electrons localized in quantum dots, which can be successively raised or lowered by the timing and shapes of incoming voltage pulses. Modifications of the pulse shapes allow altering the conductance change in dependence on the time difference. Hence, we are able to mimic different …
Light Sensitive Memristor With Bi-Directional And Wavelength-Dependent Conductance Control, P. Maier, F. Hartmann, Mariama Rebello Sousa Dias, M. Emmerling, C. Schneider, L. K. Castelano, M. Kamp, G. E. Marques, V. Lopez-Richard, L. Worschech, S. Höfling
Light Sensitive Memristor With Bi-Directional And Wavelength-Dependent Conductance Control, P. Maier, F. Hartmann, Mariama Rebello Sousa Dias, M. Emmerling, C. Schneider, L. K. Castelano, M. Kamp, G. E. Marques, V. Lopez-Richard, L. Worschech, S. Höfling
Physics Faculty Publications
We report the optical control of localized charge on positioned quantum dots in an electro-photosensitive memristor. Interband absorption processes in the quantum dot barrier matrix lead to photogenerated electron-hole-pairs that, depending on the applied bias voltage, charge or discharge the quantum dots and hence decrease or increase the conductance. Wavelength-dependent conductance control is observed by illumination with red and infrared light, which leads to charging via interband and discharging via intraband absorption. The presented memristor enables optical conductance control and may thus be considered for sensory applications in artificial neural networks as light-sensitive synapses or optically tunable memories.
Photocurrent-Voltage Relation Of Resonant Tunneling Diode Photodetectors, Andreas Pfenning, Favbian Hartmann, Mariama Rebello Sousa Dias, Fabian Langer, Martin Kamp, Leonardo Kleber Castelano, Victor Lopez-Richard, Gilmar Eugenio Marques, Sven Höfling, Lukas Worschech
Photocurrent-Voltage Relation Of Resonant Tunneling Diode Photodetectors, Andreas Pfenning, Favbian Hartmann, Mariama Rebello Sousa Dias, Fabian Langer, Martin Kamp, Leonardo Kleber Castelano, Victor Lopez-Richard, Gilmar Eugenio Marques, Sven Höfling, Lukas Worschech
Physics Faculty Publications
We have investigated photodetectors based on an AlGaAs/GaAs double barrier structure with a nearby lattice-matched GaInNAs absorption layer. Photons with the telecommunication wavelength λ = 1.3 µm lead to hole accumulation close to the double barrier inducing a voltage shift ΔV(V) of the current-voltage curve, which depends strongly on the bias voltage V. A model is proposed describing ΔV(V) and the photocurrent response in excellent agreement with the experimental observations. According to the model, an interplay of the resonant tunneling diode (RTD) quantum efficiency ƞ(V), the lifetime of photogenerated …
Electron Transport In Quantum Dot Chains: Dimensionality Effects And Hopping Conductance, V. P. Kunets, Mariama Rebello Sousa Dias, T. Rembert, M. E. Ware, Y. I. Mazur, V. Lopez-Richard, H. A. Mantooth, G. E. Marques, G. J. Salamo
Electron Transport In Quantum Dot Chains: Dimensionality Effects And Hopping Conductance, V. P. Kunets, Mariama Rebello Sousa Dias, T. Rembert, M. E. Ware, Y. I. Mazur, V. Lopez-Richard, H. A. Mantooth, G. E. Marques, G. J. Salamo
Physics Faculty Publications
Detailed experimental and theoretical studies of lateral electron transport in a system of quantum dot chains demonstrate the complicated character of the conductance within the chain structure due to the interaction of conduction channels with different dimensionalities. The one-dimensional character of states in the wetting layer results in an anisotropic mobility, while the presence of the zero-dimensional states of the quantum dots leads to enhanced hopping conductance, which affects the low-temperature mobility and demonstrates an anisotropy in the conductance. These phenomena were probed by considering a one-dimensional model of hopping along with band filling effects. Differences between the model and …