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Full-Text Articles in Physics
Electrical Characterization Of Gasb Based Semiconductors For 2-4 Micrometers Diode Laser Applications, Daniel K. Johnstone
Electrical Characterization Of Gasb Based Semiconductors For 2-4 Micrometers Diode Laser Applications, Daniel K. Johnstone
Theses and Dissertations
Deep Level Transient Spectroscopy (DLTS) was used to characterize the band offsets and deep levels in MBE grown GaSb-based semiconductors that are used in 2-4 µm laser diode structures. One of several deep level traps found in AlxGa1-xAsySb1-y (x=0, 0.5, 0.6, 1.0) is a GaSb double acceptor trap. Progress is also made in establishing the model for the DX center in this material. The degree of compensation of the donor related DX center by GaSb affect where donors are situated, giving preference to one configuration over the many other possible configurations. One minority …
Photoluminescence And Electroluminescence Of Erbium And Neodymium Implanted Semiconductors, James R. Hunter
Photoluminescence And Electroluminescence Of Erbium And Neodymium Implanted Semiconductors, James R. Hunter
Theses and Dissertations
Low temperature photoluminescence (PL) and electroluminescence (EL) measurements were used to study the excitation of erbium- and neodymium-implanted GaAs and AlxGa1-xAs (x=0. 1, 0.3) pn-junctions. The rare-earth (RE) emissions were investigated as a function of ion dose, aluminum mole fraction, laser excitation power, and applied forward bias voltage for the implanted samples. Low temperature PL was also measured from Er doped silicon grown by the metalorganic chemical vapor-phase deposition (MOCVD) method using various growth parameters.. The MOCVD-grown Si samples were studied as a function of metalorganic source temperature, silane (SiH4) flow, growth time, and …
Experimental Investigation And Computer Modeling Of Optical Switching In Distributed Bragg Reflector And Vertical Cavity Surface Emitting Laser Structures, Richard J. Bagnell
Experimental Investigation And Computer Modeling Of Optical Switching In Distributed Bragg Reflector And Vertical Cavity Surface Emitting Laser Structures, Richard J. Bagnell
Theses and Dissertations
The optical switching capabilities of Distributed Bragg Reflector (DBR) structures, including Vertical Cavity Surface Emitting Lasers (VCSELs) are examined. Reflectivity switching is demonstrated using both thermal and carrier generated effects to alter the DBR/VCSEL layers' refractive indices. Optical bistability is demonstrated at room temperature, under CW photopumped excitation. The optical bistability hysteresis is controllable by spectral location of the pump on the stop band edge. In the VCSEL, reflective bistability is also evidenced; additionally, this bistability is accompanied by a bistability in the VCSEL lasing output intensity, spot size, and wavelength. Modeling of the DBR/VCSEL thermally induced bistability was accomplished …
Characterization Of Nonlinear Effects In Optically Pumped Vertical Cavity Surface Emitting Lasers, Scott L. Brown
Characterization Of Nonlinear Effects In Optically Pumped Vertical Cavity Surface Emitting Lasers, Scott L. Brown
Theses and Dissertations
The nonlinear characteristics of optically pumped Vertical Cavity Surface Emitting Lasers VCSELs are identified, isolated, and quantified. Three different VCSELs are evaluated including two with gain regions of bulk GaAs operating at 875nm and one multi-quantum well MQW InGaAs VCSEL operating at 950nm. The nonlinearities evaluated include those due to cavity temperature, carrier injection, and internal lasing field. The VCSELs are pumped by a picosecondfemtosecond TiSapphire laser which is configured to operate in CW, gated CW minimum gate width was 200ns, picosecond, and gated picosecond modes. A linear relationship is shown between wavelength and substrate temperature, cavity temperature, and injected …
The Effects Of Optical Feedback On Polarization Of Vertical Cavity Surface Emitting Lasers, Gregory J. Vansuch
The Effects Of Optical Feedback On Polarization Of Vertical Cavity Surface Emitting Lasers, Gregory J. Vansuch
Theses and Dissertations
Vertical Cavity Surface Emitting Lasers VCSELs are a type of semiconductor laser with a cavity oriented orthogonally to the planes of material growth. These lasers differ from conventional edge emitting lasers in several important ways. They have symmetric output beams and they are easily built into two dimensional arrays, making them very attractive as photonic components. The characteristic of interest in this thesis is polarization. While the asymmetric cavities of edge emitters exhibit a clear preference for light polarized in a particular direction, the cylindrically symmetric cavity of a VCSEL has no clear preference. Therefore, it should be relatively easy …