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Comparative Photovoltaics Of P3ht:N2200 And P3ht: Small-Gap Fullerene Ethyl-Nipecotate Bulk Heterojunction Structures, Md. Nasir Uddin, Rafiqul Islam, Muhibur Rahman, Nazia Chawdhury
Comparative Photovoltaics Of P3ht:N2200 And P3ht: Small-Gap Fullerene Ethyl-Nipecotate Bulk Heterojunction Structures, Md. Nasir Uddin, Rafiqul Islam, Muhibur Rahman, Nazia Chawdhury
Makara Journal of Science
This work deals with the study on the optical absorption and photoluminescence spectra of a p-type organic semiconducting polymer, regioregular poly 3-hexylthiophene-2,5-diyl (P3HT) and the absorption spectra of an n-type fullerene-based small-gap fullerene-ethyl nipecotate (Fullerene-EN) and a non-fullerene-based polynaphthalene bithiophene (N2200) semiconducting materials. The band gap of P3HT, N2200, and small-gap fullerene-ethyl nipecotate are 2.42, 1.65, and 1.51 eV, respectively, calculated from experimental results through the Tauc equation. Active layers with blends of P3HT and small-gap fullerene-ethyl nipecotate and P3HT and N2200 have been used to fabricate bulk heterojunction (BHJ) structures. The P3HT:N2200 BHJ structure follows the current density versus …